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At least 973 records · Page 54

Design method for minimizing RF voltage breakdown

Research study was conducted and results were published. Using principles of similarity and minimum of experimental data, a number of universal curves have been constructed covering wide range of experimental parameters. Gases other than air, such as argon and carbon dioxide, also are included in study.

Woo, R. T.↗

High voltage and current, gate assisted, turn-off thyristor development

An improved high speed power switch with unique turn-off capability was developed. This gate assisted turn-off thyristor (GATT) was rated 1000 volts and 100 amperes with turn-off times of 2 microseconds. Fifty units were delivered for evaluation. In addition, test circuits designed to relate to the series inverter application were built and demonstrated. In the course of this work it was determined that the basic device design is adequate to meet the static characteristics and dynamic turn-off specification. It was further determined that the turn-on specification is critically dependent on the gate drive circuit due to the distributive nature of the cathode-gate geometry. Future work should emphasize design modifications which reduce the gate current required for fast turn-on, thereby opening the way to higher power (current) devices.

Nowalk, T. P.↗

Injector for use in high voltage isolators for liquid feed lines

An improved injector is described for use in introducing fluid substances into feed lines employed in delivering flowing bodies of liquids. The injector includes a porous plug, concentrically related to a feed line, including an internally tapered surface of a truncated conical configuration with an inlet orifice of a first diameter substantially smaller than the first diameter and an external surface circumscribed by an annular chamber containing a body of insulating gas.

Snyder, J. A.↗

High voltage solid-state relay

Hybrid microelectronics relay has characteristics significantly superior to conventional solid state relays. Relay provides 2500 Vdc input to output isolation and operates from high threshold logic signal to switch load of 400 Vdc at 2 mA. Technology should be of interest to manufacturers of discrete components.

Sater, B. L.↗

Regulated dc-to-dc converter for voltage step-up or step-down with input-output isolation

A closed loop regulated dc-to-dc converter employing an unregulated two winding inductive energy storage converter is provided by using a magnetically coupled multivibrator acting as duty cycle generator to drive the converter. The multivibrator is comprised of two transistor switches and a saturable transformer. The output of the converter is compared with a reference in a comparator which transmits a binary zero until the output exceeds the reference. When the output exceeds the reference, the binary output of the comparator drives transistor switches to turn the multivibrator off. The multivibrator is unbalanced so that a predetermined transistor will always turn on first when the binary feedback signal becomes zero.

Feng, S. Y.↗

High voltage electron microscopy of lunar samples

Lunar pyroxenes from Apollo 11, 12, 14, and 15 were investigated. The iron-rich and magnesium-rich pyroxene specimens were crushed to a grain size of ca. 50 microns and studied by a combination of X-ray and electron diffraction, electron microscopy, 57 Fe Mossbauer spectroscopy and X-ray crystallography techniques. Highly ordered, uniform electron-dense bands, corresponding to exsolution lamellae, with average widths of ca. 230A to 1000A dependent on the source specimen were observed. These were?qr separated by wider, less-dense interband spacings with average widths of ca. 330A to 3100A. In heating experiments, splitting of the dense bands into finer structures, leading finally to obliteration of the exsolution lamellae was recorded. The extensive exsolution is evidence for significantly slower cooling rates, or possibly annealing, at temperatures in the subsolidus range, adding evidence that annealing of rock from the surface of the moon took place at ca. 600 C. Correlation of the band structure with magnetic ordering at low temperatures and iron clustering within the bands was studied.

Fernandez-Moran, H.↗

Low voltage 30-cm ion thruster development

The basic goal was to advance the development status of the 30-cm electron bombardment ion thruster from a laboratory model to a flight-type engineering model (EM) thruster. This advancement included the more conventional aspects of mechanical design and testing for launch loads, weight reduction, fabrication process development, reliability and quality assurance, and interface definition, as well as a relatively significant improvement in thruster total efficiency. The achievement of this goal was demonstrated by the successful completion of a series of performance and structural integrity (vibration) tests. In the course of the program, essentially every part and feature of the original 30-cm Thruster was critically evaluated. These evaluations, led to new or improved designs for the ion optical system, discharge chamber, cathode isolator vaporizer assembly, main isolator vaporizer assembly, neutralizer assembly, packaging for thermal control, electrical terminations and structure.

King, H. J.↗

Inexpensive low-voltage solid-state alarm

Monitor/alarm with audio and visual warning output can be used to warn when prescribed limits of temperature, liquid level, pressure, or similar properties are exceeded. Device is more compact, lighter, and less expensive to manufacture than typical alarm circuits.

Hardy, D. H.↗

Study of SEM induced current and voltage contrast modes to assess semiconductor reliability

The purpose of the scanning electron microscopy study was to review the failure history of existing integrated circuit technologies to identify predominant failure mechanisms, and to evaluate the feasibility of their detection using SEM application techniques. The study investigated the effects of E-beam irradiation damage and contamination deposition rates; developed the necessary methods for applying the techniques to the detection of latent defects and weaknesses in integrated circuits; and made recommendations for applying the techniques.

Beall, J. R.↗

A theoretical analysis of the current-voltage characteristics of solar cells

Various mechanisms which limit the conversion efficiency of silicon solar cells were studied. The effects of changes in solar cell geometry such as layer thickness on performance were examined. The effects of various antireflecting layers were also examined. It was found that any single film antireflecting layer results in a significant surface loss of photons. The use of surface texturing techniques or low loss antireflecting layers can enhance by several percentage points the conversion efficiency of silicon cells. The basic differences between n(+)-p-p(+) and p(+)-n-n(+) cells are treated. A significant part of the study was devoted to the importance of surface region lifetime and heavy doping effects on efficiency. Heavy doping bandgap reduction effects are enhanced by low surface layer lifetimes, and conversely, the reduction in solar cell efficiency due to low surface layer lifetime is further enhanced by heavy doping effects. A series of computer studies is reported which seeks to determine the best cell structure and doping levels for maximum efficiency.

Dunbar, P. M.↗

Battery peak-charge voltage monitor

Monitor was designed for use on dual air density satellite, utilizing standard integrated circuit components, thin-film resistors network, plus several passive components. Device measures unit charge and holds data for transmission at later time.

Shull, T. A.↗

Correlation of photocurrent-voltage curves with flat-band potential for stable photoelectrodes for the photoelectrolysis of water

Using the differential capacitance technique, the flat-band potential of n-type TiO2, SnO2, SrTiO3, KTaO3, and KTa(0.77)Nb(0.23)O3 electrodes has been determined as a function of pH in aqueous electrolytes. Plots of flat-band potential vs. pH are linear in all cases and have a slope of approximately 0.059 V/pH unit. The flat-band potential correlates nicely with the onset for photoanodic currents corresponding to O2 evolution at the n-type semiconductor and H2 at the dark Pt cathode. The ordering of flat-band potentials at a given pH is SrTiO3 of the order of KTaO3 of the order of KTa(0.77)Nb(0.23)O3 greater than TiO2 greater than SnO2 (SnO2 most positive vs a saturated calomel electrode).

Bolts, J. M.↗

Ultrasonic evaluation of high-voltage circuit boards

Ultrasonic transmission technique, using reflector plate, indicates resistance to corona formation. Technique is useful as tool for mapping specific panels to permit selecting best areas of laminate for circuit board use. Procedure is relatively safe, fast, inexpensive, and uses commercially-available equipment.

Klima, S. J.↗

Power loss for high-voltage solar-cell arrays

Electric field particle collection and power loss are calculated in program written in FORTRAN IV for use on UNIVAC 1100/40 computer. Program incorporates positive and negative and negative charge flows and balance between positive and negative flows is performed by iteration.

Parker, L. W.↗

High voltage, high current Schottky barrier solar cell

A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.

Stirn, R. J.↗