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At least 973 records · Page 54

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DOE OSTI2025

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS 2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS 2 ) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS 2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induced modifications, particularly with Raman lasers, offer a straightforward method to modulate materials via thermal processes with precise patterning control and energy-level flexibility. However, most studies on the modification of MoS 2 have focused on multilayered structures or have been conducted under low-power laser conditions, leaving the feasibility of structural modifications in monolayer MoS 2 elusive. In this study, we fundamentally elucidated the effects of high-power Raman laser irradiation on the surface of chemical vapor deposition (CVD)-grown monolayer MoS 2 under ambient conditions and uncovered the underlying mechanisms of laser-induced modifications by applying intense photon energy with highly interactive reactions. Our results revealed both etching and deposition phenomena in two discernible regions, and it can be demonstrated by intensity regimes based on the spatial distribution of laser irradiance within the laser-irradiated spot. Furthermore, phase transition was found to be inhibited due to the promoted oxidation and the deposition of hydrogenated amorphous carbon (a-C:H), and p-type doping was observed, likely occurring in the region beneath the a-C:H deposition as substitutional doping on the 2H phase of MoS 2 . To compare the thermal effects, MoS 2 modifications were further analyzed using simplified heat transfer estimations. In conclusion, these findings deepen our understanding of how Raman laser irradiation modifies MoS 2 under ambient conditions, providing guidelines for optimizing its modification processes.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Single-Particle Spectroscopy as a Versatile Tool to Explore Lower-Dimensional Structures of Inorganic Perovskites

The remarkable defect tolerant nature of inorganic cesium halide perovskites leading to near unity photoluminescence (PL) quantum yield (QY) and narrow emission linewidth across the entire visible spectrum, have provided a tantalizing platform for a development of a plethora of light-emitting applications. Recently, lower dimensional (2D, 1D, and 0D) perovskites have attracted further attention due to the enhanced thermal, photo and chemical stability as compared to their three-dimensional (3D) analogues. Combination of the external size quantization and internal octahedral organization provides a unique opportunity to study and harness “multidimensional” electronic properties engineered both on atomic scale and the nanoscale. However, crucial research to understand the elementary charge carrier dynamics in lower dimensional perovskites lags far behind the enormous effort to incorporate them into optoelectronic devices. In this Perspective, we provide a review of recent developments that focus on studies of the dynamics of excitonic complexes in Cs-based perovskite nanocrystals using single-particle time-resolved PL spectroscopy and photon correlation measurements. Single photon statistical studies not only offer the unprecedented level of detail to directly assess various recombination pathways but also provide insights into specifics of carrier’s localization. Further, we discuss the underlying physicochemical processes that govern PL emission and draw attention to a number of attributes within this class of the materials, especially lower-dimensional perovskites that may indicate the common origin of the PL emission, as well as provide a route map for the vast unexplored territories where single particle spectroscopy can be a powerful tool to unravel crucial information.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Remarkable heat conduction mediated by non-equilibrium phonon polaritons

Surface waves can lead to intriguing transport phenomena. In particular, surface phonon polaritons (SPhPs), which result from coupling between infrared light and optical phonons, have been predicted to contribute to heat conduction along polar thin films and nanowires. However, experimental efforts so far suggest only very limited SPhP contributions. Through systematic measurements of thermal transport along the same 3C-SiC nanowires with and without a gold coating on the end(s) that serves to launch SPhPs, here we show that thermally excited SPhPs can substantially enhance the thermal conductivity of the uncoated portion of these wires. The extracted pre-decay SPhP thermal conductance is more than two orders of magnitude higher than the Landauer limit predicted on the basis of equilibrium Bose–Einstein distributions. Here, we attribute the notable SPhP conductance to the efficient launching of non-equilibrium SPhPs from the gold-coated portion into the uncoated SiC nanowires, which is strongly supported by the observation that the SPhP-mediated thermal conductivity is proportional to the length of the gold coating(s). The reported discoveries open the door for modulating energy transport in solids by introducing SPhPs, which can effectively counteract the classical size effect in many technologically important films and improve the design of solid-state devices.

42 ENGINEERING↗

DOE OSTI2021

Thermal hysteresis controlled reconfigurable MoS 2 nanomechanical resonators

Two-dimensional (2D) structures from layered materials have enabled a number of novel devices including resonant nanoelectromechanical systems (NEMS). 2D NEMS resonators are highly responsive to strain, allowing their resonance frequencies to be efficiently tuned over broad ranges, which is a feature difficult to attain in conventional micromachined resonators. In electrically configured and tuned devices, high external voltages are typically required to set and maintain different frequencies, limiting their applications. Here we experimentally demonstrate molybdenum disulfide (MoS 2 ) nanomechanical resonators that can be reconfigured between different frequency bands with zero maintaining voltage in a non-volatile fashion. By leveraging the thermal hysteresis in these 2D resonators, we use heating and cooling pulses to reconfigure the device frequency, with no external voltage required to maintain each frequency. Here, we further show that the frequency spacing between the bands can be tuned by the thermal pulse strength, offering full control over the programmable operation. Such reconfigurable MoS 2 resonators may provide an alternative pathway toward small-form-factor and low-power tunable devices in future reconfigurable radio-frequency circuits with multi-band capability.

42 ENGINEERING↗

DOE OSTI2021

Hierarchical Power Flow Control in Smart Grids: Enhancing Rotor Angle and Frequency Stability with Demand-Side Flexibility

Large-scale integration of renewables in power systems gives rise to new challenges for keeping synchronization and frequency stability in volatile and uncertain power flow states. To ensure the safety of operation, the system must maintain adequate disturbance rejection capability at the time scales of both rotor angle and system frequency dynamics. This calls for flexibility to be exploited on both the generation and demand sides, compensating volatility and ensuring stability at the two separate time scales. This article proposes a hierarchical power flow control architecture that involves both transmission and distribution networks as well as individual buildings to enhance both small-signal rotor angle stability and frequency stability of the transmission network. The proposed architecture consists of a transmission-level optimizer enhancing system damping ratios, a distribution-level controller following transmission commands and providing frequency support, and a building-level scheduler accounting for quality of service and following the distribution-level targets. Furthermore, we validate the feasibility and performance of the whole control architecture through real-time hardware-in-loop tests involving real-world transmission and distribution network models along with real devices at the Stone Edge Farm Microgrid.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2023

SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm 2

Thermal management has become a major barrier in the development of high-power micro-devices. Microchannel heat sinks (MCHS) are a promising method to dissipate high heat fluxes from high power density devices. Reducing the thermal resistance will reduce the temperature increase of the electronic device, allowing for higher powers to be achieved while maintaining a safe operating temperature. This paper reports on the use of silicon carbide (Sic) microchannels to dissipate high heat fluxes up to 1 kW/cm 2 over a footprint of 0.25 cm 2 . The use of high aspect ratio and decreased hydraulic diameter channels has allowed for very low thermal resistances to be achieved at higher heat duties compared to previous studies. The experiments performed resulted in heater temperatures of less than 60 °C and thermal resistances as low as 0.024 cm 2 . ° $C$/W between the heater surface and fluid inlet temperature. In conclusion, the demonstrated thermal performance of the SiC MCHS is an encouraging means for dissipating heat from high power density microelectronic devices.

42 ENGINEERING↗

DOE OSTI2020

Factors and Considerations for Modeling Loss of a GaN-based Inverter

The article investigates the impacts of four often-neglected factors on the loss model of a GaN-based full-bridge inverter: parasitic capacitance of the devices, dynamics of junction temperature (Tj) under time-varying power dissipation (Ploss), case temperature estimation, and detailed considerations of the passive components. Procedures to calculate the converter loss considering the above factors are proposed and implemented. A 4.5-kW hard-switching inverter prototype using gallium nitrite (GaN) high-electron-mobility transistors is used to experimentally demonstrate the impact of each factor on the converter loss model. Furthermore, it is found that the accuracy of a converter loss model is mainly affected by the passive components at the light load condition, whereas the thermal and loss models of the active components become the major factors as the output power increases. The results show that after considering the above factors, the converter loss discrepancy between calculation and measurement can be reduced from 30.6 W (28%) to 2.5 W (less than 3%) at heavy load (Po = 4.5 kW), while at the light load condition (Po = 500 W), it is reduced from 3.9 W (28%) to 2.6 W (16%). Furthermore, the difference between simulated and measured case temperature of the GaN devices is within 6 °C.

42 ENGINEERING↗

DOE OSTI2021

System Validation Platform Working Directories

A suite of software tools used to interface with power electronic equipment for laboratory testing and device certification. They are typically used as equipment drivers with using the System Validation Platform (SVP) graphical user interface (GUI). Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. SAND2021-1185 O

Johnson, JayT↗

DOE OSTI2020

Lawrence Livermore National Laboratory ABSL-3 Tissue Digester (8 July 2020 Run Data Report, Report 3)

Purpose: Provide data from a water run of the LLNL tissue digester to confirm operational status for possible extension of Medical Waste permit, since the annual recertification maintenance and testing could not take place due to the shelter-in-place of the tissue digester vendor who is located outside of California. This is a unique medical waste device and the vendor who certifies our other medical waste equipment (permitted autoclaves), does not service the tissue digester.

42 ENGINEERING↗

DOE OSTI2020

Hawai‘i National Marine Renewable Energy Center (HINMREC)

The Hawaii National Marine Renewable Energy Center (HINMREC) was established to facilitate the commercialization of wave energy converter (WEC) devices, and to accelerate development and testing of Ocean Thermal Energy Conversion (OTEC) technologies. Housed at the Hawaii Natural Energy Institute (HNEI) of the University of Hawaii (UH), this program started with execution of the contract between the US Department of Energy (DOE) and UH in March 2009, and activities ran through the end of the project in September 2019. The DOE tasked HINMREC with facilitating and accelerating the build-out of the Navy’s Wave Energy Test Site (WETS), the nation’s first grid-connected open water wave energy conversion test facility, located off Marine Corps Base Hawaii (MCBH) in Kaneohe, on the island of Oahu. WETS was expanded from an existing test berth at 30m water depth to include test berths at 60m and 80m water depths. In recognition of the high costs associated with at-sea testing and evaluation of WEC devices, it was deemed imperative that HINMREC seek ways to reduce costs to developers by providing key research support to these early-stage technologies. WETS and HINMREC’s support allowed development of wave energy technology by providing a testing infrastructure that allows technology developers to test, demonstrate and evaluate their WEC devices, and generate data in order to advance WEC designs toward commercial readiness. HINMREC’s roles have included support in the establishment of the full site, including of wave resource characterization and site survey, followed by the essential roles of independent WEC device power performance assessment and environmental monitoring in support of deployed pre-commercial WECs. This DOE-funded work transitioned effectively to continue Navy-funded tasks for OTEC development, and activities at WETS, now under Naval Facilities Engineering Command (NAVFAC) funding. A secondary objective in the establishment of HINMREC was to assist the private sector in moving OTEC systems beyond proof-of-concept to pre-commercialization, primarily focused on system and component engineering, and local and global investigations into the potential environmental impacts of OTEC systems. HINMREC was tasked with maintaining high-resolution models of ocean thermal resources and the potential sustainable power output of OTEC systems. Ongoing tests begun previously under Navy funding at the OTEC Heat Exchangers (HXs) Test Facility at the Natural Energy Laboratory of Hawaii Authority (NELHA), in Kona on Hawaii Island, have been continued to identify cost-effective aluminum alloys for use in OTEC systems operating in the corrosive marine environment.

16 TIDAL AND WAVE POWER↗

DOE OSTI2022

Workshop on Ultra-Precision Control for Ultra-Efficient Devices (Workshop Report)

On April 21–23, the U.S. Department of Energy’s (DOE’s) Advanced Manufacturing Office (AMO) within the office of Energy Efficiency and Renewable Energy (EERE) held the second in a series of workshops on different topics related to semiconductor research and development (R&D) to increase energy efficiency. This workshop focused on ultra-energy-efficient devices and the ultra-precision manufacturing (UPM) processes and next-generation control and metrology technologies needed to manufacture these devices. In addition to the industry needs and RDD&D opportunities, AMO’s new goal on greenhouse gas (GHG) reduction was addressed. The output of this workshop will inform AMO’s future R&D portfolio investments; provide perspectives on trends, drivers, and challenges for ultra-energy-efficient devices and enabling technologies; and help the stakeholder community understand the opportunities on the horizon.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2022

Nonvolatile Memories in Spiking Neural Network Architectures: Current and Emerging Trends

A sustainable computing scenario demands more energy-efficient processors. Neuromorphic systems mimic biological functions by employing spiking neural networks for achieving brain-like efficiency, speed, adaptability, and intelligence. Current trends in neuromorphic technologies address the challenges of investigating novel materials, systems, and architectures for enabling high-integration and extreme low-power brain-inspired computing. This review collects the most recent trends in exploiting the physical properties of nonvolatile memory technologies for implementing efficient in-memory and in-device computing with spike-based neuromorphic architectures.

42 ENGINEERING↗

DOE OSTI2020

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Solvent depression of transition temperature to selectively stimulate actuation of shape memory polymer foams

An embodiment of the invention is a shape memory polymer (SMP) foam designed to recover its original shape through exposure to a solvent. Thermo-responsive SMPs are polymers designed to maintain a programmed secondary shape until heated above their transition temperature, upon which the polymer recovers its original, or primary, shape. The thermo-responsive SMP foam is programmed to its secondary shape prior to use, typically compression of the foam to a small volume, and remains in this programmed shape until exposed to a selected solvent such as dimethyl sulfoxide or ethyl alcohol. Upon exposure to the solvent, the transition temperature of the SMP foam decreases below the temperature of the environment and the SMP foam actuates to its primary shape. The SMP foam is tailored to actuate upon exposure to specific solvents while minimizing or preventing actuation when exposed to water or other solvents. This selective solvent actuation can be used to increase working time of a SMP foam device, that is, the time allowed for use of a device without undesired actuation, while maintaining functional SMP actuation. Solvent actuated SMP foams can be used in various applications including, but not limited to, treatment of aneurysms and arterio-venous malformations, tissue engineering, and wound healing.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Metal oxide semiconductor (MOS) controlled devices and methods of making the same

Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Solvent depression of transition temperature to selectively stimulate actuation of shape memory polymer foams

Boyle, Anthony↗

DOE OSTI2022

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which has enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which create large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot predict the performance of new designs such as for longer wavelength LEDs or for multi-quantum well LEDs. In this work, we show that incorporating low and high indium compositions within quantum wells at the submicrometer scale can provide an accurate prediction of the characteristics of GaN/InGaN light emitting diodes.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Siloxane-functional small molecule acceptor for high-performance organic solar cells with 16.6% efficiency

As one of the simple but most effective molecular design strategies, side-chain engineering has been widely employed to modify the photoelectric properties of active layer materials for boosting the photovoltaic performance of organic solar cells (OSCs). In this work, a functionalized small molecule acceptor (SMA) named BTSi-4F with a bulky siloxane-terminated solubilizing group as side-chains, derived from a classical SMA of Y6, was designed and synthesized. The results demonstrate that the introduction of siloxane-functional terminated groups into SMA not only affects the optical absorption and molecular energy levels, but also regulates the miscibility between the polymer donor and SMA. Compared to the original Y6, BTSi-4F exhibits a better solubility, upshifted lowest unoccupied molecular orbital (LUMO) energy level, more ordered molecular packing, and higher electron-mobility. Matched with a wide bandgap polymer donor PM6, the chlorobenzene-processed OSCs based on PM6:BTSi-4F achieved a superior power conversion efficiency (PCE) of 16.6% with both high open-circuit voltage (V oc ) of 0.90 V and high fill factor (FF) of 0.77, while the devices based on PM6:Y6 obtained a much lower PCE of 13.0% with a V oc of 0.81 V and FF of 0.69 under the same conditions. This work offers a promising molecular design strategy of siloxane-terminated side chain engineering to develop high-performance SMAs for efficient OSCs.

14 SOLAR ENERGY↗