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At least 991 records · Page 55

From linear mechanics to nonlinear mechanics

Consideration is given to the techniques used in telecommunication where a nonlinear system (the modulator) results in a linear transposition of a signal. It is then shown that a similar method permits linearization of electromechanical devices or nonlinear mechanical devices. A sweep function plays the same role as the carrier wave in radio-electricity. The linearizations of certain nonlinear functionals are presented.

RESEARCH TECHNIQUE, MATHEMATICS↗

High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

Si/Ge/Si n-type modulation doped field effect structures and transistors (n-MODFET's) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm(exp 2)/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rm's roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 micron gate lengths and 200 micron gate widths were fabricated and tested.

Mueller, Carl↗

Light Management in Bifacial Photovoltaics with Spectrally Selective Mirrors

Spectrally-selective mirrors that simultaneously provide above-bandgap anti-reflection and sub-bandgap light rejection are tested for their ability to provide passive cooling to partially sub-bandgap transparent bifacial photovoltaics. The optical and thermal benefits of both idealized and real, low-complexity spectrally-selective mirrors on single-axis tracking, bifacial PERC arrays under realistic conditions are tested via rigorous finite element simulations. Four- and six-layer mirror designs increased carrier generation beyond what traditional antireflection coatings can provide without the associated cell heating. Here, idealized mirrors were found to provide up to 2.4 °C of cooling when included on both air/glass interfaces of the bifacial module.

14 SOLAR ENERGY↗

All-electric spin modulator based on a two-dimensional topological insulator

We propose and investigate a spin modulator device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-polarization direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and all-electric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarization rotator by replacing the drain electrode with a non-magnetic material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural and Dynamical Design Principles for Iron-Sulfur Clusters in Sequence Defined Polymers

This integrated synthetic and computational effort uses sequence defined polymers such as peptoids, and triazines, capable of mimicking a flexible protein environment to control the positioning of side chains around redox cofactors. This strategy will allow modulation of redox properties through both direct and indirect mechanisms. To this end the aim is defined to test the underlying hypothesis: that principles and critical functionalities governing the binding and tuning of naturally occurring electron carrier co-factors can be identified and used to predictably design and synthesize maquettes based on non-natural polymers resulting in new modular biomimetic scaffolds for Electron Transfer Materials. This will be achieved through design and synthesis of ligands that can stabilize iron-sulfur clusters and tune the redox potential based on sequence.

36 MATERIALS SCIENCE↗

A review of ionospheric effects on Earth-space propagation

A short description is given of each ionospheric total electron content (TEC) effect upon radio waves, along with a representative value of the magnitude of each of these effects under normal ionospheric conditions. A discussion is given of the important characteristics of average ionospheric TEC behavior and the temporal and spatial variability of TEC. Radio waves undergo several effects when they pass through the Earth's ionosphere. One of the most important of these effects is a retardation, or group delay, on the modulation or information carried on the radio wave that is due to its encounter with the free, thermal electrons in the Earth's ionosphere. Other effects the ionosphere has on radio waves include: radio frequency (RF) carrier phase advance; Doppler shift of the RF carrier of the radio wave; Faraday rotation of the plane of polarization of linearly polarized waves; angular refraction or bending of the radio wave path as it travels through the ionosphere; and amplitude and phase scintillations.

Klobuchar, J. A.↗

Diode laser array

A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as to maximize the magnitude of the loss modulation and the differential gain in the gain sections. The array is operated by applying a DC bias to all the gain sections at a level just below the threshold of the gain sections to only one of the gain sections which raises the bias in all of the gain sections to a level that causes all of the gain sections to oscillate. Thus, a small bias can turn the array on and off.

Carlson, Nils W.↗

Bifacial Photovoltaic Module Degradation Dynamics

In a comprehensive study conducted at NREL's 75 kW bifacial single-axis-tracked field, accelerated degradation was observed in four out of five bifacial silicon photovoltaic (PV) module technologies when compared to their monofacial counterparts. Root cause analysis of accelerated bifacial degradation involved various analytical tools and techniques. This included employing RdTools to identify rates of power loss, conducting measurements on fielded and control modules using infrared imaging, electroluminescence (EL) and photoluminescence (PL), quantum efficiency (QE) analysis, IV-curves assessment, as well as utilizing handheld Raman and reflectance measurement targeted at anti-reflective coating. Most cases pointed to carrier lifetime degradation causing Voc loss and simultaneous Isc loss. In some cases, Isc further decreases likely due to optical effects from encapsulant degradation. The outcomes and methodologies employed in this investigation are documented in this publication. This study's significance is further emphasized by placing the findings within the broader context of the performance and degradation of various bifacial systems, as identified in the PV Fleets data.

bifacial↗

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic ({beta}) and hexagonal ({alpha}) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 deg. C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 deg. C. Core-level photoelectron spectroscopy of Si{sub x}N{sub y} layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors ({approx}1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively.

36 MATERIALS SCIENCE↗

More About Fixed-Lag Smoothers For Tracking Carriers

Performance in presence of fades improved. Report amplifies and extends subject matter of "Performance of Fixed-Lag Phase-Smoothing Algorithms" (NPO-17202). Fixed-lag smoothers also used to mitigate effects of short, deep fades, including multipath effects, in mobile or fixed terrestrial receivers of frequency- or phase-modulated signals.

Kumar, Rajendra↗

Solution‐Processed Spin‐Polarized Light‐Emitting Diodes of Colloidal Quantum Wells and Magnetic Nanoparticles

Electrical injection of spin-polarized carriers into semiconductors enables circularly-polarized emission from spin-polarized light-emitting diodes (spin-LEDs). The incredible level of tunability of magnetic and electronic properties in colloidal nanocrystals offers unprecedented opportunities for the modulation of polarization of light in solution-processed spin-LEDs based on magnetic nanoparticles unlike epitaxially grown spin-LEDs restricted by a very limited range of materials for their exploitation, and solution-processed spin-LEDs based on chiral molecules, which do not allow the modulation of polarization in general. Here, it is shown that electrical injection of spin-polarized electrons from magnetic Fe 3 O 4 nanoparticles into CdSe/CdZnS core/shell colloidal quantum wells (CQWs) in solution-processed LEDs that allows for polarization modulation of electroluminescence. In this structure, a monolayer of face-down oriented CQWs is deposited as an active layer to avoid polarization losses due to the hopping of the electrons between the CQWs before the radiative recombination process. In this solution-processed spin-LED, the circular polarization reaches 4.5% at 3 K and survives up to 100 K. A net circular polarization is observed at zero magnetic field up to 100 K because of the remnant magnetization of the Fe 3 O 4 nanoparticles. This new colloidal spin-LED architecture presents significant prospects for future solution-processed advanced opto-spintronic devices.

circularly polarized electroluminescence↗

A Natural 2D Heterostructure [Pb 3.1 Sb 0.9 S 4 ][Au x Te 2– x ] with Large Transverse Nonsaturating Negative Magnetoresistance and High Electron Mobility

We report the two-dimensional (2D) natural hetero-structure [Pb 3.1 Sb 0.9 S 4 ][Au$_x$Te$_{2-x}$] ($x$ = 0.52-0.36) which shows anomalous, transverse nonsaturating negative magnetoresistance (MR). For $x$ = 0.52, the material has a commensurately modulated structure with alternating [Pb3.1Sb0.9S4] rocksalt layers and atomically thin [Au$_x$Te$_{2-x}$] sheets, as determined by single-crystal X-ray diffraction using a (3 + 1)-dimensional space group; for other $x$ compositions, the modulated structure is absent and the Au and Te atoms are disordered. The transport properties in this system at low temperature (<100 K) are dominated by an unusual 2D hopping mechanism, while at room temperature a high carrier mobility of similar to ~1352 cm 2 V -1 s -1 obtained ($x$ = 0.36). The confined electrons within the [Au$_x$Te$_{2-x}$] layers are also exposed to interlayer coupling with the insulating [Pb 3.1 Sb 0.9 S 4 ] layers, and as a result, the properties of the heterostructures emerge not only from the constituent layers but also the interactions between them. Furthermore, the various Au and Te coordination patterns found in the [Au$_x$Te$_{2-x}$] sheets as a function of $x$ further contribute to a unique electronic structure that leads to the anomalous nonsaturating negative MR with different field dependent behaviors. First-principles calculations indicate that the [Au$_x$Te$_{2-x}$] sheets are responsible for the unusual electrical transport properties in this 2D system.

2D materials↗

Ultrafast all-optical diffraction switching using semiconductor metasurfaces

Ultrafast all-optical switching using Mie resonant metasurfaces requires both on-demand tunability of the wavefront of the light and ultrafast time response. However, devising a switching mechanism that has a high contrast between its “on” and “off” states without compromising speed is challenging. Here, we report the design of a tunable Mie resonant metasurface that achieves this behavior. Our approach utilizes a diffractive array of semiconductor resonators that support both dipolar and quadrupolar Mie resonances. By balancing the strengths of the dipole and quadrupole resonances, we can suppress radiation into the first diffraction order, thus creating a clearly delineated “off”-state at the operating wavelength. Then, we use optical injection of free- carriers to spectrally shift the multipoles and rebalance the multipole strengths, thereby enabling radiation into the diffraction order—all on an ultrafast timescale. We demonstrate ultrafast off-to-on switching with I on /I off ≈ 5 modulation of the diffracted intensity and ultrafast on-to-off switching with Ion/Ioff ≈ 9 modulation. Furthermore, both switches exhibit a fast τ tr ≈ 2.7 ps relaxation time at 215 μJ cm -2 pump fluence. Further, we show that for higher fluences, the temporal response of the metasurface is governed by thermo-optic effects. This combination of multipole engineering with lattice diffraction opens design pathways for tunable metasurface-based integrated devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A generalized formulation of minimum shift keying modulation

The modulator structure consisting of a single-input two-output sequential transducer whose output sequences control the modulated signal in the manner s(t) = x(i)p(t) + y(i)q(t) is considered. Here, iT is less than or equal to t, which is less than iT + T, where T is the modulation bit duration and where x(i) and y(i) take values in /+1, -1, 0/. The behavior of a sequential transducer is characterized by means of a 'trellis'. It is shown that, provided only that the 'carriers' p(t) and q(t) have the same energy in every bit interval, the optimum demodulator for the additive white Gaussian noise channel need process the received signal over only two bit intervals in making each data bit decision. It is demonstrated that particular choices of the sequential transducer yield differential minimum shift keying and differential staggered quadriphase shift keying. Possible generalizations of this approach are discussed.

Massey, J. L.↗

622-Mbps Orthogonal Frequency Division Multiplexing (OFDM) Digital Modem Implemented

Future generation space communications systems feature significantly higher data rates and relatively smaller frequency spectrum allocations than systems currently deployed. This requires the application of bandwidth- and power-efficient signal transmission techniques. There are a number of approaches to implementing such techniques, including analog, digital, mixed-signal, single-channel, or multichannel systems. In general, the digital implementations offer more advantages; however, a fully digital implementation is very difficult because of the very high clock speeds required. Multichannel techniques are used to reduce the sampling rate. One such technique, multicarrier modulation, divides the data into a number of low-rate channels that are stacked in frequency. Orthogonal frequency division multiplexing (OFDM), a form of multicarrier modulation, is being proposed for numerous systems, including mobile wireless and digital subscriber link communication systems. In response to this challenge, NASA Glenn Research Center's Communication Technology Division has developed an OFDM digital modem (modulator and demodulator) with an aggregate information throughput of 622 Mbps. The basic OFDM waveform is constructed by dividing an incoming data stream into four channels, each using either 16- ary quadrature amplitude modulation (16-QAM) or 8-phase shift keying (8-PSK). An efficient implementation for an OFDM architecture is being achieved using the combination of a discrete Fourier transform (DFT) at the transmitter to digitally stack the individual carriers, inverse DFT at the receiver to perform the frequency translations, and a polyphase filter to facilitate the pulse shaping.

Kifle, Muli↗

Implementation of a 622 Mbps Digital Modem

This paper presents the implementation and initial test results of an Orthogonal Frequency Division Multiplexing (OFDM) digital modem (modulator and demodulator) with an aggregate information throughput of 622 megabits per second (Mbps). The OFDM waveform is constructed by dividing an incoming data stream into four channels, each channel using either a 16-ary Quadrature Amplitude Modulation (16QAM) scheme or an 8-Phase Shift Keying (8PSK) scheme. The generation and detection of the composite waveform are performed using Discrete Fourier Transform (DFT) and polyphase filtering, to digitally stack and band-limit the individual carriers respectively. The four-channel OFDM approach enables the implementation of a modem that can be both power and bandwidth efficient, with sufficient parallelism to meet higher data rate goals. As a result, the OFDM modem requires only a 240 MHz bandwidth to transmit 622 Mbps. Hardware and simulation results in the form of spectrum diagrams and bit-error-rate (BER) curves are also presented in this paper.

Kifle, Muli↗

Exploring ν signals in dark matter detectors

We investigate standard and non-standard solar neutrino signals in direct dark matter detection experiments. It is well known that even without new physics, scattering of solar neutrinos on nuclei or electrons is an irreducible background for direct dark matter searches, once these experiments reach the ton scale. Here, we entertain the possibility that neutrino interactions are enhanced by new physics, such as new light force carriers (for instance a ''dark photon'') or neutrino magnetic moments. We consider models with only the three standard neutrino flavors, as well as scenarios with extra sterile neutrinos. We find that low-energy neutrino-electron and neutrino-nucleus scattering rates can be enhanced by several orders of magnitude, potentially enough to explain the event excesses observed in CoGeNT and CRESST. We also investigate temporal modulation in these neutrino signals, which can arise from geometric effects, oscillation physics, non-standard neutrino energy loss, and direction-dependent detection efficiencies. We emphasize that, in addition to providing potential explanations for existing signals, models featuring new physics in the neutrino sector can also be very relevant to future dark matter searches, where, on the one hand, they can be probed and constrained, but on the other hand, their signatures could also be confused with dark matter signals.

79 ASTRONOMY AND ASTROPHYSICS↗