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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Impurity gradients and high efficiency solar cells

One potential means of improving the efficiency of solar cells especially after space irradiation is to incorporate built-in fields into the device through the use of impurity doping gradients. A detailed numerical calculation of solar cell performance has been used to study various types of doping gradients. In general, the predicted improvements in performance have been less than previously reported due to various device effects such as, high injection and the dependence of lifetime on doping density.

Fang, C. R.↗
NASA NTRS1980

Solar cell system having alternating current output

A monolithic multijunction solar cell was modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated curcuit power conditioning electronics was incorporated in a module containing a solar cell power supply.

Evans, J. C., Jr.↗
NASA NTRS1980

Summary results of the ATS-6 solar cell flight experiment

Synchronous orbit performance data are analyzed for solar cells of 13 different configurations involved in the ATS-6 solar cell radiation damage experiment. It is found that the cells generally performed as expected through 6 to 9 months in orbit, but that after 2-1/3 years were more severely degraded in current than expected. An anomalous additional degradation of 5-9% in short circuit current has been observed for some cells.

Goldhammer, L. J.↗
DOE OSTI2020

Fabrication of flexible perovskite solar cells via rapid thermal annealing

Adaptability, lightweight, and low cost of materials make flexible perovskite solar cells essential for the perovskite technology to breach commercial photovoltaic markets. Roll-to-roll manufacturing has great potential for high-throughput perovskite manufacturing; however, conventional annealing methods are not capable of producing flexible perovskite solar cells at scale. Conventional methods are time consuming and may compromise functionality of flexible substrates under tension. Here, we introduce a bladecoated perovskite thin film on flexible ITO-coated PET annealed via rapid thermal annealing (RTA) that reduces post-deposition processing time from ~150 s to ~14 s. As a result, performance was not sacrificed for scalability as a perovskite solar cell was produced with a power conversion efficiency (PCE) of 14.58%.

14 SOLAR ENERGY↗
NASA NTRS1983

Limitations on solar cell open-circuit voltage and efficiency

Techniques used to determine the open-circuit voltage of solar cells are analyzed. It is noted that the computational procedures for determining the output characteristics of a solar cell depend on a thorough understanding of the behavior of individual components. However, amorphous materials and combination solar cells exhibit increasingly complex behaviors and theoretical analyses therefore are continually more dependent on experimental data for verification. Formulations are defined for the base region and for diffusion length measurement. Experimental results are cited to show that, for low resistivity, planar surface cells, the dark current from the emitter is the dominant factor limiting increases in the Voc, which can be enhanced by improving the efficiency of the doping levels and profile to minimize the effects of bandgap narrowing, junction recombination current, and diffusion length of the emitter region.

Meulenberg, A., Jr.↗
DOE OSTI2020

Ambient Pressure XPS Investigation of Thermally Stable Halide Perovskite Solar Cells via Post-Treatment

Long-term thermal stability is one limiting factor that impedes the commercialization of perovskite solar cell. Inspired by our prior results from machine learning, we discover that coating a thin layer of 4,4’-dibromotriphenylamine (DBTPA) on top of a CH 3 NH 3 PbI 3 (MAPbI 3 ) thin film can improve the stability of the resultant perovskite solar cells. The passivated perovskite solar cells retained more than 96% of their initial power conversion efficiency over 1000 h at 85 °C in N2 atmosphere without encapsulation. Near-ambient pressure x-ray photoelectron spectroscopy (NAP-XPS) was employed to investigate the evolution of composition and evaluate thermal and moisture stability by in-situ studies. A comparison between pristine MAPbI 3 films and DBTPA-treated films shows the DBTPA treatment suppresses the escape of iodide and methylamine up to 150 °C under 5 mbar humidity. Furthermore, we have used ATR-FTIR and XPS to probe the interactions between DBTPA and MAPbI3 surface. The results prove that DBTPA coordinate with perovskite by Lewis acid-base and cation-π interaction. Compared with the 19.9% efficiency of pristine sample, the champion efficiency of passivated sample reaches 20.6%. Finally, our results reveal DBTPA as a new post-treating molecule that not only leads to the improvement of photovoltaic efficiency but also thermal and moisture stability.

14 SOLAR ENERGY↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
NASA NTRS1975

The effect of sunshine testing on terrestrial solar cell system components

Samples of FEP-encapsulated silicon solar cells and various potential encapsulation or cover materials were subjected to both accelerated and real-time testing. The durability of the samples was determined by measuring changes in solar cell output or optical transmission as a function of exposure. The tests revealed some problem areas in the structural integrity of the materials, e.g., delamination and cracking in FEP. These problems were probably related to defects in fabrication. FEP and Aclar had the least transmission loss after accelerated exposure equivalents of 5 and 3 years, respectively.

Forestieri, A. F.↗
DOE OSTI2021

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗
NASA NTRS1989

High-efficiency heteroepitaxial solar cells for space power applications

The experimental results for several technical approaches aimed at achieving highly efficient solar cells for space-power applications are reported. Efficiencies of up to 24.5 percent (170X, AM0) and 21.7 percent (1X, AM0) have been achieved with homoepitaxial GaAs p/n cells. This one-sun AM0 efficiency value is believed to be the highest reported to date. Tandem solar cells utilizing GaAs-on-Ge structures have been fabricated and shown to have efficiencies up to 21.3 percent (1X, AM0), and a GaAs-on-Si cell at 15.2 percent (1X, AM0) is reported. Homoepitaxial n/p InP cells with an efficiency of 18.8 percent (1X, AM0) are also reported. The fabrication of heteroepitaxial InP solar cells with one-sun AM0 efficiency values of 9.4 percent (on GaAs) and 7.2 percent (on Si) is described.

Vernon, S. M.↗
NASA NTRS1992

Further study of inversion layer MIS solar cells

Many inversion layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. As of today, the best cell fabricated by us has a 9.138 percent AMO efficiency, with FF = 0.641, V(sub OC) = 0.557 V, and I(sub SC) = 26.9 micro A. Efforts made for fabricating an IL/MOS solar cell with reasonable efficiencies are reported. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved by using two different process methods. Comparison of these two different thin oxide processings is reported. The effects of annealing time of the sample are discussed. The range of the resistivity of the substrates used in the IL cell fabrication is experimentally estimated. Theoretical study of the MIS contacts under dark conditions is addressed.

Ho, Fat Duen↗
DOE OSTI2021

Simulation App for Time-Resolved Photoluminescence in Thin-Film Solar Cells

We develop a COMSOL Multiphysics-based model and application, or "app", for time-resolved photoluminescence (TRPL) measurements in thin-film solar cells. TRPL is commonly used to measure recombination in thin-film solar cells. However, simulations show that decay times extracted from TRPL data are not, in general, equal to the Shockley-Read-Hall lifetime parameter set in the model. Here, we present a model and app, using graded CdSe y Te 1-y solar cells as an example, that can be used to study impacts of a range of potentially important material and measurement parameters on TRPL results.

minority-carrier lifetime↗
DOE OSTI2021

Fabrication of Flexible Perovskite Solar Cells via Rapid Thermal Annealing

Adaptability, lightweight, and low cost of materials make flexible perovskite solar cells essential for the perovskite technology to breach commercial photovoltaic market. Roll-to-roll manufacturing has great potential for high-throughput perovskite manufacturing; however, conventional annealing methods are not capable of producing flexible perovskite solar cells at scale. Rapid thermal annealing (RTA), a radiative method, is utilized on roll-to-roll lines within many different industries and has shown promising potential for perovskite annealing. Here, we introduce a blade-coated perovskite thin film on flexible ITO-coated PET annealed via RTA that reduces post-deposition processing time from ~150 seconds to ~14 seconds. Performance was not sacrificed for scalability as a perovskite solar cell was produced with a power conversion efficiency (PCE) of 14.58%.

Martin, Blake↗
NASA NTRS1994

Summary of solar cell data from the Long Duration Exposure Facility (LDEF)

The contractor has obtained and reviewed data relating solar cells assemblies (SCA's) flown as part of the following LDEF experiments: the Advanced Photovoltaic Experiment (S0014); the Solar Array Materials Passive LDEF Experiment (A0171); the Advanced Solar Cell and Coverglass Analysis Experiment (M0003-4); the LDEF Heat Pipe Experiment (S1001); the Evaluation of Thermal Control Coatings Y Solar Cells Experiment (S1002); and the Space Plasma-High Voltage Drainage Experiment (A0054). Where possible, electrical data have been tabulated and correlated with various environmental effects, including meteoroid and debris impacts, radiation exposure, atomic oxygen exposure, contamination, UV radiation exposure, and thermal cycling. The type, configuration, and location of all SCA's are documented here. By gathering all data and results together, a comparison of the survivability of the various types and configurations can be made.

Hill, David C.↗
DOE OSTI2023

Development of HVPE-Grown III-V Solar Cells Passivated with AlInP

We present the first AlInP-passivated solar cells grown by dynamic hydride vapor phase epitaxy (D-HVPE). Single junction (1J) GaAs and GaInP/GaAs (2J) tandems with AlInP passivation achieve AM1.5G efficiencies of 26.0% and 28.5%, respectively, which are the highest reported efficiencies for HVPE-grown devices of each type. 1J devices passivated with either AlInP or GaInP exhibit similar VOC and long wavelength current collection, indicating that both windows provide similar passivation. Adding AlInP passivation to the 2J solar cell improves the VOC by -50 mV relative to the device passivated by a GaInP emitter. These achievements remove one of the last barriers limiting parity of HVPE device efficiencies with state-of-the-art.

AlInP↗
NASA NTRS1982

Multilayer, Front-Contact Grid for Solar Cells

Proposed multilayer, front-contact grid structure for solar cells optimizes collection of photogenerated current with minimum power losses. It is constructed of several layers of conducting grids. With multilayer concept, peak efficiency can occur at higher output-power levels. Because of this, higher solar concentrations can be applied to solar-cell arrays.

Milnes, A. G.↗
NASA NTRS1976

Results from the IMP-J violet solar cell experiment and violet cell balloon flights

The Interplanetary Monitoring Platform-J violet solar cell experiment was flown in an orbit with mild thermal cycling and low hard-particle radiation. The results of the experiment show that violet cells degrade at about the same rate as conventional cells in such an orbit. Balloon flight measurements show that violet solar cells produce approximately 20% more power than conventional cells.

Gaddy, E. M.↗