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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Ultrathin magnetic oxide EuO films on Si(001) using SiO{sub x} passivation-Controlled by hard x-ray photoemission spectroscopy

We present the chemical and structural optimization of ultrathin magnetic oxide EuO films on silicon. By applying a controlled in situ passivation of the Si(001) surface with SiO{sub x} in the monolayer regime, metallic silicide contaminations at the interface can be effectively reduced down to a sub-monolayer coverage, as was carefully quantified by interface-sensitive hard x-ray photoemission spectroscopy. Heteroepitaxial growth of EuO on Si(001) is sustained for this ultrathin SiO{sub x}-passivation, and bulk-near magnetic properties are observed for the 4 nm-thin EuO films. Our successful combination of chemically and structurally optimized EuO/Si(001) heterostructures by ultrathin in situ SiO{sub x} passivation makes this system promising for an application as alternative spin functional tunnel contacts in spin-FETs.

36 MATERIALS SCIENCE↗
DOE OSTI2013

A seven-crystal Johann-type hard x-ray spectrometer at the Stanford Synchrotron Radiation Lightsource

We present a multicrystal Johann-type hard x-ray spectrometer ({approx}5-18 keV) recently developed, installed, and operated at the Stanford Synchrotron Radiation Lightsource. The instrument is set at the wiggler beamline 6-2 equipped with two liquid nitrogen cooled monochromators - Si(111) and Si(311) - as well as collimating and focusing optics. The spectrometer consists of seven spherically bent crystal analyzers placed on intersecting vertical Rowland circles of 1 m of diameter. The spectrometer is scanned vertically capturing an extended backscattering Bragg angular range (88 Degree-Sign -74 Degree-Sign ) while maintaining all crystals on the Rowland circle trace. The instrument operates in atmospheric pressure by means of a helium bag and when all the seven crystals are used (100 mm of projected diameter each), has a solid angle of about 0.45% of 4{pi} sr. The typical resolving power is in the order of (E/{Delta}E){approx}10 000. The spectrometer's high detection efficiency combined with the beamline 6-2 characteristics permits routine studies of x-ray emission, high energy resolution fluorescence detected x-ray absorption and resonant inelastic x-ray scattering of very diluted samples as well as implementation of demanding in situ environments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Hard x-ray tomographic studies of the destruction of an energetic electron ring

A tomography system was designed and built at the Large Plasma Device to measure the spatial distribution of hard x-ray (100 KeV-3 MeV) emissivity. The x-rays were generated when a hot electron ring was significantly disrupted by a shear Alfven wave. The plasma is pulsed at 1 Hz (1 shot/s). A lead shielded scintillator detector with an acceptance angle defined by a lead pinhole is mounted on a rotary gimbal and used to detect the x-rays. The system measures one chord per plasma shot using only one detector. A data plane usually consists of several hundred chords. A novel Dot by Dot Reconstruction (DDR) method is introduced to calculate the emissivity profile from the line integrated data. In the experiments, there are often physical obstructions, which make measurements at certain angles impossible. The DDR method works well even in this situation. The method was tested with simulated data, and was found to be more effective than previously published methods for the specific geometry of this experiment. The reconstructed x-ray emissivity from experimental data by this method is shown.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Self-standing quasi-mosaic crystals for focusing hard X-rays

A quasi mosaic bent crystal for high-resolution diffraction of X and {gamma} rays has been realized. A net curvature was imprinted to the crystal thanks to a series of superficial grooves to keep the curvature without external devices. The crystal highlights very high diffraction efficiency due to quasi mosaic curvature. Quasi mosaic crystals of this kind are proposed for the realization of a high-resolution focusing Laue lens for hard X-rays.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Ultra-bright, ultra-broadband hard x-ray driven by laser-produced energetic electron beams

We propose a new method of obtaining a compact ultra-bright, ultra-broadband hard X-ray source. This X-ray source has a high peak brightness in the order of 10{sup 22} photons/(s mm{sup 2} mrad{sup 2} 0.1\%BW), an ultrashort duration (10 fs), and a broadband spectrum (flat distribution from 0.1 MeV to 4 MeV), and thus has wide-ranging potential applications, such as in ultrafast Laue diffraction experiments. In our scheme, laser-plasma accelerators (LPAs) provide driven electron beams. A foil target is placed oblique to the beam direction so that the target normal sheath field (TNSF) is used to provide a bending force. Using this TNSF-kick scheme, we can fully utilize the advantages of current LPAs, including their high charge, high energy, and low emittance.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Femtosecond x-ray absorption spectroscopy with hard x-ray free electron laser

We have developed a method of dispersive x-ray absorption spectroscopy with a hard x-ray free electron laser (XFEL), generated by a self-amplified spontaneous emission (SASE) mechanism. A transmission grating was utilized for splitting SASE-XFEL light, which has a relatively large bandwidth (ΔE/E ∼ 5 × 10{sup −3}), into several branches. Two primary split beams were introduced into a dispersive spectrometer for measuring signal and reference spectra simultaneously. After normalization, we obtained a Zn K-edge absorption spectrum with a photon-energy range of 210 eV, which is in excellent agreement with that measured by a conventional wavelength-scanning method. From the analysis of the difference spectra, the noise ratio was evaluated to be ∼3 × 10{sup −3}, which is sufficiently small to trace minute changes in transient spectra induced by an ultrafast optical laser. This scheme enables us to perform single-shot, high-accuracy x-ray absorption spectroscopy with femtosecond time resolution.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

The electronic structures of Mg-doped InN (Mg-InN) epilayers with the Mg concentration, [Mg], ranging from 1 × 10{sup 19} to 5 × 10{sup 19} cm{sup −3} were systematically investigated by soft and hard X-ray photoelectron spectroscopies. The angle-resolved results on the core-level and valence band photoelectron spectra as a function of [Mg] revealed that the energy band of Mg-InN showed downward bending due to the n{sup +} surface electron accumulation and p type layers formed in the bulk. With an increase in [Mg], the energy-band changed from monotonic to two-step n{sup +}p homojunction structures. The oxygen concentration rapidly increased at the middle-bulk region (∼4.5 to ∼7.5 nm) from the surface, which was one of the reasons of the transformation of two-step energy band.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Direct measurement of band offset at the interface between CdS and Cu{sub 2}ZnSnS{sub 4} using hard X-ray photoelectron spectroscopy

We directly and non-destructively measured the valence band offset at the interface between CdS and Cu{sub 2}ZnSnS{sub 4} (CZTS) using hard X-ray photoelectron spectroscopy (HAXPES), which can measure the electron state of the buried interface because of its large analysis depth. These measurements were made using the following real devices; CZTS(t = 700 nm), CdS(t = 100 nm)/CZTS(t = 700 nm), and CdS(t = 5 nm)/CZTS(t = 700 nm) films formed on Mo coated glass. The valence band spectra were measured by HAXPES using an X-ray photon energy of 8 keV. The value of the valence band offset at the interface between CdS and CZTS was estimated as 1.0 eV by fitting the spectra. The conduction band offset could be deduced as 0.0 eV from the obtained valence band offset and the band gap energies of CdS and CZTS.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Reactive ZnO/Ti/ZnO interfaces studied by hard x-ray photoelectron spectroscopy

The chemistry and intermixing at buried interfaces in sputter deposited ZnO/Ti/ZnO thin layers were studied by hard x-ray photoelectron spectroscopy. The long mean free path of the photoelectrons allowed for detailed studies of the oxidation state, band bending effects, and intrinsic doping of the buried interfaces. Oxidation of the Ti layer was observed when ZnO was deposited on top. When Ti is deposited onto ZnO, Zn Auger peaks acquire a metallic character indicating a strong reduction of ZnO at the interface. Annealing of the stack at 200 °C results in further reduction of ZnO and oxidation of Ti. Above 300 °C, oxygen transport from the bulk of the ZnO layer takes place, leading to re-oxidation of ZnO at the interface and further oxidation of Ti layer. Heating above 500 °C leads to an intermixing of the layers and the formation of a Zn{sub x}TiO{sub y} compound.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Hard X-ray nanoimaging method using local diffraction from metal wire

A simple hard X-ray imaging method achieving a high spatial resolution is proposed. Images are obtained by scanning a metal wire through the wave field to be measured and rotating the sample to collect data for back projection calculations; the local diffraction occurring at the edges of the metal wire operates as a narrow line probe. In-line holograms of a test sample were obtained with a spatial resolution of better than 100 nm. The potential high spatial resolution of this method is shown by calculations using diffraction theory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation

Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Probing deeper by hard x-ray photoelectron spectroscopy

We report an hard x-ray photoelectron spectroscopy method combining high excitation energy (15 keV) and improved modelling of the core-level energy loss features. It provides depth distribution of deeply buried layers with very high sensitivity. We show that a conventional approach relying on intensities of the core-level peaks is unreliable due to intense plasmon losses. We reliably determine the depth distribution of 1 ML La in a high-κ/metal gate stack capped with 50 nm a-Si. The method extends the sensitivity of photoelectron spectroscopy to depths beyond 50 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Hard x-ray photoelectron spectroscopy study of Ge{sub 2}Sb{sub 2}Te{sub 5}; as-deposited amorphous, crystalline, and laser-reamorphized

We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge{sub 2}Sb{sub 2}Te{sub 5} using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Measurement of coherence length and incoherent source size of hard x-ray undulator beamline at Pohang Light Source-II

We measured the spatial coherence length and incoherent source size of a hard x-ray undulator beamline at Pohang Light Source-II, the stored electron energy of which has been increased from 2.5 GeV to 3 GeV. The coherence length was determined by single-slit measurement of the visibility of the Fresnel diffraction pattern. The correlated incoherent source size was cross-checked for three different optics: the single slit, beryllium parabolic compound refractive lenses, and the Fresnel zone plate. We concluded that the undulator beamline has an effective incoherent source size (FWHM) of 540 μm (horizontal) × 50 μm (vertical)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Hard X-ray photoelectron spectroscopy of Li{sub x}Ni{sub 1−x}O epitaxial thin films with a high lithium content

The core-level and valence-band electronic structures of Li{sub x}Ni{sub 1−x}O epitaxial thin films with x = 0, 0.27, and 0.48 were studied by hard X-ray photoelectron spectroscopy. A double peak structure, consisting of a main peak and a shoulder peak, and a satellite structure were observed in the Ni 2p{sub 3/2} core-level spectra. The intensity ratio of the shoulder to main peak in this double peak structure increased with increasing lithium content in Li{sub x}Ni{sub 1−x}O. This lithium doping dependence of the Ni 2p{sub 3/2} core-level spectra was investigated using an extended cluster model, which included the Zhang–Rice (ZR) doublet bound states arising from a competition between O 2p – Ni 3d hybridization and the Ni on-site Coulomb interaction. The results indicated that the change in the intensity ratio in the main peak is because of a reduction in the ZR doublet bound states from lithium substitutions. This strongly suggests that holes compensating Li doping in Li{sub x}Ni{sub 1−x}O are of primarily ZR character.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Relating polarizability to volume, ionization energy, electronegativity, hardness, moments of momentum, and other molecular properties

Semiquantitative relationships between the mean static dipole polarizability and other molecular properties such as the volume, ionization energy, electronegativity, hardness, and moments of momentum are explored. The relationships are tested using density functional theory computations on the 1641 neutral, ground-state, organic molecules in the TABS database. The best polarizability approximations have median errors under 5%.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗