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At least 1,009 records · Page 56

Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping

In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.

14 SOLAR ENERGY↗

Global ocean dimethyl sulfide climatology estimated from observations and an artificial neural network

Marine dimethyl sulfide (DMS) is important to climate due to the ability of DMS to alter Earth's radiation budget. Knowledge of the global-scale distribution, seasonal variability, and sea-to-air flux of DMS is needed in order to improve understanding of atmospheric sulfur, aerosol/cloud dynamics, and albedo. Here we examine the use of an artificial neural network (ANN) to extrapolate available DMS measurements to the global ocean and produce a global climatology with monthly temporal resolution. A global database of 82 996 ship-based DMS measurements in surface waters was used along with a suite of environmental parameters consisting of latitude–longitude coordinates, time of day, time of year, solar radiation, mixed layer depth, sea surface temperature, salinity, nitrate, phosphate, and silicate. Linear regressions of DMS against the environmental parameters show that on a global-scale mixed layer depth and solar radiation are the strongest predictors of DMS. These parameters capture ~9 % and ~7 % of the raw DMS data variance, respectively. Multilinear regression can capture more of the raw data variance (~39 %) but strongly underestimates DMS in high-concentration regions. In contrast, the artificial neural network captures ~66 % of the raw data variance in our database. Like prior climatologies our results show a strong seasonal cycle in surface ocean DMS with the highest concentrations and sea-to-air fluxes in the high-latitude summertime oceans. We estimate a lower global sea-to-air DMS flux (20.12±0.43 Tg S yr –1 ) than the prior estimate based on a map interpolation method when the same gas transfer velocity parameterization is used. Our sensitivity test results show that DMS concentration does not change unidirectionally with each of the environmental parameters, which emphasizes the interactions among these parameters. The ANN model suggests that the flux of DMS from the ocean to the atmosphere will increase with global warming. Given that larger DMS fluxes induce greater cloud albedo, this corresponds to a negative climate feedback.

54 ENVIRONMENTAL SCIENCES↗

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-doped Cadmium Telluride

A new method for in-situ Sb doping of CdTe that uses a modified vapor transport deposition system is described. This modification enables control of the Sb concentration with a pyrolysis stage to enhance the doping efficiency. CdTe:Sb films under different deposition conditions are characterized by SEM, XRD, and CV measurements for determining morphology, crystal structure, and hole concentration. Variations of the Sb dopant heater and pyrolyzer temperatures do not affect the CdTe morphology and crystal structure. However, CV measurements show that a higher dopant heater or pyrolyzer temperature leads to higher hole concentration. In this study, CdTe: Sb films achieve a hole concentration of 1016 cm-3 and 10% doping efficiency when the dopant heater is 600C and the pyrolyzer temperature is 1100C. This demonstrates a path to produce high hole concentration polycrystalline CdTe film with a low concentration of dopant-induced defect.

14 SOLAR ENERGY↗

Combinatorial Synthesis of Oxysulfides in the Lanthanum–Bismuth-Copper System

Establishing synthesis approaches for a target material constitutes a grand challenge in materials research, which is compounded with use-inspired specifications on the format of the material. Solar photochemistry using thin film materials is a promising technology for which many complex materials are being proposed, and the present work describes application of combinatorial methods to explore the synthesis of predicted La–Bi–Cu oxysulfide photocathodes, in particular alloys of LaCuOS and BiCuOS. The variation in concentration of three cations and two anions in thin film materials, and crystallization thereof, is achieved by a combination of reactive sputtering and thermal processes including reactive annealing and rapid thermal processing. Composition and structural characterization establish composition-processing-structure relationships that highlight the breadth of processing conditions required for synthesis of LaCuOS and BiCuOS. The relative irreducibility of La oxides and limited diffusion indicate the need for high temperature processing, which conflicts with the temperature limits for mitigating evaporation of Bi and S. Collectively the findings indicate that alloys of these phases will require reactive annealing protocols that are uniquely tailored to each composition, motivating advancement of dynamic processing capabilities to further automate discovery of synthesis routes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

P-type conductivity in Sn-doped Sb 2 Se 3

Abstract Antimony selenide (Sb 2 Se 3 ) is a promising absorber material for thin-film photovoltaics. However, certain areas of fundamental understanding of this material remain incomplete and this presents a barrier to further efficiency gains. In particular, recent studies have highlighted the role of majority carrier type and extrinsic doping in drastically changing the performance of high efficiency devices (Hobson et al 2020 Chem. Mater. 32 2621–30). Herein, Sn-doped Sb 2 Se 3 bulk crystals are shown to exhibit p-type conductivity using Hall effect and hot-probe measurements. The measured conductivities are higher than those achieved through native defects alone, but with a carrier density (up to 7.4 × 10 14 cm −3 ) several orders of magnitude smaller than the quantity of Sn included in the source material. Additionally, a combination of ultraviolet, x-ray and hard x-ray photoemission spectroscopies are employed to obtain a non-destructive depth profile of the valence band maximum, confirming p-type conductivity and indicating a majority carrier type inversion layer at the surface. Finally, these results are supported by density functional theory calculations of the defect formation energies in Sn-doped Sb 2 Se 3 , showing a possible limit on the carrier concentration achievable with Sn as a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in Sb 2 Se 3 and highlights avenues for further optimisation of doped Sb 2 Se 3 for solar energy devices.

36 MATERIALS SCIENCE↗

E3SMv3 ‘Nephele’ Perturbed Parameter Ensemble Value-Added Product for ENA, SGP, NSA, and Global Means

Processed output from the E3SMv3 Nephele perturbed parameter ensemble (PPE). This product contains global means of present-day (using 2010 aerosol forcings) and preindustrial (using 1850 aerosol forcings) monthly and daily global-mean quantities, as well as hourly mean quantities at the E3SMv3 model grid cell closest to the ENA, SGP, and NSA ARM sites. In this PPE, the E3SMv3 model was run for 27 months in an atmosphere-only configuration with free tropospheric winds nudged to reanalysis. Each ensemble member represents a unique combination of 25 model parameter values (in the microphysics, convective microphysics, and aerosol schemes) that were perturbed randomly and simultaneously. The E3SMv3 default configuration is included as member 0. See https://doi.org/10.22541/essoar.174907165.57104591/v1 (in review) for more information on the Nephele PPE and the perturbed parameters.

Model atmospheric temperature↗

Behavior of Na and RbF-Treated CdS/Cu(In,Ga)Se 2 Solar Cells with Stress Testing under Heat, Light, and Junction Bias

In this work, the effects of Na and RbF alkali treatment on the metastability behavior of CdS/Cu(In,Ga)Se 2 solar cells are investigated with stress factors of heat, junction bias, and illumination. Four device types with and without Na or RbF treatments are subjected to heat- and light-soaking under open- and short-circuit (OC, SC) junction bias. Low-Na devices show a higher bandgap due to increased minimum Ga content, higher recombination current, and lower open-circuit voltage (V OC ). Devices with RbF post-deposition treatment (PDT) show an improvement in net doping density ≈10 16 cm –3 , V OC , and efficiency. Heat- and light-soaking under OC junction bias provokes an increase in net carrier concentration and V OC irrespective of the alkali treatments. After SC stress, a decrease in V OC and net carrier concentration is observed, which can be stabilized by RbF-PDT. An increase in Na and oxygen concentration in CIGS is observed for baseline and low-Na devices, respectively, after OC stress. The oxygen concentration in CdS decreases after heat- and light-soaking for devices without RbF-PDT, whereas it remains unchanged for devices with RbF-PDT. The atomic concentration profiles in CIGS significantly stabilize as a function of stress with the addition of RbF-PDT.

14 SOLAR ENERGY↗

Defects in RbF - Treated Cu(InxGal-x)Se2 Solar Cells and Their Impact on Voc

Cu(In,Ga)Se2 solar cell efficiency is limited by VOC due in large part to bulk defects limiting lifetime, but alkali treatments such as RbF recover some of the VOC loss. In this work, defects in RbF-treated and untreated CIGS were quantitatively characterized using DLTS and DLOS, and three main defects were identified in each sample. The RbF-PDT resulted in a large decrease in the mid-gap trap concentration, which was accompanied by a large improvement in minority carrier lifetime. This lifetime improvement combined with a change in doping accounted for a significant portion of the VOC improvement in the RbF CIGS.

charge carrier lifetime↗

Conversion efficiency improvement of ELO GaAs solar cell, deposited on water soluble sacrificial buffer

Here, we demonstrate the improvement of power conversion efficiency of an epitaxially-lifted-off single junction GaAs solar cell deposited on a water-soluble sacrificial buffer architecture by introducing an additional germanium (Ge) interlayer between GaAs and the fluoride buffer. The epitaxial lift-off (ELO) technique has been extensively used to separate III-V device layers from their single crystal GaAs substrates. However, conventional ELO requires the use of concentrated hydrofluoric acid (HF) for extended times to etch out the sacrificial layer, subsequently degrading the surface roughness of the parent wafer. As a result, the wafer has to undergo expensive and intensive chemical mechanical polishing (CMP) processes, costing about 25% of a pristine 6-inch GaAs substrate. In our previous work, we demonstrated a method to eliminating the need for CMP post-processing by using water-assisted ELO (H 2 O-ELO). A water-soluble, 3-layer buffer architecture was developed using alkaline earth compounds. However, devices suffered low performance due to a high defect density in the GaAs active layers. A Ge interlayer was introduced to provide a more favorable surface energy for GaAs growth, which leads to an improvement of GaAs crystal quality. The Ge deposition conditions were optimized to achieve a high-quality Ge layer on triple-layer fluoride buffer. Single junction GaAs devices fabricated on Ge/(Ca,Sr)F 2 /BaF 2 /(Ca,Sr)F 2 showed improvement of solar cell performance parameters featuring increases in V oc by 23.7%, and fill factor (F.F.) by 4.9%, which results in an overall improvement of power conversion efficiency from 10.3% to 12.69%.

14 SOLAR ENERGY↗

Demonstration of Complete Recycling Processes of Reversible Epoxies Using Solar Energy Conversion

Reversible epoxies using the Diels–Alder chemistry enables recycling processes through depolymerizing the polymer at higher temperature and then repolymerizing upon cooling. Compared to conventional bulk heating, photothermal heating can save time and resource and, consequently, reduce costs to reach an elevated temperature for recycling processes of the reversible epoxies. In previous studies, self‐healing of cracks and reattachments of two broken pieces have been presented using a laser; however, recycling of a sample as a whole is not feasible by using such a point light source. Herein, complete recycling processes are demonstrated utilizing an area light source, i.e., sunlight. Reversible epoxies are incorporated with carbon black and refractory plasmonic titanium nitride nanoparticles (NPs). Under concentrated (10 times) sunlight, they can generate sufficient heat (≈140 °C) to completely liquefy, reprocess, and reshape the samples multiple times. Recycling processes are validated by evaluation of mechanical properties for each cycle. Using an integrated experimental and theoretical approach, photothermal performance is investigated in terms of the dispersion and loading of photothermal NPs in the matrix, as well as the sample thickness. In this study, an insight is provided into the design of polymer/photothermal nanomaterial composites which can be sustainably recycled using abundant solar energy.

14 SOLAR ENERGY↗

Understanding the Transport Properties of Methane–Hydrogen Mixtures under the Interior Conditions of Ice Giants

Inaccuracy in our knowledge of the transport properties of relevant mixtures under planetary interior conditions is a roadblock in predicting the observable properties of planets in our solar system and beyond. In this work, we investigate methane–hydrogen mixtures using data sets obtained from density functional theory calculations for the electronic structure, combined with molecular dynamics simulations for the ions for a wide range of pressure and temperature. Hydrogen concentration significantly affects the equation of state (EOS) but has little influence on transport properties. We provide an analytical expression to model thermal EOS and transport properties as a function of hydrogen content, with the maximum deviation observed at low P–T conditions. These insights are particularly relevant to improve the planetary models and enhance our ability to predict the properties of “ice” giants and beyond.

Methane↗

Potential-induced degradation of Cu(In,Ga)Se 2 can occur by shunting the front i-ZnO and by damaging the p-n junction

In this work we test field-relevant potential-induced degradation (PID) behavior by encapsulating laboratory Cu(In,Ga)Se 2 (CIGS) solar cells and applying +1000 V uniformly on the face of the front glass. In this configuration, we find that K-rich borosilicate glass reduces the extent of PID relative to Na-rich soda-lime glass. We also find that the standard testing protocol of stressing cells at short-circuit leads to faster PID than stressing cells at open-circuit. We characterize two types of CIGS PID: The first, front shunting PID, is driven by front-glass stress and occurs when alkali metal cations accumulate in the i-ZnO buffer, where they increase shunt conductance to reduce fill factor. The second, p-n junction PID, results from back-glass stress as alkali metal cations pile up near the CIGS surface/CdS buffer, where they reduce charge carrier concentration, open-circuit voltage, and fill factor to degrade efficiency ~160 times faster than front shunting PID.

14 SOLAR ENERGY↗

Doping Limits of Phosphorus, Arsenic, and Antimony in CdTe

Low p-type doping is a limiting factor to increase CdTe thin-film solar-cell efficiency toward the theoretical Shockley-Queisser limit of 33%. Previous calculations predict relatively high ionization energies for group-V acceptors (P, As, and Sb) and they are plagued by self-compensation, forming AX-centers, severely limiting hole concentration. However, recent experiments on CdTe single crystals indicate a much more favorable scenario, where P, As, and Sb behave as shallow acceptors. Using hybrid functional calculations, we solve this puzzle by showing that the ionization energies significantly decrease with the supercell size. When including the effects of spin-orbit coupling and extrapolating the results to the dilute limit, we find these impurities behave as hydrogenic-like shallow acceptors, and AX-centers are unstable and do not limit ptype doping. We address the differences between our results and previous theoretical predictions and show that our ionization energies predict hole concentrations that agree with recent temperature-dependent Hall measurements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Exploiting heat transfer to achieve efficient photoelectrochemical CO 2 reduction under light concentration

Photoelectrochemical (PEC) conversion of carbon dioxide into valuable chemicals and fuels represents a promising path towards combating anthropogenic CO 2 emissions. However, the limited conversion efficiencies, operation lifetimes and CO 2 utilization efficiencies of PEC devices currently prohibit their application beyond the laboratory scale. Here, a wireless device converting CO 2 and water into carbon monoxide and hydrogen at a peak solar conversion efficiency exceeding 16% under an illumination intensity of 5 suns is demonstrated. A CO/H 2 product ratio between 10–20 is measured during a 17 h stability test. Fluctuations in device performance are rigorously analyzed via deconvolution of electrochemical and photoabsorber contributions. Furthermore, it is demonstrated that beneficial heat dissipation is enabled by wireless integration of the photoabsorber and electrocatalyst components, accounting for roughly 10% of the achieved conversion efficiency, an achievement unattainable with physically separated photoabsorber and electrolyzer components.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tolerance of Perovskite Solar Cells to Targeted Proton Irradiation and Electronic Ionization Induced Healing

Mixed organic–inorganic halide perovskite solar cells (PSCs) are of interest for space photovoltaic applications due to their apparent tolerance to high-energy proton radiation. Here, the use of a more stable wide-bandgap FA0.8Cs0.2PbI2.4Br0.6Cl0.02 perovskite with thin encapsulation enables, for the first time, the detailed dependence of fluence and energy of energetic protons on device performance. Energies were chosen to provide the highest concentration of displacements within the active region, and therefore the highest amount of degradation. Not only are these devices tolerant when compared to conventional technologies, but an unexpected increase in open circuit voltage and power density is observed for increased electronic ionization when the proton energy is increased. This study aims to expand the description of the proton radiation tolerance to include not only nonionizing nuclear energy losses that are most detrimental to current technologies, but electronic ionization, which is shown to yield benefits in PSCs.

device performance↗

Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells

Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultra high efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks, on top of a full-area intrinsic amorphous silicon layer. High temperature annealing then crystallized the a-Si:H to poly Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 Ω·cm to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. Lastly, this demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.

14 SOLAR ENERGY↗

Substructure at High Speed. II. The Local Escape Velocity and Milky Way Mass with Gaia eDR3

Abstract Measuring the escape velocity of the Milky Way is critical in obtaining the mass of the Milky Way, understanding the dark matter velocity distribution, and building the dark matter density profile. In Necib & Lin, we introduced a strategy to robustly measure the escape velocity. Our approach takes into account the presence of kinematic substructures by modeling the tail of the stellar distribution with multiple components, including the stellar halo and the debris flow called the Gaia Sausage (Enceladus). In doing so, we can test the robustness of the escape velocity measurement for different definitions of the “tail” of the velocity distribution and the consistency of the data with different underlying models. In this paper, we apply this method to the Gaia eDR3 data release and find that a model with two components is preferred, although results from a single-component fit are also consistent. Based on a fit to retrograde data with two bound components to account for the relaxed halo and the Gaia Sausage, we find the escape velocity of the Milky Way at the solar position to be v esc = 445 − 8 + 25 km s −1 . A fit with a single component to the same data gives v esc = 472 − 12 + 17 km s −1 . Assuming a Navarro−Frenck−White dark matter profile, we find a Milky Way concentration of c 200 = 19 − 7 + 11 and a mass of M 200 = 4.6 − 0.8 + 1.5 × 10 11 M ⊙ , which is considerably lighter than previous measurements.

79 ASTRONOMY AND ASTROPHYSICS↗

Leafweb: Dataset in Support of Coupled Modeling of Photophysics, Photochemistry, and Biochemistry of Photosynthesis, December 2022 Release

This data set contains measurements of leaf gas exchange and Pulse-Amplitude Modulated (PAM) fluorometry of light, carbon dioxide (CO2), oxygen (O2), and temperature responses from 26 C3 photosynthetic and four C4 photosynthetic species measured by independent researchers in Canada, China, Finland, Netherlands, and United States in the field, garden, or greenhouse. Data were collected between 1987 and 2021, however data for individual species only provide coverage over a few hours to one year. Species include three lianas, three shrubs, two boreal deciduous trees, two boreal evergreen needle-leaf tree, three temperate deciduous trees, four tropical deciduous trees, three tropical evergreen trees, one C3 grass, three C4 grasses, and six crop varieties. These measurements are conducted according to standard protocols in gas exchange (Long and Bernacchi 2003) and PAM fluorometry (Baker 2008). The Scots pine (Pinus sylvestris) dataset contains one-year continuous fluorometry observations made at intervals of 10 or 30 minutes in the field under natural environments using Walz monitoring PAM. Measurements from all other 29 species include simultaneous PAM fluorometry and gas exchange observations. Among these 29 species, seven species were measured with light response curves only (i.e., light intensity varied systematically with ambient CO2 concentration controlled at a constant level, e.g., 400 ppm). All the other 22 species were measured with both the light response and CO2 response (i.e., ambient CO2 concentration varied systematically with light intensity controlled at a constant level, e.g., 1200 µmolm-2s-1). For most species, measurements were made with temperature controlled at ~ 25 degrees Celsius (C) with the exceptions of Scots pine (natural diurnal and seasonal variations), tomato cultivar Basket Vee (~ 21 degrees C), and cotton which contained temperature stress experiments (9 to 40 degrees C). All measurements were made at ambient O2 concentration except for the tomato cultivar Basket Vee and cotton which used two O2 levels (2 and 21%) and rice and tomato cultivar Growdena which used five O2 levels (2, 10, 21, 35, and 50%). This dataset supports the complete modeling of photosynthesis at the leaf scale, including photophysical, photochemical, and biochemical reactions. It will support research in the applications of remotely sensed solar induced chlorophyll fluorescence and the responses of energy dissipation pathways to environmental variations across species and climates. This dataset contains 260 data files in comma separate (.csv) format contained inside 11 compressed (*.zip) files. Additional metadata are provided: one data dictionary, a species information table, and a file-level metadata file in comma separate (.csv) format and a user guide in PDF (*.pdf) format.

air temperature↗