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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Effects of Cooling Rate on 6.5% Silicon Steel Ordering

Increasing Si content improves magnetic and electrical properties of electrical steel, with 6.5% Si as the optimum. Unfortunately, when Si content approaches 5.7%, the Fe-Si alloy becomes brittle. At 6.5%, the steel conventional cold rolling process is no longer applicable. The heterogeneous formation of B2 and D03 ordered phases is responsible for the embrittlement. The formation of these ordered phases can be impeded by rapid cooling. However, only the cooling rates of water and brine water were investigated. A comprehensive study of the effect of rapid cooling rate on the formation of the ordered phases was carried out by varying wheel speed and melt-injection rate. Thermal imaging employed to measure cooling rates while microstructures of the obtained ribbons are characterized using X-ray diffraction and TEM. The electrical, magnetic and mechanical properties are characterized using 4-pt probe, VSM, and macro-indentation methods. The relations between physical properties and ordered phases are established.

36 MATERIALS SCIENCE↗
DOE OSTI2019

On the Efficiency $\eta$ and the Homogeneity of TiN Kinetic Inductance Detectors Produced through Atomic Layer Deposition

Microwave Kinetic Inductance Detectors (MKIDs) belong to non-equilibrium superconducting devices. It is a new promising device due to high quantum efficiency, low theoretical noise limit, multiplex frequency domain, photon-number-resolving, and energy resolving. In the case of MKIDs, a change in the kinetic inductance is produced by the breaking of Cooper pairs, modifying the electrodynamic response of the superconductor. The production process of an MKID consists of depositing a superconducting thin film on an insulating substrate and applying standard lithographic patterning techniques to produce a resonator structure. When an MKID is produced via sputtering, film nonuniformity is observed, producing instability, low yield, frequency collisions, and low energy resolution. We exploring film uniformity in films produced with Atomic Layer Deposition (ALD) and through ALD archive high values in the energy resolution. The uniformity of ALD is evaluated via measurement of the critical temperature of 4 MKIDs. Two MKIDs belong to the first fabrication process and the other two to another. The results obtained are: ΔTc/max(σT1,σT2) is 0.45 for A1-B1 and 0.21 for A2-B2. The difference in the Tc for MKIDs of the same wafer is around 5.1 mK and from different wafers, the maximum difference is 66 mk with a minimum of 48 mK. However, with the high uniformity archived, we obtained a poor response of the MKIDs when a photon is absorbed. As a consequence of the low response, we examined in the literature about the process of photon absorption. In this evaluation, we were focusing on the down-conversion efficiency as a possible cause for the degraded energy resolution. In this process, one part of the initial energy of the photon is lost, transferred to the creation of quasiparticles and phonons. The phonons that do not possess enough energy to break a Cooper pair are lost from the system. This loss in energy is accounted for by the eff iciency η which has a constant value reported as 0.57 (! from simulation). Due to the efficiency had been reported always as constant. We proceed to evaluate its value through a new method. The process consists of measuring the gain of the system via the photon transfer curve and thermal calibration. The efficiency obtained with this new method is of 0.008 which has a lower value in comparison with the simulation. The methods to obtain the critical temperature, as well as the new method to evaluate the efficiency of an MKID will be shown in this work.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Thermoelectric material

An apparatus for solid state energy harvesting includes a complex oxide based pyrochlores having a chemical formula of A2 B2 O7 configured to directly convert heat into electricity and operate and function at a higher temperature without oxidizing in air. The complex oxide based pyrochlores are mixed with cation at B-site.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2013

Chooz A, First Pressurized Water Reactor to be Dismantled in France - 13445

Nine commercial nuclear power plants have been permanently shut down in France to date, of which the Chooz A plant underwent an extensive decommissioning and dismantling program. Chooz Nuclear Power Station is located in the municipality of Chooz, Ardennes region, in the northeast part of France. Chooz B1 and B2 are 1,500 megawatt electric (MWe) pressurized water reactors (PWRs) currently in operation. Chooz A, a 305 MWe PWR implanted in two caves within a hill, began operations in 1967 and closed in 1991, and will now become the first PWR in France to be fully dismantled. EDF CIDEN (Engineering Center for Dismantling and Environment) has awarded Westinghouse a contract for the dismantling of its Chooz A reactor vessel (RV). The project began in January 2010. Westinghouse is leading the project in a consortium with Nuvia France. The project scope includes overall project management, conditioning of the reactor vessel (RV) head, RV and RV internals segmentation, reactor nozzle cutting for lifting the RV out of the pit and seal it afterwards, dismantling of the RV thermal insulation, ALARA (As Low As Reasonably Achievable) forecast to ensure acceptable doses for the personnel, complementary vacuum cleaner to catch the chips during the segmentation work, needs and facilities, waste characterization and packaging, civil work modifications, licensing documentation. The RV and RV internals will be segmented based on the mechanical cutting technology that Westinghouse applied successfully for more than 13 years. The segmentation activities cover the cutting and packaging plan, tooling design and qualification, personnel training and site implementation. Since Chooz A is located inside two caves, the project will involve waste transportation from the reactor cave through long galleries to the waste buffer area. The project will end after the entire dismantling work is completed, and the waste storage is outside the caves and ready to be shipped either to the ANDRA (French National Radioactive Waste Management Agency) waste disposal facilities - (for low-level waste [LLW] and very low-level waste [VLLW], which are considered short lived) - or to the EDF Interim Storage Facility planned to be built on another site - (for low- and intermediate-level waste [LILW], which is considered long lived). The project has started with a detailed conceptual study that determines the step-by-step approach for dismantling the reactor and eventually supplying the packed containers ready for final disposal. All technical reports must be verified and approved by EDF and the French Nuclear Safety Authority before receiving the authorization to start the site work. The detailed conceptual study has been completed to date and equipment design and manufacturing is ongoing. This paper will present the conceptual design of the reactor internals segmentation and packaging process that will be implemented at Chooz A, including the planning, methodology, equipment, waste management, and packaging strategy. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2016

A progress update on selected AREVA NP advanced BWR methodologies

This article presents an overview of select advances in AREVA NP methods concerning 3 topics: Analytical fuel rod model, Transient and accident simulation, and ATWSi post dryout treatment. Concerning the first topic, the analytical fuel rod model relies heavily on first-principles closed-form solutions instead of ever finer nodalization and higher dimensions of standard numerical methods such as finite differences or finite elements. This analytical fuel rod model takes full account of the complications that made numerical analysis necessary, e.g. variation of pellet thermal conductivity with temperature and burnup, and the radial dependence of fission power deposition in pellets. The model also calculates thermo-mechanical parameters such as clad stress and strain, fission gas release, pellet sintering and swelling, and pellet-clad gap size and thermal resistance. The model is suited for innovative fuel designs such as doped pellets. Concerning the second topic, the BWR evaluation model, AURORA-B, is an advanced transient and accident simulator including SRELAP5, a two fluid thermal hydraulic code comprehensively reviewed by international safety authorities for BWR and PWR applications; RODEX4, a best estimate fuel performance code used to evaluate the local thermal-mechanical behavior of fuel rods during postulated transients and accidents; and MB2-K, a neutron kinetics extension of the steady state core simulator MICROBURN-B2. The analytical domains will include transients as well as control rod drop and loss of coolant accidents. Extension of RODEX4 have been made to accommodate analysis of chromium-doped fuel. Concerning the third issue,The new AREVA post-dryout models can accurately predict dryout/re-wet followed by an ultimate failure to re-wet under oscillatory ATWSi (Anticipated Transient Without SCRAM with core instability) conditions. These models, while not a boiling curve based method, can qualitatively reproduce the characteristics of the boiling curve.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2023

Growth interface study of CdTeSe crystals grown by the THM technique

The Traveling Heater Method (THM) is a widely accepted technique to grow high-quality detector grade CdTe and CdZnTe ingots, especially for X-ray and gamma-ray detector applications. Unlike melt-growth techniques, the growth interface for ingots produced by the THM technique consists of two different compounds, viz. the solidified region (just below the interface) consists of the compound to be grown (e.g., CdZnTe for CdZnTe growth), while the molten zone just above the growth interface consists of Te-rich CdZnTe. Thus, optimization of the growth parameters is critical to obtain a clean growth interface with the required shape and presence of minimal Te-rich inclusions. Here, in this study, CdTeSe ingots were grown employing the THM technique to investigate the growth interface. Both macroscopic and microscopic behavior of the interface were studied. The study revealed that a microscopically smooth growth interface can be achieved by optimizing the growth parameters, which is essential for obtaining high-quality, inclusion-free ingots.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
DOE OSTI2015

Flux growth utilizing the reaction between flux and crucible

Flux growth involves dissolving the components of the target compound in an appropriate flux at high temperatures and then crystallizing under supersaturation controlled by cooling or evaporating the flux. A refractory crucible is generally used to contain the high temperature melt. Moreover, the reaction between the melt and crucible materials can modify the composition of the melt, which typically results in growth failure, or contaminates the crystals. Thus one principle in designing a flux growth is to select suitable flux and crucible materials thus to avoid any reaction between them. In this paper, we review two cases of flux growth in which the reaction between flux and Al 2 O 3 crucible tunes the oxygen content in the melt and helps the crystallization of desired compositions. For the case of La 5 Pb 3 O, the Al 2 O 3 crucible oxidizes La to form a passivating La 2 O 3 layer which not only prevents further oxidization of La in the melt but also provides [O] to the melt. Finally, in the case of La 0.4 Na 0.6 Fe 2 As 2 , it is believed that the Al 2 O 3 crucible reacts with NaAsO 2 and the reaction consumes oxygen in the melt thus maintaining an oxygen-free environment.

36 MATERIALS SCIENCE↗
DOE OSTI2015

X-ray topographic study of growth defects of trans-stilbene crystals grown from solutions

Single crystals of trans-stilbene, C 14 H 12 , with properties suitable for high-energy neutron detection were grown from solution in anisole and toluene by the temperature reduction method with growth rates up to 6 mm/day. From these crystals, slices of appropriate orientation and thickness of 2–4 mm were cut and studied by X-ray diffraction topography applying the Lang method using CuKα radiation. The topographs exhibit growth defects such as liquid inclusions, dislocations, striations, and faulty growth-sector boundaries. These defects occur in the same typical arrangements and geometries as is observed in all kinds of crystals grown on habit faces from solution. Besides growth dislocations originating from inclusions and propagating with the growth front, many plastic glide dislocations in the shape of loops or half-loops emitted from inclusions by stress relaxation are observed. Finally, the glide system underlying this plasticity is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

Synchrotron X-ray Topography is a powerful technique to study defects structures particularly dislocation configurations in single crystals. Complementing this technique with geometrical and contrast analysis can enhance the efficiency of quantitatively characterizing defects. In this study, the use of Synchrotron White Beam X-ray Topography (SWBXT) to determine the line directions of threading dislocations in 4H–SiC axial slices (sample cut parallel to the growth axis from the boule) is demonstrated. This technique is based on the fact that the projected line directions of dislocations on different reflections are different. Another technique also discussed is the determination of the absolute Burgers vectors of threading mixed dislocations (TMDs) using Synchrotron Monochromatic Beam X-ray Topography (SMBXT). This technique utilizes the fact that the contrast from TMDs varies on SMBXT images as their Burgers vectors change. By comparing observed contrast with the contrast from threading dislocations provided by Ray Tracing Simulations, the Burgers vectors can be determined. Thereafter the distribution of TMDs with different Burgers vectors across the wafer is mapped and investigated.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Hydride CVD Hetero-epitaxy of B 12 P 2 on 4H-SiC

Icosahedral boron phosphide (B 12 P 2 ) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, radiation detection, or in electronics in high radiation environments. Our study focused on improving B 12 P 2 hetero-epitaxial films by growing on 4H-SiC substrates over the temperature range of 1250–1450 °C using B 2 H 6 and PH 3 precursors in a H 2 carrier gas. Furthermore, XRD scans and Laue transmission photographs revealed that the epitaxial relationship was (0001)<11$\bar{2}$0> B 12 P 2 || (0001)<11$\bar{2}$0> 4H-SiC . The film morphology and crystallinity were investigated as a function of growth temperature and growth time. At 1250 °C, films tended to form rough, polycrystalline layers, but at 1300 and 1350 °C, films were continuous and comparatively smooth (R RMS ≤7 nm). At 1400 or 1450 °C, the films grew in islands that coalesced as the films became thicker. Using XRD rocking curves to evaluate the crystal quality, 1300 °C was the optimum growth temperature tested. Finally, at 1300 °C, the rocking curve FWHM decreased with increasing film thickness from 1494 arcsec for a 1.1 μm thick film to 954 arcsec for a 2.7 µm thick film, suggesting a reduction in defects with thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures

We present a detailed study of 7-nm thick Al layers epitaxially grown on In x Al 1-x As or Al 1-x Ga x Sb y As 1-y (0 0 1) semiconductors using high-resolution transmission electron microscopy (HRTEM) and synchrotron X-ray diffraction (XRD). These techniques provide high spatial and high reciprocal space resolution information about Al lattice orientations and interfacial structure, highlighting the existence of a strong correlation between the surface lattice parameter of the semiconductor and the normal orientation of the aluminum film. The normal orientation of Al layers is found to be [1 1 1] when the in-plane semiconductor surface lattice parameter, a S , is smaller than 5.98 Å, and is [1 1 0] when aS is larger than this value. In the transition between these lattice parameters where one orientation is preferred, both orientations may be observed. Concomitant with the change in normal orientation is an inversion in the strain state of the aluminum film. When the normal orientation is [1 1 1], the Al film is compressively strained; while for [1 1 0] normal orientations, the Al in-plane strain is tensile. An energy balance model, accounting for surface, interfacial, side-face, and strain energy, and the registry of lattice planes across the semiconductor/aluminum interface provide explanations for the observed normal orientation and strain inversion.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Computational modeling and neutron imaging to understand interface shape and solute segregation during the vertical gradient freeze growth of BaBrCl:Eu

In this work we apply continuum models to analyze phase change, heat transfer, fluid flow, solute transport, and segregation in order to understand prior neutron imaging observations of the vertical gradient freeze growth of Eu-doped BaBrCl. The models provide a rigorous framework in which to understand the mechanisms that are responsible for the complicated evolution of interface shape and dopant distribution in the growth experiment. We explain how a transition in the solid/liquid interface shape from concave to convex is driven by changes in radial heat transfer caused by furnace design. We also provide a mechanistic explanation of how dynamic growth conditions and changes of the flow structure in the melt result in complicated segregation patterns in this system. A growth pause caused by controller lock-up is shown to result in a band of solute depletion in accordance with classical theory. However, changing flow patterns during growth result in a non-monotonic axial distribution of solute that cannot be explained by simple application of classical segregation models. We assert that the approach presented here, namely the use of rigorous models in conjunction advanced diagnostics, such as neutron imaging, provides an exciting path forward for process optimization and control, accelerating the incremental advances that have, in the past, typically relied on empiricism, experience, and intuition.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates

In this paper, we experimentally investigated the role of V-defect density on the performance of green III-nitride LEDs grown on sapphire substrates by metalorganic chemical vapor deposition. We systematically varied the threading dislocation (TD) density from 4 × 10 8 to 1 × 10 9 cm -2 by changing the V/III ratio during initial high temperature GaN growth. A 30-period InGaN/GaN superlattice promoted V-defect formation and growth at TDs, where the density of V-defects was correlated to the TD density. By interrupting the LED growth and examining the surface of the active region, we quantified the average size and density of V-defects. In a series of LEDs, we measured a systematic decrease in forward voltage (V F ) with V-defect density. At a V-defect density of 5.0 × 10 8 cm -2 and TD density of 1 × 10 9 cm -2 , green LED devices were demonstrated with λ = 523 nm and V F = 2.94 V at 20 A cm -2 . These results highlight the potential of using V-defect engineering to achieve low V F long wavelength LEDs on sapphire substrates, where opening of remaining threading dislocations into V-defects presents an opportunity for further V F reduction.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures

Epitaxial GaP/Si heterostructures grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) have been studied, primarily using aberration-corrected scanning transmission electron microscopy (AC-STEM). Atomically-resolved structure images, which are sensitive to atomic-column intensity revealed the detailed geometry of antiphase boundaries that were both parallel and also inclined to the growth direction. The polar/non-polar GaP/Si interfaces were neither atomically flat laterally nor abrupt vertically. Measurements of intensity profiles using both bright-field and dark-field AC-STEM images, as well as chemically-sensitive g 002 dark-field imaging, indicated substantial interfacial intermixing, which increased significantly from ~1.3 nm (MEE growth at 440 °C) to ~2.1 nm (MBE growth at 600 °C). The finite interface width will impact theoretical predictions of charge imbalance and strong electric fields across the heterointerface.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition

The unintentional impurity incorporation in GaN epitaxial layers impacts the electrical conductivity and optical properties of the films grown by metalorganic chemical vapor deposition (MOCVD). It is critical to control impurity-related states for device structure development. The aim of this work is to contribute to the understanding of the reasons for the presence of certain background impurities. In this paper, the unintentional impurity incorporation of carbon, hydrogen, oxygen, and silicon in undoped (u-) GaN films grown by low-pressure MOCVD were studied. Background impurity concentrations were evaluated by secondary ion mass spectroscopy (SIMS) to optimize growth parameters including V/III ratio, growth temperature (T g ), growth pressure (P g ), and gallium (Ga) precursors of trimethylgallium (TMG) or triethylgallium (TEG). Unintentional [C] and [Si] incorporations are found to be highly dependent on the growth parameters. Further, for the same growth conditions, u-GaN films grown with a TEG precursor exhibited a lower background concentration of C compared to that of GaN grown with TMG. However, the lowest background [C] achieved was grown with TMG using optimized conditions and exhibited [C]<4×10 15 cm -3 which was at the detection limit of the SIMS measurement. These results were measured for a u-GaN layer grown with TMG at 200 Torr, 1030°C, and a V/III of 3700. The lowest background [Si] of 4×10 15 cm -3 was achieved by growing with TMG at 200 Torr, 1000°C, and V/III of 650.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗