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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

Here, we demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO 2 . Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm 2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10 3 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%.

14 SOLAR ENERGY↗
DOE OSTI2019

Electronic shell structures, self-trapped excitons, and defect-bound excitons in Li 2 B 12 H 12

First-principles studies of electronic structures, excitons, and defects in Li 2 B 12 H 12 reveal unique photophysical properties of Li 2 B 12 H 12 and its potential as a neutron scintillator material. We identify the electronic shell structure in (B 12 H 12 ) 2- , which gives rise to strong chemical stability of (B 12 H 12 ) 2- and a large band gap of Li 2 B 12 H 12 . Based on hybrid functional calculations, we show that excitons in Li 2 B 12 H 12 are strongly self-trapped and predict that the exciton excitation and emission are both in the UV range and are not related to the bright blue emission observed in the experiment. The experimentally observed blue emission in Li 2 B 12 H 12 is likely due to the emission of excitons bound to hydrogen vacancies. The calculated strong localization and large exciton trapping energy at hydrogen vacancies indicate enhanced radiative recombination, while the calculated large Stokes shift suggests that the self-absorption and the resonance transfer of the excitation energy may be suppressed. These properties should promote efficient defect emission at room temperature. The efficient defect emission, combined with the large thermal neutron capture cross-section by Li and B and the efficient energy transfer between fast neutrons and H, suggests potential applications of Li 2 B 12 H 12 as a thermal or fast neutron scintillator. Optical characterization of VH may also be used to monitor H and Li concentrations in Li 2 B 12 H 12 -based hydrogen storage materials and solid-state electrolytes in Li batteries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Surface chemical trapping of optical cycling centers

Quantum information processors based on trapped atoms utilize laser-induced optical cycling transitions for state preparation and measurement. These transitions consist of an electronic excitation from the ground to an excited state and a decay back to the initial ground state, associated with a photon emission. While this technique has been used primarily with atoms, it has also recently been shown to work for some divalent metal hydroxides ( e.g. SrOH) and alkoxides ( e.g. SrOCH 3 ). Additionally, this extension to molecules is possible because these molecules feature nearly isolated, atomic-like ground and first-excited electronic states centered on the radical metal atom. We theoretically investigate the extension of this idea to a larger scale by growing the alkyl group, R, beyond the initial methyl group, CH 3 , while preserving the isolated and highly vertical character of the electronic excitation on the radical metal atom, M. Theory suggests that in the limit as the size of the ligand carbon chain increases, it can be considered a functionalized diamond (or cubic boron nitride) surface. Several requirements must be observed for the cycling centers to function when bound to the surface. First, the surface must have a significant band gap that fully encapsulates both the ground and excited states of the cycling center. Second, while the surface lattice imposes strict limits on the achievable spacing between the SrO– groups, at high coverage, SrO– centers can interact, and show geometric changes and/or electronic state mixing. We show that the coverage of the diamond surface with SrO– cycling centers needs to be significantly sub-monolayer for the functionality of the cycling center to be preserved. Having the lattice-imposed spatial control of SrO– placements will allow nanometer-scale proximity between qubits and will eliminate the need for atom traps for localized cycling emitters. Our results also imply that a functionalization could be done on a scanning microscope tip for local quantum sensing or on photonic structures for optically-mediated quantum information processing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Alkyl decorated metal–organic frameworks for selective trapping of ethane from ethylene above ambient pressures

Here the trapping of paraffins is beneficial compared to selective olefin adsorption for adsorptive olefin purification from a process engineering point of view. Here we demonstrate the use of a series of Zn 2 (X-bdc) 2 (dabco) (where X-bdc 2- is bdc 2- = 1,4-benzenedicarboxylate with substituting groups X, DM-bdc 2- = 2,5-dimethyl-1,4-benzenedicarboxylate or TM-bdc 2- = 2,3,5,6-tetramethyl-1,4-benzenedicarboxylate and dabco = diazabicyclo[2.2.2.]octane) metal-organic frameworks (MOFs) for the adsorptive removal of ethane from ethylene streams. The best performing material from this series is Zn2(TM-bdc)2(dabco) (DMOF-TM), which shows a high ethane uptake of 5.31 mmol g -1 at 110 kPa, with a good IAST selectivity of 1.88 towards ethane over ethylene. Through breakthrough measurements a high productivity of 13.1 L/kg per breakthrough is revealed with good reproducibility over five consecutive cycles. Molecular simulations show that the methyl groups of DMOF-TM are forming a van der Waals trap with the methylene groups from dabco, snuggly fitting the ethane. Further, rarely used high pressure coadsorption measurements, in pressure regimes that most scientific studies on hydrocarbon separation on MOFs ignore, reveal an increase in ethane capacity and selectivity for binary mixtures with increased pressures. The coadsorption measurements reveal good selectivity of 1.96 at 1000 kPa, which is verified also through IAST calculations up to 3000 kPa. This study overall showcases the opportunities that pore engineering by alkyl group incorporation and pressure increase offer to improve hydrocarbon separation in reticular materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

A thermal evaporation–trapping strategy to synthesize flexible and robust oxygen electrocatalysts for rechargeable zinc–air batteries

Great efforts have been devoted to the development of bifunctional electrocatalysts to accelerate the sluggish kinetics of cathodic oxygen reduction/evolution reactions (ORR/OER) in zinc–air batteries (ZABs). Here we report a thermal evaporation–trapping synergistic strategy to fabricate a bifunctional electrocatalyst of flexible N-doped carbon fiber cloth loaded with both CoFe-oxide nanoparticles and single-atom Co/Fe–Nx sites, in which the thermal evaporation process functions in both downsizing CoFe-oxide nanoparticles and trapping the evaporated Co/Fe species to generate Co/Fe–Nx sites. The obtained flexible electrocatalyst, directly serving as an oxygen electrode, displays a small potential gap of 0.542 V for the OER/ORR, large peak power densities (liquid-state ZAB: 237.4 mW cm2 ; solid-state ZAB: 141.1 mW cm2 ), and excellent charge–discharge cycling stability without decay after working more than 770 hours. Furthermore, in situ Raman spectroscopy characterization and theoretical calculations reveal that CoFe2O4 species is responsible for the OER while atomic Fe/Co sites play a key role in the ORR

Zhang, Hong-Bo↗
DOE OSTI2014

Enhancing DNA binding rate using optical trapping of high-density gold nanodisks

We present the dynamic study of optical trapping of fluorescent molecules using high-density gold nanodisk arrays. The gold nanodisks were fabricated by electron beam lithography with a diameter of 500 nm and a period of 1 μm. Dark-field illumination showed ∼15 times enhancement of fluorescence near edges of nanodisks. Such enhanced near-field generated an optical trapping force of ∼10 fN under 3.58 × 10{sup 3} W/m{sup 2} illumination intensity as calculated from the Brownian motions of 590 nm polystyrene beads. Kinetic observation of thiolated DNA modified with Cy5 dye showed different binding rates of DNA under different illumination intensity. The binding rate increased from 2.14 × 10{sup 3} s{sup −1} (I = 0.7 × 10{sup 3} W/m{sup 2}) to 1.15 × 10{sup 5} s{sup −1} (I = 3.58 × 10{sup 3} W/m{sup 2}). Both enhanced fluorescence and binding rate indicate that gold nanodisks efficiently improve both detection limit and interaction time for microarrays.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm{sup 2}/Vs is observed at ∼1.4 × 10{sup 12} cm{sup −2}. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 × 10{sup 11} cm{sup −2}. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Spatial shaping for generating arbitrary optical dipole traps for ultracold degenerate gases

We present two spatial-shaping approaches – phase and amplitude – for creating two-dimensional optical dipole potentials for ultracold neutral atoms. When combined with an attractive or repulsive Gaussian sheet formed by an astigmatically focused beam, atoms are trapped in three dimensions resulting in planar confinement with an arbitrary network of potentials – a free-space atom chip. The first approach utilizes an adaptation of the generalized phase-contrast technique to convert a phase structure embedded in a beam after traversing a phase mask, to an identical intensity profile in the image plane. Phase masks, and a requisite phase-contrast filter, can be chemically etched into optical material (e.g., fused silica) or implemented with spatial light modulators; etching provides the highest quality while spatial light modulators enable prototyping and realtime structure modification. This approach was demonstrated on an ensemble of thermal atoms. Amplitude shaping is possible when the potential structure is made as an opaque mask in the path of a dipole trap beam, followed by imaging the shadow onto the plane of the atoms. While much more lossy, this very simple and inexpensive approach can produce dipole potentials suitable for containing degenerate gases. High-quality amplitude masks can be produced with standard photolithography techniques. Amplitude shaping was demonstrated on a Bose-Einstein condensate.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Passivation of GaSb using molecular beam epitaxy Y{sub 2}O{sub 3} to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Molecular beam epitaxy deposited rare-earth oxide of Y{sub 2}O{sub 3} has effectively passivated GaSb, leading to low interfacial trap densities of (1–4) × 10{sup 12 }cm{sup −2} eV{sup −1} across the energy bandgap of GaSb. A high saturation drain current density of 130 μA/μm, a peak transconductance of 90 μS/μm, a low subthreshold slope of 147 mV/decade, and a peak field-effect hole mobility of 200 cm{sup 2}/V-s were obtained in 1 μm-gate-length self-aligned inversion-channel GaSb p-Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). In this work, high-κ/GaSb interfacial properties were better in samples with a high substrate temperature of 200 °C than in those with high κ's deposited at room temperature, in terms of the interfacial electrical properties, particularly, the reduction of interfacial trap densities near the conduction band and the MOSFET device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

A series of B implantation experiments into initially amorphized and not fully recrystallized Si, i.e., into an existing a/c-Si bi-layer material, have been conducted. We varied B dose, energy, and temperature during implantation process itself. Significant B migration has been observed within c-Si part near the a/c-interface and near the end-of-range region before any activation annealing. We propose a general concept of local trapping sites as experimental probes of nanoscale reaction-diffusion processes. Here, the a/c-Si interface acts as a trap, and the process itself is explored as the migration and clustering of mobile BI point defects in nearby c-Si during implantation at temperatures from 77 to 573 K. We find that at room temperature—even at B concentrations as high as 1.6 atomic %, the key B-B pairing step requires diffusion lengths of several nm owing to a small, ∼0.1 eV, pairing energy barrier. Thus, in nanostructures doped by ion implantation, the implant distribution can be strongly influenced by thermal migration to nearby impurities, defects, and interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

We report the interface characterization of Al{sub 2}O{sub 3}/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al{sub 2}O{sub 3}/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D{sub it} in MOS structures, D{sub it} in the device with AlN was determined to be in the range of 10{sup 11}–10{sup 12 }eV{sup −1 }cm{sup −2}, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Plasmonic light trapping in an ultrathin photovoltaic layer with film-coupled metamaterial structures

A film-coupled metamaterial structure is numerically investigated for enhancing the light absorption in an ultrathin photovoltaic layer of crystalline gallium arsenide (GaAs). The top subwavelength concave grating and the bottom metallic film could not only effectively trap light with the help of wave interference and magnetic resonance effects excited above the bandgap, but also practically serve as electrical contacts for photon-generated charge collection. The energy absorbed by the active layer is greatly enhanced with the help of the film-coupled metamaterial structure, resulting in significant improvement on the short-circuit current density by three times over a free-standing GaAs layer at the same thickness. The performance of the proposed light trapping structure is demonstrated to be little affected by the grating ridge width considering the geometric tolerance during fabrication. The optical absorption at oblique incidences also shows direction-insensitive behavior, which is highly desired for efficiently converting off-normal sunlight to electricity. The results would facilitate the development of next-generation ultrathin solar cells with lower cost and higher efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2016

A cryogenically cooled, ultra-high-energy-resolution, trap-based positron beam

A technique is described to produce a pulsed, magnetically guided positron beam with significantly improved beam characteristics over those available previously. A pulsed, room-temperature positron beam from a buffer gas trap is used as input to a trap that captures the positrons, compresses them both radially and axially, and cools them to 50 K on a cryogenic CO buffer gas before ejecting them as a pulsed beam. The total energy spread of the beam formed using this technique is 6.9 ± 0.7 meV FWHM, which is a factor of ∼5 better than the previous state-of-the-art, while simultaneously having sub-microsecond temporal resolution and millimeter spatial resolution. Possible further improvements in beam quality are discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Imaging crystal spectrometer for high-resolution x-ray measurements on electron beam ion traps and tokamaks

Here, we describe a crystal spectrometer implemented on the Livermore electron beam ion traps that employ two spherically bent quartz crystals and a cryogenically cooled back-illuminated charge-coupled device detector to measure x rays with a nominal resolving power of λ/Δλ ≥ 10 000. Its focusing properties allow us to record x rays either with the plane of dispersion perpendicular or parallel to the electron beam and, thus, to preferentially select one of the two linear x-ray polarization components. Moreover, by choice of dispersion plane and focussing conditions, we use the instrument either to image the distribution of the ions within the 2 cm long trap region, or to concentrate x rays of a given energy to a point on the detector, which optimizes the signal-to-noise ratio. We demonstrate the operation and utility of the new instrument by presenting spectra of Mo 34+ , which prepares the instrument for use as a core impurity diagnostic on the NSTX-U spherical torus and other magnetic fusion devices that employ molybdenum as plasma facing components.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Radial confinement of deeply trapped particles in a non-symmetric magnetohydrodynamic equilibrium

Quasisymmetry and omnigeneity of an equilibrium magnetic field are two distinct properties proposed to ensure radial localization of collisionless trapped particles in any stellarator. These constraints are incompletely explored, but have stringent restrictions on a magnetic geometry. This work employs an analytical approach to understand the implications of the constraints. The particles move in an intrinsically three dimensional equilibrium whose representation is given by the earlier work of Weitzner and its extension here. For deeply trapped particles, a local equilibrium expansion around a minimum of the magnetic field strength along a magnetic line suffices. This analytical non-symmetric equilibrium solution enables explicit representation of the constraints. The results show that it is far easier to satisfy the omnigeneity condition than the quasisymmetry requirement. Correspondingly, there exists a large class of equilibrium close to quasisymmetry that remains omnigeneous while allowing inclusion of error fields, which may destroy quasisymmetry.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Frequency Dependence of Trapped Flux Sensitivity in SRF Cavities

In this letter, we present the frequency dependence of the vortex surface resistance of bulk niobium accelerating cavities as a function of different state-of-the-art surface treatments. Higher flux surface resistance per amount of trapped magnetic field—sensitivity—is observed for higher frequencies, in agreement with our theoretical model. Higher sensitivity is observed for N-doped cavities, which possess an intermediate value of the electron mean-free-path, compared to 120 °C and EP/BCP cavities. Experimental results from our study showed that the sensitivity has a non-monotonic trend as a function of the mean-free-path, including frequencies other than 1.3 GHz, and that the vortex response to the rf field can be tuned from the pinning regime to flux-flow regime by manipulating the frequency and/or the mean-free-path of the resonator, as reported in our previous studies. The frequency dependence of the trapped flux sensitivity to the amplitude of the accelerating gradient is also highlighted.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

First principles simulation of ultracold ion crystals in a Penning trap with Doppler cooling and a rotating wall potential

A direct numerical simulation of many interacting ions in a Penning trap with a rotating wall is presented. The ion dynamics is modeled classically. Both axial and planar Doppler laser cooling processes are modeled using stochastic momentum impulses based on two-level atomic scattering rates. The plasmas being modeled are ultracold two-dimensional crystals made up of hundreds of ions. We compare Doppler cooled results directly to a previous linear eigenmodes analysis. Agreement in both frequency and mode structure is obtained. Additionally, when Doppler laser cooling is applied, the laser cooled steady state plasma axial temperature agrees with the Doppler cooling limit. Numerical simulations using the approach described and benchmarked here will provide insights into the dynamics of large trapped-ion crystals, improving their performance as a platform for quantum simulation and sensing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗