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At least 1,009 records · Page 56

Why natural monazite never becomes amorphous: Experimental evidence for alpha self-healing

Monazite, a common accessory rare-earth orthophosphate mineral in the continental crust widely used in U-Pb geochronology, holds promise for (U-Th)/He thermochronology and for the immobilization of Pu and minor actinides (MA) coming from spent nuclear fuel reprocessing. Previous results obtained on natural and plutonium-doped monazite have demonstrated the ability of this structure to maintain a crystalline state despite high radiation damage levels. However, the low critical temperature (180 °C), above which amorphization cannot be achieved in natural monazite under ion irradiation, does not explain this old and unsolved paradox: why do natural monazites, independent of their geological history, remain crystalline even when they did not experience any thermal event that could heal the defects? This is what the present study aims to address. Synthetic polycrystals of LaPO 4 -monazite were irradiated sequentially and simultaneously with α particles (He) and gold (Au) ions. Here, our results demonstrate experimentally for the first time in monazite, the existence of the defect recovery mechanism, called α-healing, acting in this structure due to electronic energy loss of α particles, which explains the absence of amorphization in natural monazite samples. This mechanism is critically important for monazite geo- and thermochronology and to design and predictively model the long-term behavior of ceramic matrices for nuclear waste conditioning.

36 MATERIALS SCIENCE↗

Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3 He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3 He will be very desirable. To address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron ( 10 B) and enriched lithium ( 6 Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10 -24 cm 2 ), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

This paper presents a large-scale ab initio simulation study of amorphous silicon hydride (a-Si 1-x H x ) with an emphasis on the structure and properties of the material across a range of hydrogen concentration by combining accelerated molecular dynamics (MD) simulations with first-principles density-functional calculations. The accelerated MD scheme relied on classical metadynamics, which enabled the development of 2600+ high-quality structural models of a-Si 1-x H x , with system sizes ranging from 150 to 6,000 atoms and hydrogen concentrations vary from 6 to 20 at. %. The resulting amorphous networks were found to be completely free from any coordination defects and that they all exhibited a pristine band-gap in their electronic spectrum. The microstructural properties of hydrogen distributions were examined with great emphasis on the presence of isolated and clustered environments of hydrogen atoms. The results were compared with a suite of experimental data obtained from x-ray diffraction, infrared spectroscopy, spectroscopic ellipsometry and nuclear magnetic resonance studies.

36 MATERIALS SCIENCE↗

Design and Optimization of Amorphous Based on Highly Efficient HIT Solar Cell

The objective of this paper is to improve the power conversion efficiency of HIT solar cell using amorphous materials. A high efficiency amorphous material based on two dimensional heterojunction solar cell with thin intrinsic layer is designed and simulated at the research level using Synopsys/RSOFT-Solar Cell utility. The HIT structure composed of TCO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n{sup +})/Ag is created by using of RSOFT CAD. Optical characterization of the cell is performed by Diffract MOD model based on RCWA (rigorous coupled wave analysis) algorithm. Electrical characterization of the cell is done by Solar cell utility using based on Ideal diode method. In addition, optimization of the different layer thickness in the HIT structure is executed to improve the absorption and thereby the photocurrent density. The proposed HIT solar cell structure resulted in an open circuit voltage of 0.751 V, a short circuit current density of 36.37 mA/cm{sup 2} and fill factor of 85.37% contributing to the total power conversion efficiency of 25.91% under AM1.5G. Simulation results showed that the power conversion efficiency is improved by 1.21% as compared to the reference HIT solar cell. This improvement in high efficiency is due to reduction of resistive losses, recombination losses at the hetero junction interface between intrinsic a-Si and c-Si, and optimization of the thicknesses in a-Si and c-Si layers.

14 SOLAR ENERGY↗

Growth of Highly Transparent Amorphous Carbon Films Using Beam Plasma Source

A single beam plasma source was used to deposit hydrogenated amorphous carbon (a-C:H) coatings at room temperature. Using methane source gas, a-C:H coatings were deposited at different radio frequency (RF) power to fabricate transparent and durable coatings. The film deposition rate was almost linearly proportional to the ion source power. Hydrogenated amorphous carbon films of ~100 nm thickness appeared to be highly transparent from UV to the infrared range with a transmittance of ~90% and optical bandgap of ~3.7 eV. The coatings also possess desirable mechanical properties with Young’s modulus of ~78 GPa and density of ~1.9 g/cm3. The combined material properties of high transmittance and high durability make the ion-source-deposited a-C:H coatings attractive for many applications.

36 MATERIALS SCIENCE↗

Phosphate Sorption Speciation and Precipitation Mechanisms on Amorphous Aluminum Hydroxide

Aluminum (Al) oxides are important adsorbents for phosphate in soils and sediments, and significantly limit Phosphate (P) mobility and bioavailability, but the speciation of surface-adsorbed phosphate on Al oxides remains poorly understood. Here, phosphate sorption speciation on amorphous Al hydroxide (AAH) was determined under pH 3–8 and P concentration of 0.03 mM–15 mM using various spectroscopic approaches, and phosphate precipitation mechanisms were discussed as well. AAH exhibits an extremely high phosphate sorption capacity, increasing from 3.80 mmol/g at pH 7 to 4.63 mmol/g at pH 3. Regardless of reaction pH, with increasing P sorption loading, the sorption mechanism transits from bidentate binuclear (BB) surface complexation with dP-Al of 3.12 Å to surface precipitation of analogous amorphous AlPO4 (AAP), possibly with ternary complexes, such as (≡Al-O) 2 -PO 2 -Al, as intermediate products. Additionally, the percentage of precipitated phosphate occurring in AAP linearly and positively correlates with P sorption loading. Compared to phosphate reaction with ferrihydrite, phosphate adsorbs and precipitates more readily on AAH due to the higher solubility product (K sp ) of AAH. The formation of AAP particles involves Al III release, which is promoted by phosphate adsorption, and its subsequent precipitation with phosphate at AAH surfaces or in the bulk solution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electron beam recrystallization of amorphous semiconductor materials

Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

Evans, J. C., Jr.↗

Electron tunnelling into amorphous germanium and silicon.

Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

Smith, C. W.↗

Low-temperature relaxations in amorphous polyolefins

The dynamic mechanical relaxation behavior of two series of amorphous polyolefins, was investigated from 4.2 K to the glass transition. Most of the polymers show a damping maximum or plateau in the 40 to 50 K region. Various mechanisms which have been suggested for cryogenic relaxations in amorphous polymers are considered as they might relate to the polyolefins. Two secondary relaxation processes above 80 K are distinguished. A relaxation at about 160 K (beta) in the second and third member of each series is associated with restricted blackbone motion. This process requires a certain degree of chain flexibility since it is not observed in the first member of each series. A lower temperature process (gamma) is observed in each member of the second series and is attributed to motion of the ethyl side group.

Hiltner, A.↗

Direct /TEM/ observation of the catalytic oxidation of amorphous carbon by Pd particles

The catalytic oxidation of amorphous carbon substrates by Pd particles is observed by in situ transmission electron microscopy. Various modes of selective attack of the carbon substrate in the immediate neighborhood of Pd particles are observed, which can be correlated with different degrees of particle mobility. Using amorphous substrates we have been able to demonstrate that the particle-substrate interaction is influenced by the structure of the particle. This has not previously been noted.

Moorhead, R. D.↗

Hydrogenated amorphous silicon deposited by ion-beam sputtering

Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

Lowe, V. E.↗

Optical conductivity of amorphous Ta and beta-Ta films

Tantalum films evaporated in high vacuum onto liquid-nitrogen-cooled substrates had an amorphous structure that persisted even after warming to room temperature. The optical conductivity (as well as the dc conductivity) of the amorphous films differed significantly from that of the bcc films.

Nestell, J. E., Jr.↗

Cluster adsorption on amorphous and crystalline surfaces - A molecular dynamics study of model Pt on Cu and model Pd on Pt

Molecular dynamics was used to study the structure, dispersion and short-time behavior of ten-atom clusters adsorbed onto amorphous and crystalline substrates, in which the cluster atoms differed from the substrate atoms. Two adatom-substrate model systems were chosen; one, in which the interaction energy between adatom pairs was greater than that between substrate pairs, and the other, in which the reverse was true. At relatively low temperature ranges, increased dispersion of cluster atoms occurred: (a) on the amorphous substrate as compared to the FCC(100) surface, (b) with increasing reduced temperature, and (c) with adatom-substrate interaction energy stronger than adatom-adatom interaction. Two-dimensional clusters (rafts) on the FCC(100) surface displayed migration of edge atoms only, indicating a mechanism for the cluster rotation and shape changes found in experimental studies.

Garofalini, S. H.↗

Hydrogen diffusion and electronic structure in crystalline and amorphous Ti/sub y/CuH/sub x/

Hydrogen diffusion behavior and electronic properties of crystalline TiCuHo94, Ti2CuH1.90, and Ti2CuH2.63 and amorphous a-TiCuH1.4 were studied using proton relaxation times, proton Knight shifts, and magnetic susceptibilities. Crystal structure and hydrogen site occupancy have major roles in hydrogen mobility. The density of electron states at E sub F is reduced in amorphous a-TiCuH1.4 compared to the crystalline hydrides.

Bowman, R. C., Jr.↗

Structural difference rule for amorphous alloy formation by ion mixing

A rule is formulated which establishes a sufficient condition that an amorphous binary alloy will be formed by ion mixing of multilayered samples when the two constituent metals are of different crystalline structure, regardless of their atomic sizes and electronegativities. The rule is supported by the experimental results obtained on six selected binary metal systems, as well as by the previous data reported in the literature. The amorphization mechanism is discussed in terms of the competition between two different structures resulting in frustration of the crystallization process.

Liu, B.-X.↗

NMR studies of electronic structure in crystalline and amorphous Zr2PdH/x/

The proton Knight shifts and spin-lattice relaxation times have been measured in crystalline and amorphous Ze2PdH(x). Core polarization from the Zr d-band dominates the proton hyperfine interactions. The density of Fermi level d-electron states is reduced in the amorphous phase relative to the electron density in crystalline Zr2PdH(x).

Bowman, R. C., Jr.↗

Electrical characteristics of amorphous iron-tungsten contacts on silicon

The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

Finetti, M.↗

Coaxial carbon plasma gun deposition of amorphous carbon films

A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

Sater, D. M.↗