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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

SU-E-T-447: Growth of Metal Whiskers Under External Beam Irradiation: Experimental Evidence and Implications in Medical Electronic Devices for Radiation Therapy Treatments

Purpose: Thin metallic protrusions, termed “whiskers,” have been identified as a cause of failure in devices ranging from satellites to pacemakers. For decades, lead was used in tin-based soldering alloys to suppress whisker formation. With the adoption of the Restriction of Hazardous Substances act and the expiration of its exemption on medical devices, including implanted medical devices (IMDs), electronic circuits are required to be lead-free as of July 2014. The effect of radiation on such soldering components remains unknown. Methods: We have irradiated a thin (150 nm) tin metal layer, deposited on a 3 mm thick glass substrate, with a 6 MeV medical linac (Varian TrueBeam) electron beam in five 2-hour long sessions. After receiving ∼10 kGy, whisker growth on the sample was assessed with scanning electron microscopy and compared to a reference sample not exposed to radiation. Results: After 10 hours of irradiation, the sample was found to develop intense whisker infestation, while the reference sample remained in its pristine as-deposited condition. Repeating the same irradiation schedule generated more and longer whiskers. The observed phenomenon can be explained through charge accumulation in the glass substrate, generating an electric field that promotes whisker growth. The observed substrate glass darkening under irradiation points towards development of color centers related to charge trapping. Experiments on the same type of samples with direct application of the external field in a capacitor-like setting also resulted in intense whisker growth. Conclusion: Extreme care should be taken in dealing with all electronic devices, especially IMDs, produced with lead-free solder and components, subject to radiation exposure. While in our experiments strong electric fields were intentionally generated to accelerate whisker growth over hours, in everyday use the circuit soldering may cause problems in a matter of days or months. Designated reliability testing under radiation must be conducted. This work is partially supported by NRC grant No. NRC-HQ-12-G-38-0042.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2010

Collective Thomson scattering of a high power electron cyclotron resonance heating beam in LHD (invited)

Collective Thomson scattering (CTS) system has been constructed at LHD making use of the high power electron cyclotron resonance heating (ECRH) system in Large Helical Device (LHD). The necessary features for CTS, high power probing beams and receiving beams, both with well defined Gaussian profile and with the fine controllability, are endowed in the ECRH system. The 32 channel radiometer with sharp notch filter at the front end is attached to the ECRH system transmission line as a CTS receiver. The validation of the CTS signal is performed by scanning the scattering volume. A new method to separate the CTS signal from background electron cyclotron emission is developed and applied to derive the bulk and high energy ion components for several combinations of neutral beam heated plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Differential electron yield imaging with STXM

In this report total electron yield (TEY) imaging is an established scanning transmission X-ray microscopy (STXM) technique that gives varying contrast based on a sample's geometry, elemental composition, and electrical conductivity. However, the TEY-STXM signal is determined solely by the electrons that the beam ejects from the sample. A related technique, X-ray beam-induced current (XBIC) imaging, is sensitive to electrons and holes independently, but requires electric fields in the sample. Here we report that multi-electrode devices can be wired to produce differential electron yield (DEY) contrast, which is also independently sensitive to electrons and holes, but does not require an electric field. Depending on whether the region illuminated by the focused STXM beam is better connected to one electrode or another, the DEY-TXM contrast changes sign. DEY-STXM images thus provide a vivid map of a device's connectivity landscape, which can be key to understanding device function and failure. To demonstrate an application in the area of failure analysis, we image a 100 nm, lithographically-defined aluminum nanowire that has failed after being stressed with a large current density.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

Surface control of epitaxial manganite films via oxygen pressure

The trend to reduce device dimensions demands increasing attention to atomic-scale details of structure of thin films as well as to pathways to control it. We found that this is of special importance in the systems with multiple competing interactions. We have used in situ scanning tunneling microscopy to image surfaces of La 5/8 Ca 3/8 MnO 3 films grown by pulsed laser deposition. The atomically resolved imaging was combined with in situ angle-resolved X-ray photoelectron spectroscopy. We find a strong effect of the background oxygen pressure during deposition on structural and chemical features of the film surface. Deposition at 50 mTorr of O 2 leads to mixed-terminated film surfaces, with B-site (MnO 2 ) termination being structurally imperfect at the atomic scale. Moreover, a relatively small reduction of the oxygen pressure to 20 mTorr results in a dramatic change of the surface structure leading to a nearly perfectly ordered B-site terminated surface with only a small fraction of A-site (La,Ca)O termination. This is accompanied, however, by surface roughening at a mesoscopic length scale. The results suggest that oxygen has a strong link to the adatom mobility during growth. The effect of the oxygen pressure on dopant surface segregation is also pronounced: Ca surface segregation is decreased with oxygen pressure reduction.

42 ENGINEERING↗
DOE OSTI2021

Flat epitaxial quasi-1D phosphorene chains

The emergence of peculiar phenomena in 1D phosphorene chains (P chains) has been proposed in theoretical studies, notably the Stark and Seebeck effects, room temperature magnetism, and topological phase transitions. Attempts so far to fabricate P chains, using the top-down approach starting from a few layers of bulk black phosphorus, have failed to produce reliably precise control of P chains. We show that molecular beam epitaxy gives a controllable bottom-up approach to grow atomically thin, crystalline 1D flat P chains on a Ag(111) substrate. Scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory calculations reveal that the armchair-shaped chains are semiconducting with an intrinsic 1.80 ± 0.20 eV band gap. This could make these P chains an ideal material for opto-electronic devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy

Unraveling local dynamic charge processes is vital for progress in diverse fields, from microelectronics to energy storage. This relies on the ability to map charge carrier motion across multiple length- and timescales and understanding how these processes interact with the inherent material heterogeneities. Towards addressing this challenge, we introduce high-speed sparse scanning Kelvin probe force microscopy, which combines sparse scanning and image reconstruction. This approach is shown to enable sub-second imaging (>3 frames per second) of nanoscale charge dynamics, representing several orders of magnitude improvement over traditional Kelvin probe force microscopy imaging rates. Bridging this improved spatiotemporal resolution with macroscale device measurements, we successfully visualize electrochemically mediated diffusion of mobile surface ions on a LaAlO 3 /SrTiO 3 planar device. Such processes are known to impact band-alignment and charge-transfer dynamics at these heterointerfaces. Furthermore, we monitor the diffusion of oxygen vacancies at the single grain level in polycrystalline TiO 2 . Through temperature-dependent measurements, we identify a charge diffusion activation energy of 0.18 eV, in good agreement with previously reported values and confirmed by DFT calculations. Together, these findings highlight the effectiveness and versatility of our method in understanding ionic charge carrier motion in microelectronics or nanoscale material systems.

25 ENERGY STORAGE↗
DOE OSTI2016

The nature of the Fe-graphene interface at the nanometer level

The emerging fields of graphene-based magnetic and spintronic devices require a deep understanding of the interface between graphene and ferromagnetic metals. This work reports a detailed investigation at the nanometer level of the Fe–graphene interface carried out by angle-resolved photoemission, high-resolution photoemission from core levels, and scanning tunnelling microscopy. Quasi-freestanding graphene was grown on Pt(111), and the iron film was either deposited atop or intercalated beneath graphene. Calculations and experimental results show that iron strongly modifies the graphene band structure and lifts its π band spin degeneracy.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Evaluating the oxidative, photothermal and electrical stability of colloidal nanocrystal solids

IV-VI quantum dot (QD) solids are a novel class of granular electronic materials with great technological potential (e.g., in photodetectors, field-effect transistors (FETs), and solar cells), but their oxidative and thermal instability present a barrier to practical applications [1]. Poor stability is a fundamental issue facing many nanoscale materials due to high surface area and surface energy. Basic studies are needed to elucidate the most important mechanisms of degradation and develop robust countermeasures if QD materials are to become technologically important. This project determined the degradation mechanisms of IV-VI QD solids (primarily PbSe and PbS) and introduced new chemical strategies to drastically improve their performance, stability, and operating lifetimes [2-5]. Our approach was based on (1) detailed testing of QD thin film materials (principally FETs and solar cells) as a function of oxidative and thermal stress, and (2) the use of organic and inorganic approaches to link the QDs into strongly electronically coupled, high-mobility films, prevent their oxidation, and eliminate internal degrees of freedom that lead to film instability and degradation in response to electrical and thermal stress. Stability against oxidation and thermal degradation was the major focus of this project. We have evaluated the stability of QD thin films and interfaces at temperatures less than 100°C (the regime most relevant to solar and transistor applications). Low-temperature oxidation and sintering of QD films have been investigated using optical absorption spectroscopy, Fourier transform infrared spectroscopy (FTIR), current-voltage scanning of transistors and solar cells, X-ray photoelectron spectroscopy, and scanning Kelvin probe microscopy (SKPM). SKPM was used to map the potential profiles of operating QD FETs and solar cells as a function of bias and illumination, which provides detailed information on how the work functions, potential drops and electric field within these devices determine device operation, and set the stage for future studies targeted at understanding and preventing device failure. We pursued two strategies to fabricate QD films with stable electrical characteristics: (1) the use of robust molecular surface ligands [2], and (2) “matrix engineering,” i.e., infilling the QD solid with metal oxide or metal sulfide matrices by low-temperature atomic layer deposition (ALD) to passivate surface states, prevent oxidation, lock the QDs into position, inhibit diffusion, and tune the height and width of the inter-QD potential barriers that govern charge transport [5,6]. Poor stability is a common feature of nanoscale electronic materials, yet stability is all too rarely the focus of basic research. Fundamental studies are therefore needed to elucidate the most important mechanisms of degradation and develop simple yet effective countermeasures. By revealing both how QD solids degrade in response to environmental stresses (oxidative, photothermal, and electric) and how to prevent this degradation, the project has greatly improved our ability to develop stable, high-performance QD materials for real-world applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Development of a 3D optical scanning-based automatic quality assurance system for proton range compensators

Purpose: A new automatic quality assurance (AutoRCQA) system using a three-dimensional scanner (3DS) with system automation was developed to improve the accuracy and efficiency of the quality assurance (QA) procedure for proton range compensators (RCs). The system performance was evaluated for clinical implementation. Methods: The AutoRCQA system consists of a three-dimensional measurement system (3DMS) based on 3DS and in-house developed verification software (3DVS). To verify the geometrical accuracy, the planned RC data (PRC), calculated with the treatment planning system (TPS), were reconstructed and coregistered with the measured RC data (MRC) based on the beam isocenter. The PRC and MRC inner surfaces were compared with composite analysis (CA) using 3DVS, using the CA pass rate for quantitative analysis. To evaluate the detection accuracy of the system, the authors designed a fake PRC by artificially adding small cubic islands with side lengths of 1.5, 2.5, and 3.5 mm on the inner surface of the PRC and performed CA with the depth difference and distance-to-agreement tolerances of [1 mm, 1 mm], [2 mm, 2 mm], and [3 mm, 3 mm]. In addition, the authors performed clinical tests using seven RCs [computerized milling machine (CMM)-RCs] manufactured by CMM, which were designed for treating various disease sites. The systematic offsets of the seven CMM-RCs were evaluated through the automatic registration function of AutoRCQA. For comparison with conventional technique, the authors measured the thickness at three points in each of the seven CMM-RCs using a manual depth measurement device and calculated thickness difference based on the TPS data (TPS-manual measurement). These results were compared with data obtained from 3DVS. The geometrical accuracy of each CMM-RC inner surface was investigated using the TPS data by performing CA with the same criteria. The authors also measured the net processing time, including the scan and analysis time. Results: The AutoRCQA system accurately detected all fake objects in accordance with the given criteria. The median systematic offset of the seven CMM-RCs was 0.08 mm (interquartile range: −0.25 to 0.37 mm) and −0.08 mm (−0.58 to 0.01 mm) in the X- and Y-directions, respectively, while the median distance difference was 0.37 mm (0.23–0.94 mm). The median thickness difference of the TPS-manual measurement at points 1, 2, and 3 was −0.4 mm (−0.4 to −0.2 mm), −0.2 mm (−0.3 to 0.0 mm), and −0.3 mm (−0.6 to −0.1 mm), respectively, while the median difference of 3DMS was 0.0 mm (−0.1 to 0.2 mm), 0.0 mm (−0.1 to 0.3 mm), and 0.1 mm (−0.1 to 0.2 mm), respectively. Thus, 3DMS showed slightly better values compared to the manual measurements for points 1 and 3 in statistical analysis (p < 0.05). The average pass rate of the seven CMM-RCs was 97.97% ± 1.68% for 1-mm CA conditions, increasing to 99.98% ± 0.03% and 100% ± 0.00% for 2- and 3-mm CA conditions, respectively. The average net analysis time was 18.01 ± 1.65 min. Conclusions: The authors have developed an automated 3DS-based proton RC QA system and verified its performance. The AutoRCQA system may improve the accuracy and efficiency of QA for RCs.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2013

The reversal of the laser-beam-induced-current contrast with varying illumination density in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell

We apply an array of correlated spatially-resolved techniques, including μ-Raman/photoluminescence/reflectance/laser-beam-induced-current in conjunction with scanning electron microscopy and atomic force microscopy, to study the impact of the microscopic-scale thickness inhomogeneity of CdS layer in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell. Thicker CdS regions are found to cause more light reflecting loss thus yield lower external quantum efficiencies and energy conversion efficiencies than the general area. However, these regions show much less efficiency degradation at high illumination intensity, leading to an inversion of laser-beam-induced-current contrast in the area mapping. While improving the CdS layer uniformity can boost the device performance, the finding further points out the possibility of operating thin-film photovoltaic devices based on the similar materials (such as CuInGaSe{sub 2}, CdTe, Cu{sub 2}ZnSn(S,Se){sub 4}) under a substantially higher illumination density for concentrated photovoltaic and photo-detection.

14 SOLAR ENERGY↗
DOE OSTI2016

Fabrication and characterization of metal–semiconductor–metal ultraviolet photodetector based on rutile TiO{sub 2} nanorod

The fabrication and characterization of a metal–semiconductor–metal ultraviolet photodetector are studied. The photodetector is based on TiO{sub 2} nanorods (NRs) grown on p-type (1 1 1)-oriented silicon substrate seeded with a TiO{sub 2} layer is synthesized by radio frequency reactive magnetron sputtering. A chemical bath deposition is used to grow TiO{sub 2} NRs on Si substrate. The structural and optical properties of the obtained sample are analyzed by using X-ray diffraction and field emission-scanning electron microscopy. Results show a tetragonal rutile structure of the synthesized TiO{sub 2} NRs. Optical properties are further examined using photoluminescence spectroscopy. A sharp and high-intensity UV peak at 367 nm is observed in comparison with visible defect peaks centered at 432 and 718 nm. Upon exposure to 365 nm light (2.3 mW/cm) at 5 V bias, the device displays 76.06 × 10{sup 2} sensitivity, internal photodetector gain of 77.06, photocurrent of the device is 2.62 × 10{sup −5} A and photoresponse peak of 69.7 mA/W. The response and recovery times are calculated as 18.5 and 19.1 ms upon illumination to a pulse UV light (365 nm, 2.3 mW/cm{sup 2}) at 5 V applied bias. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially-integrated photoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Exploring high temperature phenomena related to post-detonation using an electric arc

We report a study of materials recovered from a uranium-containing plasma generated by an electric arc. The device used to generate the arc is capable of sustaining temperatures of an eV or higher for up to 100 μs. Samples took the form of a 4 μm-thick film deposited onto 8 pairs of 17 μm-thick Cu electrodes supported on a 25 μm-thick Kapton backing and sandwiched between glass plates. Materials recovered from the glass plates and around the electrode tips after passage of an arc were characterized using scanning and transmission electron microscopy. Recovered materials included a variety of crystalline compounds (e.g., UO{sub 2}, UC{sub 2}, UCu{sub 5},) as well as mixtures of uranium and amorphous glass. Most of the materials collected on the glass plates took the form of spherules having a wide range of diameters from tens of nanometers to tens of micrometers. The composition and size of the spherules depended on location, indicating different chemical and physical environments. A theoretical analysis we have carried out suggests that the submicron spherules presumably formed by deposition during the arc discharge, while at the same time the glass plates were strongly heated due to absorption of plasma radiation mainly by islands of deposited metals (Cu, U). The surface temperature of the glass plates is expected to have risen to ∼2300 K thus producing a liquefied glass layer, likely diffusions of the deposited metals on the hot glass surface and into this layer were accompanied by chemical reactions that gave rise to the observed materials. These results, together with the compact scale and relatively low cost, suggest that the experimental technique provides a practical approach to investigate the complex physical and chemical processes that occur when actinide-containing material interacts with the environment at high temperature, for example, during fallout formation following a nuclear detonation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Structure and properties of edge dislocations in BiFe O 3

Edge dislocations are frequently found in epitaxial BiFeO 3 multiferroic thin films and are expected to exhibit distinctive and localized magnetoelectric properties. However, an exhaustive characterization of these dislocations at the atomic level has to date been largely overlooked. Here, we use a combination of scanning transmission electron microscopy techniques, atomistic simulations obtained from classical molecular dynamics calculations, and real-space multiple-scattering theory to explore the chemical properties and the bonding characteristics of the atoms located at and near the dislocation cores. We find that in addition to Bi, small amounts of Fe atoms are present in the BiFeO 3 dislocation cores which result in uncompensated Fe spins along the dislocations and give rise to a magnetic signal. Furthermore, our results suggest that edge dislocations in BiFeO 3 films could be efficiently used for realizing BiFeO 3 -based magnetic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2012

Active Flash: Performance-Energy Tradeoffs for Out-of-Core Processing on Non-Volatile Memory Devices

In this abstract, we study the performance and energy tradeoffs involved in migrating data analysis into the flash device, a process we refer to as Active Flash. The Active Flash paradigm is similar to 'active disks', which has received considerable attention. Active Flash allows us to move processing closer to data, thereby minimizing data movement costs and reducing power consumption. It enables true out-of-core computation. The conventional definition of out-of-core solvers refers to an approach to process data that is too large to fit in the main memory and, consequently, requires access to disk. However, in Active Flash, processing outside the host CPU literally frees the core and achieves real 'out-of-core' analysis. Moving analysis to data has long been desirable, not just at this level, but at all levels of the system hierarchy. However, this requires a detailed study on the tradeoffs involved in achieving analysis turnaround under an acceptable energy envelope. To this end, we first need to evaluate if there is enough computing power on the flash device to warrant such an exploration. Flash processors require decent computing power to run the internal logic pertaining to the Flash Translation Layer (FTL), which is responsible for operations such as address translation, garbage collection (GC) and wear-leveling. Modern SSDs are composed of multiple packages and several flash chips within a package. The packages are connected using multiple I/O channels to offer high I/O bandwidth. SSD computing power is also expected to be high enough to exploit such inherent internal parallelism within the drive to increase the bandwidth and to handle fast I/O requests. More recently, SSD devices are being equipped with powerful processing units and are even embedded with multicore CPUs (e.g. ARM Cortex-A9 embedded processor is advertised to reach 2GHz frequency and deliver 5000 DMIPS; OCZ RevoDrive X2 SSD has 4 SandForce controllers, each with 780MHz max frequency Tensilica core). Efforts that take advantage of the available computing cycles on the processors on SSDs to run auxiliary tasks other than actual I/O requests are beginning to emerge. Kim et al. investigate database scan operations in the context of processing on the SSDs, and propose dedicated hardware logic to speed up scans. Also, cluster architectures have been explored, which consist of low-power embedded CPUs coupled with small local flash to achieve fast, parallel access to data. Processor utilization on SSD is highly dependent on workloads and, therefore, they can be idle during periods with no I/O accesses. We propose to use the available processing capability on the SSD to run tasks that can be offloaded from the host. This paper makes the following contributions: (1) We have investigated Active Flash and its potential to optimize the total energy cost, including power consumption on the host and the flash device; (2) We have developed analytical models to analyze the performance-energy tradeoffs for Active Flash, by treating the SSD as a blackbox, this is particularly valuable due to the proprietary nature of the SSD internal hardware; and (3) We have enhanced a well-known SSD simulator (from MSR) to implement 'on-the-fly' data compression using Active Flash. Our results provide a window into striking a balance between energy consumption and application performance.

42 ENGINEERING↗
DOE OSTI2022

Interdiffusion and Formation of Intermetallic Compounds in High-Temperature Power Electronics Substrate Joints Fabricated by Transient Liquid Phase Bonding

Power electronics packages typically comprise a dielectric substrate bonded to a metal layer and attached to heat sinks using a low-thermal-conductivity solder. These multiple layers increase the effective thermal resistance of the package and are responsible for package failures under cyclic thermal loads. Bonding the aluminum nitride dielectric layer (AlN) directly to a low coefficient of thermal expansion (CTE) aluminum silicon carbide (AlSiC) cold plate using copper-aluminum (Cu-Al) transient liquid phase (TLP) bonding has been shown to improve the mechanical reliability of the power electronic packages while making the package more compact by bringing the cooling solutions closer to the devices. This study aims to characterize the Cu-Al bonds formed during the TLP bonding of AlSiC with three different power electronics substrates: pure aluminum nitride (AlN), aluminum (DBA), and copper (DBC). The material compositions and microstructures of the bonds were analyzed using scanning electron microscopy (SEM), x-ray spectroscopy (EDS), confocal scanning acoustic microscopy (C-SAM), and x-ray diffraction (XRD). ..alpha..-Al solid compound was identified as the dominant phase in AlN-AlSiC and Al-AlSiC, with a notable presence of SiC particles. In contrast, three intermetallic phases - ..theta..-CuAl2, ..eta..-CuAl, and ..gamma..'- Cu9Al4 - were observed in the Cu-AlSiC bond. A computational solid-state diffusion model was developed to predict the intermetallic compounds (IMCs) formed during Cu-Al TLP bonding in each system, which supported the observation that an initial Cu volume fraction of 20 % in the material layers produced a final bond composition of >95 % Al with minimal IMC growth. However, increased Cu concentrations produced higher concentration gradients, leading to increased growth of IMCs, Kirkendall voids, and interstitial cracks.

DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Extended Oxygen Octahedral Tilt Proximity near Oxide Heterostructures

The oxide interfaces between materials with different structural symmetries have been actively studied due to their novel physical properties. However, the investigation of intriguing interfacial phenomena caused by the oxygen octahedral tilt (OOT) proximity effect has not been fully exploited, as there is still no clear understanding of what determines the proximity length and what the underlying control mechanism is. Here, we achieved scalability of the OOT proximity effect in SrRuO 3 (SRO) by epitaxial strain near the SRO/SrTiO 3 heterointerface. We demonstrated that the OOT proximity length scale of SRO is extended from 4 unit cells to 14 unit cells by employing advanced scanning transmission electron microscopy. We also suggest that this variation may originate from changes in phonon dispersions due to electron-phonon coupling in SRO. Here, this study will provide in-depth insights into the structural gradients of correlated systems and facilitate potential device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

A Two-Dimensional Manganese Gallium Nitride Surface Structure Showing Ferromagnetism at Room Temperature

Practical applications of semiconductor spintronic devices necessitate ferromagnetic behavior at or above room temperature. In this paper we demonstrate a two-dimensional manganese gallium nitride surface structure (MnGaN-2D) which is atomically thin and shows ferromagnetic domain structure at room temperature as measured by spin-resolved scanning tunneling microscopy and spectroscopy. Application of small magnetic fields proves that the observed magnetic domains follow a hysteretic behavior. Two initially oppositely-oriented MnGaN-2D domains are rotated into alignment with only 120 mT and remain mostly in alignment at remanence. Additionally, the measurements are further supported by first-principles theoretical calculations which reveal highly spin-polarized and spin-split surface states, with spin polarization of up to 95% for manganese partial density of states.

36 MATERIALS SCIENCE↗