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At least 1,009 records · Page 56

Raman spectroscopy of thermally perturbed carbon fibers: Discriminating spectral responses of modulus classes and defect types

The mechanical strength properties of carbon fibers are generally thought to be correlated with the presence of underlying atomic-level defects. These defects serve to break the underlying translational symmetry of the graphitic or graphene subunits of the fiber construction, resulting in the emergence of new Raman-active spectral features. However, historical attempts to classify the precise origin of defect contributions to the Raman spectra have been challenging because of indistinct and overlapping features in the carbon fiber Raman spectra. Further, while substantial research exists on high-temperature exposure in inert atmospheres for carbon fiber composites, comparatively less addresses microscale behaviors and Raman spectral alterations to monofilament carbon fibers exposed to high-temperature atmospheric environments. Here, we report Raman spectral responses of nine commercially available high-performance, polyacrylonitrile-based carbon fibers exposed to various atmospheric heat treatments. In this work, we introduce a model-independent characterization method, the integrated absolute difference, to quantify the spectral responses to heat treatment of different fiber modulus classes. We combine this new method with a newly reported strategy to standardize spectral fitting for carbon fibers. With this approach, we show that atomic-scale defects in the underlying fiber microstructure manifest in measurably distinct manners and have distinct responses to thermal perturbation. These combined approaches may lay the foundation for disentangling contributions from specific defects in the Raman spectra of carbon fibers.

36 MATERIALS SCIENCE↗

Native and radiation induced point defects in AlN and Sc-doped AlN

Herein, we have performed first-principles calculations to investigate the electronic structure, configurations, formation, and binding energies of native and radiation induced point defects in pristine and Sc-doped wurtzite AlN. For the native defects, the nitrogen vacancy has the lowest formation energy in p-type material while the aluminum vacancy has the lowest formation energy in n-type material which is consistent with the previous studies. Several interstitial defect structures were modeled for Al, N, and Sc atoms. The effects of charge state on their relative stability were investigated. The binding energy of Sc with point defects was calculated and found to be dependent strongly on the defect type and charge state. The results obtained are discussed in light of the possible Sc effects on the radiation damage evolution in AlN. Thus the attraction of Sc atom to N vacancy and both Al and N interstitials reduces their mobility and increases Frenkel pair recombination distance.

36 MATERIALS SCIENCE↗

Assessing Carrier Mobility, Dopability, and Defect Tolerance in the Chalcogenide Perovskite Ba Zr S 3

The chalcogenide perovskite Ba Zr S 3 has attracted much attention as a promising solar absorber for thin-film photovoltaics. Here we use first-principles calculations to evaluate its carrier transport and defect properties. We find that Ba Zr S 3 has a phonon-limited electron mobility of 37 cm 2 / V s, which is comparable to that in halide perovskites, but lower hole mobility of 11 cm 2 / V s. The defect computations indicate that Ba Zr S 3 is intrinsically n -type due to shallow sulfur vacancies, but that strong compensation by sulfur vacancies will prevent attempts to make it p -type. We also establish that Ba Zr S 3 shows some degree of defect tolerance, presenting only few low formation energy, deep intrinsic defects. Among the deep defects, sulfur interstitials are the dominant nonradiative recombination centers but exhibit a moderate capture coefficient. Our work highlights the material’s intrinsic limitations in carrier mobility and p -type doping, and suggests focusing on suppressing the formation of sulfur interstitials to achieve longer carrier lifetime. Published by the American Physical Society 2024

Yuan, Zhenkun (ORCID:0000000272005973)↗

Point Defects in CdTe Bulk Single Crystals Grown in Cd-Rich Conditions

CdTe materials tend to grow in a Te-rich stoichiometry due to the higher vapor pressure of Cd over Te, making the material p-type. Growing the crystal in an extra Cd environment helps to restore the stoichiometry and changes the material from p-type to semi-insulating or n-type conductivity. The amount of Cd and Te vacancies is expected to change with variations of the stoichiometry. To better understand the effect of stoichiometry on intrinsic defects, we grew a CdTe crystal boule in a Cd-rich conditions using the Vertical Bridgman technique. The electrical properties and defect structures of the resulting sample were compared to a Te-rich sample grown under similar conditions. The point defects were characterized by thermoelectric effect spectroscopy. Analysis suggests that five types of defects were common to both growths whereas two types of defects are associated with the growth stoichiometry.

14 SOLAR ENERGY↗

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗

Infrared thermography NDT for in-situ defect detection in sandwich composite panel manufacturing

Composite manufacturing presents numerous challenges, as defects can arise from various sources throughout the process. In sandwich composite structures, the integration of a foam core introduces additional complexity and increases the likelihood of defect formation like delamination. To mitigate these issues and reduce the risk of future structural failures, in-situ monitoring during manufacturing is essential. This study investigates infrared (IR) thermography as a non-destructive technique for detecting manufacturing defects in foam-core sandwich composite panels under thermally excited conditions representative of in-situ processing. A stationary FLIR A8590 IR camera (640 × 512 pixels, 30Hz, 17mm lens, 9 ft stand-off distance) was used to monitor prefabricated panels subjected to controlled external heating simulating compression molding and resin cure exotherm. Interlaminar delamination defects with characteristic sizes ranging from 0.25 × 0.25in² to 5 × 5in² produced measurable surface temperature depressions of approximately 4–10°C during transient cooling, exceeding the effective noise floor of the camera by more than two standard deviations. Thicker laminates exhibited prolonged defect detectability windows due to increased thermal diffusion time. In contrast, embedded Teflon inclusions generated weak thermal contrasts of ≤ 3°C, approaching the measurement noise floor, due to limited thermal property contrast with the surrounding glass fiber composite. These results establish quantitative detectability limits for stationary thermographic inspection of sandwich composite panels under manufacturing-representative thermal cycles.

Barakat, Abdallah [ORNL] (ORCID:0000000296141398)↗

Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination

Low-cost solution-based synthesis of metal halide perovskites (MHPs) invariably introduces defects in the system, which could form Shockley-Read-Hall (SRH) electron-hole recombination centers detrimental to solar conversion efficiency. Here, we investigate the nonradiative recombination processes due to native point defects in methylammonium lead halide (MAPbI 3 ) perovskites using ab initio nonadiabatic molecular dynamics within surface-hopping framework. Regardless of whether the defects introduce a shallow or deep band state, we find that charge recombination in MAPbI 3 is not enhanced, contrary to predictions from SRH theory. We demonstrate that this strong tolerance against defects, and hence the breakdown of SRH, arises because the photogenerated carriers are only coupled with low-frequency phonons and electron and hole states overlap weakly. Both factors appreciably decrease the nonadiabatic coupling. We argue that the soft nature of the inorganic lattice with small bulk modulus is key for defect tolerance, and hence, the findings are general to other MHPs.

Science & Technology - Other Topics↗

Electrically driven photon emission from individual atomic defects in monolayer WS 2

Quantum dot–like single-photon sources in transition metal dichalcogenides (TMDs) exhibit appealing quantum optical properties but lack a well-defined atomic structure and are subject to large spectral variability. Here, we demonstrate electrically stimulated photon emission from individual atomic defects in monolayer WS 2 and directly correlate the emission with the local atomic and electronic structure. Radiative transitions are locally excited by sequential inelastic electron tunneling from a metallic tip into selected discrete defect states in the WS 2 bandgap. Coupling to the optical far field is mediated by tip plasmons, which transduce the excess energy into a single photon. The applied tip-sample voltage determines the transition energy. Atomically resolved emission maps of individual point defects closely resemble electronic defect orbitals, the final states of the optical transitions. Inelastic charge carrier injection into localized defect states of two-dimensional materials provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.

74 ATOMIC AND MOLECULAR PHYSICS↗

Achieving giant electrostrain of above 1% in (Bi,Na)TiO 3 -based lead-free piezoelectrics via introducing oxygen-defect composition

Piezoelectric ceramics have been extensively used in actuators, where the magnitude of electrostrain is key indicator for large-stroke actuation applications. Here, we propose an innovative strategy based on defect chemistry to form a defect-engineered morphotropic phase boundary and achieve a giant strain of 1.12% in lead-free Bi 0.5 Na 0.5 TiO 3 (BNT)–based ceramics. The incorporation of the hypothetical perovskite BaAlO 2.5 with nominal oxygen defect into BNT will form strongly polarized directional defect dipoles, leading to a strong pinning effect after aging. The large asymmetrical strain is mainly attributed to two factors: The defect dipoles along crystallographic [001] direction destroy the long-range ordering of the ferroelectric and activate a reversible phase transition while promoting polarization rotation when the dipoles are aligned along the applied electric field. Our results not only demonstrate the potential application of BNT-based materials in low-frequency, large-stroke actuators but also provide a general methodology to achieve large strain.

36 MATERIALS SCIENCE↗

Constructive molecular configurations for surface-defect passivation of perovskite photovoltaics

Surface trap-mediated nonradiative charge recombination is a major limit to achieving high-efficiency metal-halide perovskite photovoltaics. The ionic character of perovskite lattice has enabled molecular defect passivation approaches through interaction between functional groups and defects. However, a lack of in-depth understanding of how the molecular configuration influences the passivation effectiveness is a challenge to rational molecule design. In this work, the chemical environment of a functional group that is activated for defect passivation was systematically investigated with theophylline, caffeine, and theobromine. When N-H and C=O were in an optimal configuration in the molecule, hydrogen-bond formation between N-H and I (iodine) assisted the primary C=O binding with the antisite Pb (lead) defect to maximize surface-defect binding. A stabilized power conversion efficiency of 22.6% of photovoltaic device was demonstrated with theophylline treatment.

14 SOLAR ENERGY↗

On classical and semiclassical properties of the Liouville theory with defects

The Lagrangian of the Liouville theory with topological defects is analyzed in detail and general solution of the corresponding defect equations of motion is found. We study the heavy and light semiclassical limits of the defect two-point function found before via the bootstrap program. We show that the heavy asymptotic limit is given by the exponential of the Liouville action with defects, evaluated on the solutions with two singular points. We demonstrate that the light asymptotic limit is given by the finite-dimensional path integral over solutions of the defect equations of motion with a vanishing energy–momentum tensor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons

Electrical properties of defects formed in n-Si(FZ) following 8 and 15 MeV proton irradiation are investigated by Hall effect measurements over the wide temperature range of T ≈ 25 to 300 K. Close attention is paid to the damaging factor of proton irradiation, leaving aside passivation effects by hydrogen. The concept of defect production and annealing processes being accepted in the literature so far needs to be reconsidered. Contrary to expectations the dominant impurity-related defects produced by MeV protons turn out to be electrically neutral in n-type material. Surprisingly, radiation acceptors appear to play a minor role. Annealing studies of irradiated samples of such complex defects as a divacancy tied to a phosphorus atom and a vacancy tied to two phosphorus atoms. The latter defect features high thermal stability. Identification of the dominant neutral donors, however, remains unclear and will require further, more detailed, studies. The electric properties of the material after proton irradiation can be completely restored at T = 800°C.

36 MATERIALS SCIENCE↗

Exploring the interaction between lithium ion and defective graphene surface using dispersion corrected DFT studies

To analyze the lithium ion interaction with realistic graphene surfaces, we carried out dispersion corrected DFT-D3 studies on graphene with common point defects and chemisorbed oxygen containing functional groups along with defect free graphene surface. Our study reveals that, the interaction between lithium ion (Li+) and graphene is mainly through the delocalized π electron of pure graphene layer. However, the oxygen containing functional groups pose high adsorption energy for lithium ion due to the Li-O ionic bond formation. Similarly, the point defect groups interact with lithium ion through possible carbon dangling bonds and/or cation-π type interactions. Overall these defect sites render a preferential site for lithium ions compared with pure graphene layer. Based on these findings, the role of graphene surface defects in lithium battery performance were discussed.

Environmental Molecular Sciences Laboratory↗

Perspectives on deterministic control of quantum point defects by scanned probes

Control over individual point defects in solid-state systems is becoming increasingly important, not only for current semiconductor industries but also for next generation quantum information science and technologies. To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which suggests the extension to hosts for quantum point defects such as diamond, silicon carbide, and hexagonal boron nitride is feasible. Here we provide a perspective on the principal challenges toward this end, and new opportunities afforded by the integration of scanned probes with optical and magnetic resonance techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quantum defects in silicon

The dataset used in the publication titled “High-throughput identification of spin-photon interfaces in silicon. Using an automated first-principles computational workflow, we construct a dataset that details simple charged defects in silicon that are relevant for spin-photon interface applications. It encompasses properties vital for quantum defect design, including charged defect stability, excitation energy (determined using the single-shot hybrid functional approach), emission brightness, electronic structures, and more. The dataset encompasses all charged defects stable within the energy gap. We emphasized the importance of defect-bound excitons as telecom band emitters and proposed promising candidates for spin-photon interfaces.

36 MATERIALS SCIENCE↗

Temperature dependence of carrier capture by defects in gallium arsenide

This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

Wampler, William R.↗

Defects and Mechanical Behavior of Plutonium [Slides]

Defects are important because they heavily influence material properties (e.g. strength, ductility, elasticity, conductivity, phase transformation temperatures (melting point), corrosion resistance, etc.). At LANL defects in plutonium are being characterized using many different methods (e.g. EXAFS, XRD, microscopy, RUS, DSC, dilatometry, density, etc.) My goal is to introduce a complimentary method of understanding defects in δ-Pu using the mechanical microscope concept. Using well-developed theories of first principles strengthening mechanisms (i.e. how defects influence strength) and carefully designed experiments, mechanical testing can compliment other defect characterization tools.

36 MATERIALS SCIENCE↗

Acoustic Wafer Defect Detection System

Researchers at Los Alamos have developed the Acoustic Wafer Defect Detection System, a technology that enables rapid diagnosis of critical defects during wafer production. This technology is capable of both efficient and accurate detection of defects in wafers, including defects that are undetectable through current optical techniques. The system identifies the wafer defects by exciting resonant vibrations in the wafers and by exciting “crack breathing” modes. These vibrations cause the crack to periodically open and close. Specific resonance characteristics, combined with acoustic signatures resulting from crack breathing, result in a technique that is highly sensitive to cracked wafers. There are minimal custom parts used to build the system, and it can be easily implemented in nearly any wafer production plant with minimal modifications. We are seeking a commercialization partner to license the technology or partner through a Cooperative Research and Development Agreement (CRADA) to develop into a usable product for commercial purposes.

42 ENGINEERING↗