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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Redox Gating for Colossal Carrier Modulation and Unique Phase Control

Redox gating, a novel approach distinct from conventional electrolyte gating, combines reversible redox functionalities with common ionic electrolyte moieties to engineer charge transport, enabling power-efficient electronic phase control. This study achieves a colossal sheet carrier density modulation beyond 10 16 cm -2 , sustainable over thousands of cycles, all within the sub-volt regime for functional oxide thin films. The key advantage of this method lies in the controlled injection of a large quantity of carriers from the electrolyte into the channel material without the deleterious effects associated with traditional electrolyte gating processes such as the production of ionic defects or intercalated species. The redox gating approach offers a simple and practical means of decoupling electrical and structural phase transitions, enabling the isostructural metal-insulator transition and improved device endurance. The versatility of redox gating extends across multiple materials, irrespective of their crystallinity, crystallographic orientation, or carrier type (n- or p-type). This inclusivity encompasses functional heterostructures and low-dimensional quantum materials composed of sustainable elements, highlighting the broad applicability and potential of the technique in electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Steric Impediment of Ion Migration Contributes to Improved Operational Stability of Perovskite Solar Cells

The operational instability of perovskite solar cells (PSCs) is understood to mainly originate from the migration of ionic species (or charged defects) under a potential gradient. Compositional engineering of the “A” site cation of the ABX3 perovskite structure has been shown to be an effective route to improve the stability of PSCs. Here, the effect of size-mismatch-induced lattice distortions on the ion migration energetics and operational stability of PSCs is investigated. It is determined that the size mismatch of the mixed “A” site composition films and devices leads to a steric effect to impede the migration pathways of ions to increase the activation energy of ion migration, which is demonstrated through multiple theoretical and experimental evidence. Consequently, the mixed composition devices exhibit significantly improved thermal stability under continuous heating at 85 °C and operational stability under continuous 1 sun illumination, with an extrapolated lifetime of 2011 h, compared to the 222 h of the reference device.

14 SOLAR ENERGY↗
DOE OSTI2022

Te/CdTe and Al/CdTe Interfacial Energy Band Alignment by Atomistic Modeling

A synergistic approach that incorporates first-principles atomistic modeling with numerical device simulations is used to systematically evaluate the role of heterointerfaces within metal-chalcogenide-based photovoltaic technologies. Two interfaces involving either a tellurium back contact or aluminum back electrode combined with a cadmium telluride absorber layer within cadmium-telluride-based thin-film solar cells are investigated on an atomic scale to determine the mechanisms contributing to variations in device performance. Electronic structures and predicted charge transport behavior with respect to cadmium and tellurium termination of the absorber layer are studied along the polar oriented CdTe{111} facets. The computational methodology reveals a noticeable contrast between the Schottky barrier forming Al/CdTe interface versus the Type I Te/CdTe heterojunction. Greater band bending features are exhibited by the cadmium termination as opposed to the tellurium termination for each interface case. Subsequent device modeling suggests that 3.6% higher photovoltaic conversion efficiency is achievable for the cadmium termination relative to the tellurium termination of the Te/CdTe interface. Based strictly on an idealistic representation, both interface models show the importance of atomic-scale interfacial properties for cadmium telluride solar cell device performance with their bulk properties being validated in comparison to published experimental data. Here, the synergistic approach offers a suitable method to analyze solar cell interfaces through a predictive computational framework for the engineering and optimization of metal-chalcogenide-based thin-film photovoltaic technologies.

Green’s function↗
DOE OSTI2022

High-Throughput Microfluidics Platform for Intracellular Delivery and Sampling of Biomolecules from Live Cells

Nondestructive cell membrane permeabilization systems enable the intracellular delivery of exogenous biomolecules for cell engineering tasks as well as the temporal sampling of cytosolic contents from live cells for the analysis of dynamic processes. Here, in this paper, we report a microwell array format live-cell analysis device (LCAD) that can perform localized-electroporation induced membrane permeabilization, for cellular delivery or sampling, and directly interfaces with surface-based biosensors for analyzing the extracted contents. We demonstrate the capabilities of the LCAD via an automated high-throughput workflow for multimodal analysis of live-cell dynamics, consisting of quantitative measurements of enzyme activity using self-assembled monolayers for MALDI mass spectrometry (SAMDI) and deep-learning enhanced imaging and analysis. By combining a fabrication protocol that enables robust assembly and operation of multilayer devices with embedded gold electrodes and an automated imaging workflow, we successfully deliver functional molecules (plasmid and siRNA) into live cells at multiple time-points and track their effect on gene expression and cell morphology temporally. Furthermore, we report sampling performance enhancements, achieving saturation levels of protein tyrosine phosphatase activity measured from as few as 60 cells, and demonstrate control over the amount of sampled contents by optimization of electroporation parameters using a lumped model. Lastly, we investigate the implications of cell morphology on electroporation-induced sampling of fluorescent molecules using a deep-learning enhanced image analysis workflow.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Wettability and capillary effects: Dynamics of pinch-off in unconstricted straight capillary tubes

We study the interfacial evolution of immiscible two-phase flow within a capillary tube in the partial wetting regime using direct numerical simulation. We investigate the flow patterns resulting from the displacement of a more viscous fluid by a less viscous one under a wide range of wettability conditions. We find that beyond a wettability dependent critical capillary number, a uniform displacement by a less viscous fluid can transition into a growing finger that eventually breaks up into discrete blobs by a series of pinch-off events for both wetting and non-wetting contact angles. This study validates previous experimental observations of pinch-off for wetting contact angles and extends those to non-wetting contact angles. We find that the blob length increases with the capillary number. We observe that the time between consecutive pinch-off events decreases with the capillary number and is greater for more wetting conditions in the displaced phase. Here, we further show that the blob separation distance as a function of the difference between the inlet velocity and the contact line speed collapses into two monotonically decreasing curves for wetting and non-wetting contact angles. For the phase separation in the form of pinch-off, this work provides a quantitative study of the emerging length and time scales and their dependence on the wettability conditions, capillary effects, and viscous forces.

42 ENGINEERING↗
DOE OSTI2020

Mathematics of Gas Ingress of Hermetic Packages

Herein, we have derived a gas ingress and egress equation from the first principles of ideal gases. This work is intended to benefit the hermetic microelectronics packaging community, but it may be applied to other fields that require a deep understanding of gas ingress and egress dynamics. The equation outlined herein encompasses package material properties, package characteristics, hermetic testing conditions, and service conditions. It serves as a practical utility for calculating package pressure changes due to gas ingress and egress and, therefore, a power tool for component and system service life predictions.

42 ENGINEERING↗
DOE OSTI2024

Digital risk analysis in nuclear engineering projects: Designing for safety, performance, reliability, and security

Cyber-informed engineering and security-by-design frameworks are important in promoting the need to identify cybersecurity concerns early in the systems engineering lifecycle so risks from adversarial cyber-attacks can be eliminated or reduced through engineering design practices. In addition to adversarial risk, risk in operational technology systems also includes non-adversarial and unintentional risk from other factors such as human performance errors, environmental conditions, design flaws, and device degradation or failure. This paper introduces a new concept for characterizing digital risk, both adversarial and non-adversarial, and provides the basis for initial research into a novel digital risk analysis approach focused on incorporating attack difficulty into a multi-attribute analysis technique using robust decision-making. This digital risk characterization is also used to frame a discussion on the challenges of competing objectives and competing stakeholder requirements in an integrated energy system project that incorporates a small modular reactor and industrial facility.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2022

FPGA-based computing system for processing data in size, weight, and power constrained environments

Technologies that are well-suited for use in size, weight, and power (SWAP)-constrained environments are described herein. A host controller dispatches data processing instructions to hardware acceleration engines (HAEs) of one or more field programmable gate arrays (FPGAs) and further dispatches data transfer instructions to a memory controller, such that the HAEs perform processing operations on data stored in local memory devices of the HAEs in parallel with other data being transferred from external memory devices coupled to the FPGA(s) to the local memory devices.

Napier, Matthew↗
DOE OSTI2022

Hybrid Organic Inorganic Perovskites: Physical Properties and Applications (in 4 Volumes)

This four-volume handbook gives a state-of-the-art overview of hybrid organic inorganic perovskites, both two dimensional (2D) and three dimensional (3D), from synthesis and characterization and simulation to optoelectronic devices (such as solar cells and light emitting diodes), spintronics devices and catalysis application. The editors, coming from academia and national laboratory, are known for their didactic skills as well as their technical expertise. Coordinating the efforts of 30 expert authors in 21 chapters, they construct the story of hybrid perovskite structural and optical properties, electronic and spintronic response, laser action, and catalysis from varied viewpoints: materials science, chemical engineering, and energy engineering. The four volumes are arranged according to the focus material properties. Volume 1 is focused on the material physical properties including structure, deposition characteristic and the structure of the electronic bands and excitons of these compounds. Volume 2 covers the hybrid perovskite optical properties including the ultrafast optical response, photoluminescence and laser action. Volume 3 contains the spin response of these compounds including application such as spin valves, photogalvanic effect, and magnetic response of light emitting diodes and solar cell devices. Finally, and highly relevant to tomorrow's energy challenges, volume 4 is focused on the physics and device properties of the most relevant applications of the hybrid perovskites, namely photovoltaic solar cells. The text contains many high-quality colorful illustrations and examples, as well as thousands of up-to-date references to peer-reviewed articles, reports and websites for further reading. This comprehensive and well-written handbook is a must-have reference for universities, research groups and companies working with the hybrid organic inorganic perovskites.

applications↗
DOE OSTI2022

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

Here, we report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar regrowth processes limit diode performance via the introduction of unintentional dopants and defect states. p-GaN was selectively regrown in n-GaN trenches with SiO 2 masks of variable mask-to-trench-width ratio. Dilute Al layers were periodically introduced during regrowth as markers of the growth interface. Correlated nanoscale mapping of doping, conductivity, and dopant complexes was achieved with atom probe tomography (APT), scanning spreading resistance microscopy (SSRM), and cathodoluminescence (CL) spectroscopy, respectively. The Al marker layers, detected by APT, enabled reconstruction of the faceted growth interface and correlation of the dopant concentration with position and time. The p-GaN growth rate is proportional to the mask-to-trench width ratio while the dopant incorporation rate is invariant. At trench edges, magnesium incorporation is suppressed, and oxygen incorporation enhanced, due to preferential incorporation on the semi-polar growth surface, leading to compensation and less abrupt p-n junctions; the SiO 2 mask is a source of oxygen. Residual etch damage below the regrowth interface induces n-type and p-type conductivity, creating leakage pathways. The non-uniform Mg incorporation is driven by crystal anisotropy and is thus inherent to non-planar regrowth, but can be mitigated by engineering the regrowth interface and process parameters. The unprecedented integration of spatially resolved mapping of dopants, impurities, conductivity, and carrier type is a powerful approach to discriminating distinct factors that limit the performance of regrown diodes, enabling the rational optimization of process and device design.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Devices and methods for generating electrical current from methane

Methods, microbial fuel cells and microbial consortia for generating electrical current are provided according to the present invention which include providing a microbial consortium to an anode chamber of a microbial fuel cell, wherein the microbial consortium includes: 1) an engineered methanogen that contains a heterologous nucleic acid sequence encoding methyl-coenzyme M reductase derived from an anaerobic methane oxidizer, 2) an exoelectrogen microbe that produces electrically-conductive appendages and/or one or more types of electron carrier, and 3) a sludge, methane-acclimated sludge, a sludge isolate component, a methane-acclimated sludge isolate component chosen from Paracoccus spp., Geotoga spp., Geobacter spp., Methanosarcina spp., Garciella spp., humic acids; or a combination of any two or more thereof.

Wood, Thomas K.↗
DOE OSTI2024

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics

Al 0.6 Ga 0.4 N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10 −9 A cm −2 . This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10 5 (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W −1 at a wavelength of 250 nm.

Jeong, Hoon [Department of Electronic Engineering ↗
DOE OSTI2024

Formation of tunable diamond micro- and nanopillars for field effect enhancement applications

Here, we developed a process for the fabrication of tunable single crystal diamond micro- and nanopillars, with tip widths ranging from 40 to 460 nm, densities ranging from 0.5 to 53.5 pillars/μm 2 , and heights greater than 4.5 μm. A self-assembled Au nanodot ensemble etch mask was formed from an annealed Au thin film. The nanodot diameter and density can be tuned using the initial film thickness. The pillars were etched from the nanodot mask using an RIE O 2 plasma, which has infinite selectivity for the diamond when applied at low RF powers (50 W). Finally, the pillars can be sharpened to ~40 nm tip widths by annealing in air at 650 °C. These pillars can be used for applications such as field effect enhancement of diamond photocathode devices, enhancement of optical emission from N-V centers, and antireflective coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high-performance back-gated n-type MoS 2 and p-type WSe 2 transistors with sub-threshold values approaching the ideal limit of 60 mV/dec and complementary inverter amplifier gain of 34, the highest among comparable amplifiers. Remarkably, these outstanding values were obtained under 1 V power supply. Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. These results establish lithium-ion substrates as a promising alternative to ILs for advanced thin-film devices.

42 ENGINEERING↗
DOE OSTI2020

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Unintentional impurity incorporation in GaN drift layers represents a challenging issue that can limit their potential performance in vertical power devices. In this paper, we focus on studying the origins of Fe impurity incorporation in metal-organic chemical vapor deposition (MOCVD) grown GaN materials. Acting as a compensator in n-type GaN drift layers, Fe impurities can reduce the electron mobility in GaN and limit the lowest controllable doping level. Two sources, the sample cleaning process and growth susceptor, were identified as the main mechanisms of Fe incorporation in the MOCVD GaN growth process. It was found that solvent cleaning of the wafer can introduce significant Fe contamination at the growth interface, which would slowly be incorporated into the GaN epilayer, thus causing background Fe impurity as high as 10 17 cm -3 level. Moreover, the Fe impurity in the coating material on the susceptor can introduce additional Fe impurity during the growth process. Our studies revealed that the Fe impurity level could be significantly suppressed by more than two orders when an alternative cleaning process was used and the susceptor surface was fully covered by substrates. Characterization of the Fe impurity concentrations was performed via secondary ion mass spectrometry. The trap level (E C - 0.57) eV from deep-level transient spectroscopy that had previously been attributed to Fe confirmed the carrier compensation effect from Fe. Room temperature Hall mobility as high as 1007 cm 2 /V s was achieved on the MOCVD grown low-Fe GaN. Results from this work will provide guidance for achieving high purity GaN toward high performance GaN vertical power devices.

42 ENGINEERING↗