Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “ROOM”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

New insights into designing metallacarborane based room temperature hydrogen storage media

Metallacarboranes are promising towards realizing room temperature hydrogen storage media because of the presence of both transition metal and carbon atoms. In metallacarborane clusters, the transition metal adsorbs hydrogen molecules and carbon can link these clusters to form metal organic framework, which can serve as a complete storage medium. Using first principles density functional calculations, we chalk out the underlying principles of designing an efficient metallacarborane based hydrogen storage media. The storage capacity of hydrogen depends upon the number of available transition metal d-orbitals, number of carbons, and dopant atoms in the cluster. These factors control the amount of charge transfer from metal to the cluster, thereby affecting the number of adsorbed hydrogen molecules. This correlation between the charge transfer and storage capacity is general in nature, and can be applied to designing efficient hydrogen storage systems. Following this strategy, a search for the best metallacarborane was carried out in which Sc based monocarborane was found to be the most promising H{sub 2} sorbent material with a 9 wt.% of reversible storage at ambient pressure and temperature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Progress of a room temperature electron cyclotron resonance ion source using evaporative cooling technology at Institute of Modern Physics

A new room temperature ECR ion source, Lanzhou Electron Cyclotron Resonance ion source No. 4 (LECR4, previously named DRAGON), is under intense construction at Institute of Modern Physics. LECR4 is designed to operate with 18 GHz microwave frequency. The maximum axial magnetic fields are 2.3 T at injection and 1.3 T at extraction, and the radial field at the plasma chamber wall of 76 mm inner diameter is 1.0–1.2 T. One of the unique features for LECR4 is that its axial solenoids are winded with solid square copper wires which are immersed in a kind of special evaporative cooling medium for cooling purpose. Till now, a prototype of the cooling system has been successfully constructed and tested, which has demonstrated that the cooling efficiency of the designed system could meet the requirements of LECR4 under the routine operation conditions. All the main components of the ion source have been completed. Assembly and commissioning is ongoing. The latest developments and test results will be presented in this paper.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure

Epitaxial thin films of room-temperature ferrimagnetic (Fe,Ge){sub 3}O{sub 4} were fabricated using pulsed laser deposition. Films with a single-phase spinel structure were grown under high oxygen pressures (0.01–0.6 Pa). The carrier transport across (Fe,Ge){sub 3}O{sub 4}/Nb:SrTiO{sub 3} interface was studied to estimate the spin polarization of (Fe, Ge){sub 3}O{sub 4}. Current–voltage curves of Fe{sub 2.8}Ge{sub 0.2}O{sub 4}/Nb:SrTiO{sub 3} junction showed rectifying behavior even at 300 K whereas Fe{sub 3}O{sub 4}/Nb:SrTiO{sub 3} junction showed ohmic behavior. Calculations based on a model for a Schottky contact with a ferromagnetic component yielded a spin polarization of 0.50 at 300 K for Fe{sub 2.8}Ge{sub 0.2}O{sub 4}, indicating its potential as a promising spin injector.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Room-temperature perpendicular magnetic anisotropy of MgO/Fe/MgO ultrathin films

We used the anomalous Hall effect to study the magnetic properties of MgO/Fe(t)/MgO(001) structures in which the Fe thickness t ranged from 4 Å to 14 Å. For the iron deposited at 140 K, we obtained perpendicular magnetization at room temperature below the critical thickness of t{sub c} = (9 ± 1) Å. In the vicinity of t{sub c}, the easy magnetization axis switched from an out-of-plane orientation to an in-plane orientation, and the observed spin-reorientation transition was considered in terms of the competition among different anisotropies. The perpendicular magnetization direction was attributed to magnetoelastic anisotropy. Finally, the temperature-dependent spin-reorientation transition was analyzed for Fe thicknesses close to t{sub c}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

High resolution InSb quantum well ballistic nanosensors for room temperature applications

We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Systematic study of polycrystalline flow during tension test of sheet 304 austenitic stainless steel at room temperature

By systematic study the mapping of polycrystalline flow of sheet 304 austenitic stainless steel (ASS) during tension test at constant crosshead velocity at room temperature was obtained. The main results establish that the trajectory of crystals in the polycrystalline spatially extended system (PCSES), during irreversible deformation process obey a hyperbolic motion. Where, the ratio between the expansion velocity of the field and the velocity of the field source is not constant and the field lines of such trajectory of crystals become curved, this accelerated motion is called a hyperbolic motion. Such behavior is assisted by dislocations dynamics and self-accommodation process between crystals in the PCSES. Furthermore, by applying the quantum mechanics and relativistic model proposed by Muñoz-Andrade, the activation energy for polycrystalline flow during the tension test of 304 ASS was calculated for each instant in a global form. In conclusion was established that the mapping of the polycrystalline flow is fundamental to describe in an integral way the phenomenology and mechanics of irreversible deformation processes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room-temperature ferromagnetism in hydrogenated ZnO nanoparticles

The effect of hydrogen doping on the magnetic properties of ZnO nanoparticles was investigated. Hydrogen was incorporated by annealing under 5% H{sub 2} in Ar ambient at 700 °C. Room-temperature ferromagnetism was induced in hydrogenated ZnO nanoparticles, and the observed ferromagnetism could be switched between “on” and “off” states through hydrogen annealing and oxygen annealing process, respectively. It was found that Zn vacancy and OH bonding complex (V{sub Zn} + OH) was crucial to the observed ferromagnetism by using the X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis. Based on first-principles calculations, V{sub Zn} + OH was favorable to be presented due to the low formation energy. Meanwhile, this configuration could lead to a magnetic moment of 0.57 μ{sub B}. The Raman and photoluminescence measurements excluded the possibility of oxygen vacancy as the origin of the ferromagnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

Blue photoluminescence (PL) of 6H-SiC irradiated by an ultraviolet laser can be observed at room temperature in dark condition. PL spectra with Gaussian fitting curve of the irradiated SiC show that blue luminescence band (∼440 nm) is more pronounced than other bands. The blue PL enhancement is the combined result of the improved shallow N-donor energy level and the unique surface state with Si nanocrystals and graphene/Si composite due to the effect of photon energy input by the short-wavelength laser irradiation. The study can provide a promising route towards the preparation of well-controlled blue photoluminescence material for light-emitting devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Room temperature strain rate sensitivity in precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposites

Investigation on the room temperature strain rate sensitivity using depth sensing nanoindentation is carried out on precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposite sintered using pulsed electric current sintering. Using constant load method the strain rate sensitivity values are estimated. Lower strain rate sensitivity of ∼ 3.7 × 10{sup −3} is observed and the limited strain rate sensitivity of these ceramic nanocomposites is explained in terms of cluster model. It is concluded that presence of amorphous Si-C-N(O) clusters are responsible for the limited flowability in these ceramics.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Room temperature ferromagnetism in a phthalocyanine based carbon material

We report on a simple method to fabricate a magnetic carbon material that contains nitrogen-coordinated transition metals and has a large magnetic moment. Highly chlorinated iron phthalocyanine was used as building blocks and potassium as a coupling reagent to uniformly disperse nitrogen-coordinated iron atoms on the phthalocyanine based carbon material. The iron phthalocyanine based carbon material exhibits ferromagnetic properties at room temperature and the ferromagnetic phase transition occurs at T{sub c} = 490 ± 10 K. Transmission electron microscopy observation, X-ray diffraction analysis, and the temperature dependence of magnetization suggest that the phthalocyanine molecules form three-dimensional random networks in the iron phthalocyanine based carbon material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Preparation of room temperature terahertz detector with lithium tantalate crystal and thin film

Research on room temperature terahertz (THz) detector is essential for promoting the application of THz science and technology. Both lithium tantalate crystal (LiTaO{sub 3}) and lithium tantalate thin film were used to fabricate the THz detector in this paper. Polishing process were used to reduce the thickness of LiTaO{sub 3} crystal slice by chemical mechanical polishing techniques and an improved sol-gel process was used to obtain high concentration LiTaO{sub 3} precursor solution to fabricate LiTaO{sub 3} thin film. Three dimension models of two THz detectors were set up and the temperature increasing map of two devices were simulated using finite element method. The lowest noise equivalent power value for terahertz detector using pyroelectric material reaches 6.8 × 10{sup −9} W at 30 Hz operating frequency, which is suitable for THz imaging application.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Room-temperature mid-infrared “M”-type GaAsSb/InGaAs quantum well lasers on InP substrate

We have demonstrated experimentally the InP-based “M”-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234 W/cm{sup 2} and 20.5 cm{sup −1}, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of “M”-type QW laser was superior to the inverse “W”-type one due to its thinner barrier for holes. Further improvement of the “M”-type QW structure could lead to a cost-effective mid-infrared light source.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn{sub 0.97}Al{sub 0.03}O, 463 K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503 K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room-temperature ferromagnetism and optical properties in Mg-doped TiO{sub 2}: A density functional theory investigation

The magnetic and optical properties of Mg-doped anatase TiO{sub 2} have been theoretically investigated using the LDA+U method. The total induced moments are about 2 μ{sub B}, which mainly localize on the nearest apical oxygen atoms. Moreover, the hole-induced interactions indicate that the magnetic moments prefer to the ferromagnetic coupling with the antiferromagnetic state lying 1160 meV higher in energy. This implies that the ferromagnetic state can be stable against thermal fluctuations up to room temperature. Additionally, the Mg doping is able to enhance the absorption efficiency of solar spectrum, especially in the near-infrared light region, which origins from the isolated O 2p states above the valence-band maximum rather than the effect of band-gap narrowing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

36 MATERIALS SCIENCE↗