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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

First-principles study of crystalline and amorphous AlMgB{sub 14}-based materials

We report first-principles investigations of crystalline and amorphous boron and M1{sub x}M2{sub y}X{sub z}B{sub 14−z} (M1, M2 = Al, Mg, Li, Na, Y; X = Ti, C, Si) phases (so-called “BAM” materials). Phase stability is analyzed in terms of formation energy and dynamical stability. The atomic configurations as well as the electronic and phonon density states of these phases are compared. Amorphous boron consists of distorted icosahedra, icosahedron fragments, and dioctahedra, connected by an amorphous network. The presence of metal atoms in amorphous BAM materials precludes the formation of icosahedra. For all the amorphous structures considered here, the Fermi level is located in the mobility gap independent of the number of valence electrons. The intra-icosahedral vibrations are localized in the range of 800 cm{sup −1}, whereas the inter-icosahedral vibrations appear at higher wavenumbers. The amorphization leads to an enhancement of the vibrations in the range of 1100–1250 cm{sup −1}. The mechanical properties of BAM materials are investigated at equilibrium and under shear and tensile strain. The anisotropy of the ideal shear and tensile strengths is explained in terms of a layered structure of the B{sub 12} units. The strength of amorphous BAM materials is lower than that of the crystalline counterparts because of the partial fragmentation of the boron icosahedra in amorphous structures. The strength enhancement found experimentally for amorphous boron-based films is very likely related to an increase in film density, and the presence of oxygen impurities. For crystalline BAM materials, the icosahedra are preserved during elongation upon tension as well as upon shear in the (010)[100] slip system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Solid-solution stability and preferential site-occupancy in (R-R′){sub 2}Fe{sub 14}B compounds

The rare-earth (R) uniaxial anisotropy of R{sub 2}Fe{sub 14}B compounds with magnetic R atoms (e.g., Nd or Pr) is at the origin of the exceptional hard magnetic properties achieved in magnets based on these compounds. The uniaxial anisotropy found in Ce{sub 2}Fe{sub 14}B is attributed mainly to the magnetism of Fe. Ce is the most abundant R element and there has been much recent effort to fabricate magnets in which Ce is partially substituted for Nd. In the present neutron study of (R{sub 1−x}Ce{sub x}){sub 2}Fe{sub 14}B (R = La or Nd), Ce is found to enter the R{sub 2}Fe{sub 14}B phase over the entire composition range. The crystallographic parameters decrease with increasing Ce content and the Ce atoms preferentially occupy the smaller 4f sites. It is concluded that Ce in these (RR′){sub 2}Fe{sub 14}B compounds essentially maintains the intermediate valence character found in Ce{sub 2}Fe{sub 14}B. It is proposed that, in this intermediate valence state, Ce weakly contributes to uniaxial anisotropy, thus making a link with the fact that significant coercivity is preserved in Ce-substituted NdFeB magnets.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

The appearance of Ti{sup 3+} states in solution-processed TiO{sub x} buffer layers in inverted organic photovoltaics

We study the low-temperature solution processed TiO{sub x} films and device structures using core level and valence X-ray photoelectron spectroscopy (XPS) and electronic structure calculations. We are able to correlate the fraction of Ti{sup 3+} present as obtained from Ti 2p core level XPS with the intensity of the defect states that appear within the band gap as observed with our valence XPS. Constructing an operating inverted organic photovoltaic (OPV) using the TiO{sub x} film as an electron selective contact may increase the fraction of Ti{sup 3+} present. We provide evidence that the number of charge carriers in TiO{sub x} can be significantly varied and this might influence the performance of inverted OPVs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Optical and electronic properties of semiconducting Sn{sub 2}S{sub 3}

We report the electronic and optical properties of Sn{sub 2}S{sub 3} as obtained from first principles calculations with the modified Becke-Johnson potential. The electronic structure shows that Sn occurs in both divalent and tetravalent forms. The fundamental band gap of 0.82 eV is indirect. The direct gap is 0.97 eV, but the onset of strong optical absorption is much higher at ∼1.75 eV. This is as a consequence of the Sn{sup 2+} s and Sn{sup 4+} s characters of the valence and conduction band extrema, respectively. We also find strong and different anisotropies for conduction in p- and n-type Sn{sub 2}S{sub 3}. This should be taken into account in device structures in order to obtain efficient charge collection. The thermopowers are reasonably high for both p- and n-type materials. p-type Sn{sub 2}S{sub 3} shows complex corrugated isosurface sections, while the n-type material shows multiple band extrema.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Hydrogen-related complexes in Li-diffused ZnO single crystals

Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li{sub 2}O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>10{sup 19 }cm{sup −3}). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm{sup −1}, attributed to surface O-H species. When Li{sub 2}CO{sub 3} is used, a structured blue luminescence band and O-H mode at 3327 cm{sup −1} are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level ∼0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electronic structure and magnetic anisotropy of L1{sub 0}-FePt thin film studied by hard x-ray photoemission spectroscopy and first-principles calculations

We have studied the electronic structure of the L1{sub 0} ordered FePt thin film by hard x-ray photoemission spectroscopy (HAXPES), cluster model, and first-principles calculations to investigate the relationship between the electronic structure and perpendicular magneto-crystalline anisotropy (MCA). The Fe 2p core-level HAXPES spectrum of the ordered film revealed the strong electron correlation in the Fe 3d states and the hybridization between the Fe 3d and Pt 5d states. By comparing the experimental valence band structure with the theoretical density of states, the strong electron correlation in the Fe 3d states modifies the valence band electronic structure of the L1{sub 0} ordered FePt thin film through the Fe 3d-Pt 5d hybridization. These results strongly suggest that the strong electron correlation effect in the Fe 3d states and the Fe 3d-Pt 5d hybridization as well as the spin-orbit interaction in the Pt 5d states play important roles in the perpendicular MCA for L1{sub 0}-FePt.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

The conduction and valence band offsets between a strained silicon-germanium layer and a silicon-germanium substrate are reported for arbitrary substrate and channel crystal orientations. The offsets are calculated both for the case of biaxial stress, corresponding approximately to the stress state of a thin strained channel in a planar field-effect transistor (FET), and for uniaxial stress, which is the approximate stress state for strained channels in a FinFET configuration. Significant orientation dependence is found for the conduction band offset, overall leading to the strongest electron quantum confinement in biaxial-tensile stressed channels on {100}-oriented substrates, and uniaxial-tensile stressed channels in the 〈100〉 and 〈110〉 directions. For biaxially stressed layers on {111} substrates, the conduction band offset is significantly smaller than for {100} or {110} directions. For the valence band offset, the dependence on crystal orientation is found to be small.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Towards the spatial resolution of metalloprotein charge states by detailed modeling of XFEL crystallographic diffraction

Oxidation states of individual metal atoms within a metalloprotein can be assigned by examining X-ray absorption edges, which shift to higher energy for progressively more positive valence numbers. Indeed, X-ray crystallography is well suited for such a measurement, owing to its ability to spatially resolve the scattering contributions of individual metal atoms that have distinct electronic environments contributing to protein function. However, as the magnitude of the shift is quite small, about +2 eV per valence state for iron, it has only been possible to measure the effect when performed with monochromated X-ray sources at synchrotron facilities with energy resolutions in the range 2–3 × 10 −4 (Δ E / E ). This paper tests whether X-ray free-electron laser (XFEL) pulses, which have a broader bandpass (Δ E / E = 3 × 10 −3 ) when used without a monochromator, might also be useful for such studies. The program nanoBragg is used to simulate serial femtosecond crystallography (SFX) diffraction images with sufficient granularity to model the XFEL spectrum, the crystal mosaicity and the wavelength-dependent anomalous scattering factors contributed by two differently charged iron centers in the 110-amino-acid protein, ferredoxin. Bayesian methods are then used to deduce, from the simulated data, the most likely X-ray absorption curves for each metal atom in the protein, which agree well with the curves chosen for the simulation. The data analysis relies critically on the ability to measure the incident spectrum for each pulse, and also on the nanoBragg simulator to predict the size, shape and intensity profile of Bragg spots based on an underlying physical model that includes the absorption curves, which are then modified to produce the best agreement with the simulated data. This inference methodology potentially enables the use of SFX diffraction for the study of metalloenzyme mechanisms and, in general, offers a more detailed approach to Bragg spot data reduction.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2016

Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO{sub 2} films

The electronic structure of HfO{sub 2} thin films is investigated employing resonant photoelectron spectroscopy (resPES). The detailed analysis of the O1s resonance profile enables the determination of the partial density of states for the valence and the conduction bands as well as the electronic band gap to be 6.2 eV. The position of the charge neutrality level is evaluated. Thereby, it is demonstrated that the resPES data are able to combine information both for the valence as well as for the conduction band states. In addition, evidences for intrinsic in-gap states attributed to polaronic and charge transfer states are given. Electronic charges within the atomic layer deposition-HfO{sub 2} films are identified, pointing out that the amount of charges is essential to determine the accurate position of the surface potentials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Nonperturbative parton distributions and the proton spin problem

The Lorentz contracted form of the static wave functions is used to calculate the valence parton distributions for mesons and baryons, boosting the rest frame solutions of the path integral Hamiltonian. It is argued that nonperturbative parton densities are due to excitedmultigluon baryon states. A simplemodel is proposed for these states ensuring realistic behavior of valence and sea quarks and gluon parton densities at Q{sup 2} = 10 (GeV/c){sup 2}. Applying the same model to the proton spin problem one obtains Σ{sub 3} = 0.18 for the same Q{sup 2}.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2016

Electron exchange between tin impurity U{sup –} centers in PbS{sub z}Se{sub 1–z} alloys

Using emission {sup 119mm}Sn({sup 119m}Sn) and {sup 119}Sb({sup 119m}Sn) Mössbauer spectroscopy, it is shown that impurity tin atoms in PbS{sub z}Se{sub 1–z} alloys substitute lead atoms and are two-electron donors with negative correlation energy (U{sup –} centers). It is found that the energy levels related to impurity tin atoms are in the lower half of the band gap at z ≥ 0.5 against the background of allowed valence-band states at z ≤ 0.4. The electron exchange between neutral and doubly ionized tin U{sup –} centers in partially compensated Pb{sub 0.99}Sn{sub 0.005}Na{sub 0.005}S{sub z}Se{sub 1–z} alloys is studied. The activation energy of this process decreases from 0.111(5) eV for a composition with z = 1 to 0.049(5) eV for compositions with c ≤ 0. For all z, the exchange is implemented via the simultaneous transfer of two electrons using delocalized valence-band states.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface

It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of the Fermi-level pinning energy at this interface towards the valence-band ceiling in silicon and in increasing the surface-state density at energies close to the Fermi level. In this case, a band with a peak at 0.85 eV arises on the photosensivity curves of the capacitor photovoltage, which is explained by the photoemission of electrons from the formed Au-nanoparticle electron states near the valence-band ceiling in silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence

The fundamental aspects of the electrochemical etching of lightly doped n-Si under backside illumination conditions are studied in a solution with a low HF concentration and a high concentration of hydrogen peroxide. The data obtained are compared with those for a control electrolyte containing no H{sub 2}O{sub 2}. The morphology of the self-organized macropores, their growth rate, porosity, effective valence, and the amount of dissolved silicon are examined in relation to the applied voltage. The anodization kinetics at low and high bias voltages is analyzed. It is found that, under the same illumination, the initial photocurrent in the peroxide electrolyte is approximately twice lower than in the aqueous electrolyte, which makes it possible to state that the quantum efficiency of the photocurrent is lower. As, however, the etching duration is made longer, the current in the peroxide electrolyte strongly increases to become higher than that in the control electrolyte based on H{sub 2}O. It is found that, in the presence of H{sub 2}O{sub 2}, the depthwise growth rate of the macropores increases by more than a factor of 2, and the porosity decreases. The vertical macropore channels have a diameter smaller than that for macropores formed in the aqueous electrolyte and their walls are poorly passivated, which causes branching and the formation of secondary mesopores, the number of which grows with increasing voltage. The effective valence of silicon dissolution in the presence of H{sub 2}O{sub 2} decreases to less than 2. The results are interpreted in terms of the Gerischer and Kolasinski models.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides

The results of investigating the thermoelectric properties of the bulk р-type oxyselenides Bi{sub 1 –x}Pr{sub x}CuSeO (x = 0, 0.04, 0.08) and Bi{sub 0.96}La{sub 0.04}CuSeO obtained by the solid-state reaction technique are presented. The temperature dependences of the thermopower, electrical resistivity, and thermal conductivity are measured at temperatures from room temperature to 800 K. Over the whole temperature range, a decrease in the electrical resistivity and thermopower is observed with increasing substitution level, while the thermal conductivity is almost unaffected by the substitution of rare-earth elements for bismuth. Despite the nominal valence of Bi, La, and Pr being the same, the replacement of bismuth by rare-earth ions leads to an increase in the charge-carrier concentration, which may be caused by a difference in the electronic configurations of ions, resulting in a shift of the Fermi level to the valence band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Temperature Coefficient of Movement of the Resonance Level of Iron in Pb{sub 1 – x} {sub – y}Sn{sub x}Fe{sub y}Te Alloys

The phase and elemental composition and the temperature dependences of the resistivity and Hall coefficient (temperature range 4.2 K ≤ T ≤ 300 K, magnetic fields B ≤ 0.07 T) are studied in Pb{sub 1 – x– y}Sn{sub x}Fe{sub y}Te alloys with varying matrix composition and iron-impurity concentration along single-crystal ingots synthesized by the Bridgman–Stockbarger method. The distributions of tin and iron along ingots are obtained. Anomalous temperature dependences of the Hall coefficient related to the Fermi-level pinning by the resonance level of iron located in the valence band of the alloys are found. The experimental results are analyzed within the model of transformation of the electronic structure, involving iron level movement with respect to the top of the valence band with increasing tin concentration and temperature. The temperature coefficient of the iron level movement with respect to the midgap is determined. Possible diagrams of transformation of the electronic structure with increasing temperature in alloys with the normal spectrum (0.06 ≤ x ≤ 0.35) are proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Investigation on Structural, Electronic, and Thermoelectric Properties of Half-Heusler Compounds TiXSb (X = Si, Ge) under Pressure Based on Density Functional Theory (DFT)

Based on density functional theory, structural, electronic, and thermoelectric properties of TiXSb (X = Si, Ge) at pressures of 0, 5, 10, and 15 GPa have been investigated. Structural properties at 0 GPa are in accord with other theoretical and experimental works. In electronic properties at 0 GPa, Ti-d{sup 2} orbitals have main contributions near the Fermi energy in valence band and in conduction band. According to our calculations, as shown in diagrams of electronic density of states at different pressures, peaks in the valence band move to more negative energies when the pressure increases. However, in the conduction band, they move to more positive energies. This occurs as a result of decreasing stability of the system due to increase in pressure. In this study, we also calculated the thermoelectric properties such as Seebeck coefficient, thermal conductivity divided by relaxation time, electrical conductivity divided by relaxation time, and figure of merit, at pressures of 0, 5, 10, and 15 GPa, in the temperature range of 100–900 K (contribution of phononic thermal conductivity was ignored as low).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Effects of composition and pressure on electronic states of iron in bridgmanite

Electronic states of iron in the lower mantle's dominant mineral, (Mg,Fe,Al)(Fe,Al,Si)O 3 bridgmanite, control physical properties of the mantle including density, elasticity, and electrical and thermal conductivity. However, the determination of electronic states of iron has been controversial, in part due to different interpretations of Mössbauer spectroscopy results used to identify spin state, valence state, and site occupancy of iron. We applied energy-domain Mössbauer spectroscopy to a set of four bridgmanite samples spanning a wide range of compositions: 10–50% Fe/total cations, 0–25% Al/total cations, 12–100% Fe 3+ /total Fe. Measurements performed in the diamond-anvil cell at pressures up to 76 GPa below and above the high to low spin transition in Fe 3+ provide a Mössbauer reference library for bridgmanite and demonstrate the effects of pressure and composition on electronic states of iron. Results indicate that although the spin transition in Fe 3+ in the bridgmanite B-site occurs as predicted, it does not strongly affect the observed quadrupole splitting of 1.4 mm/s, and only decreases center shift for this site to 0 mm/s at ~70 GPa. Thus center shift can easily distinguish Fe 3+ from Fe 2+ at high pressure, which exhibits two distinct Mössbauer sites with center shift ~1 mm/s and quadrupole splitting 2.4–3.1 and 3.9 mm/s at ~70 GPa. Correct quantification of Fe 3+ /total Fe in bridgmanite is required to constrain the effects of composition and redox states in experimental measurements of seismic properties of bridgmanite. Furthermore, in Fe-rich, mixed-valence bridgmanite at deep-mantle-relevant pressures, up to ~20% of the Fe may be a Fe 2.5+ charge transfer component, which should enhance electrical and thermal conductivity in Fe-rich heterogeneities at the base of Earth's mantle.

58 GEOSCIENCES↗
DOE OSTI2023

Metal-ligand interactions in a redox active ligand system. Electrochemistry and spectroscopy of [M(dipyvd) 2 ] n+ (M=Zn, Ni, n =0, 1, 2)

Reaction of nickel and zinc triflates with the tridentate leucoverdazyl 1-isopropyl-3,5-di (2'-pyridyl)-6-oxo-2H-tetrazine (dipyvdH) and triethylamine resulted in the neutral coordination compounds M(dipyvd) 2 (M = Ni,Zn). In acetonitrile, both compounds undergo two one electron oxidation processes, Zn (dipyvd) 2 at -0.28 V and -0.12 V and Ni(dipyvd) 2 at -0.32 V and -0.15 V vs ferrocene/ferricenium. Oxidations are ligand based resulting in an intermediate mixed valence species and a cationic bis(verdazyl) compound respectively. Oxidation of the ligand changes a localized, antiaromatic, non-planar 8π electron anion to a planar, delocalized 7π electron radical. The change in ligand structure results in an increase in the octahedral ligand field splitting from 10,500 cm –1 to ~13,000 cm –1 , suggesting an increase in the pi acceptor character of the ligand. In the mixed valence species, spectroscopic data suggests minimal interaction between ligands mediated by the metal center; i.e., these are class I-II systems in the Robin-Day classification.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗