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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Two-dimensional simulation research of secondary electron emission avalanche discharge on vacuum insulator surface

Based on the secondary electron emission avalanche (SEEA) model, the SEEA discharge on the vacuum insulator surface is simulated by using a 2D PIC-MCC code developed by ourselves. The evolutions of the number of discharge electrons, insulator surface charge, current, and 2D particle distribution are obtained. The effects of the strength of the applied electric field, secondary electron yield coefficient, rise time of the pulse, length of the insulator on the discharge are investigated. The results show that the number of the SEEA electrons presents a quadratic dependence upon the applied field strength. The SEEA current, which is on the order of Ampere, is directly proportional to the field strength and secondary electron yield coefficient. Finally, the electron-stimulated outgassing is included in the simulation code, and a three-phase discharge curve is presented by the simulation, which agrees with the experimental data.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Preliminary investigation of an improved metal-dielectric cathode for magnetically insulated transmission line oscillator

In order to explore the cathode with good repetition quality for the magnetically insulated transmission line oscillators, an improved metal-dielectric cathode is proposed and investigated experimentally. The cathode is designed to be step-like shape, and thin copper plated boards are periodically and compactly arrayed on the surface of the cathode base, which ensures the uniformity of the electrons emitted from the cusps of the copper plated boards. According to the numerical simulation results, the step-like shape is beneficial to convert the kinetic energy of the magnetic insulating current partially and enhance the beam-wave interaction efficiency. Finally, a preliminary experiment of an L-band magnetically insulated transmission line oscillator (MILO) with the improved metal-dielectric cathode is carried out. A high power microwave (HPM) with an average power of 1.95 GW is generated from the MILO, with an efficiency of 13.5%. Under the same experiment condition, the output power and main frequency with the presented cathode are almost the same to those with the velvet cathode. Apart from that, metal-dielectric cathode has the merits of small outgassing and long lifetime, and all of these make the improved metal-dielectric cathode significantly promising for the MILO repetition operation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Nature of superconductor-insulator transition at LaAlO{sub 3}/SrTiO{sub 3} interface

The two-dimensional electron liquid, at the interface between two band insulators LaAlO{sub 3} and SrTiO{sub 3}, exhibits novel, unconventional superconductivity below 200 mK. One of the remarkable properties of the two-dimensional superconductor is its fantastic tunability by external parameters such as gate-voltage or magnetic field. We study the superconductor to insulator transition induced by gate-voltage by employing a self-consistent, mean-field Bogoliubov-de Gennes treatment based on an effective model. We show that the non-monotonic behaviour of the superconductivity with respect to gate-voltage is intrinsically due to the Rashba spin-orbit coupling. With increasing gate-voltage both the electron concentration and Rashba spin-orbit splitting increases. Elevated electron filling boosts superconductivity whereas enhanced spin-orbit splitting annihilates electron-pairing. The non-monotonicity is a result of this competition. The device application of the superconductor-insulator transition in this interface is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Quantum anomalous Hall effect and a nontrivial spin-texture in ultra-thin films of magnetic topological insulators

We study the evolution of quantum anomalous Hall (QAH) effect for a Z{sub 2} topological insulator (TI) thin films in a proximity induced magnetic phase by a realistic layered k·p model with interlayer coupling. We examine three different magnetic configurations in which ferromagnetic (FM) layer(s) is added either from one side (FM-TI), from both sides (FM-TI-FM), or homogeneously distributed (magnetically doped) in a TI slab. We map out the thickness-dependent topological phase diagram under various experimental conditions. The critical magnetic exchange energy for the emergence of QAH effect in the latter two cases decreases monotonically with increasing number of quintuple layers (QLs), while it becomes surprisingly independent of the film thickness in the former case. The gap size of the emergent QAH insulator depends on the non-magnetic “parent” gap of the TI thin film and is tuned by the FM exchange energy, opening a versatile possibility to achieve room-temperature QAH insulator in various topological nanomaterials. Finally, we find that the emergent spin-texture in the QAH effect is very unconventional, non-“hedgehog” type; and it exhibits a chiral out-of-plane spin-flip texture within the same valence band which is reminiscent of dynamical “skyrmion” pattern, except our results are in the momentum space.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

A metal-insulator-metal electron emitter based on a porous Al{sub 2}O{sub 3} film

A metal-insulator-metal electron emitter containing a sandwiched insulator layer composed of porous aluminum oxide Al{sub 2}O{sub 3} was fabricated. The electron emission characteristics of the electron emitter were investigated under vacuum and xenon. Treatment with H{sub 3}PO{sub 4} and rapid thermal oxidation increased the electric field inside the insulator and improved the quality of porous Al{sub 2}O{sub 3}, resulting in higher efficiency and less fluctuation of electron emission. The maximum current and efficiency of electron emission reached 1.05 mA/cm{sup 2} and 51.2%, respectively, under a pressure of 1.0×10{sup −4} Pa. In addition, electrons were injected into xenon and 147 nm vacuum ultraviolet emission was detected in xenon at a pressure of 5.0 × 10{sup 2 }Pa. This electron emitter has a great potential for use as an ultraviolet radiation source.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds

The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge{sub 2}Sb{sub 2}Te{sub 5} and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Photoconductivity oscillations in surface state of three-dimensional topological insulator subjected to a magnetic field

We describe a theoretical study of the terahertz (THz) radiation field-induced dc transport response of the surface state of a 3D topological insulator that has been subjected to a perpendicular magnetic field. Using the Landau–Floquet state and linear response theory, we obtain the photoconductivity characteristics for various types of polarized THz field. The longitudinal photoconductivity shows a clear oscillatory dependence on ω/ω{sub B}, where ω{sub B}=v{sub F}√(2eB/ℏ). This oscillation occurs because of the oscillatory structure of the Landau density of states and occurs in agreement with the photon-assisted transitions between the different Landau levels. The THz field's polarization has a major influence on the photoconductivity. A linear transverse polarization will lead to the most obvious oscillation, while the circular polarization is next to it, but the longitudinal polarization has no influence. We also discuss the broadening effect on the impurity potential and its influence. The findings with regard to the interactions between topological insulators and THz fields actually open a path toward the development of THz device applications of topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Collapse of the low temperature insulating state in Cr-doped V{sub 2}O{sub 3} thin films

We have grown epitaxial Cr-doped V{sub 2}O{sub 3} thin films with Cr concentrations between 0% and 20% on (0001)-Al{sub 2}O{sub 3} by oxygen-assisted molecular beam epitaxy. For the highly doped samples (>3%), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between 1% and 3%), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below 3% and increases the room temperature resistivity towards the values of Cr-doped V{sub 2}O{sub 3} single crystals. It is well-know that oxygen excess stabilizes a metallic state in V{sub 2}O{sub 3} single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition, leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V{sub 2}O{sub 3} films can be interesting candidates for field effect devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrodynamics and quantum capacity: The case of Bi{sub 2}Se{sub 3} topological insulator

Layered Bi-chalcogenide topological insulators are among the most available energy conversion (thermoelectric) and storage (battery) materials. Motivated by this applied aspect of fundamental importance and the good agreement between theory and key experiments probing spectroscopy and dc transport, we undertake a detailed study of electrodynamic responses of bulk Bi{sub 2}Se{sub 3} topological insulator. In particular, we confirm that the interplay between spin-orbit and electron correlations underpins its bulk metallicity. We show the implications of our proposal for the multi-channel nature of galvanostatic, voltage-capacity profiles intrinsic to Li{sub x}Bi{sub 2}Se{sub 3} battery material. Supported by a microscopic description of quantum capacity, we predict that layered Bi-based topological insulators are promising candidates for future high-voltage solid-state batteries.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Manipulation of the presence of helical surface states of topological insulators using Sb{sub 2}Te{sub 3}-GeTe superlattices

Ab initio calculations have predicted a transition between topological insulators and band insulators in superlattices consisting of Sb{sub 2}Te{sub 3} and GeTe, when the periodicity is varied. We examine the amplitude of the weak antilocalization effect to confirm the transition. In agreement with the predictions, robust surface states are present for (Sb{sub 2}Te{sub 3}){sub 1}(GeTe){sub 2} but absent when the content of the well-known topological insulator Sb{sub 2}Te{sub 3} is increased as (Sb{sub 2}Te{sub 3}){sub 4}(GeTe){sub 2}, manifesting that the electronic coupling in the superlattices affects the emergence of the helical surface states nontrivially.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Local Peltier-effect-induced reversible metal–insulator transition in VO{sub 2} nanowires

We report anomalous resistance leaps and drops in VO{sub 2} nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO{sub 2} nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb{sub 2}O{sub 5}, WO{sub 3}, V{sub 2}O{sub 5}, and MoO{sub 3}. The low electron affinity Al{sub 2}O{sub 3} was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 × 10{sup 13} cm{sup −2}, and a lower sheet resistance, down to 2.6 kΩ/sq, in comparison to the atmosphere-induced values of about 1 × 10{sup 13} cm{sup −2} and 10 kΩ/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Irreversible metal-insulator transition in thin film VO 2 induced by soft X-ray irradiation

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO 2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO 2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation. As a strongly correlated transition metal oxide, VO 2 is an interesting and valuable material both for expanding our understanding of fundamental physics and for potential applications due to its particular metal-insulator transition (MIT). At 340 K, the resistance of bulk VO 2 exhibits a large jump (up to 5 orders of magnitude), accompanied by first order crystal phase transition from a room temperature monoclinic phase to a high temperature tetragonal phase.1,2 The origin of the MIT has been widely discussed since electron–phonon interaction (Peierls type) or electron–electron interaction (Mott–Hubbard type) could play a key role in inducing the occurrence of the MIT.3–7 Furthermore, these characteristics of the VO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2019

Demonstration of distributed capacitance compensation in a metal-insulator-metal infrared rectenna incorporating a traveling-wave diode

We experimentally demonstrate that the transmission line impedance of traveling-wave diodes can circumvent resistance-capacitance time-constant limitations of metal-insulator-metal diodes in rectennas operating at optical frequencies. We fabricated low resistance (380 Ω ) and moderate responsivity (0.46 A/W) metal-insulator-metal traveling-wave diodes. When a rectenna incorporating the traveling-wave diode was illuminated with 10.6 μ m radiation, it produced a peak system responsivity of 130 μ A/W and a detectivity of 1.0 × 10 4 Jones. These results agree with the simulated device performance and exceed the response of an equivalent lumped-element metal-insulator-metal rectenna.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Insulators at fractional fillings in twisted bilayer graphene partially aligned to hexagonal boron nitride

At partial fillings of its flat electronic bands, magic-angle twisted bilayer graphene (MATBG) hosts a rich variety of competing correlated phases that show sample-to-sample variations. Divergent phase diagrams in MATBG are often attributed to the sublattice polarization energy scale, tuned by the degree of alignment of the hexagonal boron nitride (hBN) substrates typically used in van der Waals devices. Unaligned MATBG exhibits unconventional superconductor and correlated insulator phases, while nearly perfectly aligned MATBG/hBN exhibits zero-field Chern insulating phases and lacks superconductivity. Here we use scanning tunneling microscopy and spectroscopy (STM/STS) to observe gapped phases at partial fillings of the flat bands of MATBG in a new intermediate regime of sublattice polarization, observed when MATBG is only partially aligned (θ Gr-hBN ≈ 1.65°) to the underlying hBN substrate. Under this condition, MATBG hosts not only phenomena that naturally interpolate between the two sublattice potential limits, but also unexpected gapped phases absent in either of these limits. At charge neutrality, we observe an insulating phase with a small energy gap (Δ < 5 meV) likely related to weak sublattice symmetry breaking from the hBN substrate. In addition, we observe new gapped phases near fractional fillings ν = ±1/3 and ν = ±1/6, which have not been previously observed in MATBG. Importantly, energy-resolved STS unambiguously identifies these fractional filling states to be of single-particle origin, possibly a result of the super-superlattice formed by two moiré superlattices. Finally, our observations emphasize the power of STS in distinguishing single-particle gapped phases from many-body gapped phases in situations that could be easily confused in electrical transport measurements, and demonstrate the use of substrate engineering for modifying the electronic structure of a moiré flat-band material.

Physics↗
DOE OSTI2020

Spin current generation and detection in uniaxial antiferromagnetic insulators

Spin current represents a flow of spin angular momentum and does not require movement of charges. Magnetic insulators can therefore work as a source as well as a medium of spin currents, which has been established in ferrimagnetic insulators. Here, we report recent progress in the generation and electrical detection of spin currents in uniaxial antiferromagnetic insulators carried by antiferromagnetic magnons, both thermally and resonantly excited, respectively, via the spin Seebeck effect and antiferromagnetic spin pumping by subterahertz microwaves. These findings open up many exciting possibilities of potential antiferromagnetic applications.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗