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At least 991 records · Page 55

All-optical switching in optically induced nonlinear waveguide couplers

We experimentally demonstrate all-optical vortex switching in nonlinear coupled waveguide arrays optically induced in photorefractive media. Our technique is based on multiplexing of nondiffracting Bessel beams to induce various types of waveguide configurations. Using double- and quadruple-well potentials, we demonstrate precise control over the coupling strength between waveguides, the linear and nonlinear dynamics and symmetry-breaking bifurcations of guided light, and a power-controlled optical vortex switch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Robust random number generation using steady-state emission of gain-switched laser diodes

We demonstrate robust, high-speed random number generation using interference of the steady-state emission of guaranteed random phases, obtained through gain-switching a semiconductor laser diode. Steady-state emission tolerates large temporal pulse misalignments and therefore significantly improves the interference quality. Using an 8-bit digitizer followed by a finite-impulse-response unbiasing algorithm, we achieve random number generation rates of 8 and 20 Gb/s, for laser repetition rates of 1 and 2.5 GHz, respectively, with a ±20% tolerance in the interferometer differential delay. We also report a generation rate of 80 Gb/s using partially phase-correlated short pulses. In relation to the field of quantum key distribution, our results confirm the gain-switched laser diode as a suitable light source, capable of providing phase-randomized coherent pulses at a clock rate of up to 2.5 GHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Perfect electrical switching of edge channel transport in HgTe quantum wells controlled by gate voltage

We present a proposal to realize a perfect electrical switching of topological edge-state transport in a HgTe quantum well (QW). In our device design, we place a strip-like top gate voltage in a conventional quantum-point-contact (QPC) region in the HgTe QW. The numerical calculations show that upon increasing the gate voltage, two new conductance channels are developed in the transport direction and just neighbouring the boundaries of the top gate. The quantum states in the new channels can couple with the edge states to open a gap in energy spectrum, and in turn the gap width can be adjusted by the gate voltage, indicating that switch-on/off of the edge channels can be manipulated in a controllable way. Our device can not only be considered as a development of the conventional QPC structure based on the HgTe QW but also provides a new route to realize topological electrical switchers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ∼40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

High repetition rate Q-switched radially polarized laser with a graphene-based output coupler

We demonstrate a Q-switched radially polarized all-solid-state laser by transferring a graphene film directly onto an output coupler. The laser generates Q-switched radially polarized beam (QRPB) with a pulse width of 192 ns and 2.7 W average output power. The corresponding single pulse energy is up to 16.2 μJ with a high repetition rate of 167 kHz. The M{sup 2} factor and the polarization purity are ∼2.1 and 96%, respectively. Our QRPB source is a simple and low-cost source for a variety of applications, such as industrial material processing, optical trapping, and microscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Self-induced gaseous plasma as high power microwave opening switch medium

Self-induced gaseous plasma is evaluated as active opening switch medium for pulsed high power microwave radiation. The self-induced plasma switch is investigated for N{sub 2} and Ar environments under pressure conditions ranging from 25 to 700 Torr. A multi-pass TE{sub 111} resonator is used to significantly reduce the delay time inherently associated with plasma generation. The plasma forms under the pulsed excitation of a 4 MW magnetron inside the central dielectric tube of the resonator, which isolates the inner atmospheric gas from the outer vacuum environment. The path from the power source to the load is designed such that the pulse passes through the plasma twice with a 35 ns delay between these two passes. In the first pass, initial plasma density is generated, while the second affects the transition to a highly reflective state with as much as 30 dB attenuation. Experimental data revealed that virtually zero delay time may be achieved for N{sub 2} at 25 Torr. A two-dimensional fluid model was developed to study the plasma formation times for comparison with experimental data. The delay time predicted from this model agrees well with the experimental values in the lower pressure regime (error < 25%), however, due to filamentary plasma formation at higher pressures, simulated delay times may be underestimated by as much as 50%.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Abnormal bipolar resistive switching behavior in a Pt/GaO{sub 1.3}/Pt structure

A stable and repeatable abnormal bipolar resistive switching behavior was observed in a Pt/GaO{sub 1.3}/Pt sandwich structure without an electroforming process. The low resistance state (LRS) and the high resistance state (HRS) of the device can be distinguished clearly and be switched reversibly under a train of the voltage pulses. The LRS exhibits a conduction of electron tunneling, while the HRS shows a conduction of Schottky-type. The observed phenomena are considered to be related to the migration of oxygen vacancies which changes the space charge region width of the metal/semiconductor interface and results in a different electron transport mechanism.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Tip-induced domain structures and polarization switching in ferroelectric amino acid glycine

Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and a switchable polarization at room temperature. Here, we study tip-induced domain structures and polarization switching in the smallest amino acid β-glycine, representing a broad class of non-centrosymmetric amino acids. We show that β-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of an applied voltage and pulse duration. The domain shape is dictated by polarization screening at the domain boundaries and mediated by growth defects. Thermodynamic theory is applied to explain the domain propagation induced by the AFM tip. Our findings suggest that the properties of β-glycine are controlled by the charged domain walls which in turn can be manipulated by an external bias.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Morphological analysis of GeTe in inline phase change switches

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Interfacial charge-induced polarization switching in Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} bi-layer

Detailed polarization switching behavior of an Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} (AO/PZT) structure is examined by comparing the phenomenological thermodynamic model to the experimental polarization–voltage (P-V) results. Amorphous AO films with various thicknesses (2–10 nm) were deposited on the polycrystalline 150-nm-thick PZT film. The thermodynamic calculation showed that the transition from the ferroelectric-like state to the paraelectric-like state with increasing AO thickness occurs at ∼3 nm thickness. This paraelectric-like state should have exhibited a negative capacitance effect without permanent polarization switching if no other adverse effects are involved. However, experiments showed typical ferroelectric-like hysteresis loops where the coercive voltage increased with the increasing AO thickness, which could be explained by the carrier injection through the thin AO layer and trapping of the carriers at the AO/PZT interface. The fitting of the experimental P-V loops using the thermodynamic model considering the depolarization energy effect showed that trapped charge density was ∼±0.1 Cm{sup −2} and critical electric field at the Pt electrode/AO interface, at which the carrier transport occurs, was ∼±10 MV/cm irrespective of the AO thickness. Energy band model at each electrostatic state along the P-V loop was provided to elucidate correlation between macroscopic polarization and internal charge state of the stacked films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effective photoconductivity of exfoliated black phosphorus for optoelectronic switching under 1.55 μm optical excitation

We present a microwave photoconductive switch based on exfoliated black phosphorus and strongly responding to a 1.55 μm optical excitation. According to its number of atomic layers, exfoliated black phosphorus presents unique properties for optoelectronic applications, like a tunable direct bandgap from 0.3 eV to 2 eV, strong mobilities, and strong conductivities. The switch shows a maximum ON/OFF ratio of 17 dB at 1 GHz, and 2.2 dB at 20 GHz under 1.55-μm laser excitation at 50 mW, never achieved with bidimensional materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Q-switched Erbium-doped fiber laser at 1600 nm for photoacoustic imaging application

We present a nanosecond Q-switched Erbium-doped fiber (EDF) laser system operating at 1600 nm with a tunable repetition rate from 100 kHz to 1 MHz. A compact fiber coupled, acousto-optic modulator-based EDF ring cavity was used to generate a nanosecond seed laser at 1600 nm, and a double-cladding EDF based power amplifier was applied to achieve the maximum average power of 250 mW. In addition, 12 ns laser pulses with the maximum pulse energy of 2.4 μJ were obtained at 100 kHz. Furthermore, the Stokes shift by Raman scattering over a 25 km long fiber was measured, indicating that the laser can be potentially used to generate the high repetition rate pulses at the 1.7 μm region. Finally, we detected the photoacoustic signal from a human hair at 200 kHz repetition rate with a pulse energy of 1.2 μJ, which demonstrates that a Q-switched Er-doped fiber laser can be a promising light source for the high speed functional photoacoustic imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Pulse propagation and optically controllable switch in coupled semiconductor-double-quantum-dot nanostructures

The problem of pulse propagation is theoretically investigated through a coupled semiconductor-double-quantum-dot (SDQD) nanostructure. Solving the coupled Maxwell–Bloch equations for the SDQD and field simultaneously, the dynamic control of pulse propagation through the medium is numerically explored. It is found that when all the control fields are in exact resonance with their corresponding transitions, a weak Gaussian-shaped probe pulse is transmitted through the medium nearly without any significant absorption and losses so that it can preserve its shape for quite a long propagation distance. In contrast, when one of the control fields is not in resonance with its corresponding transition, the probe pulse will be absorbed by the QD medium after a short distance. Then we consider the probe pulses with higher intensities. It is realized that an intense probe pulse experiences remarkable absorption and broadening during propagation. Finally, we demonstrate that this SDQD system can be employed as an optically controllable switch for the wave propagation to transit from an absorbing phase to a perfect transparency for the probe field. The required time for such switch is also estimated through realistic values.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Faster in-plane switching and reduced rotational viscosity characteristics in a graphene-nematic suspension

The in-plane switching (IPS) for a nematic liquid crystal (LC) was found to be considerably faster when the LC was doped with dilute concentrations of monolayer graphene flakes. Additional studies revealed that the presence of graphene reduced the rotational viscosity of the LC, permitting the nematic director to respond quicker in IPS mode on turning the electric field on. The studies were carried out with several graphene concentrations in the LC, and the experimental results coherently suggest that there exists an optimal concentration of graphene, allowing a reduction in the IPS response time and rotational viscosity in the LC. Above this optimal graphene concentration, the rotational viscosity was found to increase, and consequently, the LC no longer switched faster in IPS mode. The presence of graphene suspension was also found to decrease the LC's pretilt angle significantly due to the π-π electron stacking between the LC molecules and graphene flakes. To understand the π-π stacking interaction, the anchoring mechanism of the LC on a CVD grown monolayer graphene film on copper substrate was studied by reflected crossed polarized microscopy. Optical microphotographs revealed that the LC alignment direction depended on monolayer graphene's hexagonal crystal structure and its orientation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Challenges in materials and devices for resistive-switching-based neuromorphic computing

This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxide materials, which exhibit unique properties that emulate key functionalities needed for this application. In Sec. I, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, and a neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Sec. II, we describe the main components of a possible solid-state implementation. In Sec. III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for neuromorphic computing. In Sec. IV, we describe why transition metal oxides are promising materials for future neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Sec. V, while existing implementations are described in Sec. VI. Section VII presents applications to practical problems. We list in Sec. VIII important basic research challenges and open issues. Here, we discuss issues related to specific implementations, novel materials, devices, and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling, and integration into a neuromorphic computer may bring us closer to the development of a machine that rivals the brain.

36 MATERIALS SCIENCE↗

Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron

A laser-driven semiconductor switch (LDSS) employing silicon (Si) and gallium arsenide (GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 μs, 110 GHz gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a 532nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the laser produced 110 GHz RF pulses with a 9 ns width and >70% reflectance. Under the same conditions, a single GaAs wafer yielded 24 ns 110 GHz RF pulses with >78% reflectance. For both semiconductor materials, a higher value of reflectance was observed with increasing 110 GHz beam intensity. Using two active wafers, pulses of variable length down to 3 ns duration were created. The switch was tested at incident 110 GHz RF power levels up to 600 kW. A 1-D model is presented that agrees well with the experimentally observed temporal pulse shapes obtained with a single Si wafer. The LDSS has many potential uses in high power millimeter-wave research, including testing of high-gradient accelerator structures.

43 PARTICLE ACCELERATORS↗