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At least 1,009 records · Page 56

Reliability study of opto-coupled semiconductor devices and Light Emitting Diodes (LED)

Opto-coupler and light emitting diode (LED) failure mechanisms and associated activation energies were determind from the results of environmental and accelerated lift tests of over 2,400 devices. The evaluation program included LED phototransistor opto-couplers from three sources, LED photoamplifier opto-couplers from a single source, and discrete infrared emitting LEDs from two sources. Environmental tests to evaluate device mechanical integrity included power cycling (10,000 cycles), temperature cycling (500 cycles) and a sequence of monitored shock, monitored vibration and constant acceleration. Multiple temperature operating life tests were conducted at ambient temperatures between 25 C and 200 C. Opto-couplers were operated in both the 'on' and 'off' states during life testing.

Maurer, R. C.↗

Gunn diodes and devices (bibliography for 1978-1980)

A listing of about 500 works from Soviet and foreign scientific literature on Gunn diodes and devices based on them is presented. The bibliography includes publications in which various questions pertinent to all (or several) types of semiconductor instruments in the superhigh frequency range are mentioned. A subject index is included.

Yelenskiy, Y. G.↗

Constricted double-heterojunction AlGaAs diode lasers - Structures and electrooptical characteristics

Constricted double-heterojunction (CDH) diode lasers are presented as a class of nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various CDH structures are discussed while treating such topics as liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers with positive-index lateral mode confinement provides single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C, while exhibiting light-current characteristics with second-harmonic distortions as low as -57 dB below the fundamental level. Semileaky guide CDH lasers with an asymmetric leaky cavity provide single-mode operation to 15-20 mW/facet CW, and to 50 mW/facet at 50% duty cycle.

Botez, D.↗

Improved whisker pointing technique for micron-size diode contact

Pointed phosphor-bronze whiskers are commonly used to contact micron-size Schottky barrier diodes. A process is presented which allows pointing such wire and achieving the desired cone angle and tip diameter without the use of highly undesirable chemical reagents.

Mattauch, R. J.↗

Noise equivalent circuit of a semiconductor laser diode

A small-signal model of a semiconductor laser is extended to include the effects of intrinsic noise by adding current and voltage noise sources. The current noise source represents the shot noise of carrier recombination, while the voltage noise source represents the random process of simulated emission. The usefulness of the noise equivalent circuit is demonstrated by calculating the modulation and noise characteristics of a current-driven diode as a function of bias current and frequency.

Harder, C.↗

Measurements of pressure-broadening coefficients of NO and O3 using a computerized tunable diode laser spectrometer

Foreign-gas broadening coefficients have been measured for selected lines of ozone in the 9.2 micron region and for several R-branch lines of nitric oxide in the 5.4 micron region using a computerized tunable diode laser spectrometer. The data analysis showed the importance of fitting a Lorentzian line shape out to several times the halfwidth to obtain a correct value of the broadening coefficient. The measured broadening coefficients of nitric oxide were in good agreement with those obtained by Abels and Shaw (1966). The results of the analysis of eleven lines in the v-1 band and five lines in the v-3 band of ozone show a transition-dependent broadening coefficient. The average value of the foreign-gas broadening ceofficients for the measured v-1 and v-3 lines are 0.075 and 0.073 per cm per atm, respectively.

Lundqvist, S.↗

Measurement of the dispersive and refractive indices of germanium using diode lasers

Germanium Fabry-Perot etalons are commonly used in diode laser spectroscopy to establish relative frequency calibration scales for molecular absorption spectra. Typically the channel spectrum of the etalon is recorded simultaneously with the molecular spectrum as the laser injection current is tuned linearly, and the etalon free spectral range (fringe spacing) is used to measure the frequency separations among lines in the molecular spectrum. For this purpose, the etalon free spectral range must be known for the measurement wavelength, and this in turn relies on knowledge of the etalon length and the dispersive index at this wavelength. It is pointed out that the most satisfactory approach is to measure directly the free spectral range or dispersive index of the etalon at the wavelength of interest. A description is presented of measurements of this type, performed near 7.9 and 10.1 micrometers for a 7.7-cm long germanium etalon.

Jennings, D. E.↗

Laser Diode Schlieren Photography

Laser diodes preferable to conventional lasers or incandescent lamps for Schlieren flow analysis because they are smaller, more rugged, less costly and have lower power requirements.

Franke, J. M.↗

Linewidth measurements of tunable diode lasers using heterodyne and etalon techniques

Measurements of the linewidths of Pb-salt diode lasers operating in the 8- and 9-micron region are reported. The linewidths of the 9-micron lasers were determined by conventional heterodyne techniques, while for the 8-micron lasers a new technique based on a Fabry-Perot etalon was used. The new technique avoids the complexity and limited wavelength range of the heterodyne measurements and can be used for any tunable laser. The linewidths observed varied from 0.6 to more than 500-MHz FWHM. The linewidth was found to vary dramatically from device to device, to depend strongly on junction temperature and injection current, and to be correlated with vibrations caused by operation of a closed-cycle refrigerator.

Reid, J.↗

A proposed new method for damping relaxation oscillations in laser diodes

A new concept of damping relaxation oscillations in injection laser diodes is described. This method involves the operation of the laser as a part of a bipolar transistor, and the damping is accomplished by reducing the carrier lifetime in the laser active region only at frequencies near resonance. The advantage of the proposed method is that the damping mechanism does not affect the laser operation at any other frequency range.

Katz, J.↗

High-resolution atmospheric spectroscopy using a diode laser heterodyne spectrometer

A tunable-diode-laser radiometer with a spectral resolution of 0.007/cm was used to obtain IR solar absorption spectra in the 9.1-11.1 micron region. Spectra exhibiting absorption by HNO3, CO2, O3, and H2O were obtained in a piecewise manner using emission modes from a single Pb-salt laser local oscillator. The measured spectra were compared to synthetic atmospheric spectra calculated using a line-by-line model. The results demonstrate that high-resolution IR solar absorption spectroscopy and atmospheric extinction measurements can be routinely performed over wide spectral regions using semiconductor lasers.

Hoell, J. M., Jr.↗

Diode laser heterodyne observations of silicon monoxide in sunspots - A test of three sunspot models

Absorption features from the 8 micron SiO fundamental (upsilon = 1-0) and hot bands (upsilon = 2-1) have been observed in sunspots at sub-Doppler resolution using a ground-based tunable diode laser heterodyne spectrometer. The observed line widths suggest an upper limit of 0.5 km/s for the microturbulent velocity in sunspot umbrae. Since the silicon monoxide abundance is very sensitive to sunspot temperature, the measured equivalent widths permit an unambiguous determination of the temperature-pressure relation in the upper layers of the umbral atmosphere. In the region of SiO line formation (log P sub g = 3.0-4.5), the results support the sunspot model suggested by Stellmacher and Wiehr (1970).

Glenar, D. A.↗

Ohmic contacts for laser diodes

Requirements for ohmic contacts to laser diodes are discussed, and properties of Schottky barrier tunneling contacts are reviewed. A procedure is described for measuring contact resistance on fabricated laser material without the need for specially constructed samples and contact configurations. Measurements of contact resistance and estimates of specific contact resistance are given for Ti/Pt/Au contacts to surfaces with three different doping levels. It was found that below a p-type carrier concentration of 1 x 10 to the 19th per cu cm the contact resistance is likely to be too high for good device performance. At higher doping levels, a specific contact resistance as low as 2 x 10 to the -6th ohm sq cm was obtained. Oxide stripe lasers provided with the type of contact discussed in this paper have been operated without failures for periods up to 7 years at a current density at the contact of 6-8 kA/sq cm. It appears therefore that these contacts satisfy the need for low resistance and durability and that, at the same time, they do not cause any obvious material degradation.

Ladany, I.↗

Laboratory simulation of tunable diode laser remote measurement of atmospheric gases using topographic targets

In order to test the possibility that tunable diode laser (TDL) systems using topographic targets can be applied to the measurement of a variety of gases at concentrations and distances characteristic of industrial gas leaks, a single-ended TDL system was assembled for use with selected topographic targets to detect NO2 at atmospheric pressure and NO2 and NH3 at low pressures. In both cases, the intensity distribution of radiation backscattered from selected targets was found to be heavily weighted to a specular rather than a Lambertian distribution. A sensitivity of 5 ppm-m has been demonstrated for the case of NO2.

Webster, C. R.↗

Line strength measurements using diode lasers - The nu2 band of H2S

The strengths of 94 lines in the nu2 band of H2S have been measured with an average accuracy of 3 percent using a tunable diode laser. The line strengths are determined from the peak absorption of nearly Doppler-shaped lines. A detailed error analysis of this measurement method is given. Ratios of the measured line strengths to strengths calculated assuming no vibration-rotation interactions are shown to range from as low as 0.057 to as high as 4.71.

Strow, L. L.↗

Reliability of constricted double-heterojunction AlGaAs diode lasers

Constricted double-heterojunction diode lasers have been life tested at 70 C heatsink temperature and 3-4 mW/facet in CW operation. A median life of 7800 h is obtained at 70 C, which extrapolates to 400,000 h median life at room temperature. The extrapolated mean time to failure at room temperature is in excess of 1,000,000 h. Single-longitudinal-mode CW operation is maintained after 10,000 h of accelerated aging at 70 C.

Botez, D.↗

Frequency-doubled CO2 lidar measurement and diode laser spectroscopy of atmospheric CO2

A lidar instrument based on pulsed frequency-doubled carbon-dioxide lasers has been used at 4.88 microns for remote sensing of atmospheric carbon dioxide. A tunable-diode laser spectrometer provided the high-resolution spectroscopic data on carbon-dioxide line strength and line broadening needed for an accurate differential absorption measurement. Initial field measurements are presented, and instrument improvements necessary for accurate carbon dioxide measurement are discussed.

Bufton, J. L.↗