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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Vapor-phase pillarization of MXenes for engineering hierarchical interlayer porosity

MXenes, a family of two-dimensional (2D) multilamellar materials, possess excellent thermal and electronic properties for a range of applications. Their use in heterogeneous catalysis, however, is limited by the low surface area resulting from stacked layers. Pillarization with inorganic oxides can create more open, mesoporous MXene structures, improving accessibility for guest species to diffuse, reside or react in the space between 2D layers. A previous liquid-phase pillarization method, however, involves excessive use of solvent-based precursors and multiple processing steps. Here, we report a vapor-phase pillarization (VPP) strategy to introduce pillars, exemplified by silica pillars, with high pillar precursor usage efficiency and a simplified processing workflow. The resulting silica-pillared mesoporous MXene exhibits significantly increased surface area and porosity. These textural properties can be easily tuned by the VPP synthesis conditions. When applied as a ruthenium (Ru) catalyst support for the hydrogenolysis of low-density polyethylene (LDPE), the silica-pillared MXene enabled high Ru dispersion and catalytic activity. This study highlights the potential of the VPP method for engineering mesoporous, 2D MXene materials and demonstrates the effectiveness of mesoporous MXene as a catalyst support in overcoming mass transport and active-site accessibility challenges in heterogeneous catalysis involving bulky substances, such as plastics upcycling.

Luo, Song [University of Delaware, Newark, DE (Uni↗
DOE OSTI2020

X-ray diffraction at the National Ignition Facility

We report details of an experimental platform implemented at the National Ignition Facility to obtain in situ powder diffraction data from solids dynamically compressed to extreme pressures. Thin samples are sandwiched between tamper layers and ramp compressed using a gradual increase in the drive-laser irradiance. Pressure history in the sample is determined using high-precision velocimetry measurements. Up to two independently timed pulses of x rays are produced at or near the time of peak pressure by laser illumination of thin metal foils. The quasi-monochromatic x-ray pulses have a mean wavelength selectable between 0.6 Å and 1.9 Å depending on the foil material. The diffracted signal is recorded on image plates with a typical 2 θ x-ray scattering angle uncertainty of about 0.2° and resolution of about 1°. Analytic expressions are reported for systematic corrections to 2 θ due to finite pinhole size and sample offset. A new variant of a nonlinear background subtraction algorithm is described, which has been used to observe diffraction lines at signal-to-background ratios as low as a few percent. Variations in system response over the detector area are compensated in order to obtain accurate line intensities; this system response calculation includes a new analytic approximation for image-plate sensitivity as a function of photon energy and incident angle. This experimental platform has been used up to 2 TPa (20 Mbar) to determine the crystal structure, measure the density, and evaluate the strain-induced texturing of a variety of compressed samples spanning periods 2–7 on the periodic table.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Modification of magnetocrystalline anisotropy via ion-implantation

The ability to systematically modify the magnetic properties of epitaxial La 0.7 Sr 0.3 MnO 3 thin films is demonstrated through the use of Ar + ion implantation. With increasing implant dose, a uniaxial expansion of the c-axis of the unit cell leads to a transition from in-plane toward perpendicular magnetic anisotropy. Above a critical dose of 3 × 10 13 Ar + /cm 2 , significant crystalline disorder exists leading to a decrease in the average Mn valence state and near complete suppression of magnetization. Combined with lithographic techniques, ion implantation enables the fabrication of magnetic spin textures consisting of adjacent regions with tunable magnetic anisotropy in complex oxide thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Skyrmion fluctuations at a first-order phase transition boundary

Magnetic skyrmions are topologically protected spin textures with promising prospects for applications in data storage. They can form a lattice state due to competing magnetic interactions and are commonly found in a small region of the temperature—magnetic field phase diagram. Recent work has demonstrated that these magnetic quasi-particles fluctuate at the μeV energy scale. Here, we use a coherent x-ray correlation method at an x-ray free-electron laser to investigate these fluctuations in a magnetic phase coexistence region near a first-order transition boundary where fluctuations are not expected to play a major role. Surprisingly, we find that the relaxation of the intermediate scattering function at this transition differs significantly compared to that deep in the skyrmion lattice phase. The observation of a compressed exponential behavior suggests solid-like dynamics, often associated with jamming. We assign this behavior to disorder and the phase coexistence observed in a narrow field-window near the transition, which can cause fluctuations that lead to glassy behavior.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

The electric pulses induced multi-resistance states in the hysteresis temperature range of 1 T 2 and 1 T -TaS 1.6 Se 0.4

The electric pulse-induced responses of 1T-TaS 2 and 1T-TaS 1.6 Se 0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multi-steps of the resistance are excited by electric pulses at a fixed temperature forming multi-metastable like states. Here, we propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance states or the nonvolatile resistance properties excited simply by electric pulses have profound significance for the exploration of solid-state devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Temperature-dependent anisotropic magnetoresistance and spin-torque-driven vortex dynamics in a single microdisk

Spin-orbit-torque-driven dynamics have recently gained interest in the field of magnetism due to the reduced requirement of current densities and an increase in efficiency, as well as the ease of implementation of different devices and materials. From a practical point of view, the low-frequency dynamics below 1GHz is particularly interesting since dynamics associated with magnetic domains lie in this frequency range. While spin-torque excitation of high-frequency modes has been extensively studied, the intermediate low-frequency dynamics have received less attention, although spin torques could potentially be used for both manipulation of the spin texture and the excitation of dynamics. In this paper, we demonstrate that it is possible to drive magnetic vortex dynamics in a single microdisk by spin-Hall torque at varying temperatures and relate the results to transport properties. We find that the gyrotropic mode of the core couples to the low-frequency microwave signal and produces a measurable voltage. The dynamic measurements are in agreement with magnetic transport measurements and are supported by micromagnetic simulations. Our results open the door for integrating magnetic vortex devices in spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Cherenkov-type three-dimensional breakdown behavior of the Bloch-point domain wall motion in the cylindrical nanowire

A three-dimensional breakdown behavior of the magnetic Bloch-point domain wall (BP-DW) propagation was investigated in a ferromagnetic nanowire with the variation of the external magnetic field by means of micromagnetic simulation. As magnetic field strength increases up to a threshold value, the BP-DW velocity approaches a critical phase velocity of the spontaneously emitting spin wave (SW), where a Cherenkov-type DW breakdown phenomenon is observed originating from an interaction between the spontaneously emitting SW and the BP-DW. It is found that the velocity of the BP-DW approaches a maximum value (~2000 m/s) due to the intrinsic reversal time of a BP spin texture. This suggests that although cylindrical ferromagnetic nanowires might be free from the two-dimensional Walker breakdown phenomenon, there exists a Cherenkov-type three-dimensional breakdown behavior.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Reduced coercive field in epitaxial thin film of ferroelectric wurtzite Al 0.7 Sc 0.3 N

Epitaxial ferroelectric wurtzite films exhibiting clear polarization-electric field hysteresis behavior are presented. The coercive field of this epitaxial Al 0.7 Sc 0.3 N film on the W/c-sapphire substrate is 0.4±0.3 MV cm -1 (8%) smaller than that of a conventional fiber textured film on a Pt/TiO x /SiO 2 /Si substrate, attributed to the 0.01±0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease in the coercive field most likely originate from epitaxial strain rather than the mismatch in the thermal coefficient of expansion. These results provide insight for further coercive field reduction of wurtzite ferroelectrics using epitaxial mismatch strain.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Pressure and thermal annealing effects on the photoconversion efficiency of polymer solar cells

This paper presents the results of experimental and theoretical studies of the effects of pressure and thermal annealing on the photo-conversion efficiencies (PCEs) of polymer solar cells with active layers that consist of a mixture of poly(3-hexylthiophene-2,5-diyl) and fullerene derivative (6,6)-phenyl-C 61 -butyric acid methyl ester. The PCEs of the solar cells increased from ~2.3% (for the unannealed devices) to ~3.7% for devices annealed at ~150 °C. A further increase in thermal annealing temperatures (beyond 150 °C) resulted in lower PCEs. Further improvements in the PCEs (from ~3.7% to ~5.4%) were observed with pressure application between 0 and 8 MPa. However, a decrease in PCEs was observed for pressure application beyond 8 MPa. The improved performance associated with thermal annealing is attributed to changes in the active layer microstructure and texture, which also enhance the optical absorption, mobility, and lifetime of the optically excited charge carriers. The beneficial effects of applied pressure are attributed to the decreased interfacial surface contacts that are associated with pressure application. The implications of the results are then discussed for the design and fabrication of organic solar cells with improved PCEs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tunable topological Hall effects in noncollinear antiferromagnet Mn 3 Sn/Pt bilayers

Noncollinear antiferromagnet Mn3Sn has attracted wide interest as it is a candidate for Weyl semimetal. Here, we report the observation of topological Hall like signals in Mn3Sn/Pt bilayers grown on Al 2 O 3 (0001). X-ray diffraction and scanning transmission electron microscopy results confirm the high epitaxial quality of the c-axis-oriented Mn3Sn films. The detected topological Hall resistivity shows a broad temperature range from 210 to 365 K by tuning the thickness of Mn3Sn from 3 to 15 nm. Compared with previously reported topological Hall effects in Mn3Sn at temperatures below 50 K, the observed high-temperature topological Hall signal is likely due to the stabilization of topological spin textures enabled by the strong spin–orbit coupling of the Pt overlayer and the Dzyaloshinskii–Moriya interaction at the Mn3Sn/Pt interface.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optimization of four terminal rear heterojunction GaAs on Si interdigitated back contact tandem solar cells

High-efficiency, four-terminal tandem solar cells composed of thin GaAs films mechanically stacked onto interdigitated back contact silicon solar cells with a glass interlayer are demonstrated. The optimal thickness of the absorber layer of a rear heterojunction GaAs subcell for use in four terminal tandem solar cells was studied. GaAs top cells with absorber layer thicknesses of 1.5, 1.9, 2.3, 2.8, and 3.5 µm were fabricated on glass and mechanically stacked onto interdigitated back-contact Si bottom cells. All tandem cells were found to have efficiencies above 30% under the AM1.5 G spectrum demonstrating a relatively weak sensitivity to thickness in the four-terminal configuration. We found the 2.8 µm absorber layer cell to have the highest top cell and tandem cell efficiency at 26.38% and 32.57%, respectively. Optical modeling with transfer matrix method for the planar top cell and Lambertian light trapping in the textured Si subcell, along with drift-diffusion Hovel equations, were used to show photon recycling enhancement to the effective diffusion length and VOC of the top cell as a result of the low-index glass interlayer.

14 SOLAR ENERGY↗
DOE OSTI2021

Machine learning using host/guest energy histograms to predict adsorption in metal–organic frameworks: Application to short alkanes and Xe/Kr mixtures

A machine learning (ML) methodology that uses a histogram of interaction energies has been applied to predict gas adsorption in metal–organic frameworks (MOFs) using results from atomistic grand canonical Monte Carlo (GCMC) simulations as training and test data. In this work, the method is first extended to binary mixtures of spherical species, in particular, Xe and Kr. In addition, it is shown that single-component adsorption of ethane and propane can be predicted in good agreement with GCMC simulation using a histogram of the adsorption energies felt by a methyl probe in conjunction with the random forest ML method. Here, the results for propane can be improved by including a small number of MOF textural properties as descriptors. We also discuss the most significant features, which provides physical insight into the most beneficial adsorption energy sites for a given application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Enhanced van der Waals epitaxy of germanium by out-of-plane dipole moment induced from transferred graphene on TiN/AlN multilayers

We report recent advances in 3D/2D heterostructures have opened up tremendous opportunities in building highly flexible and durable optoelectronic devices. However, the inherit lack of interfacial bonding and low surface energy of van der Waals surfaces limit the nucleation and growth of 3D materials. Enhancing wettability by providing a porous buffer is effective in growing compound semiconductors on graphene while van der Waals epitaxy of Ge remains challenging. Here, the nucleation of Ge has been significantly improved from an islanded mode to granular modes by using a TiN/AlN multilayered buffer prior to Ge/graphene integration. Highly textured Ge growth with dominating (111), (220), and (311) peaks are identified by x-ray diffraction. The microstructure of the buffer TiN/AlN demonstrates a polycrystalline quality with clean interfaces between each interlayer and the substrate. Kelvin probe force microscopy measurements along the lateral TiN/AlN interface identify a potential drop corresponding to the AlN phase. This contact potential difference between TiN and AlN is the key in generating the out-of-plane dipole moment that modifies the surface energy of the monolayer graphene, resulting in enhanced wettability of the Ge adatoms nucleated on top. Surface dipole induced nucleation of 3D semiconductor thin films on 2D materials via the proper design of buffer layer is fundamentally important to enhance the 3D/2D growth toward flexible optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Highly ordered graphite (HOPG) to hexagonal diamond (lonsdaleite) phase transition observed on picosecond time scales using ultrafast x-ray diffraction

Here, the response of rapidly compressed highly oriented pyrolytic graphite (HOPG) normal to its basal plane was investigated at a pressure of ~80 GPa. Ultrafast x-ray diffraction using ~100 fs pulses at the Materials Under Extreme Conditions sector of the Linac Coherent Light Source was used to probe the changes in crystal structure resulting from picosecond timescale compression at laser drive energies ranging from 2.5 to 250 mJ. A phase transformation from HOPG to a highly textured hexagonal diamond structure is observed at the highest energy, followed by relaxation to a still highly oriented, but distorted graphite structure following release. We observe the formation of a highly oriented lonsdaleite within 20 ps, subsequent to compression. This suggests that a diffusionless martensitic mechanism may play a fundamental role in phase transition, as speculated in an early work on this system, and more recent static studies of diamonds formed in impact events.

58 GEOSCIENCES↗
DOE OSTI2022

Experimental and theoretical examination of shock-compressed copper through the fcc to bcc to melt phase transitions

Recent studies show a face-centered cubic (fcc) to body-centered cubic (bcc) transformation along the shock Hugoniot for several metals (i.e., Cu, Au, and Ag). Here, we combine laser-shock compression of Cu foils on nanosecond timescales with in situ x-ray diffraction (XRD) to examine the microstructural changes with stress. We study the fcc phase and the phase transition from fcc to bcc (pressures greater than 180 GPa). Textural analysis of the azimuthal intensities from the XRD images is consistent with transformation into the bcc phase through the Pitsch-distortion mechanism. We use embedded atom model molecular dynamics simulations to determine the stability of the bcc phase in pressure–temperature space. Finally, our results indicate that the bcc phase is stabilized only at high temperatures and remains stable at pressures greater than 500 GPa.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Restored Passivation after Complete Removal of Front Poly-Si Between the Grid in Poly-Si/SiO2 Front/Back Cells

This work explores the use of wet chemical etching to completely remove the front poly-Si layer between grid lines of a front/back poly-Si/SiO2 passivated contact device. The purpose of the work is to provide excellent passivation under the metal grid, but to also maximize Jsc by eliminating optical absorption in the front poly-Si. We show that after a high temperature anneal to distribute carriers in the poly-Si/SiO2/c-Si interface all of the poly-Si can be removed selectively with TMAH, using the SiO2 as an etch-stop layer. The etched surface can be repassivated back to its original level with the addition of a SiNx/Al2O3 stack grown on the preserved tunnelling oxide layer followed by a short forming gas anneal. Using symmetric 100 - 200 nm intrinsically doped poly-Si/SiO2 on textured n-type wafer templates we show absolute device efficiency enhancement from 15% to 21% by increasing the Jsc by 12 mA/cm2 after removing the front poly-Si and repassivating while effectively preserving the Voc, and FF of the device. IQE values are similar to PERC devices in the short wavelength range.

etching↗
DOE OSTI2023

Effect of substrate and growth method on vanadium dioxide thin films by RF magnetron sputtering: Vanadium metal oxidation vs reactive sputtering

Vanadium dioxide (VO 2 ) undergoes a metal–insulator phase transition at ~70 °C and has attracted substantial interest for potential applications in electronics, including those in neuromorphic computing. The vanadium–oxygen system has a rather complicated phase diagram, and controlling the stoichiometry and the phase of thin films of vanadium oxides is a well-known challenge. Here, we explore the novel combination of two methods of VO 2 thin film deposition using off-axis RF magnetron sputtering on (100)- and (111)-oriented yttria-stabilized zirconia (YSZ) substrates: reactive sputtering of vanadium in an oxygen environment and sputtering of vanadium metal followed by oxidation to VO 2 . Interestingly, the reactive sputtering process on both substrate orientations yields the metastable semiconducting VO 2 (B) phase, which is structurally stabilized by the YSZ surface. The metal sputtering and oxidation process on YSZ produces mainly the equilibrium monoclinic (or M1) phase of VO 2 that exhibits a metal–insulator transition. Using this method, we obtained thin films of (010)-textured polycrystalline VO 2 (M1) that show a metal–insulator transition with an on/off ratio larger than 1000.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Prediction of hemiwicking dynamics in micropillar arrays

Dynamic hemiwicking behavior is observable in both nature and a wide range of industrial applications ranging from biomedical devices to thermal management. We present a semi-analytical modeling framework (without empirical fitting coefficients) to predict transient capillary-driven hemiwicking behavior of a liquid through a nano/microstructured surface, specifically a micropillar array. In our model framework, the liquid domain is discretized into micropillar unit cells to enable the time marching of the hemiwicking front. A simplified linear pressure drop is assumed along the hemiwicking length such that the local meniscus curvature, contact angle, and effective liquid height are determined at each time step in our transient model. This semi-analytical model is validated with experimental data from our own experiments and from published literature for different fluids. Our model predicts hemiwicking dynamics with <20% error over a broad range of micropillar geometries with height-to-pitch ratio ranging between ≈0.34 and 6.7 and diameter-to-pitch ratio in the range of ≈0.25–0.7 and without any fitting parameters. For lower diameter-to-pitch ratio data points related to sparse micropillar array arrangements, we suggest modifications to the semi-analytical model. This work sheds light on complex and dynamic solid–liquid–vapor interfacial interactions which could serve as a guide for the design of textured surfaces for wicking enhancement in multi-phase thermal and mass transport technologies and applications.

Mechanics↗