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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Effect of the Segmental Structure of Thermoplastic Polyurethane (Hardness) on the Interfacial Adhesion of Textile-Grade Carbon Fiber Composites

In polymer composites, the fiber–matrix interface is primarily influenced by the surface treatment of the fibers and polymer morphology. Previous studies have investigated the effect of surface treatment of carbon fiber on the mechanical properties of the resulting composites. However, very few studies have explored the chemical structural modification of polymer effect on the fiber–matrix adhesion. In this work, the interfaces of soft thermoplastic polyurethane (S-TPU) and hard-segmented TPU (H-TPU) were investigated through surface, thermal, and mechanical characterization. A textile-grade carbon fiber (TCF) with 1% concentration of epoxy sizing (an emerging material for nonaerospace applications with 450 K filament tows) was used as a reinforcement to investigate the structure–property relationship at the interface. Atomic force microscopy results showed 39% higher surface roughness for S-TPU than for H-TPU. X-ray photoelectron spectroscopy results revealed a 550% increase in C=O content, which can provide multiple hydrogen bonding networks in H-TPU, and these C=O bonds can produce a strong chemical bond at the fiber–matrix interface. Additionally, dynamic mechanical analysis and differential scanning calorimetry results confirmed the presence of hydrogen bonding that enhances the cross-linked density by 232% in H-TPU compared to S-TPU. The improved mechanical properties of H-TPU composites, such as flexural, impact and tensile by 30, 50, and 130% compared to S-TPU composites, prove that the crystallinity and hydrogen bonding significantly increase the load bearing capacity due to the strong interface. The mechanical properties of TCF–TPU composites validate the formation of chemical bonds through a nucleophilic addition reaction at the interface and improve the bond strength of the composites. Thus, tailoring the polyurethane structure broadens the performance of segmented TPU in conjunction with TCF reinforcement, which has implications for cost-effective, high-strength composites.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Even hard-sphere colloidal suspensions display Fickian yet non-Gaussian diffusion

In this study, we scrutinize three decades of probability density displacement distribution in a simple colloidal suspension with hard-sphere interactions. In this index-matched and density-matched solvent, fluorescent tracer nanoparticles diffuse among matrix particles that are eight times larger, at concentrations from dilute to concentrated, over times up to when the tracer diffuses a few times its size. Displacement distributions of tracers, Gaussian in pure solvent, broaden systematically with increasing obstacle density. The onset of non-Gaussian dynamics is seen in even modestly dilute suspensions, which traditionally would be assumed to follow classic Gaussian expectation. The findings underscore, in agreement with recent studies of more esoteric soft matter systems, the prevalence of non-Gaussian yet Fickian diffusion.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tracking oxygen vacancy migration in memristor devices using operando hard X-ray photoelectron spectroscopy

Fabrication of ultrathin (sub-2 nm) oxide semiconductor memristors poses the fundamental challenge of achieving oxide growth with atomic precision in terms of electronic structure and defect formation. Recently, ultrathin memristors consisting of bilayers of mixed Al 2 O 3 and MgO atomic layers were fabricated using an in vacuo atomic layer deposition process. This approach offers a unique platform for precise atomic control of oxygen vacancies in the device in which the vacancies are introduced by placing MgO atomic layers between pristine Al 2 O 3 layers. In this work, we present a systematic operando Hard X-ray PhotoElectron Spectroscopy (HAXPES) study of the switching of such memristors, combined with complementary current-voltage and capacitance-voltage (C-V) measurements. We used a memristor stack of Al 2 O 3 /MgO atomic layers, with the MgO-containing oxide deposited on the bottom Al metal electrode and a pure Al 2 O 3 layer below the top Pd electrode. HAXPES analysis shows a substantial change in the chemical shift of the Aluminum oxide when switching between the ”OFF” and ”ON” states indicative of a redistribution of oxygen vacancies in the device active layer. Interestingly, subsequent switching to the OFF state shows hysteretic behavior indicating the retention of some oxygen vacancies in the top Al 2 O 3 layer. This vacancy retention can be correlated with the stochastic behavior of the switching voltage observed in these devices. C–V measurements show a clear frequency-dependent response in the OFF state, consistent with enhanced polarization and vacancy trapping at low frequencies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Hard-to-soft transition-enhanced piezoelectricity in poly(vinylidene fluoride) via relaxor-like secondary crystals activated by high-power ultrasonication

We report although high piezoelectric coefficients have recently been observed in poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] random copolymers, they have low Curie temperatures, which makes their piezoelectricity thermally unstable. It has been challenging to achieve high piezoelectric performance from the more thermally stable PVDF homopolymer. In this report, we describe how high-power ultrasonic processing was used to induce a hard-to-soft piezoelectric transition and improve the piezoelectric coefficient d 31 in neat PVDF. After high-power ultrasonication for 20 min, a uniaxially stretched and poled PVDF film exhibited a high d 31 of 50.2 ± 1.7 pm V -1 at room temperature. Upon heating to 65 °C, the d 31 increased to a maximum value of 76.2 ± 1.2 pm V -1 , and the high piezoelectric performance persisted up to 110 °C. The enhanced piezoelectricity was attributed to the relaxor-like secondary crystals in the oriented amorphous fraction, broken off from the primary crystals by ultrasonication, as suggested by differential scanning calorimetry and broadband dielectric spectroscopy studies.

relaxor-like secondary crystals↗
DOE OSTI2011

Nanoindentation Studies Of Hard Nanocomposite Ti-B-N Thin Films

Titanium boron nitride (Ti-B-N) films were deposited by reactive magnetron sputtering using single Titanium diboride (TiB{sub 2}) target in different Ar-N{sub 2} gas mixtures. The influence of N{sub 2}:Ar ratio on the microstructure and mechanical properties of the deposited films have been investigated. Atomic force microscopy analysis indicated the grain size decreases with incorporation of nitrogen in the films. Nanoindentation studies have shown the hardness decreases with nitrogen incorporation.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Observation and simulation of hard x ray photoelectron diffraction to determine polarity of polycrystalline zinc oxide films with rotation domains

X ray photoelectron diffraction (XPD) patterns of polar zinc oxide (ZnO) surfaces were investigated experimentally using hard x rays and monochromatized Cr K{alpha} radiation and theoretically using a cluster model approach and a dynamical Bloch wave approach. We focused on photoelectrons emitted from the Zn 2p{sub 3/2} and O 1s orbitals in the analysis. The obtained XPD patterns for the (0001) and (0001) surfaces of a ZnO single crystal were distinct for a given emitter and polarity. Polarity determination of c-axis-textured polycrystalline ZnO thin films was also achieved with the concept of XPD, even though the in-plane orientation of the columnar ZnO grains was random.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Compton polarimeters for the study of hard X-rays arising from energetic collisions of electrons and ions with matter

Novel position-sensitive x-ray detectors are presented that, when applied as Compton polarimeters, enable precise and efficient linear polarization studies of hard x-rays up to several 100 keV. We give an analytical formula which yields a rough estimate of the polarimeter efficiencies of such detector systems. Moreover, we briefly summarize a recent linear polarization measurement of the Lyman-{alpha}{sub 1} radiation in a H-like high-Z system, namely U91+.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2012

Hard x-ray scanning microscopy with coherent radiation: Beyond the resolution of conventional x-ray microscopes

We demonstrate x-ray scanning coherent diffraction microscopy (ptychography) with 10 nm spatial resolution, clearly exceeding the resolution limits of conventional hard x-ray microscopy. The spatial resolution in a ptychogram is shown to depend on the shape (structure factor) of a feature and can vary for different features in the object. In addition, the resolution and contrast are shown to increase with increasing coherent fluence. For an optimal ptychographic x-ray microscope, this implies a source with highest possible brilliance and an x-ray optic with a large numerical aperture to generate the optimal probe beam.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

Electronic structure of delta-doped La:SrTiO{sub 3} layers by hard x-ray photoelectron spectroscopy

We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO{sub 3} layer that consisted of a 3-nm thickness of La-doped SrTiO{sub 3} with 6% La embedded in a SrTiO{sub 3} film. Results are compared to a thick, uniformily doped La:SrTiO{sub 3} layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti{sup 3+} in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Hard x-ray (>100 keV) imager to measure hot electron preheat for indirectly driven capsule implosions on the NIF

We have fielded a hard x-ray (>100 keV) imager with high aspect ratio pinholes to measure the spatially resolved bremsstrahlung emission from energetic electrons slowing in a plastic ablator shell during indirectly driven implosions at the National Ignition Facility. These electrons are generated in laser plasma interactions and are a source of preheat to the deuterium-tritium fuel. First measurements show that hot electron preheat does not limit obtaining the fuel areal densities required for ignition and burn.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

A single-shot transmissive spectrometer for hard x-ray free electron lasers

We report hard x-ray single-shot spectral measurements of the Linac Coherent Light Source. The spectrometer is based on a 10 {mu}m thick cylindrically bent Si single crystal operating in the symmetric Bragg geometry to provide dispersion and high transmission simultaneously. It covers a spectral range >1% using the Si(111) reflection. Using the Si(333) reflection, it reaches a resolving power of better than 42 000 and transmits >83% of the incident flux at 8.3 keV. The high resolution enabled the observation of individual spectral spikes characteristic of a self-amplified spontaneous emission x-ray free electron laser source. Potential applications of the device are discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

Band alignment of InGaZnO{sub 4}/Si interface by hard x-ray photoelectron spectroscopy

Although amorphous InGaZnO{sub 4} has intensively been studied for a semiconductor channel material of thin-film transistors in next-generation flat-panel displays, its electronic structure parameters have not been reported. In this work, the electron affinities ({chi}) and the ionization potentials (I{sub p}) of crystalline and amorphous InGaZnO{sub 4} (c-IGZO and a-IGZO) were measured using bulk-sensitive hard x-ray photoelectron spectroscopy. First, the {chi} and I{sub p} values of c-IGZO and a-IGZO thin films were estimated by aligning the Zn 2p{sub 3/2} core level energies to a literature value for ZnO, which provided {chi} = 3.90 eV and I{sub p} = 7.58 eV for c-IGZO and 4.31 eV and 7.41 eV for a-IGZO. It was also confirmed that the escape depth of the photoelectrons excited by the photon energy of 5950.2 eV is 3.3 nm for a-IGZO and large enough for directly measuring the interface electronic structure using a-IGZO/c-Si heterojunctions. It provided the valence band offset of {approx}2.3 eV, which agrees well with the above data. The present results substantiate that the a-IGZO/c-Si interface follows well the Schottky-Mott rule.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

We used hard x-ray photoelectron spectroscopy to investigate the interfacial electronic states of a poly(styrenesulfonate) doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) contact on a ZnO single crystal. An understanding of the interfacial band structure is useful for putting the organic contact to practical use. We observed upward band bending of the ZnO layer a few nanometers from the interface. The detected ZnO bulk region exhibited a flat band structure, meaning that the PEDOT:PSS does not greatly deplete the ZnO layer. The band bending caused the charge injection barrier formation with the result that the contact exhibited the Schottky property.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Probing buried organic-organic and metal-organic heterointerfaces by hard x-ray photoelectron spectroscopy

We present a nondestructive characterization method for buried hetero-interfaces for organic/organic and metal/organic systems using hard x-ray photoelectron spectroscopy (HAXPES) which can probe electronic states at depths deeper than {approx}10 nm. A significant interface-derived signal showing a strong chemical interaction is observed for Au deposited onto a C{sub 60} film, while there is no such additional feature for copper phthalocyanine deposited onto a C{sub 60} film reflecting the weak interaction between the molecules in the latter case. A depth analysis with HAXPES reveals that a Au-C{sub 60} intermixed layer with a thickness of 5.1 nm is formed at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Stoichiometry dependent phase transition in Mn-Co-Ga-based thin films: From cubic in-plane, soft magnetized to tetragonal perpendicular, hard magnetized

Epitaxial thin films of Mn{sub 3-x}Co{sub x}Ga were grown on MgO by magnetron co-sputtering with different Co content. Dependent on the Co content tetragonal or cubic structures are obtained. The composition dependence of saturation magnetization M{sub S} and uniaxial magnetic anisotropy K{sub u} in the epitaxial films were investigated. A high magnetic anisotropy K{sub u} of 1.2 MJ m{sup -3} was achieved for the Mn{sub 2.6}Co{sub 0.3}Ga{sub 1.1} film with low magnetic moment of 0.84 {mu}{sub B}. The valence band spectra of the films were investigated mainly by hard x-ray photoelectron spectroscopy. The evidence of sharp states in the cubic case, which are smeared out in the tetragonal case, proof the existence of a van Hove singularity that causes a band Jahn-Teller effect accompanied by a tetragonal distortion. These differences are in well agreement to the ab-initio calculations of the electronic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Interferometric hard x-ray phase contrast imaging at 204 nm grating period

We report on hard x-ray phase contrast imaging experiments using a grating interferometer of approximately 1/10th the grating period achieved in previous studies. We designed the gratings as a staircase array of multilayer stacks which are fabricated in a single thin film deposition process. We performed the experiments at 19 keV x-ray energy and 0.8 {mu}m pixel resolution. The small grating period resulted in clear separation of different diffraction orders and multiple images on the detector. A slitted beam was used to remove overlap of the images from the different diffraction orders. The phase contrast images showed detailed features as small as 10 {mu}m, and demonstrated the feasibility of high resolution x-ray phase contrast imaging with nanometer scale gratings.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Large-field high-contrast hard x-ray Zernike phase-contrast nano-imaging beamline at Pohang Light Source

We developed an off-axis-illuminated zone-plate-based hard x-ray Zernike phase-contrast microscope beamline at Pohang Light Source. Owing to condenser optics-free and off-axis illumination, a large field of view was achieved. The pinhole-type Zernike phase plate affords high-contrast images of a cell with minimal artifacts such as the shade-off and halo effects. The setup, including the optics and the alignment, is simple and easy, and allows faster and easier imaging of large bio-samples.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

Near-surface structures of polar InN films were investigated by laboratory-based hard X-ray photoelectron diffraction (HXPD) with chemical-state-discrimination. HXPD patterns from In 3d{sub 5/2} and N 1s core levels of the In-polar and N-polar InN films were different from each other and compared with the simulation results using a multiple-scattering cluster model. It was found that the near-surface structure of the In-polar InN film was close to the ideal wurtzite structure. On the other hand, on the N-polar InN film, defects-rich surface was formed. In addition, the existence of the In-polar domains was observed in the HXPD patterns.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗