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At least 973 records · Page 54

A Mechanism for Carbon Depletion at Bondline of High-Frequency Electric-Resistance-Welded X70 Pipeline Steel

The bondline of electric-resistance-welded (ERW) linepipe steel, often etched white (i.e., ferrite) in optical microscopy, is generally believed to be carbon depleted. The mechanism for the carbon depletion, however, is not fully understood by researchers. To this end, here we used atom probe tomography (APT) to measure elemental segregation of the as-welded and post-weld heat-treated bondline regions of X70 linepipe welds. The thin vertical features at the bondline in the as-welded condition were identified as carbon-rich martensite-austenite (M-A) constituents, and the majority ferrite phase in the bondline was identified as carbon-depleted ferrite. Following the post-weld normalization, all alloying elements, except Nb and Mo, are homogenized across the bondline and heat-affected zone. The carbon depletion in the ERW bondline was accurately measured. A new mechanism for carbon depletion has been proposed using Scheil calculations of elemental partitioning during weld formation. Segregation of elements in the heat-affected zone was shown to follow the negligible partitioning local equilibrium (NPLE) kinetics for bainite transformation.

36 MATERIALS SCIENCE↗

Templated epitaxy of TiO 2 (B) on a perovskite

The bronze-phase TiO 2 (B) has an open atomic framework that makes it a good candidate for applications in photochemical and electrochemical conversion of energy. However, the synthesis of bronze-phase TiO 2 (B) thin films on perovskite substrates, such as SrTiO 3 (STO), which is one of the most conventional versatile substrates for oxide epitaxy, has been extremely challenging owing to the preferential formation of the anatase TiO 2 over TiO 2 (B). The main reason is that the anatase TiO 2 has not only a smaller lattice mismatch than TiO 2 (B), but also a better structural symmetry match when grown on STO. Here, we demonstrate a way to circumventing this problem by using a VO 2 (B) buffer layer, yielding the growth of a high-quality single crystalline TiO 2 (B) film on a (001)-oriented STO substrate. Finally, from the resulting TiO 2 (B) film, we found that this film has a large optical bandgap of ~3.6 eV, which is close to the known theoretical value, the largest among TiO 2 polymorphs, and useful for developing high-power energy devices.

36 MATERIALS SCIENCE↗

Nanometer-thick ultraflat cantilever resonators

Nanomechanical devices made from ultrathin materials are transforming diverse fields, including sensing, signal processing, and quantum technologies. However, as these materials become thinner, their low bending rigidity poses significant fabrication challenges, and achieving nanometer-thick flat cantilevers with consistent and predictable mechanical responses has remained elusive despite decades of research. Here we present nanometer-thick, ultraflat cantilever resonators fabricated using atomic layer deposition. By effectively mitigating the effects of uncontrollable built-in strain and geometric disorder, the ultraflat nanocantilevers exhibit resonance frequencies closely aligned with thin-plate theory predictions and display low sample-to-sample variability. These cantilevers maintain mechanical stability in both vacuum and air environments, even at large length-to-thickness ratios of up to 3000. The ultraflat nanocantilevers are approaching the thickness limit, beyond which thermal fluctuations at room temperature can spontaneously induce random ripples in otherwise flat films.

nanofabrication↗

Coincidence measurement of the fully differential cross section for atomic-field bremsstrahlung

A coincidence measurement was made of the absolute cross section for electron-atomic-field bremsstrahlung, differential in photon energy, photon-emission angle, and electron scattering angle. The incident electron energy was 140 keV and the scattering materials were thin films of aluminum and gold. The data are compared to the theoretical calculations of Elwert and Haug and of Bethe and Heitler. Both theories give generally satisfactory agreement for aluminum. The Elwert-Haug theory is somewhat more accurate for gold.

Faulk, J. D.↗

The electrospray: Fundamentals and combustion applications

Liquid fuel dispersion in practical systems is typically achieved by spraying the fuel into a polydisperse distribution of droplets evaporating and burning in a turbulent gaseous environment. In view of the nearly unsurmountable difficulties of this two-phase flow, it would be useful to use an experimental arrangement that allow a systematic study of spray evolution and burning in configurations of gradually increasing levels of complexity, starting from laminar sprays to fully turbulent ones. An Electrostatic Spray (ES) of charged droplets lends itself to this type of combustion experiments under well-defined conditions and can be used to synthesize gradually more complex spray environments. In its simplest configuration, a liquid is fed into a small metal tube maintained at several kilovolts relative to a ground electrode few centimeters away. Under the action of the electric field, the liquid meniscus at the outlet of the capillary takes a conical shape, with a thin jet emerging from the cone tip. This jet breaks up farther downstream into a fine spray of charged droplets. Several advantages distinguish the electrospray from alternative atomization techniques: the self-dispersion property of the spray due to coulombic repulsion; the absence of droplet coalescence; the potential control of the trajectories of charged droplets by suitable disposition of electrostatic fields; and the decoupling of atomization, which is strictly electrostatic, from gas flow processes. Furthermore, as recently shown in our laboratory, the electrospray can produce quasi-monodisperse droplets over a very broad size range (1-100 microns). The ultimate objective of this research project is to study the formation and burning of electrosprays of liquid fuels first in laminar regimes and then in turbulent ones. Combustion will eventually be investigated in conditions of three-dimensional droplet-droplet interaction, for which experimental studies have been limited to either qualitative observations in sprays or more quantitative observations on simplified systems consisting of a small number of droplets or droplet arrays. The compactness and potential controllability of this spray generaiton system makes it appealing for studies to be undertaken in the next two years on electrospray combustion in reduced-gravity environments such as those achievable at NASA microgravity test facilities.

Gomez, Alessandro↗

Verification of stability and unraveling the electronic and physical properties of bulk and (001)-surfaces of newly synthesized Ti 2 ZnX (X = C, N) MAX phases

MAX phase family has been extended by the addition of late transition metals at the A-site with the expectation of diverse functional properties. Here, we present our systematic density functional investigation on the thermodynamic and phonon stabilities, elastic properties, including elastic constants, elastic moduli and elastic anisotropy of newly synthesized Ti 2 ZnX (X = C, N) phases in comparison with conventional Ti 2 AlX (X = C, N). Due to the smaller size of N as compared to C, the unit cell dimension is reduced when C atoms are replaced by N atoms at the X-site. Furthermore, the Ti 2 ZnC and Ti 2 ZnN are stable at the equilibrium volume of 110.84 Å 3 and 105.70 Å 3 . The thermodynamic, mechanical and dynamical stabilities are validated by estimating the formation energies, elastic constants and phonon dispersions, respectively. The elastic properties of Ti 2 ZnN are less anisotropic as compared to those of Ti 2 ZnC. To understand the thin-film characteristics in Ti 2 ZnX, the surface properties with (001)-terminated slabs are investigated. Both Ti 2 ZnX bulk and (001)-surfaces exhibit metal-like electronic structures. There is a strong covalent bonding between Ti-X and Ti-Zn atoms confirmed by the charge density map and Mulliken population analysis. Additional states are generated at the Fermi level (EF) due to the unusual d-p states hybridization between Ti and Zn atoms. The anisotropy in chemical bonding is confirmed by the cleavage energy difference between Ti-X and Ti-Zn. Here, Ti(X)-001 and Zn-001 terminations are stable surfaces; however, in terms of chemical potentials, Zn-001 termination is the most favourable in Ti 2 ZnX.

36 MATERIALS SCIENCE↗

Maximal absorption in ultrathin TiN films for microbolometer applications

Ultrathin light absorbers present a viable route toward improving the specific detectivity and response time of microbolometers. However, for an ultrathin film to absorb light efficiently, the dielectric function of the film and its thickness must satisfy strict requirements. Here we experimentally demonstrate an average absorptance of 48% ± 2.5% in the 8–13 μm (769–1250 cm -1 ) spectral range for 10 nm thick titanium nitride (TiN), a value bordering on the 50% fundamental absorptance limit for a suspended thin film. The heat capacity per unit area of this absorber is only 1.2 × 10 -6 J/K/cm 2 , which is beneficial for improving the response time of a microfabricated bolometer. We also show that a sufficient condition for reaching maximal absorption in an ultrathin film is that ε" $\gg$ |ε'|.

36 MATERIALS SCIENCE↗

Viscoelastic characterization of thin-film polymers exposed to low Earth orbit

The materials made available through the Long Duration Exposure Facility (LDEF) satellite provide a set of specimens that can be well characterized and have a known exposure history with reference to atomic oxygen and ultraviolet radiation exposure. Mechanical characteristics measured from control samples and exposed samples provide a data base for predicting the behavior of polymers in low earth orbit. Samples of 1.0 mil thick low density polyethylene were exposed to the low earth orbit environment for a period of six years. These materials were not directly exposed to ram atomic oxygen and offer a unique opportunity for measuring the effect of atomic oxygen and UV radiation on mechanical properties with little concern to the effect of erosion. The viscoelastic characteristics of these materials were measured and compared to the viscoelastic characteristics of control samples. To aid in differentiating the effects of changes in crystallinity resulting from thermal cycling, from the effects of changes in chemical structure resulting from atomic oxygen/UV attack to the polymer, a second set of control specimens, annealed to increase crystallinity, were measured as well. The resulting characterization of these materials will offer insight into the impact of atomic oxygen/UV on the mechanical properties of polymeric materials. The viscoelastic properties measured for the control, annealed, and exposed specimens were the storage and loss modulus as a function of frequency and temperature. From these datum is calculated the viscoelastic master curve derived using the principle of time/temperature superposition. Using the master curve, the relaxation modulus is calculated using the method of Ninomiya and Ferry. The viscoelastic master curve and the stress relaxation modulus provide a direct measure of the changes in the chemical or morphological structure. In addition, the effect of these changes on long-term and short-term mechanical properties is known directly. It should be noted that the dependence on directionality for the polymer films was considered since these films were manufactured by a blown-film process.

Letton, Alan↗

Efficient Free Triplet Generation Follows Singlet Fission in Diketopyrrolopyrrole Polymorphs with Goldilocks Coupling

Microcrystal electron diffraction, grazing incidence wide-angle scattering, and UV–vis spectroscopy were used to determine the unit-cell structure and the relative composition of dimethylated diketopyrrolopyrrole H- and J-polymorphs within thin films subjected to vapor solvent annealing (VSA) for different times. The electronic structure and excited-state deactivation pathways of the different polymorphs were examined by transient absorption spectroscopy, conductive probe atomic force microscopy, and molecular modeling. We find that VSA initially converts amorphous films into mixtures of H- and J-polymorphs and promotes further conversion from H to J with longer VSA times. Here, though both polymorphs exhibit efficient SF to form coupled triplets, free triplet yields are higher in J-polymorph films compared to mixed films because coupling in J-aggregates is lower and, in turn, more favorable for triplet decoupling.

36 MATERIALS SCIENCE↗

Environmentally friendly anti-icing

The present invention describes an aqueous, non-electrolytic, non-toxic, biodegradable, continuous single phase liquid anti-icing or deicing composition for use on the surfaces of, for example, aircraft, airport pavements, roadways, walkways, bridges, entrances, structures, canals, locks, components, vessels, nautical components, railroad switches, and motor vehicles. The anti-icing or deicing composition comprises: (a) water; (b) a non-toxic freezing point depressant selected from the group consisting of monohydric alcohols having from 2 to 6 carbon atoms, polyhydric alcohols having from 3 to 12 carbon atoms, monomethyl or ethyl ethers of polyhydric alcohols having from 3 to 12 atoms or mixtures thereof, wherein the freezing point depressant present is between about 14 to 60 percent by weight; (c) a thickener which is present in between about 0.01 and 10 percent by weight; and (d) optionally a corrosion inhibitor which is present in between about 0.01 and 0.1 percent by weight of the total composition. In one embodiment, the deicing composition further includes (e) a monohydric primary aliphatic unbranched alcohol as a means of forming a thin layer of the composition on the surface of the structure to be given ice protection, and/or as means of forming a homogenized foam with xanthan thickener; which alcohol is selected from the group consisting of alcohols having between 8 to 24 carbon atoms, preferably, 1-dodecanol. Compositions of water, propylene glycol, and/or propanol and xanthan are preferred.

Lockyer, Robert T.↗

Young’s modulus of V 3 O 5 thin films

Vanadium oxide V 3 O 5 exhibits an insulator-to-metal transition (IMT) near 430 K, which is the highest value for all vanadium oxides exhibiting IMTs. This makes it interesting for advanced electronic applications. However, the properties of V 3 O 5 have been little studied, and, in particular, there are no reports of experimentally determined mechanical properties. In this work, Young’s modulus of sputter-deposited V 3 O 5 thin films has been determined by measuring the fundamental resonant frequency of V 3 O 5 -coated silicon microcantilevers using a laser beam deflection technique. After deposition, the films were characterized by x-ray diffraction, resistivity measurements, and atomic force microscopy. The value of Young’s modulus experimentally determined for V 3 O 5 was 198 ± 14 GPa, which is slightly lower than the computationally derived values for bulk crystal V 3 O 5 .

36 MATERIALS SCIENCE↗

Migration Kinetics of Surface Ions in Oxygen-Deficient Perovskite During Topotactic Transitions

Oxygen diffusivity and surface exchange kinetics underpin the ionic, electronic, and catalytic functionalities of complex multivalent oxides. Towards understanding and controlling the kinetics of oxygen transport in emerging technologies, it is highly desirable to reveal the underlying lattice dynamics and ionic activities related to oxygen variation. In this study, the evolution of oxygen content is identified in real-time during the progress of a topotactic phase transition in La 0.7 Sr 0.3 MnO 3-δ epitaxial thin films, both at the surface and throughout the bulk. Using polarized neutron reflectometry, a quantitative depth profile of the oxygen content gradient is achieved, which, alongside atomic-resolution scanning transmission electron microscopy, uniquely reveals the formation of a novel structural phase near the surface. Surface-sensitive X-ray spectroscopies further confirm a significant change of the electronic structure accompanying the transition. The anisotropic features of this novel phase enable a distinct oxygen diffusion pathway in contrast to conventional observation of oxygen motion at moderate temperatures. The results provide insights furthering the design of solid oxygen ion conductors within the framework of topotactic phase transitions.

36 MATERIALS SCIENCE↗

Atomistic modeling of energy band alignment in CdTe(1 0 0) and CdTe(1 1 1) surfaces

An atomic-scale perspective of energy band alignment in CdTe surfaces has not been spatially studied despite the major role surfaces play in forming interfaces within CdTe-based thin film photovoltaic devices. Atomistic modeling based on density functional theory coupled with surface Green’s function is used for calculating energy band alignment of CdTe surfaces. The CdTe(1 0 0) ((1×1) and c(2×2) reconstruction) and CdTe(1 1 1) ((1×1) and (2×2) reconstruction) facets without and with surface relaxation provide insightful band bending characteristics that influence charge carrier transport. Results show that unrelaxed (1×1) CdTe(1 0 0) and CdTe(1 1 1) surfaces bend the valence band downward with surface polarity dictating the surface potential magnitude. The reconstructed CdTe(1 0 0) c(2×2) and CdTe(1 1 1) (2×2) surfaces result in favorable surface electronic features in relation to their unreconstructed variants. In addition, the structurally relaxed CdTe(1 1 1) surfaces develop an internal energy cusp potential that may enhance hole charge transport toward the back of CdTe solar cell devices. In conclusion, energy band alignments calculated within the study lead to a detailed understanding of how CdTe surfaces may affect CdTe-based thin film photovoltaic applications.

36 MATERIALS SCIENCE↗

Temperature dependent interfacial microstructure in HIP-bonded Al6061/Zr joints

Pressing (HIP) at 450 °C and 560 °C under 103 MPa for 90 minutes to evaluate interfacial diffusion and microstructural evolution. Sound metallurgical bonding was achieved at both temperatures, with Zr serving as an effective diffusion barrier. Microstructural analysis revealed the the formation of a (Al,Si)3Zr intermetallic layer at the Al/Zr interface, whose thickness increased from ~100 nm at 450 °C to ~2100 nm at 560 °C, consistent with temperature-driven diffusion kinetics. The thin and continuous reaction layer observed at 450 °C indicates controlled interdiffusion and minimal reaction zone growth, favorable for maintaining interface stability and ductility. At 560 °C, enhanced atomic mobility led to pronounced intermetallic development, confirming diffusion-controlled growth behavior. These results provide valuable insights for optimizing Al/Zr interface design and diffusion barrier performance in advanced structural and energy systems.

Al/Zr interface↗

Superior Piezo-/Ferro-Electricity in Antiferroelectric Ag x NbO 3-δ Thin Films by Nanopillar Local Structure Design

Antiferroelectrics are fundamental mother compounds critical in developing innovative lead-free piezoelectrics and ferroelectrics and hold great promise for wide-ranging applications in energy conversion and electronic devices. However, harnessing their superior properties presents a significant challenge due to the delicate balance required between their various states. Here, in this study, through the unique design of nanopillar structures to alleviate the local polar heterogeneity, we have achieved significantly improved piezo-/ferro-electricity in classic lead-free antiferroelectric Ag x NbO 3-δ (x = 1, 0.9, and 0.8) epitaxial thin films. The effective piezoelectric coefficient reaches 440 pm V –1 , 1 order of magnitude larger than the stoichiometric AgNbO 3 , rivaling classic lead zirconate titanate piezoelectrics. Atomic-scale electron microscopy investigations unravel the underlying mechanisms. The nanopillars, characterized by antisite occupancy of both Ag and Nb atoms and forming out-of-phase boundaries with the matrix, reduce the local crystal symmetry via interphase strain. This leads to the creation of flexible multinanodomain structures that significantly facilitate polarization rotation, thus substantially enhancing the piezoelectric performance. This study demonstrates the feasibility of engineering local heterogeneity through nanopillar design, offering a generally applicable method for property improvement of a wide range of antiferroelectrics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Alternate InP synthesis with aminophosphines: solution–liquid–solid nanowire growth

Indium phosphide nanowires are important components in high-speed electronics and optoelectronics, including photodetectors and photovoltaics. However, most syntheses either use high-temperature and costly vapor-phase methodology or highly toxic and pyrophoric tris(trimethylsilyl)phosphine. To expand on the success of the aminophosphine-based InP colloidal quantum dot synthesis, we developed a synthesis for thin (~11 nm) zinc blende InP nanowires at 180 °C using indium tris(trifluoroacetate) and tris(diethylamino)phosphine. A flat nanoribbon morphology was identified by transmission electron and atomic force microscopy analysis, with the stoichiometric (110) lattice plane exposed. Nanowire growth proceeded through a solution–liquid–solid mechanism from in situ-formed indium metal nanoparticles. Molecular byproducts of tris(oleylamino)phosphine oxide and N-oleyltrifluoroacetamide observed by 31 P and 19 F NMR spectroscopy inform a proposed mechanism of indium reduction by the aminophosphine. Morphological control over the nanowire product was achieved by varying the phosphorus injection to control the aspect ratio, the In : P ratio to toggle between nanowires and multipods, and the pre-hot injection evacuation step to favor a quantum dot product. Furthermore, replacing the indium precursor with indium tris(trifluoromethanesulfonate) was found to make bulk zinc blende InP nanowires with an average diameter of >250 nm and tens of microns in length.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Oxygen vacancy dynamics in monoclinic metallic VO 2 domain structures

It was demonstrated recently that the nano-optical and nanoelectronic properties of VO 2 can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal–insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifetimes of sub-100 nm domain structures. This information is imperative for the development of oxide nanoelectronics through defect manipulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy

We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (~1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. The indium surfactant was expected to help with the adatom mobility and, thus, provide smoother growth surfaces. Through a combination of varying V/III ratios, In flux, and growth temperatures, an optimal condition for surface morphology, characterized by atomic force microscopy, was achieved. At higher Ga fluxes for fast growth rates (~1 µm/h and beam equivalent pressures of ~5 × 10 –7 Torr), higher ammonia flows were necessary to preserve the surface morphology. In addition, indium was an effective surfactant—reducing the roughness and improving the overall surface morphology. However, excessive indium causes the surface morphology to degrade, potentially due to the enhancement of the Ga desorption from the surface as a result of the reaction of indium with ammonia for high indium fluxes. The indium surfactant also resulted in a reduction of background Si impurity concentrations in the film. These effects allow for the growth of thick drift layers with low background dopant concentrations for vertical GaN power devices.

36 MATERIALS SCIENCE↗