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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Marine algae growth and carbon capture augmentation by antioxidant nanozymes

Large scale commercial cultivation of microalgae year-round is limited by seasonal stress conditions. The rapid growth and high CO 2 capture of the marine microalga Picochlorum celeri is largely inhibited under winter stress conditions of low temperature and high light. Herein, we demonstrated a nanotechnology approach to enhance the biomass productivity and CO 2 capture of P. celeri under abiotic stress by interfacing with antioxidant cerium oxide nanozymes (nanoceria). Antioxidant nanoceria catalytically scavenged reactive oxygen species (ROS) generated under stress conditions, reducing damage to the microalgae photosynthetic machinery in chloroplasts. Negatively charged poly-acrylic acid-coated nanoceria (PNC, 10 μM) were biocompatible in microalgae cells and colocalized with chloroplasts. In contrast, positively charged aminated nanoceria (ANC) resulted in microalgae aggregation (>50 μM) and were toxic at all concentrations tested (≥10 μM). PNC reduction of ROS levels in microalgae (78%) and superoxide levels (26%), enhanced microalgae growth (65%), photosynthetic performance (130%), and CO 2 uptake rate (380%) under low-temperature stress (15 °C) and high light (500 μmol/m 2 /s PAR) stress relative to controls without nanoceria. Nanoceria augmentation of microalgae provides a rapid and facile technology to increase algae CO 2 capture and biomass under stress conditions.

09 BIOMASS FUELS↗
DOE OSTI2014

Overview of theoretical studies of Rashba effect in polar perovskite surfaces

Here, theoretical studies with the help of first-principles electronic structure calculations and tight-binding based Hamiltonian models aimed to understand the Rashba effect in the 2D electron gas at the surfaces and interfaces of polar perovskite oxides are discussed. First-principles calculations on a slab of KTaO 3 show that the spin-splitting is orbital dependent and is greatly suppressed by the lattice relaxation close to the surface. However, the electron gas is amenable to tuning by external potentials perpendicular to the surface and can be used to control Rashba splitting. Construction of a minimal model Hamiltonian to study d orbitals under uniform electric field is explained. The potential introduces new matrix elements between orbitals by breaking the symmetry and distorting the lattice. When coupled with spin orbit interaction, this results in lifting the spin degeneracy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Magnetic-field-induced synthesis of Fe{sub 3}O{sub 4} nanorods by a gas–liquid interfacial process: Microstructure control, magnetic and photocatalytic properties

Highlights: • Fe{sub 3}O{sub 4} nanorods were synthesized via a MFI gas–liquid interfacial route. • The morphology of the Fe{sub 3}O{sub 4} nanoparticle can be changed during its growth process. • MF render Fe{sub 3}O{sub 4} nanorods higher degree of crystallinity and better magnetic property. - Abstract: In this paper, we designed a magnetic field (MF) induced gas–liquid interface route to synthesize magnetic Fe{sub 3}O{sub 4} nanorods (NRs). The results showed that the MF can significantly affect the morphology of the particles. In this original method, only relatively inexpensive and environmental chemicals were used. The structure and morphology of the Fe{sub 3}O{sub 4} NRs were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and vibrating sample magnetometry technique. The crystal growth mechanisms in the magnetic field induced process were expounded in detail. The as-synthesized Fe{sub 3}O{sub 4} NRs were successfully used as a catalytic carrier for the photo degradation of phenol.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Evolution of Ni-Mo/MgO during catalytic methane pyrolysis to produce base-growth nanotubes

Catalytic pyrolysis of methane is a promising approach for affordable hydrogen production without CO 2 emissions. While this process is thermodynamically appealing compared to steam reforming, the high stability of methane requires severe conditions, making catalyst stability challenging. Here, we report the behavior of a highly promising Ni-Mo/MgO catalyst, which greatly outperforms its Ni/MgO, Mo/MgO, and Ni-Mo/SiO 2 counterparts at atmospheric pressure. At 800°C, nearly 229 g of carbon nanotubes per gram of Ni are produced. We propose that this superior performance results from the phase evolution of the catalyst, which exsolves stable nickel catalyst particles under reaction conditions. We further reveal that molybdenum carbide formation reduces sintering and adheres the active catalytic particles to the support throughout the reaction, enabling catalyst reuse. Several characterization techniques (same-spot TEM, XPS, XRD, and Raman) are employed to examine catalyst morphology at every step, fostering a deeper understanding of its catalytic activity and stability.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Short-Range Mechanisms in the Creation of a ZnO/InGaAs Interface

Here we perform quantitative analysis of the X-ray absorption data taken in situ during the earliest cycles of the ZnO atomic layer deposition on atomically flat InGaAs (001) surfaces. As deposition progresses, we observe a transition from an amorphous structure to a nanocrystalline one. The former retains much of the characteristics of a ZnO crystal in the Zn coordination shell, while the latter shows atomic ordering up to at least the third neighbor shell of Zn atoms, despite the absence of Bragg X-ray diffraction peaks. We show that the different chemical preparation of the substrate surface affects the ZnO local structure and that, counterintuitively, a stronger short-range order is obtained in the nanostructures characterized by lower local order at the interface. We propose a model that accounts for these findings.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Atomically precise lateral modulation of a two-dimensional electron liquid in anatase TiO 2 thin films

Engineering the electronic band structure of two-dimensional electron liquids (2DELs) confined at the surface or interface of transition metal oxides is key to unlocking their full potential. Here we describe a new approach to tailoring the electronic structure of an oxide surface 2DEL demonstrating the lateral modulation of electronic states with atomic scale precision on an unprecedented length scale comparable to the Fermi wavelength. To this end, we use pulsed laser deposition to grow anatase TiO 2 films terminated by a (1 x 4) in-plane surface reconstruction. Employing photo-stimulated chemical surface doping we induce 2DELs with tunable carrier densities that are confined within a few TiO 2 layers below the surface. Subsequent in situ angle resolved photoemission experiments demonstrate that the (1 x 4) surface reconstruction provides a periodic lateral perturbation of the electron liquid. Furthermore, this causes strong backfolding of the electronic bands, opening of unidirectional gaps and a saddle point singularity in the density of states near the chemical potential.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Quantifying Photocurrent Loss of a Single Particle–Particle Interface in Nanostructured Photoelectrodes

Particle–particle interfaces are ubiquitous in nanostructured photoelectrodes and photovoltaics, which are important devices for solar energy conversion. Furthermore, these interfaces are expected to cause performance losses in these devices, but how much loss they would incur is poorly defined. Here we use a subparticle photoelectrochemical current measurement, in combination with specific photoelectrode configurations, to quantify the current losses from single particle–particle interfaces formed between individual TiO 2 nanorods operating as photoanodes in aqueous electrolytes. We find that a single interface leads to ~20% photocurrent loss (i.e., ~80% retention of the original current). Such quantitative, first-of-its-kind, information provides a metric for guiding the optimization and design of nanostructured photoelectrodes and photovoltaics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Ultrafast Electron Dynamics in Single Aluminum Nanostructures

Aluminum nanostructures are a promising alternative material to noble metal nanostructures for several photonic and catalytic applications, but their ultrafast electron dynamics remain elusive. Here in this paper, we combine single-particle transient extinction spectroscopy and parameter-free first-principles calculations to investigate the non-equilibrium carrier dynamics in aluminum nanostructures. Unlike gold nanostructures, we find the sub-picosecond optical response of lithographically fabricated aluminum nanodisks to be more sensitive to the lattice temperature than the electron temperature. We assign the rise in the transient transmission to electron–phonon coupling with a pump-power-independent lifetime of 500 ± 100 fs and theoretically confirm this strong electron–phonon coupling behavior. We also measure electron–phonon lifetimes in chemically synthesized aluminum nanocrystals and find them to be even longer (1.0 ± 0.1 ps) than for the nanodisks. We also observe a rise and decay in the transient transmissions with amplitudes that scale with the surface-to-volume ratio of the aluminum nanodisks, implying a possible hot carrier trapping and detrapping at the native oxide shell–metal core interface.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Halide Perovskite High- k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity

Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Bonds over Electrons: Proton Coupled Electron Transfer at Solid–Solution Interfaces

This Perspective argues that most redox reactions of materials at an interface with a protic solution involve net proton-coupled electron transfer (PCET) (or other cation-coupled ET). This view contrasts with the traditional electron-transferfocused view of redox reactions at semiconductors, but redox processes at metal surfaces are often described as PCET. Taking a thermodynamic perspective, transfer of an electron is typically accompanied by a stoichiometric proton, much as the chemistry of lithium-ion batteries involves coupled transfers of e – and Li + . The PCET viewpoint implicates the surface–H bond dissociation free energy (BDFE) as the preeminent energetic parameter and its conceptual equivalents, the electrochemical ne – /nH + potential versus the reversible hydrogen electrode (RHE) and the free energy of hydrogenation, ΔG° H . These parameters capture the thermochemistry of PCET at interfaces better than electronic parameters such as Fermi energies, electron chemical potentials, flatband potentials, or band-edge energies. A unified picture of PCET at metal and semiconductor surfaces is presented. Exceptions, limitations, implications, and future directions motivated by this approach are described.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Valence-state reflectometry of complex oxide heterointerfaces

Emergent phenomena in transition-metal-oxide heterostructures such as interface superconductivity and magnetism have been attributed to electronic reconstruction, which, however, is difficult to detect and characterise. Here we overcome the associated difficulties to simultaneously address the electronic degrees of freedom and distinguish interface from bulk effects by implementing a novel approach to resonant X-ray reflectivity (RXR). Our RXR study of the chemical and valance profiles along the polar (001) direction of a LaCoO 3 film on NdGaO 3 reveals a pronounced valence-state reconstruction from Co 3+ in the bulk to Co 2+ at the surface, with an areal density close to 0.5 Co 2+ ions per unit cell. An identical film capped with polar (001) LaAlO 3 maintains the Co 3+ valence over its entire thickness. As a result, we interpret this as evidence for electronic reconstruction in the uncapped film, involving the transfer of 0.5e – per unit cell to the subsurface CoO 2 layer at its LaO-terminated polar surface.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Functional Janus structured liquids and aerogels

Janus structures have unique properties due to their distinct functionalities on opposing faces, but have yet to be realized with flowing liquids. We demonstrate such Janus liquids with a customizable distribution of nanoparticles (NPs) throughout their structures by joining two aqueous streams of NP dispersions in an apolar liquid. Using this anisotropic integration platform, different magnetic, conductive, or non-responsive NPs can be spatially confined to opposite sides of the original interface using magnetic graphene oxide (mGO)/GO, Ti 3 C 2 T x /GO, or GO suspensions. The resultant Janus liquids can be used as templates for versatile, responsive, and mechanically robust aerogels suitable for piezoresistive sensing, human motion monitoring, and electromagnetic interference (EMI) shielding with a tuned absorption mechanism. The EMI shields outperform their current counterparts in terms of wave absorption, i.e., SE T ≈ 51 dB, SE R ≈ 0.4 dB, and A = 0.91, due to their high porosity ranging from micro- to macro-scales along with non-interfering magnetic and conductive networks imparted by the Janus architecture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Low resistance p-type contacts to monolayer WSe2 through chlorinated solvent doping

Tungsten diselenide (WSe 2 ) is a promising p-type semiconductor limited by high contact resistance (R C ) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe 2 to chloroform provides simple and stable p-type doping. In monolayer WSe 2 transistors with Pd contacts, chloroform increases the maximum hole current by over 100× (>200 µA/µm), reduces R C to ~ 2.5 kΩ·μm, and retains an on/off ratio of 10 10 at room temperature. These improvements persist for over 8 months, survive a 150 °C thermal anneal, and remain effective down to 10 K, enabling a cryogenic R C of ~ 1 kΩ·μm. Density functional theory indicates that chloroform strongly physisorbs to WSe 2 , inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy suggest that chloroform intercalates at the WSe 2 interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder, though further studies are needed to conclusively confirm this mechanism. This robust, scalable approach enables high-yield WSe 2 transistors with good p-type performance.

42 ENGINEERING↗
DOE OSTI2013

High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure

Epitaxial thin films of room-temperature ferrimagnetic (Fe,Ge){sub 3}O{sub 4} were fabricated using pulsed laser deposition. Films with a single-phase spinel structure were grown under high oxygen pressures (0.01–0.6 Pa). The carrier transport across (Fe,Ge){sub 3}O{sub 4}/Nb:SrTiO{sub 3} interface was studied to estimate the spin polarization of (Fe, Ge){sub 3}O{sub 4}. Current–voltage curves of Fe{sub 2.8}Ge{sub 0.2}O{sub 4}/Nb:SrTiO{sub 3} junction showed rectifying behavior even at 300 K whereas Fe{sub 3}O{sub 4}/Nb:SrTiO{sub 3} junction showed ohmic behavior. Calculations based on a model for a Schottky contact with a ferromagnetic component yielded a spin polarization of 0.50 at 300 K for Fe{sub 2.8}Ge{sub 0.2}O{sub 4}, indicating its potential as a promising spin injector.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Characterization of very fast states in the vicinity of the conduction band edge at the SiO{sub 2}/SiC interface by low temperature conductance measurements

We have investigated the unique interface states (NI) generated by NO annealing at the SiO{sub 2}/SiC interfaces by low-temperature conductance measurements, which is more suitable for characterization of very fast interface states than high-frequency conductance measurements at room temperature. Although only a part of the NI states can be evaluated by measurements at room temperature, the whole picture of the NI states, especially near the conduction band edge (0.07 eV ≤ E{sub C}−E{sub T}), has been revealed by the low temperature measurements. The NI peak was present at the interface even without NO annealing. The NI density increased with NO annealing temperature. The NI density at the energy levels shallower than 0.2 eV exceeded 10{sup 12} cm{sup −2}eV{sup −1} after NO annealing. The capture cross section of the NI states is uniquely larger than that of conventional interface states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Current transport and thermoelectric properties of very high power factor Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) devices

The current transport and thermoelectric properties of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures with Fe{sub 3}O{sub 4} thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200 K due to the onset of conduction along the Si/SiO{sub 2} interface related to tunneling of electrons from the Fe{sub 3}O{sub 4} into the accumulation layer of holes at the Si/SiO{sub 2} interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 μV/K at 300 K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K{sup 2}m when the Fe{sub 3}O{sub 4} layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe{sub 3}O{sub 4} layer at 300 K, while the Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Temperature driven transition from giant to tunneling magneto-resistance in Fe{sub 3}O{sub 4}/Alq{sub 3}/Co spin Valve: Role of Verwey transition of Fe{sub 3}O{sub 4}

We demonstrate interface energy level engineering, exploiting the modification in energy band structure across Verwey transition temperature (T{sub V}) of Fe{sub 3}O{sub 4}, in a Fe{sub 3}O{sub 4}(111)/Alq{sub 3}/Co spin-valve (SV). I-V characteristics exhibit a transition in conduction mode from carrier injection to tunneling across T{sub V} of Fe{sub 3}O{sub 4} electrode. Both giant magneto-resistance (GMR) and tunneling MR (TMR) have been observed in a single SV, below and above T{sub V}, respectively. We have achieved room-temperature SV operation in our device. We believe that the tuning of charge gap at Fermi level across T{sub V} resulting in a corresponding tuning of conduction mode and a unique cross over from GMR to TMR.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗