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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation

Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit — ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of ~ 120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Low Resistance Contact to P-Type Monolayer WSe 2

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. Here, in this study, we develop a charge-transfer doping strategy with WSe 2 /α-RuCl 3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 10 13 cm -2 can be achieved in the WSe 2 /α-RuCl 3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe 2 transistors with an on-current of 35 μA·μm -1 and an I ON /I OFF ratio exceeding 10 9 at room temperature.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Influence of voids on the strength of wrought materials

Three-dimensional voids, which are present in most materials, may be satisfactorily modelled by two-dimensional holes (i.e., cylindrical voids) in sheet metal. In this study, the influence of certain orientations and shapes of voids upon the mechanical properties and fracture behavior of certain ductile materials has been studied. The presence of voids is found to exert a negligible influence on the ultimate tensile strength, owing to plastic flow neutralizing the stress intensification present before yielding occurs. The shape and orientation of the defects, however, are seen to play an important role relative to strain at fracture. The maximum intensified tensile stress criterion which holds for brittle materials is found to apply to ductile materials as well.

Shaw, M. C.↗
DOE OSTI2023

Reaction Chemistry at Discrete Organometallic Fragments on Black Phosphorus

Abstract Black phosphorus (bP) is a two‐dimensional van der Waals material unique in its potential to serve as a support for single‐site catalysts due to its similarity to molecular phosphines, ligands quintessential in homogeneous catalysis. However, there is a scarcity of synthetic methods to install single metal centers on the bP lattice. Here, we demonstrate the functionalization of bP nanosheets with molecular Re and Mo complexes. A suite of characterization techniques, including infrared, X‐ray photoelectron and X‐ray absorption spectroscopy as well as scanning transmission electron microscopy corroborate that the functionalized nanosheets contain a high density of discrete metal centers directly bound to the bP surface. Moreover, the supported metal centers are chemically accessible and can undergo ligand exchange transformations without detaching from the surface. The steric and electronic properties of bP as a ligand are estimated with respect to molecular phosphines. Sterically, bP resembles tri(tolyl)phosphine when monodentate to a metal center, and bis(diphenylphosphino)propane when bidentate, whereas electronically bP is a σ‐donor as strong as a trialkyl phosphine. This work is foundational in elucidating the nature of black phosphorus as a ligand and underscores the viability of using bP as a basis for single‐site catalysts.

Mitra, Kendahl L. Walz↗
DOE OSTI2023

Reaction Chemistry at Discrete Organometallic Fragments on Black Phosphorus

Abstract Black phosphorus (bP) is a two‐dimensional van der Waals material unique in its potential to serve as a support for single‐site catalysts due to its similarity to molecular phosphines, ligands quintessential in homogeneous catalysis. However, there is a scarcity of synthetic methods to install single metal centers on the bP lattice. Here, we demonstrate the functionalization of bP nanosheets with molecular Re and Mo complexes. A suite of characterization techniques, including infrared, X‐ray photoelectron and X‐ray absorption spectroscopy as well as scanning transmission electron microscopy corroborate that the functionalized nanosheets contain a high density of discrete metal centers directly bound to the bP surface. Moreover, the supported metal centers are chemically accessible and can undergo ligand exchange transformations without detaching from the surface. The steric and electronic properties of bP as a ligand are estimated with respect to molecular phosphines. Sterically, bP resembles tri(tolyl)phosphine when monodentate to a metal center, and bis(diphenylphosphino)propane when bidentate, whereas electronically bP is a σ‐donor as strong as a trialkyl phosphine. This work is foundational in elucidating the nature of black phosphorus as a ligand and underscores the viability of using bP as a basis for single‐site catalysts.

Chemistry↗
DOE OSTI2023

Photo-induced halide redistribution in 2D halide perovskite lateral heterostructures

An improved understanding of the degradation pathways under external stimuli is needed to address stability challenges in two-dimensional (2D) perovskite semiconductor materials. Here, in this study, in situ synchrotron nanoprobe X-ray fluorescence (nano-XRF) is used to investigate the evolution of halide redistribution within various 2D halide perovskite (n = 1–3) lateral heterostructures under ultraviolet (UV) exposure. Further, the results show that iodine (I) experiences a loss in all cases, with the rate of change following the perovskite dimensionality monotonically. In contrast, bromine (Br) is relatively more stable than I in n = 2 and 3 heterostructures, with no significant change in the total Br concentration but a visible amount of Br diffusion to the previously I-rich regime. Combining nano-XRF and X-ray absorption spectroscopy (XAS), we found a reduction of dimensionality in crystals with n > 1 after UV exposure, indicating significant structural reconfiguration beyond ion migration.

2D halide perovskites↗
DOE OSTI2020

Family of Robust and Strongly Luminescent CuI-Based Hybrid Networks Made of Ionic and Dative Bonds

The CuI-derived inorganic–organic hybrid compounds are considered as promising phosphors for the lighting industry. Herein, exploiting N-monoalkylated hexaminium salts, [R-HMTA]X (R = Me, Et, Pr, and propargyl; X = Cl and I), as multibridging ligands, we have designed and synthesized a unique class of one-dimensional and two-dimensional hybrid CuI-materials. The reactions of these salts with CuI give rise to All-in-One (AIO) type compounds combining ionic and dative bonds between inorganic and organic components. The latter is formed by structurally unique inorganic [Cu x I y ] (y–x)– clusters, chains, or sheets interconnected through [R-HMTA] + cations via multiple Cu–N bonds. The so-designed compounds at ambient temperature exhibit tunable luminescence spanning from deep blue to red color (λ em = 430–625 nm) with microsecond lifetimes and the quantum efficiency of up to 78%. Remarkably, the AIO materials feature nontrivial excitation- (ED) and temperature-dependent (TD) luminescence, allowing their emission color to be finely adjusted from deep blue to red through changing the excitation wavelength and/or temperature. Based on the TD emission spectroscopy and theoretical calculations, a possible mechanism of the luminescence has been proposed. In conclusion, the very interesting luminescence characteristics coupled with good thermal and photostability render these AIO hybrid materials possible candidates for applications in energy-efficient lighting devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Short-Range Order in VI 3

We present a detailed investigation of the crystal structure of VI 3 , a two-dimensional van der Waals material of interest for studies of low-dimensional magnetism. As opposed to the average crystal structure that features $R\bar{3}$ symmetry of the unit cell, our Raman scattering and X-ray atomic pair distribution function analysis supported by density functional theory calculations point to the coexistence of short-range ordered $P\bar{3}$1c and long-range ordered $R\bar{3}$phases. The highest-intensity peak, A 1g 3 , exhibits a moderate asymmetry that might be traced back to the spin–phonon interactions, as in the case of CrI 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (ε r ~ 22) amorphous native oxide Bi 2 SeO x on the 2D semiconducting Bi2O2Se using O 2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi 2 O 2 Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi 2 O 2 Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Complete Strain Mapping of Nanosheets of Tantalum Disulfide

Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structuresthat result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 µm on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a ~100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized ‘bubbles’ that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, and will allow rapid and non-intrusive strain mapping of thin film samples and electronic devices based on quasi 2D materials.

nano X-ray diffraction↗
DOE OSTI2024

Functionalization of Monolayer MoS 2 with Layered Multimolecular Architectures

Two dimensional van der Waals materials have attracted attention due to their unique properties that arise in the monolayer versus bulk limits. Monolayer MoS 2 has been at the forefront of 2D materials due to its broad applicability in catalysis, photovoltaics, and spintronics. To realize the capabilities of MoS 2 enabled technology, it is necessary to engineer interfaces where charge carriers can be funneled toward or away from the surface. Molecular systems are a versatile strategy to enable this. Ion-linked molecular architectures have been used previously to circumvent difficult and taxing synthetic methods. Here, we demonstrate the growth of metal ion-linked bilayers (ILBs) on monolayer MoS 2 consisting of a first layer spacer (4-mercaptobenzoic acid, MBA) with a Zn(II) ion linked to a fluorophore (BODIPY). Using a combination of Atomic Force Microscopy and Raman spectroscopy, we resolved intrinsic S-vacancies in the MoS 2 lattice via S–H bond breaking of MBA. X-ray Photoelectron Spectroscopy confirmed that Zn(II) acetate can coordinate to carboxylate groups on MBA. Furthermore, with photoluminescence microscopy, we determined that BODIPY emission is observable only in the presence of a metal ion, confirming the growth of a multimolecular ion-linked supramolecular assembly on MoS 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Engineering Thermal Transport across Layered Graphene–MoS 2 Superlattices

Layering two-dimensional van der Waals materials provides a high degree of control over atomic placement, which could enable tailoring of vibrational spectra and heat flow at the sub-nanometer scale. In this work, using spatially resolved ultrafast thermoreflectance and spectroscopy, we uncover the design rules governing cross-plane heat transport in superlattices assembled from monolayers of graphene (G) and MoS 2 (M). Using a combinatorial experimental approach, we probe nine different stacking sequences, G, GG, MG, GGG, GMG, GGMG, GMGG, GMMG, and GMGMG, and identify the effects of vibrational mismatch, interlayer adhesion, and junction asymmetry on thermal transport. Pure G sequences display evidence of quasi-ballistic transport, whereas adding even a single M layer strongly disrupts heat conduction. The experimental data are described well by molecular dynamics simulations, which include thermal expansion, accounting for the effect of finite temperature on the interlayer spacing. The simulations show that an increase of ~2.4% in the layer separation of GMGMG, relative to its value at 300 K, can lead to a doubling of the thermal resistance. Using these design rules, we experimentally demonstrate a five-layer GMGMG superlattice “thermal metamaterial” with an ultralow effective cross-plane thermal conductivity comparable to that of air.

2D materials↗
DOE OSTI2020

Néel-type skyrmion in WTe 2 /Fe 3 GeTe 2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii–Moriya interaction and Néel-type skyrmions are induced at the WTe 2 /Fe 3 GeTe 2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii–Moriya interaction is estimated to have a large energy of 1.0 mJ m –2 . This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.

42 ENGINEERING↗
DOE OSTI2022

Large-gap insulating dimer ground state in monolayer IrTe2

Abstract Monolayers of two-dimensional van der Waals materials exhibit novel electronic phases distinct from their bulk due to the symmetry breaking and reduced screening in the absence of the interlayer coupling. In this work, we combine angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy to demonstrate the emergence of a unique insulating 2 × 1 dimer ground state in monolayer 1 T -IrTe 2 that has a large band gap in contrast to the metallic bilayer-to-bulk forms of this material. First-principles calculations reveal that phonon and charge instabilities as well as local bond formation collectively enhance and stabilize a charge-ordered ground state. Our findings provide important insights into the subtle balance of interactions having similar energy scales that occurs in the absence of strong interlayer coupling, which offers new opportunities to engineer the properties of 2D monolayers.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Superconductivity from energy fluctuations in dilute quantum critical polar metals

Abstract Superconductivity in low carrier density metals challenges the conventional electron-phonon theory due to the absence of retardation required to overcome Coulomb repulsion. Here we demonstrate that pairing mediated by energy fluctuations, ubiquitously present close to continuous phase transitions, occurs in dilute quantum critical polar metals and results in a dome-like dependence of the superconducting T c on carrier density, characteristic of non-BCS superconductors. In quantum critical polar metals, the Coulomb repulsion is heavily screened, while the critical transverse optical phonons decouple from the electron charge. In the resulting vacuum, long-range attractive interactions emerge from the energy fluctuations of the critical phonons, resembling the gravitational interactions of a chargeless dark matter universe. Our estimates show that this mechanism may explain the critical temperatures observed in doped SrTiO 3 . We provide predictions for the enhancement of superconductivity near polar quantum criticality in two- and three-dimensional materials that can be used to test our theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Bandgap recovery of monolayer MoS 2 using defect engineering and chemical doping

Two-dimensional transition metal dichalcogenide materials have created avenues for exciting physics with unique electronic and photonic applications. Among these materials, molybdenum disulfide is the most known due to extensive research in understanding its electronic and optical properties. In this paper, we report on the successful growth and modification of monolayer MoS 2 (1L MoS 2 ) by controlling carrier concentration and manipulating bandgap in order to improve the efficiency of light emission. Atomic size MoS 2 vacancies were created using a Helium Ion Microscope, then the defect sites were doped with 2,3,5,6-tetrafluro7,7,8,8-tetracyanoquinodimethane (F4TCNQ). The carrier concentration in intrinsic (as-grown) and engineered 1L MoS 2 was calculated using Mass Action model. The results are in a good agreement with Raman and photoluminescence spectroscopy as well as Kelvin probe force microscopy characterizations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Phenomenological mechanisms of hybrid organic–inorganic perovskite thin film deposition by RIR-MAPLE

Resonant infrared, matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a promising technique for the physical vapor deposition of hybrid organic–inorganic perovskites. The approach already has been used to deposit both three-dimensional and two-dimensional hybrid perovskites with material quality comparable to those synthesized by solution processing. However, the phenomenological mechanisms of hybrid perovskite film formation by RIR-MAPLE have not been articulated. Therefore, this work presents a careful investigation of film formation mechanisms of three-dimensional methylammonium lead halide perovskites by considering the temporal evolution of morphology, crystallinity, and optical properties of films deposited by RIR-MAPLE.

Barraza, E. T. (ORCID:0000000328681496)↗