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At least 991 records · Page 55

Stability, electronic quantum states, and magnetic interactions of Er 3+ ions in Ga 2 ⁢O 3

Here, we report an ab initio study of phase stability, defect formation, electronic structure, and multiple magnetic, Dzyaloshinskii-Moriya, optical, hyperfine, and crystal field interactions in erbium (Er)-doped wide band gap 𝛼- and 𝛽-gallium oxides (Ga 2 ⁢O 3 ), critically important to make a foundation for both optoelectronic and quantum information applications. The chemical, structural, mechanical, and dynamical stabilities of the pristine phases are confirmed from respective negative formation energies, negative cohesive energies, favorable elastic constants, and positive phonon frequencies. The phonon dispersions indicate that the Ga-O bonds are uniform in the 𝛼-phase, while they vary in the 𝛽-phase due to the anisotropic polyhedral movement. The defect formation energy analysis confirms that both Er-doped 𝛼- and 𝛽−Ga 2 ⁢O 3 prefer Er 3+ (neutral) state. The underestimated band gaps of the pristine phases from standard density functional theory (DFT) calculations as compared to experimental values are corrected by employing the hybrid functional calculations, resulting in the indirect band gaps of 5.21 eV in 𝛼−Ga 2 ⁢O 3 and 4.94 eV in 𝛽−Ga 2 ⁢O 3 . The site preference energy analysis indicates partial occupation of Er in the octahedral site of Ga. The anisotropic nature of hyperfine tensor coefficients of Er is similar in both phases, which may be due to the occupation of Er in the same octahedral Ga site. On the other hand, the calculated magnetic exchange interaction between two Er dopants is negative for 𝛼 and positive for 𝛽, indicating an antiferromagnetic (AFM) ground state in the former and a ferromagnetic (FM) ground state in the latter. Large values of Dzyaloshinskii-Moriya interactions (DMIs) are obtained along the 𝑥 direction in the 𝛼 and along the 𝑦 direction in the 𝛽. The large DMI may support exotic magnetic textures, a promising direction for spintronic applications. The analysis of dielectric constants and refractive indices of both pristine and Er-doped phases shows a good agreement with available experimental values. The calculated optical anisotropy is slightly higher in 𝛽 than those in 𝛼, which is due to the involvement of lower symmetry in 𝛽. The crystal field coefficients (CFCs) calculated from DFT are used to analyze 4⁢𝑓 multiplets and 4⁢𝑓 −4⁢𝑓 transitions. Thus calculated lowest energy level of the first excited state to the lowest energy level of the ground state is about 1.53 µ⁢m, which is in a good agreement with available experiments, and it falls within the quantum telecommunication wavelength range.

3-dimensional systems↗

Pressure-temperature equation of state of Al 2 ⁢O 3 up to 14 Mbar and 40 kK

Sapphire (Al 2 ⁢O 3 ), known for its remarkable incompressibility at ambient conditions, plays a pivotal role in both static and dynamic compression research. Accurately characterizing its equation of state (EoS) is essential for these applications. Here, we present a complete Hugoniot of Al 2 ⁢ O 3 as locus of experimentally assessed, high-precision, pressure, density and temperature states up to 14 Mbar and 43 kK. The Hugoniot is established with single shock experiments using magnetically launched hyper velocity flyers on the Z Accelerator at Sandia National Laboratories. We explore principal Hugoniot states at very high shock 𝑇 and 𝑝 in the solid phase, tracking the solid-liquid boundary and culminating at 2.4-fold compression, where data provides a direct constraint on the liquid phase. Corresponding shock release data probe thermodynamic states complementary to the Hugoniot and place additional constraints on tabular EoS models. Our findings indicate a significant deviation from existing tabular EoS models for Al 2 ⁢ O 3 dictating a comprehensive overhaul. We develop two advanced EoSs for Al 2 ⁢ O 3 the SESAME 97412 model, featuring an extensive phase diagram that includes three solid phases and the liquid phase, and the updated LEOS 2200m2 model. EoS development is assisted with Quantum Molecular Dynamics simulations. Our experimental data allows for stringent testing of our EoSs. Both models accurately capture the Hugoniot of Al 2 ⁢O 3 up to the highest pressures and temperatures. Rigorous experimental determination of extreme pressures and temperatures, paired with sophisticated models, advances the frontier of EoS development beyond 1 terapascal.

Kalita, Patricia [Sandia National Laboratories (SN↗

Li 4 Ru 2 OCl 10 ·10H 2 O: crystal structure, magnetic properties and bonding interactions in ruthenium-oxo complexes

The results of the structural determination, magnetic characterization, and theoretical calculations of a new ruthenium-oxo complex, Li 4 [Ru 2 OCl 10 ]·10H 2 O, are presented. Single crystals were grown using solvent methods and the crystal structure was characterized by single crystal X-ray diffraction. Li 4 [Ru 2 OCl 10 ]·10H 2 O crystallizes into a low-symmetry triclinic structure ($P\bar1$) due to the much smaller Li + cation compared to K + cation in the tetragonal complex K 4 [Ru 2 OCl 10 ]·H 2 O. The X-ray photoelectron spectra confirm only the single valent Ru 4+ in Li 4 [Ru 2 OCl 10 ]·10H 2 O even though two distinct Ru sites exist in the crystal structure. Magnetic measurements reveal the diamagnetic property of Li 4 [Ru 2 OCl 10 ]·10H 2 O with unpaired electrons existing on Ru 4+ . Furthermore, the molecular orbital analysis matches well with the observed UV and magnetic measurements.

36 MATERIALS SCIENCE↗

A Comparison of CdS and Zn(O,S) Buffer Layers in (Ag,Cu)(In,Ga)Se2 Solar Cells

Cu(In,Ga)Se 2 -based solar cells typically use a C dS buffer layer, even though its relatively low bandgap causes parasitic absorption. While alternatives to CdS have been explored in other studies, limited results have been shown for Ag-alloyed CIGS (ACIGS). In this study, ACIGS solar cells with both CdS and Zn(O,S) buffer layers were fabricated and compared for solar cell performance. The Zn(O,S) buffer slightly improved J sc through reduced absorption, although surface optimization is necessary. The Zn(O,S) ACIGS also had improved FF through reduced series resistance and ideality factor, which could be improved further through optimization. However, the Voc in the Zn(O,S) samples was reduced, likely due to increased bulk and front interface recombination. This study shows the promise of Zn(O,S) as a buffer layer in ACIGS solar cells and suggests pathways for further improvement.

absorption↗

Enhanced Surface Passivation by Atomic Layer Deposited Al 2 O 3 for Ultraviolet Sensitive Silicon Photomultipliers

Here, we describe a superior passivation of p-type (p + ) Si surface by Al 2 O 3 thin film that is synthesized by plasma-assisted atomic layer deposition for ultraviolet sensitive silicon photomultipliers (SiPM), compared to conventional SiO 2 and SiN x passivation schemes. The superiority of Al 2 O 3 passivation is due to not only a sufficiently low interface defect density but also a high density of built-in negative charges. A 7 nm thin Al 2 O 3 film can yield an emitter saturation current density of ~8 fA/cm 2 on high sheet resistance p + layer, compared to ~60 and ~1480 fA/cm 2 for thermal SiO 2 and SiN x passivation. This superior surface passivation allows the photon-generated carriers to have higher probabilities to reach the high-field region to trigger an avalanche event. In addition, Al 2 O 3 thin film provides very low values of effective surface recombination velocity on low resistivity n-type and p-type Si surfaces, which can lead to well-passivated surface features on guard ring and trench isolation regions of SiPM. These demonstrate the potential of Al 2 O 3 thin film passivation to improve quantum efficiency and thus photo-detection efficiency of ultraviolet sensitive SiPM with p + /n - /n/n + structure.

36 MATERIALS SCIENCE↗

Plasma enhanced atomic layer deposition of thin film Li 1+x Mn 2-x O 4 for realization of all solid-state 3D lithium-ion microbatteries

Here, the plasma enhanced atomic layer deposition (PEALD) process for MnO 2 was demonstrated, exhibiting self-limiting growth as well as stable composition and stable growth rate over a temperature window of 205–265 °C. The PEALD process for MnO 2 was combined with the thermal ALD process for LiOH to synthesize Li 1+x Mn 2-x O 4 thin film cathodes, where the stoichiometry was effectively controlled to allow for crystallization in the electrochemically active spinel phase. A 3D nanostructure consisting of an Li 1+x Mn 2-x O 4 cathode layer, ALD Li x Al y Si z O solid electrolyte, and SiGe nanowire anode was fabricated and characterized via TEM. The Li 1+x Mn 2-x O 4 thin films maintained 66% of the areal capacity upon a 100× increase in the rate (4–360 μ A cm -2 ) as well as 97% capacity retention over 100 cycles at ~5C. The ALD Li 1+x Mn 2-x O 4 thin films exhibited a volumetric capacity of 52 μ Ah cm -2 μ m -1 at a C-rate of ~0.5C and, coupled with the high operating voltage (4.0 V), offer some of best areal energy densities for ALD thin film cathodes, making it a viable material for integration with 3D lithium-ion microbatteries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Performance and reliability of β-Ga 2 O 3 Schottky barrier diodes at high temperature

Beta-gallium oxide (ß-Ga 2 O 3 ) is an ultrawide bandgap semiconductor that has potential for power electronic applications and devices operating at high temperatures. Particularly important for these applications are its 4.9 eV bandgap, facile electron doping, and the ability to grow ß-Ga 2 O 3 crystals from the melt. In this work, vertical ß-Ga 2 O 3 Schottky barrier diodes were fabricated using Pt Schottky and Ti-based Ohmic contacts and Au contact pads on unintentionally doped n-type, (2¯01)-oriented single crystal substrates. The diode’s temperature-dependent electrical properties up to 400°C were investigated, and the Pt/Ga 2 O 3 Schottky barrier height was determined to be close to 1.2 eV. The degradation of the contacts over multiple cycles up to 400°C was observed, resulting in a significant increase in series resistance of the diodes by 1000× at ambient temperature after they were cycled. According to electron microscopy measurements, this degradation is likely due in part to the migration and oxidation of Ti at the top surface of the Au contact pads. This degradation highlights the need for further research and development to ensure stable Ohmic and Schottky contacts to Ga 2 O 3 at temperatures above 400°C.

36 MATERIALS SCIENCE↗

Redundancy in Aromatic O -Demethylation and Ring-Opening Reactions in Novosphingobium aromaticivorans and Their Impact in the Metabolism of Plant-Derived Phenolics

ABSTRACT Lignin is a plant heteropolymer composed of phenolic subunits. Because of its heterogeneity and recalcitrance, the development of efficient methods for its valorization still remains an open challenge. One approach to utilize lignin is its chemical deconstruction into mixtures of monomeric phenolic compounds, followed by biological funneling into a single product. Novosphingobium aromaticivorans DSM 12444 has been previously engineered to produce 2-pyrone-4,6-dicarboxylic acid (PDC) from depolymerized lignin by simultaneously metabolizing multiple aromatics through convergent routes involving the intermediates 3-methoxygallic acid (3-MGA) and protocatechuic acid (PCA). We investigated enzymes predicted to be responsible for O -demethylation and oxidative aromatic ring opening, two critical reactions involved in the metabolism of phenolic compounds by N. aromaticivorans . The results showed the involvement of DesA in O -demethylation of syringic and vanillic acids, LigM in O- demethylation of vanillic acid and 3-MGA, and a new O- demethylase, DmtS, in the conversion of 3-MGA into gallic acid (GA). In addition, we found that LigAB was the main aromatic ring-opening dioxygenase involved in 3-MGA, PCA, and GA metabolism and that a previously uncharacterized dioxygenase, LigAB2, had high activity with GA. Our results indicate a metabolic route not previously identified in N. aromaticivorans that involves O -demethylation of 3-MGA to GA. We predict that this pathway channels ∼15% of the carbon flow from syringic acid, with the rest following ring opening of 3-MGA. The new knowledge obtained in this study allowed for the creation of an improved engineered strain for the funneling of aromatic compounds that exhibits stoichiometric conversion of syringic acid into PDC. IMPORTANCE For lignocellulosic biorefineries to effectively contribute to reduction of fossil fuel use, they need to become efficient at producing chemicals from all major components of plant biomass. Making products from lignin will require engineering microorganisms to funnel multiple phenolic compounds to the chemicals of interest, and N. aromaticivorans is a promising chassis for this technology. The ability of N. aromaticivorans to efficiently and simultaneously degrade many phenolic compounds may be linked to having functionally redundant aromatic degradation pathways and enzymes with broad substrate specificity. A detailed knowledge of aromatic degradation pathways is thus essential to identify genetic engineering targets to maximize product yields. Furthermore, knowledge of enzyme substrate specificity is critical to redirect flow of carbon to desired pathways. This study described an uncharacterized pathway in N. aromaticivorans and the enzymes that participate in this pathway, allowing the engineering of an improved strain for production of PDC from lignin.

Biotechnology & Applied Microbiology↗

FY2023 Status Report: Model 9975 O-Ring Fixture Long-Term Leak Performance

Leak testing experiments to monitor the aging performance of Viton ® GLT and GLT-S O-rings used in the model 9975 shipping package has been ongoing since 2004 at Savannah River National Laboratory. Seventy tests using mock-up 9975 primary containment vessels (PCVs) with GLT O-rings were assembled and heated to temperatures ranging from 200 to 450 °F. Due to material substitution, fourteen tests with GLT-S O-rings were initiated in 2008 and heated to temperatures ranging from 200 to 400 °F. The conditioning temperatures are elevated compared to the calculated maximum O-ring temperature in a 9975 package in storage, 158 °F, to accelerate aging and enable observations of O-ring failures in a reasonable time frame.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Hall Effect Study of the Metamagnetic Transition in the Sr 4 (Ru 0.99 Fe 0.01 ) 3 O 10 Nanosheet

Sr 4 (Ru 0.99 Fe 0.01 ) 3 O 10 shows a ferromagnetic (FM) transition at T C ~ 105 K with the magnetic easy axis in the ab plane, followed by a metamagnetic transition (MMT) at low temperatures when the magnetic field H is applied along the c axis, which is in sharp contrast to that of the pure Sr 4 Ru 3 O 10 , where the easy axis is along the c axis and the MMT is in the ab plane. Here, we studied the MMT in the Sr 4 (Ru 0.99 Fe 0.01 ) 3 O 10 nanosheet by the Hall effect. It was found that the ordinary Hall coefficient of Sr 4 (Ru 0.99 Fe 0.01 ) 3 O 10 is almost the same as that of the pure Sr 4 Ru 3 O 10 , while a sudden increase in the Hall resistance R xy is observed below ~50 K, above which the R xy presents the conventional anomalous Hall effect up to T C . Analysis of the results indicates that the MMT has no direct correlation to the electronic structure but closely relates to the magnetic moment locking, where the magnetic-field-induced breakdown of the locked moments is responsible for the MMT.

36 MATERIALS SCIENCE↗

Structure and Anharmonicity of α- and β -Sb 2 O 3 at Low Temperature

Antimony oxides are important materials for catalysis and flame-retardant applications. The two most common phases, α-Sb 2 O 3 (senarmontite) and β-Sb 2 O 3 (valentinite), have been studied extensively. Specific focus has been placed recently on their lattice dynamics properties and how they relate to the α-β phase transformation and their potential anharmonicity. However, there has not been any direct investigation of anharmonicity in these systems, and a surprising lack of low-temperature structural information has prevented further study. Here, we report the powder neutron diffraction data of both phases of Sb 2 O 3 , as well as structural information. α-Sb 2 O 3 behaved as expected, but β-Sb 2 O 3 revealed a small region of zero thermal expansion along the c axis. Additionally, while the β phase matched well with reported atomic displacement parameters, the α phase displayed a marked deviation. This data will enable further investigations into these systems.

36 MATERIALS SCIENCE↗

Inductively Coupled Nonthermal Plasma Synthesis of Size-Controlled γ-Al 2 O 3 Nanocrystals

Gamma alumina (γ-Al 2 O 3 ) is widely used as a catalyst and catalytic support due to its high specific surface area and porosity. However, synthesis of γ-Al 2 O 3 nanocrystals is often a complicated process requiring high temperatures or additional post-synthetic steps. Here, we report a single-step synthesis of size-controlled and monodisperse, facetted γ-Al 2 O 3 nanocrystals in an inductively coupled nonthermal plasma reactor using trimethylaluminum and oxygen as precursors. Under optimized conditions, we observed phase-pure, cuboctahedral γ-Al 2 O 3 nanocrystals with defined surface facets. Nuclear magnetic resonance studies revealed that nanocrystal surfaces are populated with AlO 6 , AlO 5 and AlO 4 units with clusters of hydroxyl groups. Nanocrystal size tuning was achieved by varying the total reactor pressure yielding particles as small as 3.5 nm, below the predicted thermodynamic stability limit for γ-Al 2 O 3 .

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Bandgap Engineering of Ga 2 O 3 by MOCVD Through Alloying with Indium

Ga 2 O 3 and In 2 O 3 are vital semiconductors with current and future electronic device applications. Here, we study the alloying of In 2 O 3 and Ga 2 O 3 (IGO) and the associated changes in structure, morphology, band gap, and electrical transport properties. Undoped films of IGO were deposited on sapphire substrates with varying indium (In) percentage from zero to 100% by metal-organic chemical vapor deposition (MOCVD). Some films were annealed in H 2 to induce electrical conductivity. The measurements showed the optical band gap decreased by adding In; this was confirmed by density functional (DFT) calculations, which revealed that the nature of the valence band maximum and conduction band minimum strongly relate to the chemistry and that the band gap drops by adding In. The as-grown films were highly resistive except for pure In 2 O 3 , which possesses p-type conductivity, likely arising from In vacancy-related acceptor states. N-type conductivity was induced in all films after H-anneal. DFT calculations revealed that the presence of In decreases the electron effective mass, which is consistent with the electrical transport measurements that showed higher electron mobility for higher In percentage. The work revealed the successful band gap engineering of IGO and the modification of its band structure while maintaining high-quality films by MOCVD.

36 MATERIALS SCIENCE↗

Presupernova O–C Shell Mergers Could Produce More 44 Ti than the Explosion

The formation of 44 Ti in massive stars is thought to occur during explosive nucleosynthesis; however, recent studies have shown it can be produced during O–C shell mergers prior to core collapse. We investigate how mixing according to 3D macrophysics derived from hydrodynamic simulations impacts presupernova O–C shell merger nucleosynthesis and if it can dominate explosive supernova production of 44 Ti and other radioactive isotopes. We compare a range of observations and models of explosive 44 Ti yields to preexplosive multizone mixing–burning nucleosynthesis simulations of an O–C shell merger in a 15 M ⊙ Z = 0.02 stellar model with mixing conditions corresponding to different 3D hydrodynamic mixing scenarios. Radioactive species produced in the O shell have a multidex spread in preexplosive yield predictions across different 3D mixing scenarios of 1.54 and 2.14 dex on average, depending on mass cut. 44 Ti has the largest spread of 4.78 and 4.81 dex depending on mass cut. Further, we show that the preexplosive production of 44 Ti can be larger than the explosive production of models and can match observations. Our results also show that 3D mixing physics enhances 44 Ti in 1D models without modifying 56 Ni yields. We conclude that quantitative predictions of 44 Ti and other radioactive species more broadly require an understanding of the 3D hydrodynamic mixing conditions present during the O–C shell merger.

Issa, Joshua [University of Victoria, BC (Canada);↗

Dependence of Narrow-line Region Sizes on [O III ] Luminosity in Low-redshift Active Galactic Nuclei with Double-peaked Broad Balmer Emission Lines

In this paper, simple but interesting results are reported on the upper limits of narrow-line region (NLR) sizes of a small sample of 38 low-redshift (z < 0.1) active galactic nuclei (AGN) with double-peaked broad emission lines (double-peaked BLAGN), in order to check whether the NLR sizes in type-1 AGN (broad line) and type-2 AGN (narrow line) obey a similar empirical dependence on [O III ] luminosity. In order to correct the inclination effects on projected NLR sizes of type-1 AGN, the accretion disk origin is commonly applied to describe the double-peaked broad Hα line, leading to the determined inclination angles of central disk-like broad-line regions of 38 double-peaked BLAGN. Then, considering the fixed Sloan Digital Sky Survey (SDSS) fiber radius, the upper limits of the NLR sizes of the 38 double-peaked BLAGN can be estimated. Meanwhile, a strong linear correlation between continuum luminosity and [O III ] luminosity is applied to confirm that the [O III ] emissions of the 38 double-peaked BLAGN are totally covered in the SDSS fibers. Considering the reddening-corrected measured [O III ] luminosity, the upper limits of the NLR sizes of the 38 double-peaked BLAGN are within a 99.9999% confidence interval of the expected results from the empirical relation between NLR size and [O III ] luminosity in type-2 AGN. In the current understanding, there are no challenges to the unified model of AGN through the space properties of NLRs.

79 ASTRONOMY AND ASTROPHYSICS↗

Data from: Coupled machine learning-ecosystem ensemble models substantially improve predictions of nitrous oxide (N 2 O) fluxes from US croplands

Nitrous oxide (N₂O) is a potent and persistent greenhouse gas, with rising atmospheric concentrations driven in part by inefficient use of synthetic nitrogen (N) fertilizers in agriculture. Predicting soil N₂O emissions is challenging due to high spatial and temporal variability arising from complex soil biogeochemical processes. Process-based ecosystem models and standalone machine learning (ML) approaches without extensive site-specific calibration often miss high emission episodes. Here, we show how an Ensemble Modeling System (EMS) based on outputs from an ensemble of ecosystem models coupled to an ensemble of ML models can improve predictions and understanding of N2O fluxes from US cropland. Trained and validated on approximately 12,000 N2O chamber measurements at 17 U.S. Midwest sites (six crops, 35 management practices), the EMS accurately predicted daily fluxes of N2O at both training (R² = 0.84, RMSE = 16.4 g N ha⁻¹ d⁻¹) and held-out testing sites (R² = 0.84, RMSE = 6.2 g N ha⁻¹ d⁻¹). Analyses identified six dominant N₂O drivers: soil organic carbon (SOC), NH₄⁺, NO₃⁻, water-filled pore space (WFPS), soil temperature, and biomass production. Wet, warm soils produced large N₂O peaks only with sufficient SOC and mineral N; in low-SOC soils, fluxes remained low. Incorporating these drivers into process-based models might significantly improve their predictive capacity. The EMS demonstrates a strong potential to predict N₂O fluxes at unseen sites, enabling more reliable regional inventories, improved gap-filling where measurements are sparse, and enhanced understanding of mechanisms to advance targeted mitigation strategies in food, feed, and bioenergy crops.

agricultural sciences↗

Detection of O-17 in IRC+10216

Lines of the fundamental vibration-rotation band of C-12 O-17 have been observed near 4.7 micron in IRC+10216. Lines of C-12 O-18 were not detected, indicating a lower limit of 5 for the abundance ratio O-17/O-18. A lower limit of 200 and a probable value of 400 is obtained for the ratio O-16/O-17. The presence of C-12 O-17 is also indicated in alpha Her and alpha Sco.

Rank, D. M.↗

The ionization of cloud and intercloud hydrogen by O and B stars

The ionization and acceleration of neutral clouds in the neighborhood of a single O star located in a low-density intercloud medium (ICM) are analyzed. It is shown that due to ionized cloud debris, the rms electron density may increase to 1 per cu cm in the lifetime of the star. It is suggested that an O star which moves away from its primordial nebula at a velocity of 10 to 20 km/s may continuously surround itself with ionized cloud debris and may never extensively ionize a low-density ICM. The lifetime of a remote cloud exposed to relatively uniform Lyman continuum radiation is derived and evaluated as a function of position in the Galaxy. It is found that extensive O-star ionization of a low-density ICM cannot be maintained for more than a few million years if the cloud debris is not cleared away by, for example, supernovae. Various ICM models are examined in which B stars and possibly nuclei of planetary nebulae play a major role in the ionization of interstellar hydrogen. It is shown that such stars may ionize a larger volume of the Galaxy than O stars, even though the volume emissivity of their Lyman continuum radiation is only 5% to 15% of that of O stars.

Elmergreen, B. G.↗