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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Facile synthesis of MoS{sub 2} and Mo{sub x}W{sub 1-x}S{sub 2} triangular monolayers

Single- and few-layered transition metal dichalcogenides, such as MoS{sub 2} and WS{sub 2}, are emerging two-dimensional materials exhibiting numerous and unusual physico-chemical properties that could be advantageous in the fabrication of unprecedented optoelectronic devices. Here we report a novel and alternative route to synthesize triangular monocrystals of MoS{sub 2} and Mo{sub x}W{sub 1-x}S{sub 2} by annealing MoS{sub 2} and MoS{sub 2}/WO{sub 3} precursors, respectively, in the presence of sulfur vapor. In particular, the Mo{sub x}W{sub 1-x}S{sub 2} triangular monolayers show gradual concentration profiles of W and Mo whereby Mo concentrates in the islands’ center and W is more abundant on the outskirts of the triangular monocrystals. These observations were confirmed by atomic force microscopy, and high-resolution transmission electron microscopy, as well as Raman and photoluminescence spectroscopy. The presence of tunable PL signals depending on the Mo{sub x}W{sub 1-x}S{sub 2} stoichiometries in 2D monocrystals opens up a wide range of applications in electronics and optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Fabrication of CuAl{sub 1−x}M{sub x}O{sub 2} (M = Fe, Cr)/Ni film delafossite compounds using spin coating and their microstructure and dielectric constant

The discovery of delafossite compound has encouraged more rapid technological developments particularly in transparent electronic devices. Copper oxide-based transparent thin films delafossite semiconductor recently give much attention in the field of optoelectronic technology, after the discovery of p-type CuAlO{sub 2}. The potential applications of a p-type semiconductor transparent conductive oxides (TCO) have been applied in broad field of optoelectronics. To explore a broad physical properties interms of magnetic conducting subtitution is understudied. In this work we report the fabrication of delafossite film on Ni substrate and their characterization of CuAl{sub 1−x}M{sub x}O{sub 2} delafossite compounds doped with Cr{sup 3+} and Fe{sup 3+} from the raw material of Cu(NO{sub 3}){sub 2}@@‡3H{sub 2}O, Al(NO{sub 3}){sub 3}@@‡9H{sub 2}O, Fe(NO{sub 3}){sub 3}@@‡9H{sub 2}O and Cr(NO{sub 3}){sub 3}@@‡9H{sub 2}O. The films were prepared using spin coating through a sol-gel technique at various concentrations of x = 0, 0.03, 0.04, and 0.05 for chromium and x = 0, 0.02, 0.04, 0.06, and 0.08 for iron doped. Crystal and microstructure were characterized by means of Cu-Kα Bragg-Brentano X-RD followed by High Score Plus and SEM-EDAX. The dielectric constants of the films were characterized using LCR meter. It was found that the CuAl{sub 1−x}M{sub x}O{sub 2}/Ni delafossite films were successfully fabricated. The CuAl{sub 1−x}Fe{sub x}O{sub 2} compound crystallized with lattice parameters of a = b ranged from 2.8603 Å to 2.8675 Å and c ranged from 16.9576 to 17.0763 Å. The increase of the dopant give rise to the increase of the lattice parameters. Since iron has bigger ionic radius (69 pm) than original site of Al{sup 3+} with radius of 53 pm the crystal volume lattice also increase. Further analyses of increasing volume of the crystal, as expected, affected to the decreasing of its dielectric constant. The similar trends also shown by Cr{sup 3+} doped of CuAl{sub 1−x}Cr{sub x}O{sub 2} films with smaller effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ordered horizontal Sb 2 Te 3 nanowires induced by femtosecond lasers

Nanowires are of intense interest on account of their ability to confine electronic and phononic excitations in narrow channels, leading to unique vibronic and optoelectronic properties. Most systems reported to date exhibit nanowire axes perpendicular to the substrate surface, while for many applications (e.g., photodetectors and sensors), a parallel orientation may be advantageous. Here in this paper, we report the formation of in-plane Sb 2 Te 3 nanowires using femtosecond laser irradiation. High-resolution scanning transmission electron microscopy imaging and element mapping reveal that an interesting laser-driven anion exchange mechanism is responsible for the nanowire formation. This development points the way to the scalable production of a distinct class of nanowire materials with in-plane geometry.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High-quality II-VI films grown on amorphous substrates using tunable tetradymite templates

We demonstrate the growth of highly oriented CdSe and ZnTe films at ~300 °C on amorphous substrates such as glass and flexible polyimide using ultrathin tetradymite buffer layers composed of Sb x Bi 2-x Te 3 alloys lattice-matched to the film overgrowth. This leads to significant improvement of the crystallinity, roughness, grain size, and pit density of the II-VI overlayer along with enhancement of the optoelectronic properties. For example, photoluminescence emission is observed at ~1.74 eV for optimized CdSe films, the same as in a single crystal reference. An in-plane carrier diffusion length of ~500 nm is inferred from transient optical data. The use of tetradymite buffer layers to control II-VI compound deposition on non-crystalline substrates is a promising route for large area optoelectronic applications such as photovoltaic, light-emission, or infrared detector devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Time-resolved terahertz dynamics in thin films of the topological insulator Bi 2 Se 3

We use optical pump–THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi 2 Se 3 films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films the photoexcitation changes the transport scattering rate and reduces the THz conductivity, which relaxes within 10 picoseconds (ps). For thicker films, the conductivity increases upon photoexcitation and scales with increasing both the film thickness and the optical fluence, with a decay time of approximately 5 ps as well as a much higher scattering rate. Furthermore, these different dynamics are attributed to the surface and bulk electrons, respectively, and demonstrate that long-lived mobile surface photo-carriers can be accessed independently below certain film thicknesses for possible optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Hidden local symmetry of Eu{sup 3+} in xenotime-like crystals revealed by high magnetic fields

The excellent optical properties of europium-doped crystals in visible and near infrared wavelength regions enable them to have broad applications in optoelectronics, laser crystals and sensing devices. The local site crystal fields can affect the intensities and peak positions of the photo-emission lines strongly, but they are usually difficult to be clarified due to magnetically degenerate 4f electronic levels coupling with the crystal fields. Here, we provide an effective way to explore the hidden local symmetry of the Eu{sup 3+} sites in different hosts by taking photoluminescence measurements under pulsed high magnetic fields up to 46 T. The zero-field photoluminescence peaks split further at high magnetic fields when the Zeeman splitting energy is comparable to or larger than that of the crystal field induced zero-field splitting. In particular, a magnetic field induced crossover of the local crystal fields has been observed in the GdVO{sub 4}:Eu{sup 3+} crystal, which resulted from the alignment of Gd{sup 3+} magnetic moment in high magnetic fields; and a hexagonally symmetric local crystal fields was observed in the YPO{sub 4} nanocrystals at the Eu{sup 3+} sites characterized by the special axial and rhombic crystal field terms. These distinct Zeeman splitting behaviors uncover the crystal fields-related local symmetry of luminescent Eu{sup 3+} centers in different hosts or magnetic environments, which are significant for their applications in optics and optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Acceptors in ZnO

Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhanced absorption in two-dimensional materials via Fano-resonant photonic crystals

The use of two-dimensional (2D) materials in optoelectronics has attracted much attention due to their fascinating optical and electrical properties. However, the low optical absorption of 2D materials arising from their atomic thickness limits the maximum attainable external quantum efficiency. For example, in the visible and near-infrared regimes monolayer MoS{sub 2} and graphene absorb only ∼10% and 2.3% of incoming light, respectively. Here, we experimentally demonstrate the use of Fano-resonant photonic crystals to significantly boost absorption in atomically thin materials. Using graphene as a test bed, we demonstrate that absorption in the monolayer thick material can be enhanced to 77% within the telecommunications band, the highest value reported to date. We also show that the absorption in the Fano-resonant structure is non-local, with light propagating up to 16 μm within the structure. This property is particularly beneficial in harvesting light from large areas in field-effect-transistor based graphene photodetectors in which separation of photo-generated carriers only occurs ∼0.2 μm adjacent to the graphene/electrode interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Semiconducting ZnSn{sub x}Ge{sub 1−x}N{sub 2} alloys prepared by reactive radio-frequency sputtering

We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSn{sub x}Ge{sub 1−x}N{sub 2} thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having <10% atomic composition (x = 0.025) of tin. These low-Sn alloys followed the structural and optoelectronic trends of the alloy series. Samples exhibited semiconducting properties, including optical band gaps and increasing in resistivities with temperature. Resistivity vs. temperature measurements indicated that low-Sn alloys were non-degenerately doped, whereas alloys with higher Sn content were degenerately doped. These films show potential for ZnSn{sub x}Ge{sub 1−x}N{sub 2} as tunable semiconductor absorbers for possible use in photovoltaics, light-emitting diodes, or optical sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Shapeable magnetoelectronics

Inorganic nanomembranes are shapeable (flexible, printable, and even stretchable) and transferrable to virtually any substrate. These properties build the core concept for new technologies, which transform otherwise rigid high-speed devices into their shapeable counterparts. This research is motivated by the eagerness of consumer electronics towards being thin, lightweight, flexible, and even wearable. The realization of this concept requires all building blocks as we know them from rigid electronics (e.g., active elements, optoelectronics, magnetoelectronics, and energy storage) to be replicated in the form of (multi)functional nanomembranes, which can be reshaped on demand after fabrication. There are already a variety of shapeable devices commercially available, i.e., electronic displays, energy storage elements, and integrated circuitry, to name a few. From the beginning, the main focus was on the fabrication of shapeable high-speed electronics and optoelectronics. Only very recently, a new member featuring magnetic functionalities was added to the family of shapeable electronics. With their unique mechanical properties, the shapeable magnetic field sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. This feature leads electronic skin systems beyond imitating the characteristics of its natural archetype and extends their cognition to static and dynamic magnetic fields that by no means can be perceived by human beings naturally. Various application fields of shapeable magnetoelectronics are proposed. The developed sensor platform can equip soft electronic systems with navigation, orientation, motion tracking, and touchless control capabilities. A variety of novel technologies, such as smart textiles, soft robotics and actuators, active medical implants, and soft consumer electronics, will benefit from these new magnetic functionalities. This review reflects the establishment of shapeable magnetic sensorics, describing the entire development from the first attempts to verify the functional concept to the realization of ready-to-use highly compliant and strain invariant sensor devices with remarkable robustness.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Understanding the optical properties of ZnO{sub 1−x}S{sub x} and ZnO{sub 1−x}Se{sub x} alloys

ZnO{sub 1−x}Y{sub x} with chalcogen element Y exhibits intriguing optoelectronic properties as the alloying strongly impacts the band-gap energy E{sub g}(x). In this work, we analyze and compare the electronic structures and the dielectric responses of Zn(O,S) and Zn(O,Se) alloys by means of the density functional theory and the partially self-consistent GW approach. We model the crystalline stability from the total energies, and the results indicate that Zn(O,S) is more stable as alloy than Zn(O,Se). We demonstrate also that ion relaxation strongly affects total energies, and that the band-gap bowing depends primarily on local relaxation of the bonds. Moreover, we show that the composition dependent band-gap needs to be analyzed by the band anti-crossing model for small alloying concentration, while the alloying band-bowing model is accurate for strong alloying. We find that the Se-based alloys have a stronger change in the band-gap energy (for instance, ΔE{sub g}(0.50) = E{sub g}(ZnO) – E{sub g}(x = 0.50) ≈ 2.2 eV) compared with that of the S-based alloy (ΔE{sub g}(0.50) = 1.2 eV), mainly due to a stronger relaxation of the Zn–anion bonds that affects the electronic structure near the band edges. The optical properties of the alloys are discussed in terms of the complex dielectric function ε(ω) = ε{sub 1}(ω) + iε{sub 2}(ω) and the absorption coefficient α(ω). While the large band-gap bowing directly impacts the low-energy absorption spectra, the high-frequency dielectric constant ε{sub ∞} is correlated to the intensity of the dielectric response at energies above 4 eV. Therefore, the dielectric constant is only weakly affected by the non-linear band-gap variation. Despite strong structural relaxation, the high absorption coefficients of the alloys demonstrate that the alloys have well-behaved optoelectronic properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10{sup −3} ∼ 10{sup −4} ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Near infrared laser annealing of CdTe and in-situ measurement of the evolution of structural and optical properties

The high performance of polycrystalline CdTe thin film solar cells is enabled by annealing in the presence of Cl. This process is typically carried out for tens of minutes resulting in reduction of defect states within the bandgap among other beneficial effects. In this work, we investigate laser annealing as a means of rapidly annealing CdTe using a continuous wave sub-bandgap 1064 nm laser. The partial transmission of the beam allows us to monitor the annealing process in-situ and in real time. We find that optoelectronic and structural changes occur through two distinct kinetic processes resulting in the removal of deep defects and twinned regions, respectively. A multilayer optical model including surface roughness is used to interpret both the in-situ transmission as well as ex-situ reflectivity measurements. These experiments demonstrate beneficial material changes resulting from sub-bandgap laser-driven CdCl{sub 2} treatment of CdTe in minutes, which is an important step towards accelerating the processing of the CdTe absorber layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Transition metal impurities are known to adversely affect the efficiency of electronic and optoelectronic devices by introducing midgap defect levels that can act as efficient Shockley-Read-Hall centers. Iron impurities in GaN do not follow this pattern: their defect level is close to the conduction band and hence far from midgap. Here, using hybrid functional first-principles calculations, we uncover the electronic properties of Fe and we demonstrate that its high efficiency as a nonradiative center is due to a recombination cycle involving excited states. Unintentional incorporation of iron impurities at modest concentrations (10 15 cm –3 ) leads to nanosecond nonradiative recombination lifetimes, which can be detrimental for the efficiency of electronic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Luminescence of defects in the structural transformation of layered tin dichalcogenides

Layered tin sulfide semiconductors are both of fundamental interest and attractive for energy conversion applications. Sn sulfides crystallize in several stable bulk phases with different Sn:S ratios (SnS 2 , Sn 2 S 3 , and SnS), which can transform into phases with a lower sulfur concentration by introduction of sulfur vacancies (V S ). How this complex behavior affects the optoelectronic properties remains largely unknown but is of key importance for understanding light-matter interactions in this family of layered materials. In this work, we use the capability to induce V S and drive a transformation between few-layer SnS 2 and SnS by electron beam irradiation, combined with in-situ cathodoluminescence spectroscopy and ab-initio calculations to probe the role of defects in the luminescence of these materials. In addition to the characteristic band-edge emission of the endpoint structures, our results show emerging luminescence features accompanying the SnS 2 to SnS transformation. Comparison with calculations indicates that the most prominent emission in SnS 2 with sulfur vacancies is not due to luminescence from a defect level but involves recombination of excitons bound to neutral V S in SnS 2 . These results provide insight into the intrinsic and defect-related optoelectronic properties of Sn chalcogenide semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of η ext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0–10 mW/cm 2 ), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Research Update: Emerging chalcostibite absorbers for thin-film solar cells

Copper antimony chalcogenides CuSbCh 2 (Ch=S, Se) are an emerging family of absorbers studied for thin-film solar cells. These non-toxic and Earth-abundant materials show a layered low-dimensional chalcostibite crystal structure, leading to interesting optoelectronic properties for applications in photovoltaic (PV) devices. This research update describes the CuSbCh 2 crystallographic structures, synthesis methods, competing phases, band structures, optoelectronic properties, point defects, carrier dynamics, and interface band offsets, based on experimental and theoretical data. Correlations between these absorber properties and PV device performance are discussed, and opportunities for further increase in the efficiency of the chalcostibite PV devices are highlighted.

14 SOLAR ENERGY↗
DOE OSTI2019

On combining the conductor-like screening model and optimally tuned range-separated hybrid density functionals

Range-separated hybrid functionals whose range-separation parameter γ has been nonempirically tuned to a particular molecule have been shown to yield frontier orbital energies and other properties in very good agreement with experiments. Yet, many cases, such as organic optoelectronic devices, require the description of molecules embedded in an environment. This can be done by combining the γ-tuning procedure with polarizable continuum models in general and the very versatile conductor-like screening model in particular. There are at least two different ways of performing this combination. The partially vertical γ-tuning employs equilibrium solvation throughout. The strictly vertical γ-tuning, on the other hand, employs nonequilibrium solvation to obtain ionization energies. Here, we compare ground-state and excited-state properties of several different molecules relevant to organic optoelectronics that were obtained using both of the two different tuning procedures. While there are significant differences in the ground-state properties, we see virtually no difference in the excited-state properties. Given these conclusions, we find that both tuning procedures have to be used in conjunction for the correct description of both ground-state and excited-state properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗