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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Antiferromagentic resonance detected by direct current voltages in MnF{sub 2}/Pt bilayers

We performed coplanar waveguide-based broadband ferromagnetic resonance experiments on the antiferromagnetic insulator MnF{sub 2}, while simultaneously recording the DC voltage arising in a thin platinum film deposited onto the MnF{sub 2}. The antiferromagnetic resonance is clearly reflected in both the transmission through the waveguide as well as the DC voltage in the Pt strip. The DC voltage remains largely unaffected by field reversal and thus presumably stems from microwave rectification and/or heating effects. However, we identify a small magnetic field orientation dependent contribution, compatible with antiferromagnetic spin pumping theory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Demonstration of Johnson noise thermometry with all-superconducting quantum voltage noise source

We present a Johnson noise thermometry (JNT) system based on an integrated quantum voltage noise source (IQVNS) that has been fully implemented using superconducting circuit technology. To enable precise measurement of Boltzmann's constant, an IQVNS chip was designed to produce intrinsically calculable pseudo-white noise to calibrate the JNT system. On-chip real-time generation of pseudo-random codes via simple circuits produced pseudo-voltage noise with a harmonic tone interval of less than 1 Hz, which was one order of magnitude finer than the harmonic tone interval of conventional quantum voltage noise sources. We estimated a value for Boltzmann's constant experimentally by performing JNT measurements at the temperature of the triple point of water using the IQVNS chip.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Memcapacitive characteristics in reactive-metal (Mo, Al)/HfO{sub X}/n-Si structures through migration of oxygen by applied voltage

Memcapacitive characteristics were investigated in metal-oxide-semiconductor (MOS) structure of reactive electrode (Mo, Al) and hafnium oxide (HfO{sub X}) on n-type Si substrate. The capacitance-voltage curves exhibited sequentially changing capacitance with memory function as repeating voltage sweeps, featured the memcapacitive behaviors. The saturation capacitance was decreased by repeating +V sweeps, while barely changed by −V sweeps. Also, the capacitance-time curves disclosed the same tendency. However, the MOS structure with inert Pt electrode did not show the capacitance change. The memcapacitive behaviors were induced by the migration of oxygen ions from HfO{sub X} to reactive electrodes by applied voltage, which altered the permittivity of HfO{sub X}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Development of a compact generator for gigawatt, nanosecond high-voltage pulses

A compact generator producing 2.2-ns 1.5 GW high-voltage pulses was developed. The generator employed a 27.6 Ω, 0.9 ns pulse-forming-line (PFL), which was charged by an iron core transformer with a turn ratio of 2:33.5 and a coefficient of 0.94. A 1.2 μF, 20 kV capacitor and a hydrogen thyratron were used in the primary circuit. When the thyratron closed at 14.5 kV, 3.4% of the energy stored in the capacitor was delivered to the PFL in 850 ns, producing a peak voltage of up to ∼500 kV. In addition, the principle of triple resonance transformation was employed by adding a 50 pF tuning capacitor and a 1.15 mH inductor between the transformer and the PFL, which led to a significant reduction of the duration and peak value of the transformer voltage without reducing that in the PFL. Meanwhile, an adjustable self-break oil switch was applied. By using transmission lines with impedance overmatched to that of the PFL, the generator delivered a 512 kV pulse across an electron beam diode, generating radiation with a dose of 20 mR/pulse at 20 cm ahead of the diode. The generator provides an excellent ultra-short radiation pulse source for the studies on radiation physics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

High voltage surface potential measurements in ambient conditions: Application to organic thin-film transistor injection and transport characterization

A scanning surface potential measurement technique suited for thin-film devices operating under high voltages is reported. A commercial atomic force microscope has been customized to enable a feedback-controlled and secure surface potential measurement based on phase-shift detection under ambient conditions. Measurements of the local potential profile along the channel of bottom-gate organic thin-film transistors (TFTs) are shown to be useful to disentangle the contributions from the channel and contacts to the device performance. Intrinsic contact current-voltage characteristics have been measured on bottom-gate, top-contact (staggered) TFTs based on the small-molecule semiconductor dinaphtho[2,3-b:2′,3-f]thieno[3,2-b]thiophene (DNTT) and on bottom-gate, bottom-contact (coplanar) TFTs based on the semiconducting polymer polytriarylamine (PTAA). Injection has been found to be linear in the staggered DNTT TFTs and nonlinear in the coplanar PTAA TFTs. In both types of TFT, the injection efficiency has been found to improve with increasing gate bias in the accumulation regime. Contact resistances as low as 130 Ω cm have been measured in the DNTT TFTs. A method that eliminates the influence of bias-stress-induced threshold-voltage shifts when measuring the local charge-carrier mobility in the channel is also introduced, and intrinsic channel mobilities of 1.5 cm{sup 2} V{sup −1} s{sup −1} and 1.1 × 10{sup −3} cm{sup 2} V{sup −1} s{sup −1} have been determined for DNTT and PTAA. In both semiconductors, the mobility has been found to be constant with respect to the gate bias. Despite its simplicity, the Kelvin probe force microscopy method reported here provides robust and accurate surface potential measurements on thin-film devices under operation and thus paves the way towards more extensive studies of particular interest in emerging fields of solid-state electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High voltage threshold for stable operation in a dc electron gun

We report clear observation of a high voltage (HV) threshold for stable operation in a dc electron gun. The HV hold-off time without any discharge is longer than many hours for operation below the threshold, while it is roughly 10 min above the threshold. The HV threshold corresponds to the minimum voltage where discharge ceases. The threshold increases with the number of discharges during HV conditioning of the gun. Above the threshold, the amount of gas desorption per discharge increases linearly with the voltage difference from the threshold. The present experimental observations can be explained by an avalanche discharge model based on the interplay between electron stimulated desorption (ESD) from the anode surface and subsequent secondary electron emission from the cathode by the impact of ionic components of the ESD molecules or atoms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Voltage control of cavity magnon polariton

We have experimentally investigated the microwave transmission of the cavity-magnon-polariton (CMP) generated by integrating a low damping magnetic insulator onto a 2D microwave cavity. The high tunability of our planar cavity allows the cavity resonance frequency to be precisely controlled using a DC voltage. By appropriately tuning the voltage and magnetic bias, we can observe the cavity photon magnon coupling and the magnetic coupling between a magnetostatic mode and the generated CMP. The dispersion of the generated CMP was measured by either tuning the magnetic field or the applied voltage. This electrical control of CMP may open up avenues for designing advanced on-chip microwave devices that utilize light-matter interaction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Reproducible and controllable induction voltage adder for scaled beam experiments

A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~10 4 –10 6 cm –2 ) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at E c -2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be N t = 3 × 10 12 , 2 × 10 15 , and 5 × 10 14 cm –3 , respectively. The E c -2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large V BD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2019

Nonvolatile voltage controlled molecular spin state switching

Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C 5 H 2 O 5 ), appears to lock the spin crossover [Fe{H 2 B(pz) 2 } 2 (bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. Here, the result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

A metasurface optical modulator using voltage-controlled population of quantum well states

We present that the ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ~6 pA at a maximum operating bias of +1 V and therefore very low power dissipation. Finally, our approach provides a new direction for designing voltage-tunable metasurface-based optical modulators.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Low voltage drop tunnel junctions grown monolithically by MOCVD

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Here, two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm 2 . The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.

42 ENGINEERING↗
DOE OSTI2022

Characterization of self-magnetic pinch radiographic diode performance on RITS-6 at Sandia National Laboratories. II. Coupling between the inductive voltage adder and the SMP load

The self-magnetic pinch (SMP) diode is a type of radiographic diode used to generate an intense electron beam for radiographic applications. At Sandia National Laboratories, SMP was the diode load for the six-cavity radiographic integrated test stand inductive voltage adder (IVA) driver operated in a magnetically insulated transmission line (MITL). The MITL contributes a flow current in addition to the current generated within the diode itself. Extensive experiments with a MITL of 40Ω load impedance [T. J. Renk et al., Phys. Plasmas 29, 023105 (2022)] indicate that the additional flow current leads to results similar to what might be expected from a conventional high-voltage interface driver, where flow current is not present. However, when the MITL flow impedance was increased to 80 Ω, qualitatively different diode behavior was observed. This includes large retrapping waves suggestive of an initial coupling to low impedance as well as diode current decreasing with time even as the total current does not. A key observation is that the driver generates total current (flow + diode) consistent with the flow impedance of the MITL used. The case is made in this paper that the 80Ω MITL experiments detailed here can only be understood when the IVA-MITL-SMP diode is considered as a total system. Additionally, the constraint of fixed total current plus the relatively high flow impedance limits the ability of the diode (whether SMP or other type) to act as an independent load. An unexpected new result is that in tracking the behavior of the electron strike angle on the converter as a function of time, we observed that the conventional cIV x “Radiographic” radiation scaling (where x~2.2) begins to break down for voltages above 8 MV, and cubic scaling is required to recover accurate angle tracking.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop

We demonstrate p-down green emitting LEDs with low turn-on voltage enabled by efficient tunnel junctions. Due to the polarization field alignment in the (In,Ga)N/GaN interface with the p-down orientation, the electrostatic depletion barrier for electron and hole injection is reduced when compared with the conventional p-up LEDs. A single (In,Ga)N/GaN heterostructure quantum well active region with a GaN homojunction tunnel junction exhibited very low forward operating voltage of 2.42 V at 20 A/cm 2 with a peak electroluminescence emission wavelength of 520 nm for current densities above 100 A/cm 2 . Furthermore, the bottom tunnel junction with minimal voltage drop enabled excellent hole injection into the bottom p-GaN layer.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Lattice engineering of high-entropy olivine-type lithium metal phosphate as high-voltage cathodes

Engineering of high-entropy cathode materials for lithium-ion batteries has been actively pursued owing to the outstanding conductivity of high-entropy materials benefited from the maximum entropy and unique antisite disordering structure. Olivine lithium metal phosphates such as LiMnPO 4 and LiNiPO 4 feature high working voltages but low capacities due to their insulation nature. Here in this work, the synthesis of the high-entropy lithium metal phosphate materials (HELMPs) is realized by combining mechanochemistry with a calcination method. By regulating lattice of HELMPs, the high-entropy Li(Mn 0.35 Fe 0.35 Co0.1Mg 0.1 Ca 0.1 )PO 4 reveals three typical high-voltage plateaus in charge–discharge curves corresponding to the redox of Fe, Mn, and Co in the voltage range of 2.0–4.9 V vs Li + /Li, and a much higher initial capacity than LiMnPO 4 (104 vs 15 mAh g -1 ).

25 ENERGY STORAGE↗
DOE OSTI2021

Voltage and cathode emission mechanisms of a magnetized, constricted, orbiting plasma in helium 6.7–850 Pa

Abstract We present a semiquantitative description of several important properties of a magnetized cold-cathode plasma in helium over a wide pressure range 6.7–850 Pa. We focus on the ‘constricted orbiting’ mode where the plasma attaches to the cathode as a moving ‘dot’ and the voltage and rate of cathode erosion are both unusually low. We propose that the low plasma voltage and observed motion of the plasma adjacent to the cathode can be attributed to field emission as the source of electrons from the cathode, a process that is aided by the charging of an oxide film by ions. We find that the observed dependence of plasma voltage on pressure is consistent with the assumption that the axial electric field must increase in regions of strong crossed magnetic field to maintain current continuity.

Physics↗
DOE OSTI2019

Direct comparison of high voltage breakdown measurements in liquid argon and liquid xenon

As noble liquid time projection chambers grow in size their high voltage requirements increase, and detailed, reproducible studies of dielectric breakdown and the onset of electroluminescence are needed to inform their design. The Xenon Breakdown Apparatus (XeBrA) is a 5-liter cryogenic chamber built to characterize the DC high voltage breakdown behavior of liquid xenon and liquid argon. Electrodes with areas up to 33 cm 2 were tested while varying the cathode-anode separation from 1 to 6 mm with a voltage difference up to 75 kV. A power-law relationship between breakdown field and electrode area was observed. Finally, the breakdown behavior of liquid argon and liquid xenon within the same experimental apparatus was comparable.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Finite-time correlations boost large voltage angle fluctuations in electric power grids

Abstract Decarbonization in the energy sector has been accompanied by an increased penetration of new renewable energy sources in electric power systems. Such sources differ from traditional productions in that, first, they induce larger, undispatchable fluctuations in power generation and second, they lack inertia. Recent measurements have indeed reported long, non-Gaussian tails in the distribution of local voltage frequency data. Large frequency deviations may induce grid instabilities, leading in worst-case scenarios to cascading failures and large-scale blackouts. In this article, we investigate how correlated noise disturbances, characterized by the cumulants of their distribution, propagate through meshed, high-voltage power grids. For a single source of fluctuations, we show that long noise correlation times boost non-Gaussian voltage angle fluctuations so that they propagate similarly to Gaussian fluctuations over the entire network. However, they vanish faster, over short distances if the noise fluctuates rapidly. We furthermore demonstrate that a Berry–Esseen theorem leads to the vanishing of non-Gaussianities as the number of uncorrelated noise sources increases. Our predictions are corroborated by numerical simulations on realistic models of power grids.

24 POWER TRANSMISSION AND DISTRIBUTION↗