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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr{sub 3} diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

This paper reports on the influence of temperature on the structure, composition, and electrical properties of TiO2 thin films deposited on n-type silicon (100) by atomic layer deposition (ALD). TiO2 layers around 20nm thick, deposited at temperatures ranging from 100 to 300 C, were studied. Samples deposited at 250 C and 200 C had the most uniform coverage as determined by atomic force microscopy. The average carbon concentration throughout the oxide layer and at the TiO2/Si interface was lowest at 200 C. Metal oxide semiconductor capacitors (MOSCAPs) were fabricated, and profiled by capacitance-voltage techniques. Negligible hysteresis was observed from a capacitance-voltage plot and the capacitance in the accumulation region was constant for the sample prepared at a 200 C ALD growth temperature. The interface trap density was on the order of 1013 eV-1cm-2 regardless of the deposition temperature.

ALD↗
DOE OSTI2022

Oxide‐Based Solid‐State Batteries: A Perspective on Composite Cathode Architecture

Abstract The garnet‐type phase Li 7 La 3 Zr 2 O 12 (LLZO) attracts significant attention as an oxide solid electrolyte to enable safe and robust solid‐state batteries (SSBs) with potentially high energy density. However, while significant progress has been made in demonstrating compatibility with Li metal, integrating LLZO into composite cathodes remains a challenge. The current perspective focuses on the critical issues that need to be addressed to achieve the ultimate goal of an all‐solid‐state LLZO‐based battery that delivers safety, durability, and pack‐level performance characteristics that are unobtainable with state‐of‐the‐art Li‐ion batteries. This perspective complements existing reviews of solid/solid interfaces with more emphasis on understanding numerous homo‐ and heteroionic interfaces in a pure oxide‐based SSB and the various phenomena that accompany the evolution of the chemical, electrochemical, structural, morphological, and mechanical properties of those interfaces during processing and operation. Finally, the insights gained from a comprehensive literature survey of LLZO–cathode interfaces are used to guide efforts for the development of LLZO‐based SSBs.

25 ENERGY STORAGE↗
DOE OSTI2018

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Lastly, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Mechanisms of adhesion degradation at the photovoltiac module's cell metallization-encapsulant interface

Adhesion measurements and chemical characterization of the encapsulant/silver metallization interface of a photovoltaic (PV) module through temperature, humidity, and voltage bias exposures were conducted. Results demonstrate two independent degradation mechanisms: (a) with voltage bias, the ionic conduction of Na + ions through the encapsulant results in the formation of sodium silicate at the silver metallization surface, thereby weakening that interface and (b) with moisture ingress, dissociation of the silane bonding to silver in the silver oxide similarly weakens this interface resulting in significantly lower debond energies.

14 SOLAR ENERGY↗
DOE OSTI2016

Photocurrent Generation by Photosynthetic Purple Bacterial Reaction Centers Interfaced with a Porous Antimony-Doped Tin Oxide (ATO) Electrode

The ability to exchange energy and information between biological and electronic materials is critical in the development of hybrid electronic systems in biomedicine, environmental sensing, and energy applications. While sensor technology has been extensively developed to collect detailed molecular information, less work has been done on systems that can specifically modulate the chemistry of the environment with temporal and spatial control. The bacterial photosynthetic reaction center represents an ideal photonic component of such a system in that it is capable of modifying local chemistry via light-driven redox reactions with quantitative control over reaction rates and has inherent spectroscopic probes for monitoring function. Here we present a well-characterized model system, consisting of a transparent, porous electrode (antimony-doped tin oxide) which is electrochemically coupled to the reaction center via a cytochrome c molecule. Upon illumination, the reaction center performs the 2-step, 2-electron reduction of a ubiquinone derivative which exchanges with oxidized quinone in solution. Electrons from the electrode then move through the cytochrome to reoxidize the reaction center electron donor. The result is a facile platform for performing redox chemistry that can be optically and electronically controlled in time and space.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Oxidation behaviour of ferritic stainless steel grade Crofer 22 APU at 700 °C in flowing Ar−75%CO{sub 2}−12%H{sub 2}O

The oxidation of Ferritic Stainless Steel (FSS) grade Crofer 22 APU has been investigated. FSS alloys were exposed to isothermal conditions in a horizontal tube furnace at a 700 °C in flowing Ar−75%CO{sub 2}−12%H{sub 2}O at a pressure of approximately 1 atm. The results showed that the growth of non protective Fe{sub 2}O{sub 3} and spinel was observed after 50 h exposure in the presence of 12% H{sub 2}O. The weight was increased significantly with time of exposure. The formation of different oxides is presented on the interface of the specimen such as MnCr{sub 2}O{sub 4}, Fe{sub 3}O{sub 4} and Fe{sub 2}O{sub 3} were revealed by X-ray diffraction and supported by EDAX analysis. FSS did not form a protective Cr{sub 2}O{sub 3} layer due to water vapour accelerates the kinetics oxidation. Data of microstructure observation is presented and discussed in this paper in term of water vapour effects.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Anti-phase boundaries at the SrTiO{sub 3}/Si(001) interface studied using aberration-corrected scanning transmission electron microscopy

In this work, the atomic structure of anti-phase boundary defects at the SrTiO{sub 3}/Si (001) interface is investigated by aberration-corrected scanning transmission electron microscopy. Atomic-resolution images reveal an abrupt SrTiO{sub 3}/Si interface with no intermediate oxide layer. Both single and double Si atomic columns (“dumbbells”) from different terraces of the Si(001) surface are visible at the interface. Anti-phase boundaries (APB) consisting of two adjacent TiO{sub 2} planes in the SrTiO{sub 3} (STO) film resulting either from Si surface steps or from the merging of crystalline domains from different surface nucleation sites are identified. These APBs occur on either {110} or {010} planes and both types have displacement vectors of a{sub STO}/2〈110〉.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Effect of the Deposition of Vanadium-Oxide on the Photocatalytic Activity of TiO2 Nanotubes and Its Photodiode Performance Interfaced with CH3NH3PbI3 Single Crystal

In this study, we report the influence of vanadium oxide (VO), as a photosensitive component, on the photoactivity of TiO2 nanotubes (TNTs). A series of TNTs of varying tube diameter were synthesized by the anodization of titanium foils at different voltages, while vanadium oxide was deposited on TNTs by wet chemical deposition. An improvement in the optical properties of nanotubes was observed after the deposition of vanadium oxide. An improvement in the optical properties (redshift in UV-Vis spectra) of TNTs and TNT/VO was noted. The photocatalytic activity was improved with increasing tube diameter, while it was weakened after the deposition of VO. Furthermore, photoactivity was investigated in photodiodes based on TNTs or TNT/VO and single crystals of CH3NH3PbI3. The photoelectric measurement revealed that different TNT diameters did not influence the I-V characteristic of the photodiodes, while the deposition of VO improved the photocurrent for smaller TNTs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Using interfaces to: create strongly-coupled magnetic-ferroelectrics

Starting at the level of electrons and atoms our long-term goal is to rationally design complex oxide heterostructures and interface-materials with targeted emergent behaviors. This is not a matter of simply optimizing material parameters, but rather begins with understanding a mechanism to control the interplay between the diverse microscopic degrees of freedom prevalent in complex oxides in order to create targeted macroscopic phenomena and ends with the design of new material realizations. These realizations are in turn created with atomic-layer precision, structurally assessed to see that they are the intended realization, and finally their relevant properties are measured. During this program we have developed the scientific ideas necessary to apply this materials-by-design paradigm to the creation of materials offering electrical control of magnetism. At the heart of our approach lies a partnership between theory, synthesis, and characterization. These are the areas of expertise of the three co-PIs, who have worked closely together since their arrival at Cornell. During this project bold ideas on where to put the atoms to provide electrical control of magnetism were met with the latest methods of synthesis science and electron microscopy in an attempt create targeted new multiferroics. Our work applying this materials-by-design methodology to multiferroics has enjoyed multiple successes. The Co-PIs have invented new mechanisms for multiferroics, which provide strong coupling between polarization and magnetism, and reduced them to practice. Specifically, we pioneered multiferroics based on spin-phonon coupling, rotation-driven multiferroicity, and novel geometric multiferroics. Importantly, the latter two of these mechanisms enable the deterministic switching of magnetism by an applied electric field, which is key to the application of multiferroics to future device technologies. Most recently, we performed detailed theoretical analysis on a system involving the combination of magnetoelectric and colossal magnetoresistance behaviors and predict that electrical control of a metal-insulator transition is possible in appropriately strained SmBaMn2O6. The research enabled by this grant led to 63 publications in leading refereed journals including Nature, Nature Materials, Physical Review Letters, and Advanced Materials demonstrating a materials-by-design paradigm to the creation of materials offering electrical control of magnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A multimodal approach to revisiting oxidation defects in Cr 2 O 3

The oxidation of chromium in air at 700 °C was investigated with a focus on point defect behavior and transport during oxide layer growth. A comprehensive set of characterization techniques targeted characteristics of chromium oxide microstructure and chemical composition analysis. TEM showed that the oxide was thicker with longer oxidation times and that, for the thicker oxides, voids formed at the metal/oxide interface. PAS revealed that the longer the oxidation time, there was an overall reduction in vacancy-type defects, though chromium monovacancies were not found in either case. EIS found that the longer oxidized material was more electrochemically stable and that, while all oxides displayed p-type character, the thicker oxide had an overall lower charge carrier density. Together, the results suggest anion oxygen interstitials and chromium vacancy cluster complexes drive transport in an oxidizing environment at this temperature, providing invaluable insight into the mechanisms that regulate corrosion.

36 MATERIALS SCIENCE↗
NASA NTRS1992

Oxidation of Al2O3 continuous fiber-reinforced/NiAl composites

The 1200 C and 1300 C isothermal and cyclic oxidation behavior of Al2O3 continuous fiber-reinforced/NiAl composites were studied. Oxidation resulted in formation of Al2O3 external scales in a similar manner as scales formed on monolithic NiAl. The isothermal oxidation of an Al2O3/NiAl composite resulted in oxidation of the matrix along the fiber/matrix interface near the fiber ends. This oxide acted as a wedge between the fiber and the matrix, and, under cyclic oxidation conditions, led to further oxidation along the fiber lengths and eventual cracking of the composite. The oxidation behavior of composites in which the Al2O3 fibers were sputter coated with nickel prior to processing was much more severe. This was attributed to open channels around the fibers which formed during processing, most likely as a result of the diffusion of the nickel coating into the matrix.

Doychak, J.↗
DOE OSTI2024

Enhanced Ferromagnetism in Atomically Thin Oxides Achieved by Interfacial Reconstruction

Discoveries of ferromagnetic materials with ultrathin thickness are of great importance for both fundamental science and technological applications. Transition metal oxides (TMOs) provide promising candidates in the context of next‐generation spintronics, despite the severe decay of ferromagnetism as the thickness reduces to the nanometer regime. Here, in this work, an efficient strategy to eliminate the magnetic dead layer in atomically thin oxides is presented, by using the epitaxial interface of 3 d and 5 d oxide monolayers that reconciles both strong exchange interaction and large uniaxial magnetic anisotropy. Combining multiple experimental methods, a ferromagnetic transition in an ultrathin oxide heterostructure comprised of only one La 0.2 Sr 0.8 MnO 3 monolayer sandwiched by SrIrO 3 monolayer (total thickness of three unit‐cells) is unambiguously demonstrated. Remarkably, a largely enhanced saturation magnetization (2 µ B Mn −1 ) and Curie temperature (80 K) are observed for the single manganite monolayer, as compared to previously reported ferromagnetic monolayer oxides. The results demonstrate a general strategy for creating robust ferromagnetism in ultrathin TMOs, potentially enabling novel oxide spin‐orbitronic devices.

2D ferromagnetism↗