A Tri-Layer Filter Structure for Individual Device Biasing of Subharmonically-Pumped Mixers Employing Antiparallel-Pair Diodes
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antiparallel-pair diodes schottky diodes subharmon↗
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Results for “Diodes”
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Transit-time considerations in p-i-n diodes.
Frequency response of p-i-n photodiode, taking account of mobility and nonuniform generation of carriers in i region
P-I-N DIODE↗
Harmonic balance optimization of terahertz Schottky diode multipliers using an advanced device model
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Schottky diode multiplier terahertz source teraher↗
Planar GaAs Schottky diode frequency multiplier chains up to 3THz
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Schottky diode multipliers↗
THz frequency multiplier chains based on planar Schottky diodes
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Schottky diode multipliers↗
Theory of spin filtering in non-magnetic resonant tunneling diodes
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spin filters diodes↗
200 and 400 GHz Schottky Diode Multipliers Fabricated with Integrated Air-Dielectric (Substrateless) Circuitry
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Schottky diode Air-Dielectric Circuitry↗
200 and 400 GHz Schottky diode multipliers fabricated with integrated air-dielectric (substrateless) circuitry
Viewgraph presentation.
Schottky diodes Air-Dielectric Circuitry↗
Planor-Diode Mixers and Multipliers for Spaceborne Submillimeter-Wave Radiometry
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Planar-Diode Mixer Radiometry↗
200, 400 and 800 GHz Schottky diode substrateless multipliers: design and results
Several sub-millimeter doubler circuits have been designed and built using a new fabrication technology.
Schottky diodes multipliers monolithic circuits↗
2.7 THz waveguide tripler using monolithic membrane diodes
The description and performance of an 850 to 2550 GHz waveguide tripler is presented.
THz multiplier membrane diode↗
200 MGHz Waveguide Based Subharmonic Mixers with Planetary Schottky Diodes: Recent Progress
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subharmonic mixers schottsky diodes quid↗
Planar GaAs Schottky Diodes Integrated with Quartz Substrate Circuitry for Waveguide Subharmonic Mixers at 215 GHz
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fabrication procedure GaAs active device hybrid-su↗
A Back-To-Back Barrier-N-N+ (bbBNN)Diode Tripler at 200 GHz
This paper describes the performance of planar back-to-back Barrier-N-N+ (bbBNN) devices for mm and submm wave multiplier applications. A technique has been developed for characterizing planar bbBNN devices with Vector Network Analyzer, which gives both the series resistance and voltage dependent capacitance of the device.
Diode Tripler↗
Construction of a Three-Diode-Laser Terahertz Difference-Frequency Synthesizer and its Application Toward Spectroscopy of Ammonia in the V(sub 2) States
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diode laser far infrared source Terahertz Differen↗
Construction of a Three-Diode-Laser Terahertz Dirrerence-Frequency Synthesizer
An all-solid-state, high-resolution and frequency-calibrated THz spectrometer based on optical heterodyne in low-temperature-grown (LTG) GaAs been constructed.
THz-waves diode lasers photomixing source calibrat↗
Approaches to Obtain Tunable Diode Lasers for Air Monitoring Between 2 and 2.5 um on InP
Alternative approaches for developing 2.0- 2.5 um single frequency semicondoctor lasers are reviewed.
tunable diode lasers air monitoring semiconductor ↗
Planar diode multiplier chains for THz spectroscopy
High-resolution laboratory spectroscopy is utilized as a diagnostic tool to determine noise and harmonic content of balanced [9]-[11] and unbalanced [12]-[14] multiplier designs. Balanced multiplier designs suppress unintended harmonics more than -20dB. Much smaller values were measured on unbalanced multipliers.
high-resolution spectroscopy↗