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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Relaxation mechanisms, structure and properties of semi-coherent interfaces

In this work, using the Cu–Ni (111) semi-coherent interface as a model system, we combine atomistic simulations and defect theory to reveal the relaxation mechanisms, structure, and properties of semi-coherent interfaces. By calculating the generalized stacking fault energy (GSFE) profile of the interface, two stable structures and a high-energy structure are located. During the relaxation, the regions that possess the stable structures expand and develop into coherent regions; the regions with high-energy structure shrink into the intersection of misfit dislocations (nodes). This process reduces the interface excess potential energy but increases the core energy of the misfit dislocations and nodes. The core width is dependent on the GSFE of the interface. The high-energy structure relaxes by relative rotation and dilatation between the crystals. The relative rotation is responsible for the spiral pattern at nodes. The relative dilatation is responsible for the creation of free volume at nodes, which facilitates the nodes’ structural transformation. Several node structures have been observed and analyzed. In conclusion, the various structures have significant impact on the plastic deformation in terms of lattice dislocation nucleation, as well as the point defect formation energies.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Patterned surface anchoring of nematic droplets at miscible liquid–liquid interfaces

We report on the internal configurations of droplets of nematic liquid crystals (LCs; 10–50 μm-in-diameter; comprised of 4-cyano-4'-pentylbiphenyl and 4-(3-acryloyloxypropyloxy)benzoic acid 2-methyl-1,4-phenylene ester) sedimented from aqueous solutions of sodium dodecyl sulfate (SDS) onto interfaces formed with pure glycerol. We observed a family of internal LC droplet configurations and topological defects consistent with a remarkably abrupt transition from homeotropic (perpendicular) to tangential anchoring on the surface of the LC droplets in the interfacial environment. Calculations of the interdiffusion of water and glycerol at the aqueous–glycerol interface revealed the thickness of the diffuse interfacial region of the two miscible liquids to be small (0.2–0.5 μm) compared to the diameters of the LC droplets on the experimental time-scale (15–120 minutes), leading us to hypothesize that the patterned surface anchoring was induced by gradients in concentration of SDS and glycerol across the diameter of the LC droplets in the interfacial region. This hypothesis received additional support from experiments in which the time of sedimentation of the LC droplets onto the interface was systematically increased and the droplets were photo-polymerized to preserve their configurations: the configurations of the LC droplets were consistent with a time-dependent decrease in the fraction of the surface area of each droplet exhibiting homeotropic anchoring. Specifically, LC droplets with <10% surface area with tangential anchoring exhibited a bulk point defect within the LC droplet, whereas droplets with >10% surface area with tangential anchoring exhibited a boojum defect within the tangential region and a disclination loop separated the regions with tangential and homeotropic anchoring. The topological charge of these LC droplet configurations was found to be consistent with the geometrical theorems of Poincaré and Gauss and also well-described by computer simulations performed by minimization of a Landau–de Gennes free energy. Additional experimental observations (e.g., formation of “Janus-like” particles with one hemisphere exhibiting tangential anchoring and the other perpendicular anchoring) and simulations (e.g., a size-dependent set of LC droplet configurations with <10% surface area exhibiting tangential anchoring) support our general conclusion that placement of LC droplets into miscible liquid–liquid interfacial environments with compositional gradients can lead to a rich set of LC droplet configurations with symmetries and optical characteristics that are not encountered in LC droplet systems in homogeneous, bulk environments. Finally, our results also reveal that translocation of LC droplets across liquid–liquid interfaces can define new transition pathways that connect distinct configurations of LC droplets.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes

Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Optimization of SiV Defect Yield in Diamond Substrates

Color centers (defect complexes such as SiV) in diamond have shown potential in fields ranging from metrology, cybersecurity to quantum computation. Demonstrations in these fields have pushed the envelope of state-of-the-art operations – for example, single photon sources (SPS) making use of SiV centers in diamond for quantum key distribution have demonstrated all the requirements for SPS operation including: (1) stable operation with second correlation function <<1, (2) electrically driven single photon emission and (3) compatibility with frequenc y conversion to telecommunication frequencies. To-date, however, all these demonstrations have been on lab-scale one-off devices. The key question behind how to deterministically fabricate these devices, namely activation yield has been overlooked. For context, Si based semiconductor devices are hugely successful because we have a high activation yield for implanted dopants. This is not yet true for diamond color centers. As currently understood, the color center yield is dominated by a lack of vacancies in the immediate area of the implantation. We propose to optimize the activation yield of color center using a combination of (1) focused single ion implantation with in-situ detection to count the number of implanted Si ions and (2) localized point defect (vacancy) creation using a focused Li ion beam to improve the yield. These experiments build on the unique capabilities of the SNL nanoImplanter (nI) to produce focused ion beam with spatial resolution of < 10 nm of both Si and Li ions. This work will also leverage our world-leading single ion implantation and detection capabilities.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effect of Fe Doping and O Vacancies on the Magnetic Properties of Rutile TiO{sub 2}

Magnetism sources of Fe doping and O vacancies, which coexist in the presence of rutile TiO{sub 2}, are controversial and require a resolution. The effects of Fe doping and point defect on the magnetism of rutile TiO{sub 2} were studied using geometry optimization and energy calculation based on the first principle generalized gradient approximation + U method (GGA+U) of density functional theory. Fe/Vo ratio is 1:1 in rutile TiO{sub 2}. The next closest distance between Fe and Vo is 0.04082 nm. The formation energy of the doping system is the smallest. This doping system has the highest stability. The coexistence of Fe doping and O vacancy achieved ferromagnetic long-range order. The different ratios of Fe/Vo are 1:1, 1:2, 2:1, and 2:2. The magnetic properties of the doping system are significantly different. At a ratio of 2:1, the magnetic moment is the largest among all doping systems. Moreover, the Curie temperature of the doping system can be higher than room temperature. These findings can obtain dilute magnetic semiconductors with potential application value. At a Fe/V{sub O} ratio of 2:2, the Ti{sub 14}Fe{sub 2}O{sub 30} system produces a half-metallic property of 100% electron spin polarizability. This is the most valuable application for designing and preparing novel spintronic injection source dilute magnetic semiconductors. The magnetic source is mainly mediated by the holes generated by Fe doping and O vacancy complexes, thereby causing the spin polarization double exchange effect on the electron of Ti–3d orbital atoms near the O vacancy, O–2p electron orbital, and Fe–3d electron orbital. This feature is consistent with the following theories: the mean field approximation and the double exchange mechanism theories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

High Thermoelectric Performance in Supersaturated Solid Solutions and Nanostructured n-Type PbTe-GeTe

Sb-doped and GeTe-alloyed n-type thermoelectric materials that show an excellent figure of merit ZT in the intermediate temperature range (400–800 K) are reported. The synergistic effect of favorable changes to the band structure resulting in high Seebeck coefficient and enhanced phonon scattering by point defects and nanoscale precipitates resulting in reduction of thermal conductivity are demonstrated. The samples can be tuned as single-phase solid solution (SS) or two-phase system with nanoscale precipitates (Nano) based on the annealing processes. The GeTe alloying results in band structure modification by widening the bandgap and increasing the density-ofstates effective mass of PbTe, resulting in significantly enhanced Seebeck coefficients. The nanoscale precipitates can improve the power factor in the low temperature range and further reduce the lattice thermal conductivity (κ lat ). Specifically, the Seebeck coefficient of Pb 0.988 Sb 0.012 Te–13%GeTe–Nano approaches -280 μV K -1 at 673 K with a low κ lat of 0.56 W m -1 K -1 at 573 K. Consequently, a peak ZT value of 1.38 is achieved at 623 K. Furthermore, a high average ZT avg value of ≈1.04 is obtained in the temperature range from 300 to 773 K for n-type Pb 0.988 Sb 0.012 Te–13%GeTe–Nano.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Atomic Insight into Thermolysis-Driven Growth of 2D MoS 2

Understanding and controlling the transformations of transition metal dichalcogenides (TMDs) from amorphous precursors into two-dimensional (2D) materials is important for guiding synthesis, directing fabrication, and tailoring functional properties. Here, the combined effects of thermal energy and electron beam irradiation are explored on the structural evolution of 2D MoS 2 flakes through the thermal decomposition of a (NH 4 ) 2 MoS 4 precursor inside an ultrahigh vacuum (10 -9 Torr) scanning transmission electron microscope (STEM). The influence of reaction temperature, growth substrate, and the initial precursor morphology on the resulting 2D MoS 2 flake morphology, edge structures, and point defects are explored. Although thermal decomposition occurs extremely fast at elevated temperatures and is difficult to capture using current STEM techniques, electron beam irradiation can induce local transformations at lower temperatures, enabling direct observation and interpretation of critical growth steps including oriented attachment and transition from single- to multilayer structures at atomic resolution. An increase in the number of layers of the MoS 2 flakes from island growth is investigated using electron beam irradiation. These findings provide insight into the growth mechanisms and factors that control the synthesis of few-layer MoS 2 flakes through thermolysis and toward the prospect of atomically precise control and growth of 2D TMDs.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Extrinsic Green Photoluminescence from the Edges of 2D Cesium Lead Halides

Abstract Since the first report of the green emission of 2D all‐inorganic CsPb 2 Br 5 , its bandgap and photoluminescence (PL) origin have generated intense debate and remained controversial. After the discovery that PL centers occupy only specific morphological structures in CsPb 2 Br 5 , a two‐step highly sensitive and noninvasive optical technique is employed to resolve the controversy. Same‐spot Raman‐PL as a static property–structure probe reveals that CsPbBr 3 nanocrystals are contributing to the green emission of CsPb 2 Br 5 ; pressure‐dependent Raman‐PL with a diamond anvil cell as a dynamic probe further rules out point defects such as Br vacancies as an alternative mechanism. Optical absorption under hydrostatic pressure shows that the bandgap of CsPb 2 Br 5 is 0.3–0.4 eV higher than previously reported values and remains nearly constant with pressure up to 2 GPa in good agreement with full‐fledged density functional theory (DFT) calculations. Using ion exchange of Br with Cl and I, it is further proved that CsPbBr 3− x X x (X = Cl or I) is responsible for the strong visible PL in CsPb 2 Br 5− x X x . This experimental approach is applicable to all PL‐active materials to distinguish intrinsic defects from extrinsic nanocrystals, and the findings pave the way for new design and development of highly efficient optoelectronic devices based on all‐inorganic lead halides.

Wang, Chong↗
DOE OSTI2024

Imaging the Breakdown and Restoration of Topological Protection in Magnetic Topological Insulator MnBi 2 Te 4

Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral 1D edge states. Yet, in magnetic topological insulators to date, topological protection is far from robust, with zero-magnetic field QAH effect only realized at temperatures an order of magnitude below the Néel temperature T N , though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realizing QAH effect at higher temperatures. Here a scanning tunneling microscope is used to directly map the size of exchange gap (E g,ex ) and its spatial fluctuation in the QAH insulator 5-layer MnBi 2 Te 4 . Long-range fluctuations of E g,ex are observed, with values ranging between 0 (gapless) and 70 meV, appearing to be uncorrelated to individual surface point defects. The breakdown of topological protection is directly imaged, showing that the gapless edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless regions in the bulk. Finally, it is unambiguously demonstrated that the gapless regions originate from magnetic disorder, by demonstrating that a small magnetic field restores E g,ex in these regions, explaining the recovery of topological protection in magnetic fields. The results indicate that overcoming magnetic disorder is the key to exploiting the unique properties of QAH insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nanometer Resolution Structure‐Emission Correlation of Individual Quantum Emitters via Enhanced Cathodoluminescence in Twisted Hexagonal Boron Nitride

Understanding the atomic structure of quantum emitters, often originating from point defects or impuritie, is essential for designing and optimizing materials for quantum technologies such as quantum computing, communication, and sensing. Despite the availability of atomic-resolution scanning transmission electron microscopy and nanoscale cathodoluminescence microscopy, experimentally determining the atomic structure of individual emitters is challenging due to the conflicting needs for thick samples to generate strong cathodoluminescence signals and thin samples for structural analysis. To overcome this challenge, significantly enhanced cathodoluminescence at twisted interfaces is leveraged to achieve sub-nanometer localization precision for the first time in mapping individual quantum emitters in carbon-implanted hexagonal boron nitride. This unprecedent spatial sensitivity, together with correlative electron energy loss spectroscopy quantitative scanning transmission electron microscopy imaging, and first principles density functional theory calculations, enables the identification of the atomic structure of the 440 nm blue emitter in hexagonal boron nitride as a substituted vertical carbon dimer. Building on the atomic structure insights, nanoscale spatially precise creation of blue emitters is demonstrated by electron beam irradiation of carbon-coated hexagonal boron nitride. This advancement in correlating atomic structures with optical properties lays the foundation for a deeper understanding and precise engineering of quantum emitters, significantly advancing the development of cutting-edge quantum information technologies.

2D material↗
DOE OSTI2016

High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This paper reports memristive switching in La 0.7 Ca 0.3 MnO 3 /PrBa 2 Cu 3 O 7 bilayers with an on/off ratio greater than 103 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. To conclude, the results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces

To understand how variations in interface properties such as misfit-dislocation density and local chemistry affect radiation-induced defect absorption and recombination, we have explored a model system of CrxV1-x alloy epitaxial films deposited on MgO single crystals. By controlling film composition, the lattice mismatch with MgO was adjusted so that the misfit-dislocation density varies at the interface. These interfaces were exposed to irradiation and in situ results show that the film with a semi-coherent interface (Cr) withstands irradiation while V film, which has similar semi-coherent interface like Cr, showed the largest damage. Theoretical calculations indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry, and the precise location of the misfit-dislocation density relative to the interface, drives defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation-tolerant nanomaterials.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2017

Heterogeneous Two-Phase Pillars in Epitaxial NiFe 2 O 4 -LaFeO 3 Nanocomposites

Self-assembled epitaxial oxide nanocomposites have been explored for a wide range of applications, including multiferroic and magnetoelectric properties, plasmonics, and catalysis. These so-called “vertically aligned nanocomposites” form spontaneously during the deposition process when segregation into two phases is energetically favorable as compared to a solid solution. However, there has been surprisingly little work understanding the driving forces that govern the synthesis of these materials, which can include point defect energetics, surface diffusion, and interfacial energies. To explore these factors, La-Ni-Fe-O films have been synthesized by molecular beam epitaxy and it is shown that these phase segregate into spinel-perovskite nanocomposites. Using complementary scanning transmission electron microscopy and atom-probe tomography, the elemental composition of each phase is examined and found that Ni ions are exclusively found in the spinel phase. From correlative analysis, a model for the relative favorability of the Ni2+ and Ni3+ valences under the growth conditions is developed. It is shown that multidimensional characterization techniques provide previously unobserved insight into the growth process and complex driving forces for phase segregation.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Spatially Distributed Ramp Reversal Memory in VO 2

Ramp‐reversal memory has recently been discovered in several insulator‐to‐metal transition materials where a non‐volatile resistance change can be set by repeatedly driving the material partway through the transition. This study uses optical microscopy to track the location and internal structure of accumulated memory as a thin film of VO 2 is temperature cycled through multiple training subloops. These measurements reveal that the gain of insulator phase fraction between consecutive subloops occurs primarily through front propagation at the insulator‐metal boundaries. By analyzing transition temperature maps, it is found, surprisingly, that the memory is also stored deep inside both insulating and metallic clusters throughout the entire sample, making the metal‐insulator coexistence landscape more rugged. This non‐volatile memory is reset after heating the sample to higher temperatures, as expected. Diffusion of point defects is proposed to account for the observed memory writing and subsequent erasing over the entire sample surface. By spatially mapping the location and character of non‐volatile memory encoding in VO 2 , this study results enable the targeting of specific local regions in the film where the full insulator‐to‐metal resistivity change can be harnessed in order to maximize the working range of memory elements for conventional and neuromorphic computing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N-Type PbTe to High Performance

A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n-type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb-doped PbTe exhibits much higher carrier mobility than similar Bi-doped materials, and accordingly, delivers higher power factors and superior ZT. The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n-type charge carriers. Building on this result, the ZT of Pb 0.9875 Sb 0.0125 Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m -1 K -1 at 900 K, making this material a robust candidate for high-temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2017

n-Type SnSe 2 Oriented-Nanoplate-Based Pellets for High Thermoelectric Performance

It is reported that electron doped n-type SnSe 2 nanoplates show promising thermoelectric performance at medium temperatures. After simultaneous introduction of Se deficiency and Cl doping, the Fermi level of SnSe 2 shifts toward the conduction band, resulting in two orders of magnitude increase in carrier concentration and a transition to degenerate transport behavior. In addition, all-scale hierarchical phonon scattering centers, such as point defects, nanograin boundaries, stacking faults, and the layered nostructures, cooperate to produce very low lattice thermal conductivity. Lastly, an enhanced in-plane thermoelectric figure of merit ZT max of 0.63 is achieved for a 1.5 at% Cl doped SnSe 1.95 pellet at 673 K, which is much higher than the corresponding in-plane ZT of pure SnSe 2 (0.08).

36 MATERIALS SCIENCE↗
DOE OSTI2018

Weak Electron Phonon Coupling and Deep Level Impurity for High Thermoelectric Performance Pb 1–x Ga x Te

High ZT of 1.34 at 766 K and a record high average ZT above 1 in the temperature range of 300-864 K are attained in n-type PbTe by engineering the temperature-dependent carrier concentration and weakening electron–phonon coupling upon Ga doping. The experimental studies and first principles band structure calculations show that doping with Ga introduces a shallow level impurity contributing extrinsic carriers and imparts a deeper impurity level that ionizes at higher temperatures. This adjusts the carrier concentration closer to the temperature-dependent optimum and thus maximizes the power factor in a wide temperature range. The maximum power factor of 35 μW cm -1 K -2 is achieved for the Pb 0.98 Ga 0.02 Te compound, and is maintained over 20 μWcm-1 K-2 from 300 to 767 K. Band structure calculations and X-ray photoelectron spectroscopy corroborate the amphoteric role of Ga in PbTe as the origin of shallow and deep levels. Additionally, Ga doping weakens the electron–phonon coupling, leading to high carrier mobilities in excess of 1200 cm 2 V -1 s -1 . Enhanced point defect phonon scattering yields a reduced lattice thermal conductivity. Here, we provide a new avenue, beyond the conventional shallow level doping, for further improving the average ZT in thermoelectric materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

High Thermoelectric Performance in PbSe–NaSbSe 2 Alloys from Valence Band Convergence and Low Thermal Conductivity

PbSe is an attractive thermoelectric material due to its favorable electronic structure, high melting point, and lower cost compared to PbTe. Herein, the hitherto unexplored alloys of PbSe with NaSbSe 2 (NaPb m SbSe m+2 ) are described and the most promising p-type PbSe-based thermoelectrics are found among them. Surprisingly, it is observed that below 500 K, NaPb m SbSe m+2 exhibits unorthodox semiconducting-like electrical conductivity, despite possessing degenerate carrier densities of ≈10 20 cm -3 . Here, it is shown that the peculiar behavior derives from carrier scattering by the grain boundaries. It is further demonstrated that the high solubility of NaSbSe 2 in PbSe augments both the thermoelectric properties while maintaining a rock salt structure. Namely, density functional theory calculations and photoemission spectroscopy demonstrate that introduction of NaSbSe 2 lowers the energy separation between the L- and Σ-valence bands and enhances the power factors under 700 K. The crystallographic disorder of Na + , Pb 2+ , and Sb 3+ moreover provides exceptionally strong point defect phonon scattering yielding low lattice thermal conductivities of 1–0.55 W m -1 K -1 between 400 and 873 K without nanostructures. As a consequence, NaPb 10 SbSe 12 achieves maximum ZT ≈1.4 near 900 K when optimally doped. More importantly, NaPb 10 SbSe 12 maintains high ZT across a broad temperature range, giving an estimated record ZT avg of ≈0.64 between 400 and 873 K, a significant improvement over existing p-type PbSe thermoelectrics.

36 MATERIALS SCIENCE↗