Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Switch”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,009 records · Page 56

Record performance in intrinsic, impurity-free lateral diamond photoconductive semiconductor switches

Photoconductive semiconductor switches (PCSSs) are fabricated on type IIa diamond substrates with varying boron and nitrogen impurity levels (<10 14 –10 16 cm –3 ). The photoresponse of lateral PCSS is reported over the incident laser wavelength range (212–240 nm), energy per pulse (5–65 μJ), and DC bias (–1.2 to +1.2 kV). The PCSS device with the lowest boron and nitrogen impurity concentration achieves the highest normalized responsivity of 9.1 × 10 –8 A-cm/W-V, peak photocurrent of 8.0 A, and on/off ratio of 2.3 × 10 11 at a DC bias of +1.2 kV with the potential for even higher currents at increased DC bias. All PCSS display fast rise times (<3 ns), limited by the laser's rise time. However, photoresponse measurements reveal that higher impurity levels reduce the photocurrent and decrease the on/off ratio. Furthermore, these results highlight the performance advantages of using low background concentration type IIa diamond substrates for PCSS fabrication and present a promising route toward advanced high-power, high-speed diamond-based switches.

42 ENGINEERING↗

Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)

Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Q-switching of a thulium-doped fibre laser using a holmium-doped fibre saturable absorber

We have proposed and demonstrated a new passively Q-switched thulium-doped fibre laser configuration. A distinctive feature of this configuration is the use of a heavily holmium-doped fibre for Q-switching. Lasing was obtained at 1.96 μm, with a pulse energy of 3 μJ and pulse duration of 600 ns. The highest pulse repetition rate was 80 kHz. (control of laser radiation parameters)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber

A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJ and peak power of 2.8 kW. (control of laser radiation parameters)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Continuous-wave and actively Q-switched resonantly dual-end-pumped Er : YAG ceramic laser emitting at 1.6 μm

We demonstrate a continuous-wave (cw) and actively Q-switched Er : YAG ceramic laser resonantly dual-end-pumped by a 1532 nm fibre-coupled laser diode. A maximum cw output power of 1.48 W at 1645.3 nm is obtained at an absorbed pump power of 12.72 W, corresponding to a slope efficiency of 19.2%. In the Q-switched regime the maximum pulse energy of 0.84 mJ is reached at a pulse repetition rate of 100 Hz, pulse duration of 48.03 ns and absorbed pump power of 10.51 W. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

1500-nm Q-switched fibre laser with carbon nanotubes

A Q-switched fibre laser operating at 1500 nm is proposed and demonstrated. The laser uses a saturable absorber (SA) based on carbon nanotubes (CNTs) to generate Q-switched pulses, while a 30-m-long depressed-cladding erbium-doped fibre (DC-EDF) provides the necessary gain in the desired wavelength region. The proposed laser has lasing and pulsed thresholds of 30 mW and 50 mW respectively, along with a maximum output power, pulse energy and peak power of 0.5 mW, 7.6 nJ and 2.2 mW. Additionally, the output of the system also has a maximum repetition rate of 59.4 kHz with the shortest pulse duration measured at 3.4 μs. The output pulses are smooth and uniform, with no indication of self mode-locking. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nd{sup 3+} : YAG laser based on the {sup 4}F{sub 3/2} → {sup 4}I{sub 13/2} secondary transition with a phase-conjugate electro-optically Q-switched open multiloop cavity

Lasing on the {sup 4}F{sub 3/2} → {sup 4}I{sub 13/2} secondary transition (λ = 1.34 μm) in a Nd{sup 3+} : YAG laser with phase conjugation by four-wave mixing directly in the active laser medium was experimentally studied in the regime of electro-optic Q-switching of an open multiloop cavity. The use of an electro-optic Q-switch with a controllable delay of its opening made it possible to increase the amplitude and temporal stabilities of the output laser parameters. The maximum laser pulse energy was 100 mJ at a pulse duration of 120 ns. The phase-conjugate radiation divergence was 0.8 mrad at beam quality . Nonlinear optical conversion of 1.34 μm laser radiation to visible radiation was achieved experimentally. Second and third harmonic generation at wavelengths of 0.67 and 0.446 μm with conversion efficiencies of 25 % and 8 %, respectively, was demonstrated. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light

The temporal dynamics of diode-side-pumped Yb – Er laser, with a passive Co{sup 2+} : MgAl{sub 2}O{sub 4} Q switch illuminated by a light beam (total fluence of 0.15 – 0.16 J cm{sup −2}) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset delay and the time jitter ΔT{sub gi}. The dependence of ΔT{sub gi} on the interval between the instant of switching the illumination module on and the lasing peak position t{sub i} has a minimum at |t{sub i}| ≈ 10 μs. The decrease in ΔT{sub gi} with a change in |t{sub i}| from 90 to 10 μs indicates that instant of lasing peak occurrence for the Yb – Er laser is partially controlled by the pulse from the highly stable semiconductor module. If |t{sub i}| < 10 μs, the enhanced luminescence fluence in the cavity of Yb – Er laser exceeds 0.16 J cm{sup −2}; the light beam from the module does not affect much the lasing process in the ytterbium – erbium laser; and, as a consequence, the time jitter recovers the initial value. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Light-triggered thermal conductivity switching in azobenzene polymers

Materials that can be switched between low and high thermal conductivity states would advance the control and conversion of thermal energy. Employing in situ time-domain thermoreflectance (TDTR) and in situ synchrotron X-ray scattering, we report a reversible, light-responsive azobenzene polymer that switches between high (0.35 W m –1 K –1 ) and low thermal conductivity (0.10 W m –1 K –1 ) states. This threefold change in the thermal conductivity is achieved by modulation of chain alignment resulted from the conformational transition between planar ( trans ) and nonplanar ( cis ) azobenzene groups under UV and green light illumination. This conformational transition leads to changes in the π-π stacking geometry and drives the crystal-to-liquid transition, which is fully reversible and occurs on a time scale of tens of seconds at room temperature. Furthermore this result demonstrates an effective control of the thermophysical properties of polymers by modulating interchain π-π networks by light.

36 MATERIALS SCIENCE↗

ITER ECH Switch Design and Analysis

The electron cyclotron heating system (ECH) on ITER uses 24 evacuated microwave transmission lines carrying up to 1.4 MW of power each at 170 GHz to provide resonance heating of electrons in the ITER plasma and to enable plasma current drive. A critically important component in this system is the microwave switch that allows the microwaves to be directed from the gyrotrons to either dummy loads or between launchers in the upper and equatorial ports of the ITER tokamak while maintaining the vacuum integrity of the transmission lines. A moveable, water-cooled CuCrZr mirror is used to redirect the microwave transmission between two orthogonal waveguides. In this paper, we describe the optimized design of the mirror cooling passages produced by computational fluid dynamics analysis using ANSYS CFX with k-ε and k-ω shear stress transport turbulence models, and verify that the design parameters for mass flow rate, inlet temperature and pressure are adequate for good thermomechanical performance. Non-uniform heating of the mirror face from the incident microwaves induces deflections that should be less than 25 microns to meet the integrated transmission line efficiency specification. In the current 1.4 MW switch design, 0.03 kg/s of 36°C water at 10 bar inlet pressure can remove the 2660 W of ohmic heating in the mirror produced by the elliptical polarization power and maintain the surface temperature below 150°C. The water delta-T is 21°C with a 0.5 bar pressure drop in the mirror. Finally, the maximum predicted displacement in the center of the mirror face is less than 25 μm.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DNA-mediated excitonic upconversion FRET switching

Excitonics is a rapidly expanding field of nanophotonics in which the harvesting of photons, ensuing creation and transport of excitons via Förster resonant energy transfer (FRET), and subsequent charge separation or photon emission has led to the demonstration of excitonic wires, switches, Boolean logic and light harvesting antennas for many applications. FRET funnels excitons down an energy gradient resulting in energy loss with each step along the pathway. Conversely, excitonic energy up conversion via up conversion nanoparticles (UCNPs), although currently inefficient, serves as an energy ratchet to boost the exciton energy. Although FRET-based up conversion has been demonstrated, it suffers from low FRET efficiency and lacks the ability to modulate the FRET. We have engineered an up conversion FRET-based switch by combining lanthanide-doped UCNPs and fluorophores that demonstrates excitonic energy up conversion by nearly a factor of 2, an excited state donor to acceptor FRET efficiency of nearly 25%, and an acceptor fluorophore quantum efficiency that is close to unity. These findings offer a promising path for energy up conversion in nanophotonic applications including artificial light harvesting, excitonic circuits, photovoltaics, nanomedicine, and optoelectronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Magnetic switching in Weyl semimetal-superconductor heterostructures

Here, we present a switching mechanism that utilizes the proximity coupling between the surface spin texture of a Weyl semimetal and a superconductor in a Weyl semimetal-superconductor Weyl semimetal trilayer heterostructure. We show that the superconductivity in the middle layer can be fully suppressed by the surface spin texture of the Weyl semimetals in the presence of an external magnetic field, but it can be recovered again by only changing the field direction. The restoration of the middle-layer superconductivity indicates a sharp transition to a low-resistance state. This sharp switching effect, realizable using a Weyl semimetal because of its strong spin-momentum locking and surface spin polarization, is a promising avenue for novel superconducting spin-valve applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Role of element-specific damping in ultrafast, helicity-independent, all-optical switching dynamics in amorphous (Gd,Tb)Co thin films

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (a-) rare earth-transition metal (a-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic a-Gd 22-x Tb x Co 78 thin films, from x=0 to 18, and elucidate the role of Gd in HI-AOS in a-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with L=0) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing a-Gd 10 Tb 12 Co 78 leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that accounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element-specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Unidirectional multipulse helicity-independent all-optical switching in [Ni/Pt] based synthetic ferrimagnets

Nickel-platinum-based synthetic ferrimagnets (SFi's) are highly tunable and rare-earth-free materials that allow ultrafast all optical control of magnetism to be explored. This study considers a SFi composed of a ferromagnetic [Ni/Pt] multilayer and a ferromagnetic Co layer, separated by an Ir layer that mediates an antiferromagnetic coupling. Helicity-independent all optical switching (HI-AOS) between two antiparallel magnetization states is observed. AOS may be realized at increased temperature through reduction of the thickness of the Pt layers. Switching is unidirectional and has a strong dependence on the applied magnetic field history, which suggests the possible presence of a nanoscale magnetic texture that may be important in controlling AOS in SFi systems. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A polarization-switch effect of silicon crystals under multiple-beam diffraction geometry

On the basis of rigorous dynamical-theory calculations, a complete X-ray polarization-switch effect of silicon crystals at the exact multiple-beam diffraction condition is demonstrated in this paper. The underlying physical mechanism of this unique phenomenon can be revealed using a simple multiple-wave propagation and interference model. The constructive and destructive interference of the multiple detoured-diffraction beams along the direction of the primary diffracted beam directly leads to the complete polarization switch. This phenomenon can be realized using both synchrotron and laboratory X-ray sources at many discrete wavelengths, and used to design a novel crystal-based polarizer to achieve a 90° polarization rotation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Motion Control of Hydraulic Actuators In the Presence of Discrete Pressure Rail Switching

Conventional off-highway mobile machines are hydraulically actuated and have poor energy efficiencies. The goal to increase system efficiency and to reap the benefits of electrification have led to the creation of a novel Hybrid Hydraulic-Electric Architecture (HHEA) which could significantly increase efficiency, decrease the sizes and cost of electrical components, and maintain control performance. The key concept is to utilize a set of common pressure rails to provide the majority of power via the power dense hydraulics and to modulate that power by small electric components, which are less power dense, for precise control. The paper presents the motion control strategy for this architecture. The architecture presents a distinct challenge in that as the energy minimization algorithm selects different pressure rails, the system could experience large discrete jumps in pressures that impact control performance, especially when the electric components are torque limited. To meet this challenge, a passivity based back-stepping controller is used as the nominal controller between pressure rail switching events and a separate transition controller is used to deal with the pressure rail switching events. Two transition controllers are proposed, one uses the electric motor torque as the input, and the other also uses valve timing as a second input. For both transition controllers, a least norm control approach is used to steer the system states to the exact desired states at the end of the short transition period (~ 40 ms). The transition controllers are able to reduce the tracking error and the required electric motor torque, and hence achieve better control performance even with smaller electric components.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Farm-level Interactions Study of a Novel Tri-port Soft-switching Medium-Voltage String Inverter (MVSI) based Large-scale PV-Plus-Storage Farms

A medium-voltage photovoltaic power conversion unit supported by battery based on a novel topology of soft switching solid state transformer is presented in this paper. It can reduce the Levelized Cost of Energy (LCOE) of PVS farm in an extended degree. However, its capability to provide grid-support services, such as frequency response, reactive power support, etc, have not been demonstrated. A series/parallel combination of these modules form a large 20 MVA solar farm. To validate them with reduced computation burden, a small-signal model of MVSI is firstly derived and validated in this paper. The model has been validated to match the full-switch model in both steady-state and dynamic conditions. Next, a farm-level simulation based on the proved small-signal model was implemented to demonstrate grid-support services. Real irradiation date from NREL is used to show the operational capabilities of the system. As a result, the overall farm is simulated based on MATLAB/Simulink domain to check the performance for various cases namely: power transfer from dc-ac side, reactive power support during grid voltage sag and utilization of battery during grid voltage disturbance or partial shading over PV panels.

14 SOLAR ENERGY↗

A Fast-Response High-Accuracy Overvoltage Protection Circuit for Soft-Switching Current-Source Converters

Although voltage-source converters (VSCs) have been a focus of research for decades and are widely applied in numerous applications, they face great challenges in short-circuit failures, high dv/dt and electromagnetic interference (EMI), especially using wide bandgap devices. Instead, current-source converters (CSCs) are attracting increasing attention in recent years owing to their friendliness to short-circuit faults, improved EMI, etc. For CSCs, overvoltage is the most catastrophic failure since the semiconductor devices can hardly withstand an overvoltage for a short pulse. In this paper, a fast-response high-accuracy overvoltage protection (OVP) circuit is proposed to protect CSCs from overvoltage damage. It also features a small form factor, good noise-immunity, friendly retrofit capability, and no need for active switches. In this paper, the operating principle and design guideline of the proposed OVP circuit is introduced. Its effectiveness is validated in soft-switching solid-state transformer (S4T) at 500 V. In experiments, the voltage detection error of less than 5% and a propagation delay of fewer than 400 ns have been achieved.

30 DIRECT ENERGY CONVERSION↗