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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55

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DOE OSTI2011

Room Temperature Ferromagnetism in Cu Doped ZnO Thin Films

We report on the growth of Cu doped ZnO thin films for different Cu concentration from 0.1%, to10% by RF magnetron sputtering. The X-ray diffraction study has shown single phase wurtzite type ZnO thin films with no evidence of copper/copper oxide or any other secondary phases. Room temperature ferromagnetism was observed in RF sputtered Cu doped ZnO films with magnetic moment per Cu atom first increasing and then decreasing with an increasing Cu content. Decrease of band gap with Cu doping, indicating strong p-d mixing of O and Cu is clear by the absorption spectroscopy study. The surface morphology by AFM of pure and Cu doped ZnO thin films show average grain size of 110nm and RMS surface roughness of 2.15 nm.

36 MATERIALS SCIENCE↗

DOE OSTI2011

Room temperature detection of NO{sub 2} using InSb nanowire

Room temperature detection of NO{sub 2} down to one part-per-million (ppm) using single crystalline n-type InSb nanowires (NWs) chemiresistive gas sensor is presented. These sensors were synthesized and fabricated by the combination of chemical vapor deposition and dielectrophoresis alignment techniques. The sensor devices showed an increase in resistance upon exposure to successive increments of NO{sub 2} concentration up to 10 ppm. The reduction in conductance of n-type InSb NWs when exposed to NO{sub 2} is made possible due to the charge transfer from the InSb NW surface to the adsorbed electron acceptor NO{sub 2} molecules. The demonstrated results suggest InSb NW as a promising candidate in sensing applications as well as being environmental friendly over existing arsenic and/or phosphorous-based III-V NW sensors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2011

Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6 x 10{sup 19} cm{sup -3}).

36 MATERIALS SCIENCE↗

DOE OSTI2011

Vibrational Spectroscopic Studies on Some Double Alkali Tungstates Belonging to Orthorhombic Class at Room Temperature

Room temperature IR and Raman spectra of rubidium lithium tungstate and sodium lithium tungstates belonging to double alkali tungstate family are investigated using group theoretical methods. Observed internal and lattice modes in both systems studied are assigned. Analysis of spectral behavior reveals that the effect of site potential around tungstates ion is weak and the factor group splitting is operative. Differences in the lattice mode mixing and splitting of internal modes is influenced by the statistical ordering between two alkali ions having large and small ionic radii and is explained using size and charge effect observed earlier in scheelite type of structure. Thus, vibrational spectroscopic analysis may be a tool to understand the alkali ion ordering in double alkali systems.

36 MATERIALS SCIENCE↗

DOE OSTI2011

Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films

Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to V{sub Zn}, such as V{sub Zn} and Li{sub i}-N{sub O}-V{sub Zn} complex, well supported by first-principles calculations. The incorporation of N{sub O} can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Li{sub i} to form Li{sub i}-N{sub O} complex, which restrains the compensation of Li{sub i} for V{sub Zn} and makes the ZnO:(Li, N) conduct in p-type.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Deep-UV optical gain has been demonstrated in Al{sub 0.7}Ga{sub 0.3}N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 {+-} 9 cm{sup -1} has been measured and the transparency threshold of 5 {+-} 1 {mu}J/cm{sup 2} was experimentally determined, corresponding to 1.4 x 10{sup 17} cm{sup -3} excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer across several facets. We combined both topography and current mappings to confirm that the facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band gap evidenced in this study, combined with the known Neel temperature well above room temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high temperature semiconductor spintronics based on antiferromagnets.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Stress-induced VO{sub 2} films with M2 monoclinic phase stable at room temperature grown by inductively coupled plasma-assisted reactive sputtering

We report on growth of VO{sub 2} films with M2 monoclinic phase stable at room temperature under atmospheric pressure. The films were grown on quartz glass and Si substrates by using an inductively coupled plasma-assisted reactive sputtering method. XRD-sin{sup 2}{Psi} measurements revealed that the films with M2 phase are under compressive stress in contrast to tensile stress of films with M1 phase. Scanning electron microscopy observations revealed characteristic crystal grain aspects with formation of periodical twin structure of M2 phase. Structural phase transition from M2 to tetragonal phases, accompanied by a resistance change, was confirmed to occur as the temperature rises. Growth of VO{sub 2} films composed of M2 phase crystalline is of strong interest for clarifying nature of Mott transition of strongly correlated materials.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Demonstration of charge breeding in a compact room temperature electron beam ion trap

For the first time, a small room-temperature electron beam ion trap (EBIT), operated with permanent magnets, was successfully used for charge breeding experiments. The relatively low magnetic field of this EBIT does not contribute to the capture of the ions; single-charged ions are only caught by the space charge potential of the electron beam. An over-barrier injection method was used to fill the EBIT's electrostatic trap with externally produced, single-charged potassium ions. Charge states as high as K{sup 19+} were reached after about a 3 s breeding time. The capture and breeding efficiencies up to 0.016(4)% for K{sup 17+} have been measured.

43 PARTICLE ACCELERATORS↗

DOE OSTI2012

Thermochromic effect at room temperature of Sm{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

Sm{sub 0.5}Ca{sub 0.5}MnO{sub 3} thermochromic thin films were synthesized using dc reactive magnetron co-sputtering and subsequent annealing in air. The film structure was studied by x-ray diffraction analysis. To validate the thermochromic potentiality of Sm{sub 0.5}Ca{sub 0.5}MnO{sub 3}, electrical resistivity and infrared transmittance spectra were recorded for temperatures ranging from 77 K to 420 K. The temperature dependence of the optical band gap was estimated in the near infrared range. Upon heating, the optical transmission decreases in the infrared domain showing a thermochromic effect over a wide wavelength range at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2012

Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

The effect of in-situ exposure of n-GaN damaged by Cl{sub 2} plasma to atomic hydrogen (H radicals) at room temperature was investigated. We found that the PL intensities of the band-edge emission, which had been drastically reduced by plasma-beam irradiation at a Cl ion dose of 5 Multiplication-Sign 10{sup 16} cm{sup -2}, recovered to values close to those of as-grown samples after H radical exposure at a dose of 3.8 Multiplication-Sign 10{sup 17} cm{sup -2}. XPS revealed the appearance of a peak at a binding energy of 18.3 eV, which is tentatively assigned to Ga-H, and confirmed the removal of Cl after H radical exposure.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs

We report room temperature electronic and thermoelectric properties of Si-doped In{sub 0.52}Ga{sub 0.48}Bi{sub y}As{sub 1-y} with varying Bi concentrations. These films were grown epitaxially on a semi-insulating InP substrate by molecular beam epitaxy. We show that low Bi concentrations are optimal in improving the conductivity, Seebeck coefficient, and thermoelectric power factor, possibly due to the surfactant effects of bismuth. We observed a reduction in thermal conductivity with increasing Bi concentration, which is expected because of alloy scattering. We report a peak ZT of 0.23 at 300 K.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature

In this work, we investigate the processes leading to the room-temperature growth of silicon carbide thin films by supersonic molecular beam epitaxy technique. We present experimental data showing that the collision of fullerene on a silicon surface induces strong chemical-physical perturbations and, for sufficient velocity, disruption of molecular bonds, and cage breaking with formation of nanostructures with different stoichiometric character. We show that in these out-of-equilibrium conditions, it is necessary to go beyond the standard implementations of density functional theory, as ab initio methods based on the Born-Oppenheimer approximation fail to capture the excited-state dynamics. In particular, we analyse the Si-C{sub 60} collision within the non-adiabatic nuclear dynamics framework, where stochastic hops occur between adiabatic surfaces calculated with time-dependent density functional theory. This theoretical description of the C{sub 60} impact on the Si surface is in good agreement with our experimental findings.

36 MATERIALS SCIENCE↗

DOE OSTI2013

On the magnetic field signal radiated by an atmospheric pressure room temperature plasma jet

In this paper, the magnetic field signal radiated from an atmospheric pressure room temperature plasma plume is measured. It's found that the magnetic field signal has similar waveform as the current carried by the plasma plume. By calibration of the magnetic field signal, the plasma plume current is obtained by measuring the magnetic field signal radiated by the plasma plume. In addition, it is found that, when gas flow modes changes from laminar regime to turbulence regime, the magnetic field signal waveforms appears different, it changes from a smooth curve to a curve with multiple spikes. Furthermore, it is confirmed that the plasma plume generated by a single electrode (without ground electrode) plasma jet device carries higher current than that with ground electrode.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2013

Highly oriented {delta}-Bi{sub 2}O{sub 3} thin films stable at room temperature synthesized by reactive magnetron sputtering

We report the synthesis by reactive magnetron sputtering and structural characterization of highly (111)-oriented thin films of {delta}-Bi{sub 2}O{sub 3}. This phase is obtained at a substrate temperature of 150-200 Degree-Sign C in a narrow window of O{sub 2}/Ar ratio in the sputtering gas (18%-20%). Transmission electron microscopy and x-ray diffraction reveal a polycrystalline columnar structure with (111) texture. The films are stable from room temperature up to 250 Degree-Sign C in vacuum and 350 Degree-Sign C in ambient air.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Long wavelength (>1.55 {mu}m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 {mu}m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2013

Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO thin films grown by molecular beam epitaxy. Very low Mn doping concentration is investigated, and the measured magnetic moment is much larger than what is expected for an isolated ion based on Hund's rules. The ferromagnetic behavior evolves with Mn concentration. Both magnetic anisotropy and anomalous Hall effect confirm the intrinsic nature of ferromagnetism. While the Mn dopant plays a crucial role, another entity in the system is needed to explain the observed large magnetic moments.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature

The room temperature deposited ZnO:H thin films having high conductivity of 500 Ohm-Sign {sup -1} cm{sup -1} and carrier concentration reaching 1.23 Multiplication-Sign 10{sup 20} cm{sup -3} were reactively sputter deposited on glass substrates in the presence of O{sub 2} and 5% H{sub 2} in Ar. A metal-semiconductor transition at 165 K is induced by the increasing hydrogen incorporation in the films. Hydrogen forms shallow donor complex with activation energy of {approx}10-20 meV at oxygen vacancies (V{sub O}) leading to increase in carrier concentration. Hydrogen also passivates V{sub O} and V{sub Zn} causing {approx}4 times enhancement of mobility to 25.4 cm{sup 2}/V s. These films have potential for use in transparent flexible electronics.

36 MATERIALS SCIENCE↗