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NASA NTRS2000

2D Quantum Mechanical Study of Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗

NASA NTRS2001

2D Quantum Transport Modeling in Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗

NASA NTRS1995

A universal steady state I-V relationship for membrane current

A purely electrical mechanism for the gating of membrane ionic channel gives rise to a simple I-V relationship for membrane current. Our approach is based on the known presence of gating charge, which is an established property of the membrane channel gating. The gating charge is systematically treated as a polarization of the channel protein which varies with the external electric field and modifies the effective potential through which the ions migrate in the channel. Two polarization effects have been considered: 1) the up or down shift of the whole potential function, and 2) the change in the effective electric field inside the channel which is due to familiar effect of the effective reduction of the electric field inside a dielectric body because of the presence of surface charges on its surface. Both effects are linear in the channel polarization. The ionic current is described by a steady state solution of the Nernst-Planck equation with the potential directly controlled by the gating charge system. The solution describes reasonably well the steady state and peak-current I-V relationships for different channels, and when applied adiabatically, explains the time lag between the gating charge current and the rise of the ionic current. The approach developed can be useful as an effective way to model the ionic currents in axons, cardiac cells and other excitable tissues.

NASA Discipline Regulatory Physiology↗

NASA NTRS2009

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Samoska, Lorene↗

NASA NTRS2009

Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150 C to +500 C

The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 C to +500 C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.

Neudeck, Philip G.↗

NASA NTRS2022

Pre- and Post-Production Processes Increasingly Dominate Greenhouse Gas Emissions From Agri-Food Systems

We present results from the FAOSTAT emissions shares database, covering emissions from agri-food systems and their shares to total anthropogenic emissions for 196 countries and 40 territories for the period 1990–2019. We find that in 2019, global agri-food system emissions were 16.5 (95 %; CI range: 11–22) billion metric tonnes (GtCO2 eq. yr(exp -1)), corresponding to 31%(range: 19 %–43 %) of total anthropogenic emissions. Of the agri-food system total, global emissions within the farm gate – from crop and livestock production processes including on-farm energy use – were 7.2 GtCO2 eq. yr(exp -1); emissions from land use change, due to deforestation and peatland degradation, were 3.5 GtCO2 eq. yr(exp -1); and emissions from pre- and post-production processes – manufacturing of fertilizers, food processing, packaging, transport, retail, household consumption and food waste disposal – were 5.8 GtCO2 eq. yr(exp -1). Over the study period 1990–2019, agri-food system emissions increased in total by 17 %, largely driven by a doubling of emissions from pre- and post-production processes. Conversely, the FAOSTAT data show that since 1990 land use emissions decreased by 25 %, while emissions within the farm gate increased 9 %. In 2019, in terms of individual greenhouse gases (GHGs), pre- and postproduction processes emitted the most CO2 (3.9 GtCO2 yr(exp -1)), preceding land use change (3.3 GtCO2 yr(exp -1)) and farm gate (1.2 GtCO2 yr(exp -1)) emissions. Conversely, farm gate activities were by far the major emitter of methane (140 MtCH4 yr(exp -1)) and of nitrous oxide (7.8 MtN2Oyr(exp -1)). Pre- and post-production processes were also significant emitters of methane (49 MtCH4 yr(exp -1)), mostly generated from the decay of solid food waste in landfills and open dumps. One key trend over the 30-year period since 1990 highlighted by our analysis is the increasingly important role of food-related emissions generated outside of agricultural land, in pre- and post-production processes along the agri-food system, at global, regional and national scales. In fact, our data show that by 2019, pre- and post-production processes had overtaken farm gate processes to become the largest GHG component of agri-food system emissions in Annex I parties (2.2 GtCO2 eq. yr(exp -1)). They also more than doubled in non-Annex I parties (to 3.5 GtCO2 eq. yr(exp -1)), becoming larger than emissions from land use change. By 2019 food supply chains had become the largest agri-food system component in China (1100 MtCO2 eq. yr(exp -1)), the USA (700 MtCO2 eq. yr(exp -1)) and the EU-27 (600 MtCO2 eq. yr(exp -1)). This has important repercussions for food-relevant national mitigation strategies, considering that until recently these have focused mainly on reductions of non-CO2 gases within the farm gate and on CO2 mitigation from land use change. The information used in this work is available as open data with DOI https://doi.org/10.5281/zenodo.5615082 (Tubiello et al., 2021d). It is also available to users via the FAOSTAT database (https://www.fao.org/faostat/en/#data/EM; FAO, 2021a), with annual updates.

FAOSTAT agri-food systems emissions database↗

DOE OSTI2022

Entropic lens on stabilizer states

The n-qubit stabilizer states are those left invariant by a 2 n -element subset of the Pauli group. The Clifford group is the group of unitaries which take stabilizer states to stabilizer states; a physically motivated generating set, the Hadamard, phase, and controlled-not (cnot) gates which comprise the Clifford gates, impose a graph structure on the set of stabilizers. We explicitly construct these structures, the “reachability graphs,” at n ≤ 5. When we consider only a subset of the Clifford gates, the reachability graphs separate into multiple, often complicated, connected components. Seeking an understanding of the entropic structure of the stabilizer states, which is ultimately built up by cnot gate applications on two qubits, we are motivated to consider the restricted subgraphs built from the Hadamard and cnot gates acting on only two of the n qubits. We show how the two subgraphs already present at two qubits are embedded into more complicated subgraphs at three and four qubits. We argue that no additional types of subgraph appear beyond four qubits, but that the entropic structures within the subgraphs can grow progressively more complicated as the qubit number increases. Starting at four qubits, some of the stabilizer states have entropy vectors which are not allowed by holographic entropy inequalities. Here, we comment on the nature of the transition between holographic and nonholographic states within the stabilizer reachability graphs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Cavity electrodynamics of van der Waals heterostructures

Van der Waals heterostructures host many-body quantum phenomena that are tunable in situ using electrostatic gates. Their constituent two-dimensional materials and gates can naturally form plasmonic self-cavities, confining light in standing waves of current density due to finite-size effects. The plasmonic resonances of typical graphite gates fall in the gigahertz to terahertz range, corresponding to the same microelectronvolt to millielectronvolt energy scale as the phenomena in van der Waals heterostructures that they electrically control. This raises the possibility that the built-in cavity modes of graphite gates are relevant for shaping the low-energy physics of these heterostructures. However, probing these cavity-coupled electrodynamics is challenging as devices are notably smaller than the diffraction limit at the relevant wavelengths. Here we report on the intrinsic cavity conductivity of gate-tunable graphene heterostructures. As the carrier density is tuned, we observe coupling and spectral weight transfer between graphene and graphite plasmonic cavity modes in the ultrastrong coupling regime. We present an analytical model to describe the results and provide general principles for cavity design. Our findings show that intrinsic cavity effects are important for understanding the low-energy electrodynamics of van der Waals heterostructures and open a pathway for useful functionality through cavity control.

Electronic properties and materials↗

DOE OSTI2025

Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration

We report back-end-of-line growth of nanocrystalline diamond (NCD) on ultrawide bandgap (UWBG) high Al content aluminum gallium nitride (AlGaN) channel high electron mobility transistors for thermal management. A thin (∼15 nm) silicon nitride (SiN x ) interlayer was deposited to protect the device surface before performing a low temperature (500 °C) NCD growth process in an attempt to protect the gates on these fully fabricated devices. Notably, atomic force microscopy showed that the maximum lateral grain size exceeded 300 nm even though the film thickness was ∼250 nm. Comparing electrical (DC) performance before and after NCD growth, the gate leakage increased by ∼10 2 after NCD growth. Despite the lower NCD growth temperature, intermixing of the Ni and Au was observed in the Schottky gate metal stack; however, we believe there is another mechanism, possibly hydrogen-related, that is responsible for the measured increase in gate leakage. Regarding thermal management, the device-level thermal resistance (quantified using the average gate temperature rise measured by thermoreflectance imaging) was reduced by 29% through the incorporation of the top-side diamond film. Using time-domain thermoreflectance, the thermal conductivity of the ≈250 nm thick NCD film was measured to be 45 ± 25 W m −1 K −1 . This is expected to be at least 5× greater than the thermal conductivity of the thin disordered AlGaN alloy. There could also be a coupled electrothermal component contributing to the reduced temperature rise from electric field spreading and consequent heat spreading. This study demonstrates a promising first step toward device-level thermal management of high power UWBG Al-rich AlGaN devices.

Lundh, James Spencer [U.S. Naval Research Laborato↗

DOE OSTI2025

Investigating parameter trainability in the SNAP-displacement protocol of a qudit system

Here, in this study, we explore the universality of Selective Number-dependent Arbitrary Phase (SNAP) and Displacement gates for quantum control in qudit-based systems. However, optimizing the parameters of these gates poses a challenging task. Our main focus is to investigate the sensitivity of training any of the SNAP parameters in the SNAP-Displacement protocol. We analyze conditions that could potentially lead to the Barren Plateau problem in a qudit system and draw comparisons with multi-qubit systems. The parameterized ansatz we consider consists of blocks, where each block is composed of hardware operations, namely SNAP and Displacement gates [Fösel et al 2020 Efficient cavity control with snap gates arXiv:2004.14256]. Applying Variational Quantum algorithm (VQA) with observable and gate cost functions, we utilize techniques similar to those in [McClean et al 2018 Barren plateaus in quantum neural network training landscapes Nat. Commun.9 1–6] and [Cerezo et al 2021 Cost function dependent barren plateaus in shallow parametrized quantum circuits. Nat. Commun.12 1–12] along with the concept of t − design. Through this analysis, we make the following key observations: (a) The trainability of a SNAP-parameter does not exhibit a preference for any particular direction within our cost function landscape, (b) By leveraging the first and second moments properties of Haar measures, we establish new lemmas concerning the expectation of certain polynomial functions, and (c) utilizing these new lemmas, we identify a general condition that indicates an expected trainability advantage in a qudit system when compared to multi-qubit systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Minimally entangled state preparation of localized wave functions on quantum computers

Initializing a single site of a lattice scalar field theory into an arbitrary state with support throughout the quantum register requires $O(2^{nQ})$ entangling gates on a quantum computer with $n_Q$ qubits per site. It is conceivable that instead initializing to functions that are good approximations to states may have utility in reducing the number of required entangling gates. In the case of a single site of a noninteracting scalar field theory, initializing to a symmetric exponential wave function requires $n_Q – 1$ entangling gates, the minimal number necessary to create an entangled state of all $n_Q$ qubits. This is compared with the $2^{nQ – 1} + n_Q – 3 + δ_{nQ, 1}$ required for a symmetric Gaussian wave function. In this work, we explore the initialization of one-site $(n_Q = 4)$, two-site $(n_Q = 3)$, and three-site ( n Q = 3 ) noninteracting scalar field theories with symmetric exponential wave functions using IBM's quantum simulators and quantum devices (Poughkeepsie and Tokyo). With the digitizations attainable with $n_Q = 3,4$, these tensor-product wave functions are found to have large overlap with a Gaussian wave function and provide a suitable low-noise initialization for improvement and Somma inflation. Further, in performing these simulations, we have employed a workflow that interleaves calibrations to mitigate systematic errors in production. The calibrations allow tolerance cuts on gate performance including the fidelity of the symmetrizing Hadamard gate, both in vacuum $(|\textbf{0}\gg^{\bigotimes nQ})$ and in medium ($n_Q –1$ qubits initialized to an exponential function). The results obtained in this work are relevant to systems beyond scalar field theories, such as the deuteron radial wave function, two- and three-dimensional Cartesian-space wave functions, and nonrelativistic multinucleon systems built on a localized eigenbasis.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2024

Nonlocal Finite-Depth Circuits for Constructing Symmetry-Protected Topological States and Quantum Cellular Automata

Whether a given target state can be prepared by starting with a simple product state and acting with a finite-depth quantum circuit is a key question in condensed matter physics and quantum information science. It underpins classifications of topological phases, as well as the understanding of topological quantum codes, and has obvious relevance for device implementations. Traditionally, this question assumes that the quantum circuit is made up of unitary gates that are . Inspired by the advent of noisy intermediate-scale quantum devices, we reconsider this question with k - gates, i.e., gates that act on no more than k degrees of freedom but are not restricted to be geometrically local. First, we construct explicit finite-depth circuits of symmetric k -local gates that create symmetry-protected topological (SPT) states from an initial product state. Our construction applies to SPT states protected by global symmetries or subsystem symmetries but not to those with higher-form symmetries, which we conjecture remain nontrivial. Next, we show how to implement arbitrary translationally invariant quantum cellular automata in any dimension using finite-depth circuits of k -local gates. These results imply that the topological classifications of SPT phases and quantum cellular automata both collapse to a single trivial phase in the presence of k -local interactions. We furthermore argue that SPT phases are fragile to k -local symmetric perturbations. We conclude by discussing the implications for other phases, such as fracton phases, and surveying future directions. Our analysis opens a new experimentally motivated conceptual direction examining the stability of phases and the feasibility of state preparation without the assumption of geometric locality. Published by the American Physical Society 2024

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2026

Fast Sideband Control of a Multimode Cavity Memory with Weak Dispersive Coupling to a Transmon

Mitigating ancilla-mediated error channels is a critical challenge in controlling high-quality superconducting cavities using circuit quantum electrodynamics (cQED). We address this by weakening the dispersive coupling while demonstrating fast, high-fidelity multimode control through transmon-mediated sideband interactions. We implement transmon-cavity SWAP gates with speeds up to 30 times larger than the bare dispersive coupling. Combined with transmon rotations, this enables universal state preparation in a single mode, though achieving unitary gates and extending control to multiple modes remains a challenge. In this work, we overcome this limitation by introducing two control strategies: (i) a shelving technique that stores populations in sideband-transparent states, and (ii) a method that exploits the dispersive shift to implement photon-number-selective transmon-cavity SWAP gates. We use these protocols to prepare Fock and binomial code states across any of the ten modes of a multimode cavity with millisecond coherence times—serving as a multimode quantum memory. We demonstrate unitaries that encode and decode an arbitrary qubit state from the transmon into corresponding vacuum and Fock state superpositions, as well as entangled NOON states of cavity mode pairs—a scheme extendable to arbitrary multimode Fock encodings in the cavity modes. Furthermore, we implement a new binomial encoding gate that converts arbitrary transmon superpositions into binomial code states in any cavity mode at a rate exceeding the dispersive shifts in our system, achieving an average post-selected state fidelity of 96.3% in a 4 μ⁢s gate time. By using precalibrated transmon and sideband pulses, our work demonstrates multimode control with significantly reduced calibration overhead, enabling efficient unitary operations using sideband interactions in multimode cQED systems.

Huang, Jordan [Rutgers Univ., Piscataway, NJ (Unit↗

DOE OSTI2025

Genesis: A Compiler Framework for Hamiltonian Simulation on Hybrid CV-DV Quantum Computers

We introduce Genesis, the first compiler designed to support Hamiltonian Simulation on hybrid continuous-variable (CV) and discrete-variable (DV) quantum computing systems. Genesis is a two-level compilation system. At the first level, it decomposes an input Hamiltonian into basis gates using the native instruction set of the target hybrid CV-DV quantum computer. At the second level, it tackles the mapping and routing of qumodes/qubits to implement long-range interactions for the gates decomposed from the first level. Rather than a typical implementation that relies on SWAP primitives similar to qubit-based (or DV-only) systems, we propose an integrated design of connectivity-aware gate synthesis and beamsplitter SWAP insertion tailored for hybrid CV-DV systems. We also introduce an OpenQASM-like domain-specific language (DSL) named CVDV-QASM to represent Hamiltonian in terms of Pauli-exponentials and basic gate sequences from the hybrid CVDV gate set. Genesis has successfully compiled several important Hamiltonians, including the Bose-Hubbard model, Z2−Higgs model, Hubbard-Holstein model, Heisenberg model and Electron-vibration coupling Hamiltonians, which are critical in domains like quantum field theory, condensed matter physics, and quantum chemistry. Our implementation is available at Genesis-CVDV-Compiler https://github.com/ruadapt/Genesis-CVDV-Compiler

Chen, Henry↗

DOE OSTI2023

Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials (Final Report)

In this DOE Early Career project “Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials,” the PI’s group has combined ferroelectric field effect with nanoscale domain imaging and writing to design the electronic and optical properties of two-dimensional (2D) van der Waals materials, including graphene and transition metal dichalcogenides MoS2 and ReS2. The van der Waals materials have been prepared into field effect transistor (FET) devices with ferroelectric gates. Through domain patterning in a ferroelectric polymer PVDF-TrEF top-gate via conductive atomic force microscopy, the team has created programmable Schottky junctions in monolayer MoS 2 , where both barrier height and I-V rectifying polarity can be reconfigured. The transport anisotropy of monolayer to few-layer ReS 2 has been mapped out by defining the entire channel into an insulating state and creating nanoscale conducting paths along different directions through domain writing in the ferroelectric top-gate. The result shows that the conductivity along and perpendicular to the Re-chain can differ by >5.5x10 4 . Theoretical modeling points to the band origin of the transport anomaly and reveals the emergence of a flat band in few-layer ReS 2 . The interfacial epitaxial relation between ReS 2 and PVDF-TrFE further promotes the formation of close-packed, highly ordered PVDF-TrFE nanowires with width of 35 nm and 10 nm. Nonvolatile modulation of quantum Hall effect has been achieved in graphene FETs with a ferroelectric oxide Ba 0.4 Sr 0.6 TiO 3 back-gate. Scattering from the remote surface optical phonon in Ba 0.4 Sr 0.6 TiO 3 limits the room temperature mobility of graphene to be about 3x10 4 cm 2 /Vs. Steep-slope switching has been achieved in MoS 2 FETs back-gated by polycrystalline Pb(Zr,Ti)O 3 , which signals a static-state negative capacitance mode without involving an additional dielectric layer. Piezoresponse force microscopy studies show that the sub-threshold swing can be well correlated with the domain wall density in Pb(Zr,Ti)O 3 . The team also observes an unconventional filtering effect of the second harmonic generation response at the MoS 2 /Pb(Zr,Ti)O 3 heterointerface, which can be accounted for by the alignment between one of the polar axes of MoS 2 and the chiral dipole rotation at the surface of domain wall in Pb(Zr,Ti)O 3 . The research supported by this DOE grant has significantly advanced the fundamental understanding and functional design of ferroelectric/2D van der Waals heterostructures for their implementation towards energy applications.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2025

Quantum Information for Fusion Energy Sciences (Final Technical Report)

The simulation of plasma dynamics is a critical area of Fusion Energy Sciences (FES) due to it’s usefulness in predicting, controlling, and confining plasmas in the context of potential fusion reactors. The simulation of plasmas is a computationally difficult problem in both classical and quantum physics, motivating investigation into the potential of quantum computers to simulate these systems. This project took several concrete steps towards this goal by developing tools for improving the control, characterization, and calibration of quantum gates on a superconducting quantum computer, developing error suppression and mitigation tools to reduce errors on the quantum computer, and utilizing these advancements to simulate reduced models of plasma dynamics on the quantum computer. In order to efficiently simulate plasma physics, an optimal control method which synthesizes, directly at the pulse level, any quantum gate on qubit and qutrit systems was developed. Using four superconducting transmon quantum processors at Rigetti and LLNL, it was demonstrated that any arbitrary quantum gate on qubits and qutrits could be implemented with high fidelity, leading to a significantly reduced length of a gate sequence. A problem of interest in FES is the nonlinear optical process of laser pulse compression within a plasma. Since quantum physics is linear, simulating nonlinear operations is not naturally feasible on a quantum computer, however it is possible to simulated a quantized version of the nonlinear process. A quantization approach to convert nonlinear wave-wave interaction problems to Hamiltonian simulation problems was developed and demonstrated using two qubits on a Rigetti device. In this experiment, a number of error suppression and mitigation techniques were investigated to determine how best to utilize the finite quantum resources. This study provides an example of how plasma problems may be solved on near-term, noisy quantum computing platforms and identified a promising set of techniques. Building on the insights of these experiments, the investigation turned to linear electron-plasma wave physics. A connection was identified between a local one-dimensional lattice spin model and linear wave phenomena, allowing a plasma physics problem to be efficiently mapped to the quantum computer. In this framework, reflection and transmission of plasma waves at a sharp boundary was studied, as well as the propagation of waves through an inhomogeneous plasma medium. In addition to the suite of error suppression and mitigation techniques developed, this experiment introduced the use of a digital-analog gate scheme designed to efficiently simulate the plasma Hamiltonian. With hardware available at the conclusion of the project, simulation at the scale of 9 qubits and 15 timesteps (60 entangling layers) was achieved.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Robust resonator-assisted ZZ cancellation in superconducting quantum processors

Strong qubit interactions are essential for faster two-qubit gates, but they often come with undesirable ZZ interactions that limit gate fidelity. Existing methods to mitigate these interactions, such as flux-tunable couplers, can introduce additional noise and complexity. In contrast, our work presents a simpler, more robust approach using a driven resonator to cancel the static ZZ interaction between qubits [1]. The experiment was performed on a revised 9-qubit quantum processing unit from Rigetti, developed in collaboration with SQMS scientists. We validate the resonator-induced-phase (RIP) interaction, where an off-resonant drive on the resonator dynamically cancels ZZ coupling. This marks an important step toward high gate fidelities. We also explore the entangling gates enabled by this coupling scheme, focusing on minimizing gate duration and qubit decoherence while maintaining effective ZZ cancellation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗