Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Prime factorization using magnonic holographic devices

Determining the prime factors of a given number $N$ is a problem that requires super-polynomial time for conventional digital computers. A polynomial-time algorithm was invented by Shor for quantum computers. In this paper, we present experimental data that demonstrate prime factorization using spin-wave interference but without quantum entanglement. Prime factorization includes three major steps. First, a general-type computer calculates the sequence of numbers m k mod($N$), where $N$ is the number to be factorized, m is a randomly chosen positive integer, and k = 1, 2, 3, 4, 5, 6…. Next, the period of the calculated sequence $r$ is determined by exploiting spin-wave interference. Finally, the general-type computer determines the primes based on the obtained $r$. The experiment for period finding was conducted on a six-terminal Y 3 Fe 2 (FeO 4 ) 3 device. We chose number 15 for testing and determined its primes using a sequence of measurements. The obtained experimental data for a micrometer-sized prototype aimed to demonstrate the benefits of using spin-wave devices to solve complex computational problems. Scalability is one of the major strengths inherent in this type of wave-based device, which may provide a route to nanometer-sized logic circuits. We discuss the physical and technological limitations of this approach, which define the maximum size of N and the computational speed. Although this classical approach cannot compete with the quantum algorithm in terms of efficiency, magnonic holographic devices can potentially be used as complementary logic units aimed at speeding up prime factorization for classical computers.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell

We consider a near-field electroluminescent refrigeration device. The device uses a GaAs light emitting diode as the cold side, and a Si photovoltaic cell as the hot side. The two sides are brought in close proximity to each other across a vacuum gap. The cooling is achieved by applying a positive bias on the GaAs light emitting diode. We show that the choice of GaAs and Si here can suppress the non-idealities for electroluminescent cooling purposes: GaAs has a wide bandgap with low Auger recombination, and Si is a non-polar semiconductor which leads to significantly reduced sub-bandgap heat transfer. We show that by using this configuration in the near-field regime, the cooling power density can reach 10 5 W/m 2 even in the presence of realistic Auger recombination and Shockley-Read-Hall recombination. In addition, with photovoltaic power recovery from the Si cell, the efficiency of the device can be further improved. Our work points to the significant potential of combining near-field heat transfer with active semiconductor devices for the control of heat flow.

14 SOLAR ENERGY↗
DOE OSTI2019

Effects of interfacial ligand type on hybrid P3HT:CdSe quantum dot solar cell device parameters

In this work, a series of CdSe quantum dot acceptors possessing six different ligand frameworks (i.e., pivalic acid, pyridine, butylamine, tert-butylthiol, thiophenol, and tetrahydrothiophene) were used as platforms for investigating the influence of quantum dot surface chemistry on the performance of hybrid poly(3-hexythiophene-2,5-diyl) (P3HT):CdSe quantum dot bulk heterojunction (BHJ) solar cells. We confirm that the device parameters used to evaluate solar cell performance are significantly influenced by the nature of the quantum dot surface ligand. The dependence of short circuit current density ($J_{SC}$) on the CdSe ligand type was probed using ultrafast time-resolved photoluminescence (PL) measurements, and good correlations between the ligand-dependent trends in $J_{SC}$ and excited state lifetime were found, in which the P3HT:CdSe quantum dot BHJs with the shortest PL lifetimes possess the largest device current densities. The frontier energy levels of the quantum dot acceptors are significantly influenced by surface ligands, wherein the device open circuit potentials (VOC) were found to linearly correlate with the energy difference ($ΔE_{DA}$) between the HOMO of the P3HT donor and the electrochemically determined LUMO of the CdSe quantum dot acceptors over a range of 220 mV. This work demonstrates the versatility of quantum dot ligand engineering for tuning the device parameters and performance of hybrid solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Advances in terahertz solid-state physics and devices

Terahertz (THz) science and technology have attracted tremendous attention owing to their potential applications in areas including high-speed communications, nondestructive evaluation, biological and medical sensing, and national security.1,2 Terahertz waves bridge electronics and photonics, as well as classical and quantum physics, making them equally attractive for fundamental studies of novel physical phenomena. To realize a broad range of real terahertz applications, it is essential to develop compact solid- state devices for terahertz sources, detectors, modulators, and compact systems. These devices often employ quantum materials and heterostructures and can incorporate other features including carrier transfer using atomic layer epitaxy, micro- and electromechanical systems, plasmonic resonators, and metamaterials. To optimize these devices, we have to understand and control ultrafast carrier dynamics in these advanced materials. Furthermore, we have organized a Special Topic in the Journal of Applied Physics to highlight the state-of-the-art in terahertz solid-state devices while also unveiling the properties of these materials on an ultrafast timescale.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Effect of selenium and chlorine co-passivation in polycrystalline CdSeTe devices

CdTe-based solar cell efficiency has rapidly improved over the last few years. Some of the reasons have been a change to the absorber composition including the incorporation of selenium, and better front contact and emitter materials in CdTe photovoltaic devices. In addition to the increase in short-circuit current by reducing the bandgap, Se plays other important roles in passivation of defects thus improving the conversion efficiency of CdSeTe/CdTe graded absorber photovoltaic devices. Here, we combine structural and optical characterizations with first principles calculations to investigate the role of Se and Cl segregation in CdSeTe devices. We find that in the presence of Se and Cl, the minority carrier lifetime improves due to a reduction of midgap defect states. Here, we also correlate this effect with defect passivation in CdSeTe devices and suggest innovative ways to further improve CdTe-based photovoltaic efficiency.

14 SOLAR ENERGY↗
DOE OSTI2021

Antifouling strategies for protecting bioelectronic devices

Bioelectronic devices are playing an increasingly important role in many areas of our lives. They power a significant portion of medical diagnostics and are becoming more and more important for delivery of therapeutics and monitoring of chronic symptoms. However, surface fouling phenomena, and especially biofouling in complex biological fluids, restricts the performance of these devices and severely reduces their useful lifespan. In this Research Update, we discuss the main principles and strategies that researchers use to prevent fouling and minimize or remove the foulants from bioelectronic device surfaces. We also survey a variety of antifouling approaches that can enhance device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Evidence for a thermally driven charge-density-wave transition in 1T-TaS 2 thin-film devices: Prospects for GHz switching speed

We report on the room-temperature switching of 1T-TaS 2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current–voltage characteristics. The switching action is based upon the nearly commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equilibrium. For sufficiently short pulses, with rise times in the nanosecond range, self-heating of the devices is suppressed, and their current–voltage characteristics are weakly nonlinear and free of hysteresis. This changes as the pulse duration is increased to ~200 ns, where the current develops pronounced hysteresis that evolves nonmonotonically with the pulse duration. By combining the results of our experiments with a numerical analysis of transient heat diffusion in these devices, we clearly reveal the thermal origins of their switching. In spite of this thermal character, our modeling suggests that suitable reduction of the size of these devices should allow their operation at GHz frequencies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices and applications, including power electronics, extreme-environment electronics, RF amplifiers, and optoelectronics such as light-emitting diodes and laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), and ultrafast optoelectronics (e.g., photodetectors and quantum cascade lasers) due to its large conduction band offset, large optical phonon energy, and promising room-temperature operation. This paper presents a comprehensive review on the recent progress and challenges of III-nitrides based ISBT from the perspectives of materials, structures, devices, and applications, with a focus on nonpolar and semipolar III-nitrides. Various device structures have been demonstrated for III-nitrides based ISBT, including quantum wells, dots, and wires, among which AlGaN/GaN quantum wells are the most widely used. The effects of device parameters, crystal orientations, and doping on the ISBT properties of AlGaN/GaN quantum wells are discussed. Although the room-temperature operation is still elusive, theoretical and experimental studies show that nonpolar and semipolar III-nitrides based ISBT exhibits tunable ISBT wavelength from far-IR to THz spectral range with higher efficiency compared with polar c-plane ISBT. This review can serve as a gateway to and an important reference for the recent progress and challenges of III-nitrides based ISBT and its potential applications in sensing, communication, ultrafast optoelectronics, and integrated photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Self-consistent integrated modeling of combined hybrid discharge-laser produced plasma devices for extreme ultraviolet metrology

Discharge- and laser-produced plasma (DLPP) devices are being used as light sources for extreme ultraviolet (EUV) generation. A key challenge for both, DPP and LPP, is achieving sufficient brightness to support the throughput requirements of nanometrology tools. To simulate the environment of a hybrid DLPP device and optimize the EUV output, we have developed an integrated HEIGHTS-DLPP computer simulation package. The package integrates simulation of two evolving plasmas (DPP and LPP) and includes modeling of a set of integrated self-consistent processes: external power source and plasma energy balance, plasma resistive magnetohydrodynamics, plasma heat conduction, detailed radiation transport (RT), and laser absorption and refraction. We simulated and optimized DLPP devices using Xe gas as a target material. We synchronized the external circuit parameters, chamber gas parameters, and laser beam temporal and spatial profiles to achieve maximum EUV output. The full 3D Monte Carlo scheme was integrated for detailed RT and EUV output calculations in Xe using more than 3600 spectral groups. The modeling results are in good agreement with Julich Forschungszentrum experimental data. Theoretical models, developed and integrated into the HEIGHTS package, showed wide capabilities and flexibility. In conclusion, the models and package can be used for optimization of the experimental parameters and settings, investigation of DLPP devices with complex design, analyzing the impact of integrated spatial effects and working timeline arrangement on the final EUV output, and EUV source size, shape, and angular distribution.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Two-dimensional perovskite heterostructures for single crystal semiconductor devices

Two-dimensional (2D) perovskites have gained much attention lately owing to their excellent optoelectronic properties, chemical tunability, and environmental stability. Multiple methods have been devised to synthesize high quality 2D perovskite single crystals, and recent progress in fabricating its heterostructures is notable as well. In particular, with growing interest in 2D van der Waals heterostructures, 2D perovskites have become a strong candidate as a new building block for heterostructures to reveal unique physical properties across different interfaces. Until now, various heterostructure devices of 2D perovskite single crystals with other types of 2D materials such as transition metal dichalcogenides (TMDs) and graphene have been studied, which have shown intriguing results including interlayer excitons and enhanced electronic properties. Here, we introduce various synthetic approaches to realize 2D perovskite single crystals and unique characteristics of their single crystal heterostructures fabricated with precision, possessing sharp interfaces. Moreover, recent studies of semiconductor devices based on 2D perovskite single crystal heterostructures are discussed in-depth. New perspectives to further the horizon in the field of 2D perovskite heterostructures are suggested in this work including the consideration of metal–2D material van der Waals contact, application of dry transfer techniques, electric bias driven ion diffusion studies, and nanocrystal array fabrication. 2D perovskite heterostructure single crystal devices factoring in these novel perspectives will further uncover the true potential of these materials for highly efficient and stable semiconductor devices.

Physics↗
DOE OSTI2023

Modeling of the spray-induced wall stress acting on the ignition assistance device

This research introduces a novel wall-stress model called the Spray-Induced Wall Stress (SIWS) model, which considers the effects of spray-wall impingement and the resulting formation of wall stress within the Lagrangian spray modeling framework. The primary objective of this paper is to provide a mathematical description of the fundamental physics underlying the model. Subsequently, the proposed model is validated using existing experimental data. Here, the remainder of the study focuses on the practical application of the model to an ignition assistance device. Specifically, this device is installed in a compression ignition engine and designed to enhance ignition in aviation-fueled high-altitude aircraft propulsion systems. The research sheds light on the mechanical impulse caused by the high-speed impact of the spray jet, leading to the accumulation of mechanical stress on the rigid body of the ignition assistance device. Previous studies on fluid-structure interaction have only considered the interaction between the gas phase and the solid wall. However, the SIWS model incorporates the additional impact of the impinging liquid spray jet. Consequently, the simulated stress distribution on the ignition assistance device can be estimated by considering both the gas-phase-induced term and the spray-induced term simultaneously.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

When in-memory computing meets spiking neural networks—A perspective on device-circuit-system-and-algorithm co-design

This review explores the intersection of bio-plausible artificial intelligence in the form of spiking neural networks (SNNs) with the analog in-memory computing (IMC) domain, highlighting their collective potential for low-power edge computing environments. Through detailed investigation at the device, circuit, and system levels, we highlight the pivotal synergies between SNNs and IMC architectures. Additionally, we emphasize the critical need for comprehensive system-level analyses, considering the inter-dependencies among algorithms, devices, circuit, and system parameters, crucial for optimal performance. An in-depth analysis leads to the identification of key system-level bottlenecks arising from device limitations, which can be addressed using SNN-specific algorithm–hardware co-design techniques. This review underscores the imperative for holistic device to system design-space co-exploration, highlighting the critical aspects of hardware and algorithm research endeavors for low-power neuromorphic solutions.

Physics↗
DOE OSTI2018

A theoretical study of the influence of barrier thickness variations on optical properties of a semiconductor multiple quantum well slow light device

The influence of barrier thickness variations on the operation of GaAs/AlGaAs multiple quantum well (MQW) slow light devices based on coherence population oscillations (CPOs) is explained. The variations are shown to affect the slow down factor (SDF) and bandwidth of these devices. Bloch equations and the analytical model in fractional dimension are used to analyse and simulate the slow light device. It is shown that other physical parameters of MQW structures (QW width and barrier alloy concentration) affect significantly the optical properties of the device. The presented approaches make it possible to achieve suitable values of SDF and focal energy by adjusting the barrier thickness, QW width and aluminium content. The maximum range of the centre frequency tuning is estimated to be about 1 THz in our calculations, while the slow down factor can reach a high value of 8.5 × 10{sup 4}. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Multi-device studies of pedestal physics and confinement in the I-mode regime

This paper describes joint ITPA studies of the I-mode regime, which features an edge thermal barrier together with L-mode-like particle and impurity transport and no Edge Localized Modes (ELMs). The regime has been demonstrated on the Alcator C-Mod, ASDEX Upgrade and DIII-D tokamaks, over a wide range of device parameters and pedestal conditions. Dimensionless parameters at the pedestal show overlap across devices and extend to low collisionality. When they are matched, pedestal temperature profiles are also similar. Pedestals are stable to peeling ballooning modes, consistent with lack of ELMs. Access to Imode is independent of heating method (neutral beam injection, Ion Cyclotron and/or Electron Cyclotron Resonance Heating). Normalized energy confinement H 98,y2 ≥ 1 has been achieved for a range of 3 ≤ q 95 ≤ 4.9 and scales favourably with power. Changes in turbulence in the pedestal region accompany the transition from L-mode to I-mode. The L-I threshold increases with plasma density and current, and with device size, but has a weak dependence on toroidal magnetic field B T . The upper limit of power for I-modes, which is set by I-H transitions, increases with B T and the power range is largest on Alcator C-Mod at B > 5 T. Finally, issues for extrapolation to ITER and other future fusion devices are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

DECAF Cross-device characterization of tokamak disruptions indicated by abnormalities in plasma vertical position and current

Abnormal (deviating from target) variations in the plasma vertical position Z and current I p (such as vertical displacements, transient I p 'spikes' and quenches) constitute common elements of a disruption, a phenomenon that is to be mitigated, or ultimately avoided in future reactor-relevant tokamaks. While those abnormalities are generally recognized cross-shot and cross-device, details in terms of appearance (or not) and order of those abnormalities in disruption event chains is bound with the plasma state at the time of the chain initiation. Detection of those abnormalities is thus indicative not only of the onset of the plasma collapse itself, but also of the disruption driving cause that is promoted at the particular plasma state. Here, occurrence of disruptions, explored via detection of a Ip quench, and analysis of disruption event chains constituted by Ip and Z abnormalities, is reported for in total 7 full years of operation of 3 devices (KSTAR, MAST-U and NSTX-U) using the DECAFTM code expanded tools and capabilities. It is shown that the disruption occurrence depends not only on details of the plasma state, but also on (device-dependent) technical elements of the shot exit scenario. A year-to-year change in main disruption causes and a reduction of the disruptivity rate, bound with device and operation upgrades, are reported. Particular trigger instances of disruption event chains (and the full chains, when applicable) are shown to occupy different parts of the operation space diagrams, in accordance with prior expectation. Plasma elongation is identified as an important factor influencing details of the chains and its role will be further explored.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Multi-machine validation of plasma initiation modelling and prospects for future devices: Predicting plasma initiation using only hardware design and control room input data

This paper reports on the generic prediction capability of full electromagnetic plasma initiation modelling with DYON, which was carried out for the first time in fusion research by the joint modelling of the International Tokamak Physics Activity—Integrating Operation Scenario group. The following devices were included in the experiment database: VEST (spherical torus, copper coils, Stainless steel wall, R/a = 0.3 m/0.2 m, V v = 3.7 m 3 ), MAST-U (spherical torus, copper coils, C wall, R/a = 0.7 m/0.5 m, V v = 55 m 3 ), EAST (conventional tokamak, superconducting coils, metallic wall, R/a = 1.85 m/0.5 m, V v = 38 m 3 ), DIII-D (conventional tokamak, copper coils, C wall, R/a = 1.67 m/0.65 m, V v = 35 m 3 ), and KSTAR (conventional tokamak, superconducting coils, C wall, R/a = 1.8 m/0.5 m, V v = 55 m 3 ). Despite the different hardware features of the devices, the required operating spaces of the loop voltage induction and prefill gas pressure for inductive plasma initiation in each device were successfully reproduced by the predictive simulations with DYON using only the individual hardware design and the control room input data for each discharge. This successful validation across multiple machines demonstrates that the full electromagnetic DYON modelling can capture the essential physics of inductive plasma initiation. The simulation settings commonly employed for all modelling and the modifications necessary to account for the discrepancies between individual devices are reported. Predictions for ITER based on the multi-machine validation indicate that a wide range of prefill gas pressures exists for the Townsend breakdown and the plasma burn-through (0.01–1.5 mPa).

DYON↗
DOE OSTI2022

Observation of well-defined Kohn-anomaly in high-quality graphene devices at room temperature

Abstract Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping thermal oxide layer limited the observation to low temperatures of a well-defined Kohn-anomaly behavior, related to the breakdown of the adiabatic Born–Oppenheimer approximation. Here, we design an optoelectronic device consisting of single-layer graphene electrically contacted with thin graphite leads, seated on an atomically flat hexagonal boron nitride substrate and gated with an ultra-thin gold layer. We show that this device is optically transparent, has no background optical peaks and photoluminescence from the device components, and no generation of laser-induced electrostatic doping (photodoping). This allows for room-temperature gate-dependent Raman spectroscopy effects that have only been observed at cryogenic temperatures so far, above all the Kohn-anomaly phonon energy normalization. The new device architecture, by decoupling graphene optoelectronic properties from the substrate effects, allows for observing quantum phenomena at room temperature.

Materials Science↗