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At least 991 records · Page 55

Intrinsic chemical reactivity of solid-electrolyte interphase components in silicon–lithium alloy anode batteries probed by FTIR spectroscopy

Herein we report the solid reaction products from the chemical reaction of aprotic battery electrolyte and three purported components of the Si-based anode SEI : SiO 2 nanoparticles (NPs), lithium silicate (Li x SiO y ) powders, and Si NPs. We use FTIR and classical molecular dynamics/density functional perturbation theory to assess the solid products remaining with these model materials after exposure to electrolyte. The absence of electrochemical bias provides a view of the chemical speciation resulting from early-stage chemical reactivity during battery assembly as well as under open circuit storage conditions. We believe these species represent the initial stages of SEI growth and predict they likely drive subsequent chemical and electrochemical reactions by controlling molecular interactons at the Si active material interface. We find that nominally equivalent materials react differently even before any electrochemistry is performed (e.g., acidic SiO 2 dissolves whereas alkaline SiO 2 is relatively robust), and derive new understanding of the chemical species that could and could not form stable SEI components in Si-based anodes. These results can be used to inform how to passivate Si anode surfaces and potentially generate an artificially engineered SEI that would be stable and enable next-generation battery anodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon

Monocrystalline Si solar cells are fabricated from Czochralski (Cz) Si, which contains 10 17 –10 18 cm -3 oxygen atoms. Cz Si undergoes degradation during high-temperature thermal processing steps, such as dopant diffusion to form the p - n junction. This degradation in the bulk minority carrier lifetime can be related to the formation of oxygen precipitates. We found that a high-temperature annealing process known as tabula rasa (TR) not only mitigates process-induced degradation via oxygen precipitate nuclei dissolution, but also modifies subsequent light-induced degradation. We report on the bulk carrier lifetime of n - and p -type Cz Si after TR, which homogenizes the interstitial oxygen in the bulk Si to its monoatomic form in either an N 2 or O 2 environment. A control sample, which was not subjected to a TR processing step, experienced severe process-induced degradation during a boron emitter thermal budget as oxygen precipitates were formed in the Si bulk. These precipitates could be imaged using photoluminescence. Additionally, samples that underwent a TR processing step prior to the boron emitter thermal budget show efficient gettering of metallic impurities compared to the control sample, which showed a decline in the implied open-circuit voltage after the gettering step. Furthermore, modification of the interstitial oxygen bonding by TR had a strong effect on the light-induced degradation kinetics. Instead of a typically observed monotonic decrease, minority carrier lifetime increases first, followed by a nonmonotonic decrease over a ~20 h period. Finally, we conclude that by modifying the interstitial oxygen bonding via TR pretreatment, p -type Cz Si wafers become substantially resistant to harsh solar cell processes and strongly modified light-induced degradation, which would open alternative ways to mitigate this degradation mechanism.

14 SOLAR ENERGY↗

Degradation of Monocrystalline Silicon Photovoltaic Modules From a 10-Year-Old Rooftop System in Florida

A system of 180 monocrystalline aluminum back-surface field modules were installed in Cocoa, Florida, for 10 years. In total, 156 modules are characterized and compared to 3 controls. Power degradation rates vary between – 0.14% to – 3.22% per year, with median and average rates of –0.92% and –1.05% per year, respectively. The losses are primarily resistive with minor optical and recombination loss contributions. Electroluminescence imaging shows a characteristic pattern, which is shown to be resistive in nature when compared to photoluminescence. Resistive losses are due to corrosion of the rear contact Ag/solder interface and, to a much lesser degree, gridline Ag oxidation. Moisture ingress through the backsheet is likely responsible for mediating corrosion. Optical losses are due mostly to a combination of antireflection coating degradation, minor encapsulant browning, and delamination. Minor front contact corrosion may contribute to recombination. Furthermore, this study expands upon previous work on this vintage of the module by examining a large sample set, comprehensive characterization including techniques not previously used on these modules, and a comparison between two other systems of different climates.

14 SOLAR ENERGY↗

Silicon Carbide Inverter for Off-Road Heavy-Duty Applications: The Importance of Thermal and Thermomechanical Design in Power Electronics Packaging

Electrification of drivetrain systems is now seen as a major opportunity by the transportation industry across the globe to reduce the greenhouse gas emissions and revolutionize the travel patterns of millions of people. The cumulative number of plug-in hybrid and battery electric vehicles (EVs) sold in the United States has now surpassed 2 million in 2021, according to the International Energy Agency. The introduction of EVs in different classes of passenger vehicles and the continued drop in prices spurred by government incentives have attracted the attention of consumers despite certain barriers, such as higher initial cost and range anxiety. In the United States, the EV market share is now growing at an exponential pace, with the domestic automakers allocating a lion's share of new and future car sales to EVs. Additionally, different market studies project decreasing cost and rising sales of medium- and heavy-duty electric trucks. Although electrification initiatives are strongly pursued in the on-road passenger vehicle market, off-highway sectors, such as construction, mining, and agriculture, are also gradually implementing electric drivetrain technologies in their machineries. As EVs grow in popularity on a global scale, innovative drivetrain technologies must meet the increasing energy demand by significantly increasing system efficiency.

ADVANCED PROPULSION SYSTEMS↗

Bridging Python to Silicon: The SODA Toolchain

Systems performing scientific computing, data analysis, and machine learning tasks have a growing demand for application-specific accelerators that can provide high computational performance while meeting strict size and power requirements. However, the algorithms and applications that need to be accelerated are evolving at a rate that is incompatible with manual design processes based on hardware description languages. Agile hardware design tools based on compiler techniques can help by quickly producing an application-specific integrated circuit (ASIC) accelerator starting from a high-level algorithmic description. Here, we present the software-defined accelerator (SODA) synthesizer, a modular and open-source hardware compiler that provides automated end-to-end synthesis from high-level software frameworks to ASIC implementation, relying on multilevel representations to progressively lower and optimize the input code. Our approach does not require the application developer to write any register-transfer level code, and it is able to reach up to 364 giga floating point operations per second (GFLOPS)/W efficiency (32-bit precision) on typical convolutional neural network operators.

97 MATHEMATICS AND COMPUTING↗

Trap-Assisted Dopant Compensation Prevents Shunting in poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Interdigitated back contact (IBC) solar cells achieve the highest efficiencies of single-junction architectures, but complicated patterning of the rear fingers and spreading of dopants during processing inhibit their mainstream adoption due to concerns of shunting between the IBC fingers. One method of simplifying patterning at the rear is by using contact masks combined with plasma-enhanced chemical vapor deposition (PECVD) or ion implantation. However, the intrinsic isolation region becomes contaminated during high-temperature annealing by lateral diffusion of dopants and during masked PECVD by spreading of dopant radicals through region between the mask and the substrate. Despite this contamination, we show through scanning spreading resistance microscopy and Kelvin probe force microscopy that a ~20 µm wide compensating region exists with high enough resistivity to prevent shunting. We model this p-i-n poly-Si system using two simulation models: a simple resistor model considering only the capture of charge carriers by trap defects in poly-Si to reduce the conductivity, and a more refined 1-dimensional finite element model using Poisson’s equation, drift-diffusion equations, and recombination of carriers. Using this model, we show that high defect density significantly decreases the current across the region between the p- and n-type fingers, preventing shunting.

atom probe↗

Spectroscopic Investigation of Light-Induced Degradation Paramagnetic Defect in Czochralski Silicon

We report on the electron paramagnetic resonance (EPR) spectra of Cz and FZ Si in different stages of light-induced degradation. Firstly, we show that the paramagnetic signal at low temperature (10K) is dependent on the state of light-induced degradation performed at room temperature and on the sample doping. The light-degraded state in p-Cz Si shows strong, sharp paramagnetic defect signatures compared to samples in the annealed state. When an excitation light is applied during the EPR measurement, additional structures appear in the spectra. In contrast, the wide EPR active signature related to boron interaction with lattice, is present in the annealed state but diminishes after light exposure. Finally, we show that the degraded paramagnetic signal returns when annealed samples are exposed to ambient light. We suggest that these changes in the electron paramagnetic resonance spectra is related to the boron-oxygen defect that causes light-induced degradation.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Effect of Dopant Compensation on the Conductivity of the Intrinsic poly-Si Isolation Region in Passivated IBC Silicon Solar Cells

The performance of IBC solar cells depends on the ability of this region to electrically isolate the doped fingers so that shunting does not occur and reduce the cell fill factor. We report on simulations which model the region between the p- and n-type poly-Si fingers of interdigitated back contact (IBC) solar cells as a series of resistors extending from one doped finger to the other. We demonstrate that the existence of a well compensated region between the doped fingers is enough to prevent shunting and loss of cell performance, despite contamination of dopants from the opposing dopant fingers. We show through these simulations that a net doping concentration below ~1018 cm-3 will enable a high resistivity and identify the conditions under which this highly resistive region forms despite imperfect finger edges. Additionally, we apply this analysis to tails measured by time-of-flight secondary ion mass spectrometry and confirm this hypothesis for our experimentally measured tails.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

degradation↗

Measurement of Dielectric Loss in Silicon Nitride at Centimeter and Millimeter Wavelengths

This work presents a suite of measurement techniques for characterizing the dielectric loss tangent across a wide frequency range from similar to 1 GHz to 150 GHz using the same test chip. In the first method, we fit data from a microwave resonator at different temperatures to a model that captures the two-level system (TLS) response to extract and characterize both the real and imaginary components of the dielectric loss. The inverse of the internal quality factor is a second measure of the overall loss of the resonator, where TLS loss through the dielectric material is typically the dominant source. The third technique is a differential optical measurement at 150 GHz. The same antenna feeds two microstrip lines with different lengths that terminate in two microwave kinetic inductance detectors (MKIDs). The difference in the detector response is used to estimate the loss per unit length of the microstrip line. Our results suggest a larger loss for SiNx at 150 GHz of tan delta similar to 4 x 10(-3) compared to 2.0 x 10(-3) and greater than or similar to 1 x 10(-3) measured at similar to 1 GHz using the other two methods. These measurement techniques can be applied to other dielectrics by adjusting the microstrip lengths to provide enough optical efficiency contrast and other mm/sub-mm frequency ranges by tuning the antenna and feedhorn accordingly.

Dielectrics loss↗

Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites

Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells.

14 SOLAR ENERGY↗

Examining CO 2 as an Additive for Solid Electrolyte Interphase Formation on Silicon Anodes

In this study, we demonstrate that the addition of CO 2 to a standard 1.0 M LiPF 6 3:7 wt% ethylene carbonate:ethyl methyl carbonate electrolyte results in the formation of a thinner insoluble solid electrolyte interphase (SEI) that is dominated by the presence of LiF. In contrast, cells without CO 2 result in a thicker insoluble SEI layer containing more organic constituents. The CO 2 is incorporated in the dimethyl carbonate soluble part of the SEI composed primarily of polymeric poly(ethylene oxide) (PEO) on the surface of a thin inorganic layer. This combination of properties from CO 2 addition provides an improved cycling performance through the reduction of irreversible side reactions, leading to higher coulombic efficiency. The results indicate that CO 2 incorporates into the SEI and plays a role similar to additives like fluorinated ethylene carbonate and vinylene carbonate with respect to polymeric components.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Cost Effective 6.5% Silicon Steel Laminate for Electric Machines

Iowa State University teamed with United Technologies Research Center and the University of Delaware and demonstrated a high switching frequency non-rare earth permanent magnet motor. A prototype motor with 400 Hz switching frequency, dummy MnBi permanent magnet with 8 MGOe energy density, and 6.5%Si steel as the laminate materials was designed, built, and tested. The performance of the prototype met the expectations showing a higher frequency motor enabled by 6.5%Si steel is a viable approach to meet DOE 2022 cost and performance targets for electric vehicle drive. Adoption of 6.5%Si steel will result in 3% improvement in energy conversion efficiency of the soft magnetic materials. In addition, the ability to use non-rare earth magnet for high power density application effectively mitigate the risk of EV traction motor from the rising rare earth price.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Benchmark Analysis for the Optical Dilatometry Method Using Silicon Carbide Temperature Monitors

The main objective of this project was to conduct a benchmark analysis for the optical dilatometry method by using NSUF’s SiC temperature monitors: two (2) SiC temperature monitors provided by NSUF’s BSU-8242 experiment and two (2) SiC temperature monitors provided by NSUF’s GE-Hitachi experiment. Per the BSU-8242 experiment, KGT-3597 and KGT-3591 had a design temperature of 400°C and an exposure of 3 dpa. Per the GE-Hitachi experiment, KGT-3341 and KGT-3336 had a design temperature of 290°C +/- 50°C and an exposure of 0.5–1 dpa. The KGT-3336 SiC monitor was split into two pieces during the decontamination process, making the dilatometry method the only way to analyze both those pieces. The BSU-8242 monitors revealed peak irradiation temperatures under the design temperature, and the GE-Hitachi monitors revealed peak irradiation temperatures within the design temperature range. The optical dilatometry method measured the peak irradiation temperature of BSU-8242 KGT-3597 to be 330°C, while the resistivity method measured the peak irradiation temperature of BSU-8242 KGT-3591 to be 320°C +/- 20°C. The optical dilatometry method measured the peak irradiation temperatures of the pieces of GE-Hitachi KGT-3336 to be 260°C (for the larger piece) and 220°C (for the smaller piece), while the resistivity method measured the peak irradiation temperature of GE-Hitachi KGT-3341 to be 300°C, with an accuracy range of -50°C to +20°C. Both methods of SiC temperature monitor analysis produced very similar peak irradiation temperatures for each pair of SiC passive monitors from the two experiments, BSU-8242 and GE-Hitachi. The results show dilatometry method to be a reliable and less time-intensive process for determining irradiation temperatures from passive SiC thermometry.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Silicon Carbide Composite Cladding Qualification

This report examines the process to qualify a new fuel-cladding type focusing on the data requirements and types of irradiation testing necessary to meet the regulatory burden and related guidance applicable to fuel qualification of accident-tolerant fuel. The report considers the use of accelerated fuel qualification techniques and lead-test specimen programs that may shorten the timeline for qualifying fuel for use in a nuclear reactor at the desired burnup. The assessment framework particularly emphasizes the identification of key fuel manufacturing parameters, the specification of a fuel performance envelope to inform testing requirements, the use of evaluation models in the fuel qualification process, and the assessment of the experimental data used to develop and validate the empirical models and empirical safety criteria.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Wafer-Free Crystalline Silicon Solar Cells (CRADA Final Report)

This CRADA project, based on the DOE Solar Energy Technologies Office (SETO) Solar Prize Voucher program, helped Leap Photovoltaics to develop methodologies to immobilize Si particles by permanently attaching them to an Al-coated substrate and thereby forming carrier-selective electrical contacts to the Si particles. The bigger goal was to help Leap Photovoltaics develop these immobilized and contacted particle arrays into relatively efficient, inexpensive, and industrially relevant solar cells. By using Si particles instead of wafers in a solar cell absorber layer, one can avoid costs associated with growing monocrystalline Si ingots, then diamond-sawing them into wafers, then processing wafers into cells – a mainstream practice in today's high-efficiency Si cell and module technology. Monocrystalline or polycrystalline Si particles can be obtained in various ways: for example, Si kerf from wafer sawing is monocrystalline; recycled Si cell wafers can be ball-milled into particles; particles can be grown using various gas-phase techniques (mostly from SiH4). These Si particles can be assembled onto a substrate and serve as an absorber layer for the solar cell, absorbing photons to generate photocarriers. The challenge with this technique is to collect photocarriers from individual Si particles, with separation of photogenerated electrons to the negative cell’s electrode and positive photogenerated holes to the positive electrode. Therefore, each particle must have two isolated, carrier-selective contacts: one for electrons and one for holes. Plus, particles need to be immobilized onto a solid substrate. The goal of this work was focused on the immobilization of Si particles and creating hole-selective contact to them at the same time, using industrially relevant Si photovoltaic (PV) cell technology: screen printing of Al back-surface field electrodes. This is used in the mainstream Propane Education and Research Council (PERC) technology for hole-collecting contacts at the back of the cell. The work performed at NREL consisted of screen printing of Al metal paste on substrates, spreading Si particles onto it, and thermally processing the structures to form hole-collecting contacts. The final structures were investigated by scanning electron microscopy (SEM) after focused ion beam (FIB) cross-sectioning and polishing. The work was done jointly by NREL staff and Leap Photovoltaics (Leap PV) employees stationed at NREL. The samples were then taken to Leap PV for further processing. Training the Leap PV employee on various NREL techniques (laser cutting, screen printing, thermal processing, characterization) was part of the scope.

14 SOLAR ENERGY↗

X-ray Laue Microdiffraction and Raman Spectroscopic Investigation of Natural Silicon and Moissanite

Moissanite, SiC, is an uncommon accessory mineral that forms under low oxygen fugacity. Here, we analyze natural SiC from a Miocene tuff-sandstone using synchrotron Laue microdiffraction and Raman spectroscopy, in order to better understand the SiC phases and formation physics. The studied crystals of SiC consist of 4H- and 6H-SiC domains, formed from either, continuous growth or, in one case, intergrown, together with native Si. The native Si is polycrystalline, with a large crystal size relative to the analytical beam dimensions (>1–2 μm). We find that the intergrown region shows low distortion or dislocation density in SiC, but these features are comparatively high in Si. The distortion/deformation observed in Si may have been caused by a mismatch in the coefficients of thermal expansion of the two materials. Raman spectroscopic measurements are discussed in combination with our Laue microdiffraction results. Our results suggest that these SiC grains likely grew from an igneous melt.

58 GEOSCIENCES↗