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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Mechanisms enabling reconfigurability and long-term retention in vanadium oxide electrochemical memory

Phase coexistence in nanoscale electrochemical random-access memory (ECRAM) has recently been demonstrated to enable both information storage and extraordinary reconfigurability. These proof-of-principle demonstrations have left the mechanistic details of such a process unresolved. Particularly, the mechanisms that stabilize the multiple phases, and the underlying processes behind sustained memory retention, remain unclear, and are necessary to design such devices. Here we report microscale ECRAM devices composed of V⁢O𝑥, which enables us to directly probe the active region in an operando fashion using optical techniques. Using Raman mapping, we show the phase coexistence driven by the electrochemical injection of O vacancies to be spatially uniform (i.e., with no filaments). The stability was observed to be unusually long, with 1% loss over 14 years in ambient conditions. First-principles calculations of the oxygen vacancy formation energies in V⁢O 𝑥 further support the thermodynamic coexistence of multiple V⁢O 𝑥 phases and clarify the origin of the observed long-term retention in the ECRAM devices. Further, we demonstrate single devices that can be voltage programmed to exhibit synaptic, neuronal, and reconfigurable logic gate functionalities. Furthermore, we not only uncover the phase coexistence mechanism that may help device design, but also demonstrate the circuit-level applications of reconfigurability.

Electrical conductivity↗
DOE OSTI2026

Double Aperture HTS Dipole Magnet Model for the Persistent Current Operation

Particle accelerators use many different types of magnets. There is an interest in replacing rather low-field conventional resistive magnets with high-temperature superconducting (HTS) magnets. The main goal is to reduce operational expenses, which is critical during the continuously increasing cost of electricity. At Fermilab, several HTS accelerator magnets were built and successfully tested. The paper described a variant of the double-aperture dipole magnet that could be suitable for future Lepton Colliders. A single short-circuited HTS coil of 3.8 kA generates a homogeneous magnetic field of 57 mT in both magnet gaps of 84 mm. The short model magnet was designed, built, and successfully tested at liquid nitrogen temperature. This magnet works in a persistent current mode, which provides additional cost savings when used in particle storage rings operated at a stable magnetic field. The results of design, fabrication, and tests are presented and discussed. The magnet demonstrated a high magnetic field stability in both apertures, efficiency of correction coils, and primary powering circuit.

Kashikhin, Vladimir [Fermilab] (ORCID:000000017249↗
DOE OSTI2024

Nanoscale Probing of Electrical Memory Effects in van der Waals Layered PdSe 2

Tunable electronic materials that can be switched between different impedance states are fundamental to the hardware elements for neuromorphic computing architectures. This “brain-like” computing paradigm uses highly paralleled and colocated data processing, leading to greatly improved energy efficiency and performance compared to traditional architectures in which data have to be frequently transferred between processor and memory. In this work, we use scanning microwave impedance microscopy for nanoscale electrical and electronic characterization of two-dimensional layered semiconductor PdSe 2 to probe neuromorphic properties. The local resolution of tens of nanometers reveals significant differences in electronic behavior between and within PdSe 2 nanosheets (NSs). In particular, we detected both n-type and p-type behaviors, although previous reports only point to ambipolar n-type dominating characteristics. Nanoscale capacitance–voltage curves and subsequent calculation of characteristic maps revealed a hysteretic behavior originating from the creation and erasure of Se vacancies as well as the switching of defect charge states. In addition, stacks consisting of two NSs show enhanced resistive and capacitive switching, which is attributed to trapped charge carriers at the interfaces between the stacked NSs. Stacking n- and p-type NSs results in a combined behavior that allows one to tune electrical characteristics. In conclusion, as local inhomogeneities of electrical and electronic behavior can have a significant impact on the overall device performance, the demonstrated nanoscale characterization and analysis will be applicable to a wide range of semiconducting materials.

2D material↗
DOE OSTI2024

Local strain inhomogeneities during electrical triggering of a metal–insulator transition revealed by X-ray microscopy

Electrical triggering of a metal–insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a conducting matrix. When MIT triggering is driven by electrothermal effects, the temperature of the filament or barrier can be substantially higher than the rest of the material. Using X-ray microdiffraction and dark-field X-ray microscopy, we show that electrothermal MIT triggering leads to the development of an inhomogeneous strain profile across the switching device, even when the material does not undergo a pronounced, discontinuous structural transition coinciding with the MIT. Diffraction measurements further reveal evidence of unique features associated with MIT triggering including lattice distortions, tilting, and twinning, which indicate structural nonuniformity of both low- and high-resistance regions inside the switching device. Such lattice deformations do not occur under equilibrium, zero-voltage conditions, highlighting the qualitative difference between states achieved through increasing temperature and applying voltage in nonlinear electrothermal materials. Electrically induced strain, lattice distortions, and twinning could have important contributions in the MIT triggering process and drive the material into nonequilibrium states, providing an unconventional pathway to explore the phase space in strongly correlated electronic systems.

42 ENGINEERING↗
DOE OSTI2021

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

The implementation of 5G-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, which are only possible with materials that can support higher frequencies. Gallium nitride (GaN) power amplifiers are essential for 5G-and-beyond technologies since they provide the desired combination of high frequency and high power. These applications along with terrestrial hub and backhaul communications at high power output can present severe heat removal challenges. The cooling of GaN devices with diamond as the heat spreader has gained significant momentum since device self-heating limits GaN’s performance. However, one of the significant challenges in integrating polycrystalline diamond on GaN devices is maintaining the device performance while achieving a low diamond/GaN channel thermal boundary resistance. In this study, we achieved a record-low thermal boundary resistance of around 3.1 ± 0.7 m 2 K/GW at the diamond/Si 3 N 4 /GaN interface, which is the closest to theoretical prediction to date. The diamond was integrated within ~1 nm of the GaN channel layer without degrading the channel’s electrical behavior. Furthermore, we successfully minimized the residual stress in the diamond layer, enabling more isotropic polycrystalline diamond growth on GaN with thicknesses >2 μm and a ~1.9 μm lateral grain size. More isotropic grains can spread the heat in both vertical and lateral directions efficiently. Using transient thermoreflectance, the thermal conductivity of the grains was measured to be 638 ± 48 W/m K, which when combined with the record-low thermal boundary resistance makes it a leading-edge achievement.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Alternating-bias assisted annealing of amorphous oxide tunnel junctions

Superconducting quantum bits (qubits) rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects as grown. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. Finding a robust solution to the junction reproducibility problem has been a long-standing goal in the field. Here, we demonstrate a transformational technique for controllably tuning the electrical properties of aluminum-oxide tunnel junctions. This is accomplished using a low-voltage, alternating-bias applied individually to the tunnel junctions, with which resistance tuning by more than 70% can be achieved. The data indicates an improvement of coherence and reduction of two-level system defects. Transmission electron microscopy shows that the treated junctions are predominantly amorphous, albeit with a more uniform distribution of alumina coordination across the barrier. This technique is expected to be useful for other devices based on ionic amorphous materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal and thermoelectric properties of an antiferromagnetic topological insulator MnBi 2 Te 4

The discovery of an intrinsic antiferromagnetic topological insulator (AFMTI) in MnBi 2 Te 4 has attracted intense attention, most of which lies in its electrical properties. Here in this paper, we report electronic, thermal, and thermoelectric transport studies of this newly found AFMTI. The temperature and magnetic field dependence of its resistivity, thermal conductivity, and Seebeck coefficient indicate strong coupling between charge, lattice, and spin degrees of freedom in this system. Furthermore, MnBi 2 Te 4 exhibits a large anomalous Nernst signal, which is associated with nonzero Berry curvature of the field-induced canted antiferromagnetic state.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Perfect Coulomb drag and exciton transport in an excitonic insulator

Strongly coupled electron-hole bilayers can host quantum states of interlayer excitons, such as high-temperature exciton condensates at zero magnetic field. This state is predicted to feature perfect Coulomb drag, where a current in one layer is accompanied by an equal but opposite current in the other. We used an optical technique to probe the electrical transport of correlated electron-hole bilayers based on MoSe2/hBN/WSe2 heterostructures. We observed perfect Coulomb drag in the excitonic insulator phase at low temperatures; the counterflow resistance of interlayer excitons remained finite. These results indicate the formation of an exciton gas that does not condense into a superfluid. Our work demonstrates that dynamic optical spectroscopy provides a powerful tool for probing exciton transport behavior in correlated electron-hole fluids.

Qi, Ruishi↗
DOE OSTI2022

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Abstract To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in the substrate and epitaxial layers. Raman spectroscopy was used to identify points of high crystal stress and non-uniform conductivity in a substrate, while optical profilometry was used to identify bumps and pits in a substrate which could cause catastrophic device failures. The effect of the defects was studied using vertical P-i-N diodes with a single zone junction termination extention (JTE) edge termination and isolation, which were formed via nitrogen implantation. Diodes were fabricated on and off of sample abnormalities to study their effects. From electrical measurements, it was discovered that the devices could consistently block voltages over 1000 V (near the theoretical value of the epitaxial layer design), and the forward bias behavior could consistently produce on-resistance below 2 mΩ cm 2 , which is an excellent value considering DC biasing was used and no substrate thinning was performed. It was found that high crystal stress increased the probability of device failure from 6 to 20%, while an inhomogeneous carrier concentration had little effect on reverse bias behavior, and slightly (~ 3%) increased the on-resistance (R on ). Optical profilometry was able to detect regions of high surface roughness, bumps, and pits; in which, the majority of the defects detected were benign. However a large bump in the termination region of the JTE or a deep pit can induce a low voltage catastrophic failure, and increased crystal stress detected by the Raman correlated to the optical profilometry with associated surface topography.

42 ENGINEERING↗
DOE OSTI2026

Modulating charge transport via 2 MeV He + irradiation in VO 2

Vanadium dioxide (VO 2 ) is of interest for adaptive electronic applications such as neuromorphic neuristor devices and variable emissivity or tunable thermal control materials, thanks to its key property—a metal–insulator transition (MIT) at 68 °C that is accompanied by a dramatic change in electrical and optical properties. To improve performance in these roles, it is critical to develop approaches to engineer transport properties and the MIT behavior. While many documented techniques exist to modulate the MIT and film resistivities via lattice strain and chemical doping, less is known about the effects of ion irradiation on the intrinsic properties of VO 2 , despite the ability to control the spatial distribution of irradiation beams and the prevalence of high energy ion implantation in the semiconductor industry. The impact of irradiation of different acceleration energies on the responses of VO 2 is of specific interest, as charged particle energy generally impacts both the resulting defect profile and corresponding transport behavior. Here, we demonstrate that 2 MeV He ions at equivalent calculated displacements per atom, in two different types of films, can create remarkable changes to the nature of charge transport in VO 2 , especially in the low-temperature insulating phase. Simulation of resulting changes in electrical conductivity reveals that He ion irradiation offers a strategy to increase both oscillation frequency and the signal transmission. These results provide insights into the intentional design of defect populations to modulate transport for neuromorphic VO 2 devices.

Gurrola, Rebeca M. [Texas A & M Univ., College Sta↗
DOE OSTI2026

Bandgap Engineering of Ga 2 O 3 by MOCVD Through Alloying with Indium

Ga 2 O 3 and In 2 O 3 are vital semiconductors with current and future electronic device applications. Here, we study the alloying of In 2 O 3 and Ga 2 O 3 (IGO) and the associated changes in structure, morphology, band gap, and electrical transport properties. Undoped films of IGO were deposited on sapphire substrates with varying indium (In) percentage from zero to 100% by metal-organic chemical vapor deposition (MOCVD). Some films were annealed in H 2 to induce electrical conductivity. The measurements showed the optical band gap decreased by adding In; this was confirmed by density functional (DFT) calculations, which revealed that the nature of the valence band maximum and conduction band minimum strongly relate to the chemistry and that the band gap drops by adding In. The as-grown films were highly resistive except for pure In 2 O 3 , which possesses p-type conductivity, likely arising from In vacancy-related acceptor states. N-type conductivity was induced in all films after H-anneal. DFT calculations revealed that the presence of In decreases the electron effective mass, which is consistent with the electrical transport measurements that showed higher electron mobility for higher In percentage. The work revealed the successful band gap engineering of IGO and the modification of its band structure while maintaining high-quality films by MOCVD.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Do agrivoltaics improve public support for solar? A survey on perceptions, preferences, and priorities

Abstract Agrivoltaic systems integrate agricultural production with solar photovoltaic electricity generation. Given the proven technical, economic, and environmental co-benefits provided by agrivoltaic systems, increased proliferation is anticipated, which necessitates accounting for the nuances of community resistance to solar development on farmland and identifying pathways for mitigation. Minimizing siting conflict and addressing agricultural communities’ concerns will be key in continued deployment of agrivoltaics, as localized acceptance of solar is a critical determinant of project success. This survey study assessed if public support for solar development increases when energy and agricultural production are combined in an agrivoltaic system. Results show that 81.8% of respondents would be more likely to support solar development in their community if it integrated agricultural production. This increase in support for solar given the agrivoltaic approach highlights a development strategy that can improve local social acceptance and the deployment rate of solar. Survey respondents prefer agrivoltaic projects that a) are designed to provide economic opportunities for farmers and the local community b) are not located on public property c) do not threaten local interests and d) ensure fair distribution of economic benefits. Proactively identifying what the public perceives as opportunities and concerns related to agrivoltaic development can help improve the design, business model, and siting of systems in the U.S.

Pascaris, Alexis S. (ORCID:0000000253806927)↗
DOE OSTI2021

A Catastrophic Charge Density Wave in BaFe 2 Al 9

Charge density waves (CDWs) are modulations of the electron density and the atomic lattice that develop in some crystalline materials at low temperatures. We report an unusual example of a CDW in BaFe 2 Al 9 below 100 K. In contrast to the canonical CDW phase transition, temperature-dependent physical properties of single crystals reveal a first-order phase transition. This is accompanied by a discontinuous change in the size of the crystal lattice. In fact, this large strain has catastrophic consequences for the crystals causing them to physically shatter. Single-crystal X-ray diffraction reveals superlattice peaks in the low-temperature phase signaling the development of a CDW lattice modulation. No similar low-temperature transitions are observed in BaFe 2 Al 9 . Electronic structure calculations provide one hint to the different behavior of these two compounds; the d-orbital states in the Fe compound are not completely filled. Iron compounds are renowned for their magnetism, and partly filled d-states play a key role. Finally, it is therefore surprising that BaFe 2 Al 9 develops a structural modulation at low temperature instead of magnetic order.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Anisotropic positive linear and sub-linear magnetoresistivity in the cubic type-II Dirac metal Pd 3 In 7

We report a transport study on Pd 3 In 7 which displays multiple Dirac type-II nodes in its electronic dispersion. Pd 3 In 7 is characterized by low residual resistivities and high mobilities, which are consistent with Dirac-like quasiparticles. For an applied magnetic field (μ 0 H) having a non-zero component along the electrical current, we find a large, positive, and linear in μ 0 H longitudinal magnetoresistivity (LMR). The sign of the LMR and its linear dependence deviate from the behavior reported for the chiral-anomaly-driven LMR in Weyl semimetals. Interestingly, such anomalous LMR is consistent with predictions for the role of the anomaly in type-II Weyl semimetals. In contrast, the transverse or conventional magnetoresistivity (CMR for electric fields E⊥μ 0 H) is large and positive, increasing by 10 3 –10 4 % as a function of μ 0 H while following an anomalous, angle-dependent power law ρ xx α (μ 0 H) n with n(θ) ≤ 1. The order of magnitude of the CMR, and its anomalous power-law, is explained in terms of uncompensated electron and hole-like Fermi surfaces characterized by anisotropic carrier scattering likely due to the lack of Lorentz invariance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Dynamic Formation of a Transient Jet from Arched Magnetized Laboratory Plasma

Abstract A laboratory plasma experiment was built to explore the eruptive behavior of arched magnetized plasmas with dimensionless parameters relevant to the Sun’s photosphere ( β ≈ 10 −3 , Lundquist number ≈10 4 , plasma radius/ion gyroradius ≈20, ion–neutral collision frequency ≫ion cyclotron frequency). Dynamic formation of a transient plasma jet was observed in the presence of the strapping magnetic field. The eruption leading to the jet is unintuitive because the arched plasma is both kink- and torus-stable. The jet structure erupts within a few Alfvén transit times from the formation of the arched plasma. Extensive measurements of plasma temperature, density, magnetic field, and flows are presented. In its early stages, the jet plasma flows away from the arch with supersonic speeds (Mach 1.5). This high-speed flow persists up to the resistive diffusion time in the arched plasma and is driven by large gradients in the magnetic and thermal pressures near the birthplace of jets. There are two distinct electric current channels within the jet, one consisting of outgoing electrons and another composed of electrons returning to the anode footpoint. Significant current density around the jet is a consequence of the diamagnetic current produced by a large thermal pressure gradient in the jet. Ion–neutral charge-exchange collisions provide an efficient mechanism to produce the cross-field current and control the dynamics of the complex current channels of the jet.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Impedance-Based Detection of NO 2 Using Ni-MOF-74: Influence of Competitive Gas Adsorption

Chemically robust, low-power sensors are needed for the direct electrical detection of toxic gases. Metal–organic frameworks (MOFs) offer exceptional chemical and structural tunability to meet this challenge, though further understanding is needed regarding how coadsorbed gases influence or interfere with the electrical response. To probe the influence of competitive gases on trace NO 2 detection in a simulated flue gas stream, a combined structure–property study integrating synchrotron powder diffraction and pair distribution function analyses was undertaken, to elucidate how structural changes associated with gas binding inside Ni-MOF-74 pores correlate with the electrical response from Ni-MOF-74-based sensors. Data were evaluated for 16 gas combinations of N 2 , NO 2 , SO 2 , CO 2 , and H 2 O at 50 °C. Fourier difference maps from a rigid-body Rietveld analysis showed that additional electron density localized around the Ni-MOF-74 lattice correlated with large decreases in Ni-MOF-74 film resistance of up to a factor of 6 × 10 3 , observed only when NO 2 was present. These changes in resistance were significantly amplified by the presence of competing gases, except for CO 2 . Without NO 2 , H 2 O rapidly (<120 s) produced small (1–3×) decreases in resistance, though this effect could be differentiated from the slower adsorption of NO 2 by the evaluation of the MOF’s capacitance. Furthermore, samples exposed to H 2 O displayed a significant shift in lattice parameters toward a larger lattice and more diffuse charge density in the MOF pore. Evaluating the Ni-MOF-74 impedance in real time, NO 2 adsorption was associated with two electrically distinct processes, the faster of which was inhibited by competitive adsorption of CO 2 . Together, this work points to the unique interaction of NO 2 and other specific gases (e.g., H 2 O, SO 2 ) with the MOF’s surface, leading to orders of magnitude decrease in MOF resistance and enhanced NO2 detection. Finally, understanding and leveraging these coadsorbed gases will further improve the gas detection properties of MOF materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Impact of cycling conditions on lithium-ion battery performance for electric vertical takeoff and landing applications

The development of better electrochemical energy storage systems has sparked significant interest in using Li-ion batteries for electric vertical takeoff and landing (eVTOL) applications. To ensure the optimal performance and safety of onboard batteries, their behavior under different charging/discharging protocols and environmental conditions must be understood. Here, this paper presents a comprehensive evaluation of commercial Li-ion batteries for eVTOL applications, focusing on their responses to varying charging/discharging strategies and mechanical vibrations experienced during flight. Through controlled experiments, the effects of rapid cycling on battery performance were investigated, including effects on lifespan, capacity, and internal resistance. Additionally, the impact of mechanical vibrations on battery behavior was assessed to identify potential challenges for onboard batteries. The results of this study revealed intriguing insights into the interplay between temperature, vibration, and battery performance. This work contributes to the broader adoption of electric aerial transportation, promising a greener and safer future for urban mobility.

18650 cells↗