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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Thermodynamically self-consistent non-stochastic micromagnetic model for the ferromagnetic state

In this work, a self-consistent thermodynamic approach to micromagnetism is presented. The magnetic degrees of freedom are modeled using the Landau-Lifshitz-Baryakhtar theory, which separates the different contributions to the magnetic damping, and thereby allows them to be coupled to the electron and phonon systems in a self-consistent way. We show that this model can quantitatively reproduce ultrafast magnetization dynamics in Nickel suggesting that in ferromagnetic metals the ultrafast angular momentum transfer happens via the relativistic spin-electron scattering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room temperature ferromagnetic and ferroelectric properties of Bi{sub 1−x}Ca{sub x}MnO{sub 3} thin films

Bi{sub 1−x}Ca{sub x}MnO{sub 3} (BCMO) thin films with x = 0, 0.1, 0.2, 0.3 and 0.4 are successfully deposited on the n-type Si (100) substrate at two different temperatures of 400 °C and 800 °C using RF magnetron sputtering. The stoichiometry of the films and oxidation state of the elements have been described by X-ray photoelectron spectroscopy analysis. Dielectric measurement depicts the insulating property of BCMO films. Magnetic and ferroelectric studies confirm the significant enhancement in spin orientation as well as electric polarization at room temperature due to incorporation of Ca{sup 2+} ions into BiMnO{sub 3} films. The BCMO (x = 0.2) film grown at 400 °C shows better magnetization (M{sub sat}) and polarization (P{sub s})with the measured values of 869 emu / cc and 6.6 μ{sub C}/ cm{sup 2} respectively than the values of the other prepared films. Thus the realization of room temperature ferromagnetic and ferroelectric ordering in Ca{sup 2+} ions substituted BMO films makes potentially interesting for spintronic device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ferromagnetic-organic interfacial states and their role on low voltage current injection in tris-8-hydroxyquinloline (Alq{sub 3}) organic spin valves

Organic Spin Valves (OSVs) operate at small bias (<100 mV) when carrier injection should not occur due to injection barriers and in built potentials. We explore the consequences of hybrid-interface states between a ferromagnetic electrode and an organic semiconductor in OSV carrier injection. By temperature-dependent Dark Injection measurements, we observe hole trapping due to these filled states and measure a low thermal activation energy (∼100 meV) of the carrier density within OSVs. The small injection barrier is consistent with a significant interfacial potential, due to hybrid-interface state filling, overcoming the injection barrier due to the electrode work function—transport level mismatch.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Tunable ferromagnetic and antiferromagnetic interfacial exchange coupling in perpendicularly magnetized L1{sub 0}-MnGa/Co{sub 2}FeAl Heusler bilayers

In this work, we report a tailorable exchange coupling (J{sub ex}) at the Mn{sub 62}Ga{sub 38}/Co{sub 2}FeAl interface, where Mn{sub 62}Ga{sub 38} and Co{sub 2}FeAl alloys are tetragonal Heusler alloy with high perpendicular magnetic anisotropy and typical cubic Heusler alloy with soft magnetism, respectively. As the post annealing temperature (T{sub a}) is lower than 375 °C, the J{sub ex} is ferromagnetic with strength controllable from 7.5 to 0.5 erg/cm{sup 2}. Interestingly, as T{sub a} increases higher than 400 °C, an antiferromagnetic J{sub ex} of −5.5 erg/cm{sup 2} is observed. The ferromagnetic/antiferromagnetic transition is further evidenced by the spin dependent transport property of the magnetic tunnel junctions with Mn{sub 62}Ga{sub 38}/Co{sub 2}FeAl as electrode. Based on structure characterization, the variation of J{sub ex} during annealing is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Ferromagnetic spin coupling in the chromium dimer cation: Measurements by photodissociation spectroscopy combined with coupled-cluster calculations

The magnetic coupling of the chromium dimer cation, Cr{sub 2}{sup +}, has been an outstanding problem for decades. An optical absorption spectrum of Cr{sub 2}{sup +} has been obtained by photodissociation spectroscopy in the photon-energy range from 2.0 to 5.0 eV. Besides, calculations have been performed by the equation-of-motion coupled-cluster singles and doubles method for vertical excitation of the species. Their coincidence supports our assignment that the ground electronic state exhibits a ferromagnetic spin coupling, which is contrary to those of neutral and negatively charged dimers, Cr{sub 2} and Cr{sub 2}{sup −}, in their lowest spin states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Exploring electrical conductivity anomalies across the martensite transition in Fe{sub 7}Pd{sub 3} ferromagnetic shape memory alloys: Experiments and ab-initio calculations

Conductivity in Fe{sub 7}Pd{sub 3} is characterized by an anomalous increase when traversing the face–centered–cubic (fcc) austenite to face–centered–tetragonal (fct) martensite transition, contrary to most other conventional and ferromagnetic shape memory alloys. Experiments on molecular– beam–epitaxy–grown single crystals indicate a resistivity change of ≈20% during the transformation on top of a quadratic temperature dependence reaching up to room temperature. The physical foundations of residual resistivity changes along the full Bain path are addressed by a Kubo– Greenwood approach within the framework of density functional theory. To do so, a concept to reliably extract the DC conductivities is proposed that yields reproducible results consistent with experiments. Finding that conductivity peaks in the fct phase, we identify a large density of states paired with high velocities at the Fermi level in the majority spin sub–bands in presence of minimum s–d electron scattering as underlying physical origin.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb{sup 3+}, Tm{sup 3+}, Sm{sup 3+}, and Ho{sup 3+} ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr{sup 3+} and Fe{sup 3+} impurities. The samples 5 × 5 mm{sup 2} were positioned in the classical straws and within an estimated accuracy of 10{sup −6 }emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb{sup 3+} ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Epitaxial wurtzite-MgZnO barrier based magnetic tunnel junctions deposited on a metallic ferromagnetic electrode

An epitaxial wurtzite (WZ) Mg{sub 0.23}Zn{sub 0.77}O barrier based magnetic tunnel junction (MTJ), with electrode-barrier structure of Co{sub 0.30}Pt{sub 0.70} (111)/Mg{sub 0.23}Zn{sub 0.77}O (0001)/Co (0001), was fabricated. The good crystallinity and tunneling properties were experimentally confirmed. Electrical and magnetic investigations demonstrated its high resistance-area product of 1.05 MΩ μm{sup 2}, a maximum tunneling magneto-resistance (TMR) of 35.5%, and the existence of localized states within the tunneling barrier producing TMR rapid decrease and oscillation when increasing the applied bias voltage. The TMR value almost vanished at 200 K, which was attributed to the induced moment and strong spin-orbit coupling in Pt atoms at the Co{sub 0.30}Pt{sub 0.70}/Mg{sub 0.23}Zn{sub 0.77}O interface. Owing to the ferroelectric behavior in WZ-MgZnO materials, the fabrication of WZ-MgZnO barrier based MTJs deposited on a metallic ferromagnetic electrode will open routes for electrically controllable non-volatile devices that are compatible with CMOS technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Observation of inverse spin Hall effect in ferromagnetic FePt alloys using spin Seebeck effect

We experimentally observed the inverse spin Hall effect (ISHE) of ferromagnetic FePt alloys. Spin Seebeck effect due to the temperature gradient generated the spin current (J{sub s}) in the FePt|Y{sub 3}Fe{sub 5}O{sub 12} (YIG) structure, and J{sub s} was injected from YIG to FePt and converted to the charge current through ISHE of FePt. The significant difference in magnetization switching fields for FePt and YIG led to the clear separation of the voltage of ISHE from that of anomalous Nernst effect in FePt. We also investigated the effect of ordering of FePt crystal structure on the magnitude of ISHE voltage in FePt.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Barkhausen-like antiferromagnetic to ferromagnetic phase transition driven by spin polarized current

We provide clear evidence for the effect of a spin polarized current on the antiferromagnetic to ferromagnetic phase transition of an FeRh wire at Co/FeRh wire junctions, where the antiferromagnetic ground state of FeRh is suppressed by injecting a spin polarized current. We find a discrete change in the current-voltage characteristics with increasing current density, which we attribute to the Barkhausen-like motion of antiferromagnetic/ferromagnetic interfaces within the FeRh wire. The effect can be understood via spin transfer, which exerts a torque to the antiferromagnetic moments of FeRh, together with non-equilibrium magnetic effective field at the interface. The conclusion is reinforced by the fact that spin unpolarized current injection from a nonmagnetic Cu electrode has no effects on the antiferromagnetic state of FeRh.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhancement of magnetoresistance and ferromagnetic coupling in the complex perovskites CaCu{sub 3}(Mn{sub 4−x}Al{sub x})O{sub 12} (x = 0, 0.2, 0.4, and 0.6): A neutron diffraction study

New compounds of the series CaCu{sub 3}(Mn{sub 4−x}Al{sub x})O{sub 12} have been prepared under high pressure conditions (2 GPa), in the presence of KClO{sub 4} as oxidizing agent to stabilize Mn{sup 3+,4+} mixed valence. The polycrystalline samples have been characterized by x-ray diffraction, neutron powder diffraction (NPD), magnetic, and magnetotransport measurements. All the samples are cubic, space group Im-3. These oxides adopt a superstructure of ABO{sub 3} perovskite given by the long-range 1:3 ordering of Ca{sup 2+} and Cu{sup 2+} ions at the A sublattice. The NPD study for x = 0.4 shows that Al{sup 3+} ions are statistically distributed at the octahedral positions, being the (Mn,Al)O{sub 6} octahedra strongly tilted, with superexchange (Mn,Al)-O-(Mn,Al) angles of 142.1°. Also, neutron data clearly show that some Mn{sup 3+} ions (0.65(2) per formula) are located together with Cu{sup 2+} at the square-planar 6b positions. Regarding the magnetic properties, all the compounds present a spontaneous increase of the magnetization below T{sub C}, typical of ferro-or ferrimagnetic materials, with T{sub C} decreasing upon Al introduction. The magnetic structure determined from low-temperature NPD data unveils a ferromagnetic coupling between (Cu{sup 2+}, Mn{sup 3+}){sub 6b} spins and Mn{sub 8c} spins at octahedral positions; this is in contrast with the ferrimagnetic structure observed for RCu{sub 3}Mn{sub 4}O{sub 12} and CaCu{sub 3}Mn{sub 4}O{sub 12}, where an AFM coupling is observed between both magnetic sublattices. Interestingly, an enhancement of the magnetoresistance effect is observed for x = 0.2, well beyond that found for the parent compound. This effect, in materials subtly doped with non-magnetic elements at the Mn positions, may be of interest for applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Epitaxial ferromagnetic Fe{sub 3}Si on GaAs(111)A with atomically smooth surface and interface

Single crystal ferromagnetic Fe{sub 3}Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe{sub 3}Si/GaAs(111) yielded a saturation moment of 990 emu/cm{sup 3} with a small coercive field ≤1 Oe at room temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Irreversible magnetization switching at the onset of superconductivity in a superconductor ferromagnet hybrid

We demonstrate that the magnetic state of a superconducting spin valve, that is normally controlled with an external magnetic field, can also be manipulated by varying the temperature which increases the functionality and flexibility of such structures as switching elements. In this case, switching is driven by changes in the magnetostatic energy due to spontaneous Meissner screening currents forming in the superconductor below the critical temperature. Our scanning Hall probe measurements also reveal vortex-mediated pinning of the ferromagnetic domain structure due to the pinning of quantized stray fields in the adjacent superconductor. The ability to use temperature as well as magnetic field to control the local magnetisation structure raises the prospect of potential applications in magnetic memory devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Evidence for ferromagnetic coupling at the doped topological insulator/ferrimagnetic insulator interface

One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (T{sub c}). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi{sub 2}Se{sub 3} by means of proximity to the high-T{sub c} ferrimagnetic insulator (FMI) Y{sub 3}Fe{sub 5}O{sub 12} and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi{sub 2−x}Cr{sub x}Se{sub 3}/Y{sub 3}Fe{sub 5}O{sub 12} interface. We found that the Bi{sub 2−x}Cr{sub x}Se{sub 3} grown on Y{sub 3}Fe{sub 5}O{sub 12}(111) predominately contains Cr{sup 3+} cations, and the spin direction of the Cr{sup 3+} is aligned parallel to that of tetrahedral Fe{sup 3+} of the YIG, revealing a ferromagnetic exchange coupling between the Bi{sub 2−x}Cr{sub x}Se{sub 3} and the Y{sub 3}Fe{sub 5}O{sub 12}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Ferromagnetic ordered phase of quantum spin ice system Yb{sub 2}Ti{sub 2}O{sub 7} under [001] magnetic field

Measurements of magnetization (M) and specific heat (C) under a [001] magnetic field were carried out on a single crystal of a quantum spin ice system Yb{sub 2}Ti{sub 2}O{sub 7} in order to investigate a feature of the transition occurred at T{sub C} ∼ 0.2 K. As a result of applying the magnetic field μ{sub 0}H < 0.1 T, the C/T − T curve structure and transition temperature barely changed. On the other hand, applying the more than 0.1 T magnetic field, the C/T − T curve structure drastically change from sharp peak structure to broad peak one, and the broad peak temperature of C/T − T curves linearly increases with increasing magnetic field (H). In the magnetic field μ{sub 0}H < 0.1 T, the magnetization drastically increases around T{sub C} ∼ 0.2 K with decreasing T, and a thermal hysteresis loop of the M − T curve is observed. With increasing H, the thermal hysteresis loop of the M − T curves disappears above μ{sub 0}H{sub C} = 0.1 T. We can understand these results, where Yb{sub 2}Ti{sub 2}O{sub 7} exhibits a first-order ferromagnetic transition associated with the latent heat corresponding to the energy of μ{sub 0}H{sub C} = 0.1 T. Basis of the H − T phase diagram along [001] magnetic field, the feature of the transition occurred at T{sub C} ∼ 0.2 K in quantum spin ice system Yb{sub 2}Ti{sub 2}O{sub 7} is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Shock wave induced martensitic transformations and morphology changes in Fe-Pd ferromagnetic shape memory alloy thin films

Combining experimental methods and classical molecular dynamics (MD) computer simulations, we explore the martensitic transformation in Fe{sub 70}Pd{sub 30} ferromagnetic shape memory alloy thin films induced by laser shock peening. X-ray diffraction and scanning electron microscope measurements at shock wave pressures of up to 2.5 GPa reveal formation of martensitic variants with preferred orientation of the shorter c-axis of the tetragonal unit cell perpendicular to the surface plane. Moreover, consequential merging of growth islands on the film surface is observed. MD simulations unveil the underlying physics that are characterized by an austenite-martensite transformation with a preferential alignment of the c-axis along the propagation direction of the shock wave, resulting in flattening and in-plane expansion of surface features.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Spin-torque driven magnetization switching in ferromagnetic nanopillar with pinned layer biasing configuration

Magnetization switching driven by spin transfer torque in a ferromagnetic nanopillar by biasing the angular polarizer with different orientation has been studied. The free layer dynamics includes the spin torque from the oscillating free layer with magneto crystalline anisotropy and shape anisotropy, which is governed by the Landau-Lifshitsz-Gilbert-Slonczweski (LLGS) equation and solving it numerically by using embedded Runge Kutta fourth order method. Results of numerical simulation shows that there is a drastic reduction of switching time in the free layer by the orientation of angular polarizer of the nano pillar device. We fixed the angular polarizer as 0°, 30°, 60°, 90° and the corresponding switching time is 6.53 ns, 4.36 ns, 2.25 ns and 1.21 ns respectively for an applied current density of 5 × 10{sup 11} Am{sup −2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electronic structure study of wide band gap magnetic semiconductor (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} nanocrystals in paramagnetic and ferromagnetic phases

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} near Fermi-level. XMCD results indicate that Mn{sup 3+} and Mn{sup 4+} spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below T{sub C}. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗