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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Electrode material–ionic liquid coupling for electrochemical energy storage

The development of new electrolyte and electrode designs and compositions has led to advances in electrochemical energy-storage (EES) devices over the past decade. However, focusing on either the electrode or electrolyte separately is insufficient for developing safer and more efficient EES devices in various working environments, as the energy-storage ability is determined by the ion arrangement and charge and/or electron transfer at the electrode–electrolyte interface. Here, we assess the fundamental physicochemical and electrochemical properties at the electrode–electrolyte interfaces in Li-ion batteries and supercapacitors using safe and electrochemically stable ionic-liquid electrolytes. Key reactions and interactions at the electrode–electrolyte interface, as well as geometric constraints and temperature effects, are highlighted. Building on the fundamental understanding of interfacial processes, we suggest potential strategies for designing stable and efficient ionic-liquid-based EES devices with emerging electrode materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Conceptual Design and Performance Considerations for Superconducting Magnets in the Material Plasma Exposure eXperiment

An important step toward the advent of nuclear fusion as a future power source is the development of plasmafacing materials that can function as designed for a long period of time. While ITER and other devices including Wendelstein 7-X and the Joint European Torus will provide insight into divertor and first wall performance, a dedicated device to advance the understanding of material performance in the representative plasma environments is needed. The Material Plasma Exposure eXperiment has been proposed as a linear plasma device to generate and to direct fusion reactor-like plasma energy and particle flux at the target materials with electron temperatures of 1-15 eV and electron densities of 10 20 -10 21 m -3 . Given that the requirements for radio frequency (RF) heating on-axis field are no greater than 2.5 T and the warm bore diameters must be between 60 cm and 1.5 m, the conceptual design was developed for the experiments on a set of superconducting magnets carried out using commercially available NbTi superconductors. This conceptual design evaluated the cryogenic heat loads, mechanical loads, and quench protection to ensure that the current design is compatible with current technologies. In addition, an alternative evaluation of this design relative to ReBCO high-temperature superconducting magnets determined the conditions under which these technologies could be advantageous.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Thermal annealing is a widely used strategy to enhance semiconductor device performance. However, the process is complex for multi-material multi-layered semiconductor devices, where thermoelastic stresses from lattice constant and thermal expansion coefficient mismatch may create more defects than those annealed. We propose an alternate low temperature annealing technique, which utilizes the electron wind force (EWF) induced by small duty cycle high density pulsed current. To demonstrate its effectiveness, we intentionally degrade AlGaN/GaN high electron mobility transistors (HEMTs) with accelerated OFF-state stressing to increase ON-resistance ∼182.08% and reduce drain saturation current ∼85.82% of pristine condition at a gate voltage of 0 V. We then performed the EWF annealing to recover the corresponding values back to ∼122.21% and ∼93.10%, respectively. The peak transconductance, degraded to ∼76.58% of pristine at the drain voltage of 3 V, was also recovered back to ∼92.38%. This recovery of previously degraded transport properties is attributed to approximately 80% recovery of carrier mobility, which occurs during EWF annealing. We performed synchrotron differential aperture x-ray microscopy measurements to correlate these annealing effects with the lattice structural changes. We found a reduction of lattice plane spacing of (001) planes and stress within the GaN layer under the gate region after EWF annealing, suggesting a corresponding decrease in defect density. Application of this low-temperature annealing technique for in-operando recovery of degraded electronic devices is discussed.

Physics↗
DOE OSTI2021

Advances and opportunities in materials science for scalable quantum computing

We report that by harnessing unique quantum mechanical phenomena, such as superposition and entanglement, quantum computers offer the possibility to drastically outperform classical computers for certain classes of problems. The realization of this potential, however, presents a substantial challenge, because noise and imperfections associated with the materials used to fabricate devices can obscure the delicate quantum mechanical effects that enable quantum computing. Hence, progress in synthesis, characterization, and modeling of materials for quantum computing have driven many exciting advances in recent years and will become increasingly important in the years to come. As progressively more complex, multi-qubit systems come online, and as significant government and industrial investment drives research forward, new challenges and opportunities for materials science continue to emerge. The articles in this issue survey the current state of materials science progress and obstacles for some leading quantum computing platforms; opportunities for deeper involvement by materials scientists abound. Ultimate realization of the full potential of quantum computers will require a multidisciplinary effort spanning many traditional areas of expertise.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Space Resources and Space Settlements

This publication contains the technical papers from the five task groups that took part in the 1977 Ames Summer Study on Space Settlements and Industrialization Using Nonterrestrial Materials. The study was sponsored by the following NASA Headquarters organizations: Office of Space Science, Office of Aeronautics and Space Technology, and Office of Space Transportation Systems. The NASA Ames Research Center hosted the study and provided administrative support through its Life Sciences Directorate. Expert assistance in the many aspects of the study came from NASA Headquarters, NASA centers, universities, industry, and from individual consultants. This summer study was the largest and most comprehensive investigation of space manufacturing and habitation to date; forty senior research workers and ten students participated. The six-week study was preceded by several months of planning and preparation, and was followed by extensive work on manuscript checking, review, and assembly. The study topics reflected the research areas requiring the most intensive attention as ofrnid-1977; they were: Group I: Regenerative life-support systems and controlled environment agriculture. Group II: Parametric studies of efficient habitats in space. Time and cost analysis of a space manufacturing program plan. Group III: Detection and analysis of special classes of asteroids suitable as material resources for space manufacturing; studies of retrieval missions. Group IV: Electromagnetic mass drivers for use as interorbital engines, as devices to launch lunar material into space, and as tugs for the retrieval of asteroidal material. Group V: Chemical processing of non terrestrial material in space; manufacture of metals and glass fibers, beneficiation, and design of processing plants. These five task groups each produced two or more technical papers, signed by the contributing members. The papers were subjected to independent peer review by scientists not connected with the study. During the course of the study, frequent formal and informal exchanges of information occurred between task groups, so that the entire effort evolved in a coherent fashion and was directed toward common goals. However, each group remained responsible for the choice of its topics and for its conclusions. A listing of all the participants is given on pages vii-x. It would be inappropriate for me to single out particular people or groups for special mention, since all involved applied their skills with dedication and enthusiasm. Instead, I thank everyone for their contributions to the success of the study, and also for making it a united and warmly cooperative personal experience.

John Billingham↗
NASA NTRS1982

Growth of diamondlike films for power applications

Diamond has a high thermal conductivity (approximately 5 times that of copper) and is an ideal heat sink material for high power semiconductor devices as well as being of interest as a semiconductor material. Numerous vacuum deposition processes are being evaluated by NASA-LeRC which have demonstrated the capability to deposit carbon films having some of the properties of diamond. Current activities include Investigation of high deposition rate vacuum processes suitable for synthesis of diamondlike carbon films. The results of recent film characterization tests are reported.

Banks, B. A.↗
NASA NTRS2000

Development of Highly Fluorescent Materials Based on Thiophenylimidazole Dyes

Organic fluorescent materials are expected to find many potential applications in optical devices and photo-functionalized materials. Although many investigations have been focused on heterocyclic compounds such as coumarins, bipyridines, rhodamines, and pyrrole derivatives, little is known for fluorescent imidazole materials. We discovered that one particular class of imidazole derivatives is highly fluorescent. A series of monomeric and polymeric based fluorescent dyes were prepared containing a thiophene unit at the second position of the imidazole ring. Dependence of fluorescence efficiency on parameters such as solvent polarity and substituent groups has been investigated. It was found that a formyl group at the 2-position of the thiophene ring dramatically enhance fluorescence properties. Ion recognition probes indicated their potential as sensor materials. These fluorophores have flexibility for introduction of versatile substituent groups that could improve the fluorescence efficiency and sensor properties.

Santos, Javier↗
DOE OSTI2024

Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material’s effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10 –3 to 10 3 cm 2 V –1 s –1 and lifetimes varying between 10 –9 and 10 –3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.

14 SOLAR ENERGY↗
DOE OSTI2020

Epitaxial growth of Bi 2 Se 3 in the (0015) orientation on GaAs (001)

Here we present that materials with van der Waals bonding show exotic physics and may have applications in a variety of areas including new optoelectronic devices, spintronic devices, and as quantum materials. To date, control over the morphology and surface orientation of thin films of these materials without substrate pretreatment has been difficult. In this paper, the authors report the growth of Bi 2 Se 3 on GaAs (001) substrates. By controlling the growth conditions and adatom mobility, the authors are able to obtain epitaxial growth in the (0015) orientation without substrate prepatterning. Although the growth window is small, this demonstration opens the door for future control of the orientation of van der Waals materials through control of parameters during growth and via interaction with the substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel $1 mm^2$ superconducting microwire single photon detectors (SMSPDs) with $1\,\mathrm{\mu m}$-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all 8 pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity published to date, and the first report of an SMSPD array. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with $cm^2$-scale active area and beyond.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2008

Wafer bonded epitaxial templates for silicon heterostructures

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Atwater, Harry A., Jr.↗
DOE OSTI2023

Materials for stabilizing semiconductors and methods of making the same

The present disclosure relates to a device that includes a first layer having an active material and a stabilizing material, where the active material includes a semiconductor, the stabilizing material includes at least one of an oligomer, an elastomer, a polymer, and/or a resin, and the stabilizing material provides to the device an improved performance metric compared to a device constructed of the first layer but constructed of only the active material (i.e., in the absence of the stabilizing material).

Zhu, Kai↗
DOE OSTI2022

Highly stretchable organic electrochemical transistors with strain-resistant performance

Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30-140% tensional strain, limited only by metal contact fatigue. In this work, the prestretched honeycomb semiconductor channel of donor-acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10(4) stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness. Highly stretchable organic electrochemical transistors with stable charge transport under severe tensional strains are demonstrated using a honeycomb semiconducting polymer morphology, thereby enabling controllable signal output for diverse stretchable bioelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Femtosecond stimulated Raman spectro-microscopy for probing chemical reaction dynamics in solid-state materials

Femtosecond stimulated Raman spectroscopy (FSRS) is a chemically specific vibrational technique that has the ability to follow structural dynamics during photoinduced processes such as charge transfer on the ultrafast timescale. FSRS has a strong background in following structural dynamics and elucidating chemical mechanisms; however, its use with solid-state materials has been limited. As photovoltaic and electronic devices rely on solid-state materials, having the ability to track the evolving dynamics during their charge transfer and transport processes is crucial. Following the structural dynamics in these solid-state materials will lead to the identification of specific chemical structures responsible for various photoinduced charge transfer reactions, leading to a greater understanding of the structure–function relationships needed to improve upon current technologies. Furthermore, isolating the specific nuclear motions and molecular structures that drive a desired physical process will provide a chemical blueprint, leading to the rational design and fabrication of efficient electronic and photovoltaic devices. In this perspective, we discuss technical challenges and experimental developments that have facilitated the use of FSRS with solid-state samples, explore previous studies that have identified structure–function relationships in charge transfer reactions, and analyze the future developments that will broaden and advance the field.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Multiscale electric-field imaging of polarization vortex structures in PbTiO 3 /SrTiO 3 superlattices

In ferroelectric heterostructures, the interaction between intrinsic polarization and the electric field generates a rich set of localized electrical properties. The local electric field is determined by several connected factors, including the charge distribution of individual unit cells, the interfacial electromechanical boundary conditions, and chemical composition of the interfaces. However, especially in ferroelectric perovskites, a complete description of the local electric field across micro-, nano-, and atomic-length scales is missing. Here, by applying four-dimensional scanning transmission electron microscopy (4D STEM) with multiple probe sizes matching the size of structural features, we directly image the electric field of polarization vortices in (PbTiO 3 ) 16 /(SrTiO 3 ) 16 superlattices and reveal different electric field configurations corresponding to the atomic scale electronic ordering and the nanoscale boundary conditions. The separability of two different fields probed by 4D STEM offers the possibility to reveal how each contributes to the electronic properties of the film.

36 MATERIALS SCIENCE↗
NASA NTRS2011

High-Temperature Smart Structures for Engine Noise Reduction and Performance Enhancement

One of key NASA goals is to develop and integrate noise reduction technology to enable unrestricted air transportation service to all communities. One of the technical priorities of this activity has been to account for and reduce noise via propulsion/airframe interactions, identifying advanced concepts to be integrated with the airframe to mitigate these noise-producing mechanisms. An adaptive geometry chevron using embedded smart structures technology offers the possibility of maximizing engine performance while retaining and possibly enhancing the favorable noise characteristics of current designs. New high-temperature shape memory alloy (HTSMA) materials technology enables the devices to operate in both low-temperature (fan) and high-temperature (core) exhaust flows. Chevron-equipped engines have demonstrated reduced noise in testing and operational use. It is desirable to have the noise benefits of chevrons in takeoff/landing conditions, but have them deployed into a minimum drag position for cruise flight. The central feature of the innovation was building on rapidly maturing HTSMA technology to implement a next-generation aircraft noise mitigation system centered on adaptive chevron flow control surfaces. In general, SMA-actuated devices have the potential to enhance the demonstrated noise reduction effectiveness of chevron systems while eliminating the associated performance penalty. The use of structurally integrated smart devices will minimize the mechanical and subsystem complexity of this implementation. The central innovations of the effort entail the modification of prior chevron designs to include a small cut that relaxes structural stiffness without compromising the desired flow characteristics over the surface; the reorientation of SMA actuation devices to apply forces to deflect the chevron tip, exploiting this relaxed stiffness; and the use of high-temperature SMA (HTSMA) materials to enable operation in the demanding core chevron environment. The overall conclusion of these design studies was that the cut chevron concept is a critical enabling step in bringing the variable geometry core chevron within reach. The presence of the cut may be aerodynamically undesirable in some respects, but it is present only when the chevron is not immersed in the core jet exhaust. When deployed, the gap closes as the chevron tip enters the high-speed, high-temperature core stream. Aeroacoustic testing and flow visualization support the contention that this cut is inconsequential to chevron performance.

Quackenbush, Todd R.↗
DOE OSTI2024

Local strain inhomogeneities during electrical triggering of a metal–insulator transition revealed by X-ray microscopy

Electrical triggering of a metal–insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a conducting matrix. When MIT triggering is driven by electrothermal effects, the temperature of the filament or barrier can be substantially higher than the rest of the material. Using X-ray microdiffraction and dark-field X-ray microscopy, we show that electrothermal MIT triggering leads to the development of an inhomogeneous strain profile across the switching device, even when the material does not undergo a pronounced, discontinuous structural transition coinciding with the MIT. Diffraction measurements further reveal evidence of unique features associated with MIT triggering including lattice distortions, tilting, and twinning, which indicate structural nonuniformity of both low- and high-resistance regions inside the switching device. Such lattice deformations do not occur under equilibrium, zero-voltage conditions, highlighting the qualitative difference between states achieved through increasing temperature and applying voltage in nonlinear electrothermal materials. Electrically induced strain, lattice distortions, and twinning could have important contributions in the MIT triggering process and drive the material into nonequilibrium states, providing an unconventional pathway to explore the phase space in strongly correlated electronic systems.

42 ENGINEERING↗
NASA NTRS2010

Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices

The present invention is directed toward devices comprising carbon nanotubes that are capable of detecting displacement, impact, stress, and/or strain in materials, methods of making such devices, methods for sensing/detecting/monitoring displacement, impact, stress, and/or strain via carbon nanotubes, and various applications for such methods and devices. The devices and methods of the present invention all rely on mechanically-induced electronic perturbations within the carbon nanotubes to detect and quantify such stress/strain. Such detection and quantification can rely on techniques which include, but are not limited to, electrical conductivity/conductance and/or resistivity/resistance detection/measurements, thermal conductivity detection/measurements, electroluminescence detection/measurements, photoluminescence detection/measurements, and combinations thereof. All such techniques rely on an understanding of how such properties change in response to mechanical stress and/or strain.

Barrera, Enrique V.↗