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At least 973 records · Page 54

Origin of large variations of current on/off ratio and switching voltage in atomically thin memristors: an exascale ab initio transport study

Nonvolatile resistive switching in two-dimensional monolayers opens a new avenue for high-density memory/computing devices. However, questions remain as to why the current on/off ratio and switching voltage vary significantly among different devices. Here, we simulate electronic transport of large systems consisting of a h-BN monolayer sandwiched by gold electrodes, enabled by an implementation of the nonequilibrium Green’s function method in the exascale density functional theory (DFT) code: Real-space MultiGrid. Systematic calculations reveal that the wide range of on/off ratios is due to variations in interface distances between the electrode and h-BN that significantly modulate their wavefunction overlap. In addition, DFT calculations demonstrate that the energy barrier of a gold atom dissociating from the electrode to h-BN increases dramatically with the interface distance, thereby explaining the strong dependence of the switching voltage on distance. Our work demonstrates the significance of interface distance in governing the current on/off ratio and switching voltage.

Electronic devices↗

MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. But, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. We designed devices with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.

14 SOLAR ENERGY↗

Oxidatively stable fluorinated sulfone electrolytes for high voltage high energy lithium-ion batteries

New fluorinated sulfones were synthesized and evaluated in high voltage lithium-ion batteries using LiNi 0.5 Mn 1.5 O 4 (LNMO) cathode. Fluorinated sulfones with an α-trifluoromethyl group exhibit enhanced oxidation stability, reduced viscosity and superior separator wettability as compared to their non-fluorinated counterparts. Finally, the improved performance in high voltage cells makes it a promising high voltage electrolyte for 5-V lithium-ion chemistry.

25 ENERGY STORAGE↗

A Separation Voltage Polarity Switching Method for Higher Sample Loading Capacity and Better Separation Resolution in Transient Capillary Isotachophoresis Separation

A separation voltage polarity switching transient capillary isotachophoresis (PS-tCITP) was developed to overcome a major sample loading volume limitation in transient capillary isotachophoresis (tCITP). The fundamental idea of PS-tCITP is to let sample ions move back and forth in the separation capillary during their initial isotachophoresis focusing stage by switching the polarity of separation voltage, in order to both increase the sample loading volume and improve the separation efficiency as compared to the conventional tCITP method. The experimental evaluation of the novel PS-tCITP method by using two peptide standards at 2 µM concentration showed that the maximum sample loading volume could be increased from 45% of the total separation capillary volume in tCITP to 70% in PS-tCITP, which resulted in a more than 1.5 fold increases in the peptide peak intensity at a given length/volume of the separation capillary. Due to the consecutive focusing of sample volume from each polarity switching of separation voltage, the separation time window at a given sample loading volume was also increased significantly in PS-tCITP as compared to tCITP. Experiment comparison between tCITP and PS-tCITP at 45% sample loading volume using the same setup showed that the migration time difference between the two peptide peaks increased from 0.3 min in tCITP to 0.363 min in PS-tCITP with similar peak widths and heights, resulting in roughly a 21% improvement in separation resolution. The performance advantages of PS-tCITP separation over tCITP separation was further verified by using a mixture of six peptide standards.

Wu, Huanming↗

A higher voltage Fe( II ) bipyridine complex for non-aqueous redox flow batteries

Non-aqueous redox flow batteries (RFBs) offer the possibility of higher voltage and a wider working temperature range than their aqueous counterpart. In this study, we optimize the established 2.26 V Fe(bpy) 3 (BF 4 ) 2 /Ni(bpy) 3 (BF 4 ) 2 asymmetric RFB to lessen capacity fade and improve energy efficiency over 20 cycles. We also prepared a family of substituted Fe(bpyR) 3 (BF 4 ) 2 complexes (R = –CF 3 , –CO 2 Me, –Br, –H, – t Bu, –Me, –OMe, –NH 2 ) to potentially achieve a higher voltage RFB by systematically tuning the redox potential of Fe(bpyR) 3 (BF 4 ) 2 , from 0.94 V vs. Ag/AgCl for R = OMe to 1.65 V vs. Ag/AgCl for R = CF 3 (ΔV = 0.7 V). A series of electronically diverse symmetric and asymmetric RFBs were compared and contrasted to study electroactive species stability and efficiency, in which the unsubstituted Fe(bpy) 3 (BF 4 ) 2 exhibited the highest stability as a catholyte in both symmetric and asymmetric cells with voltage and coulombic efficiencies of 94.0% and 96.5%, and 90.7% and 80.7%, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Voltage bias stress effects in metal halide perovskites are strongly dependent on morphology and ion migration pathways

The solar-to-power power conversion efficiencies (PCEs) of metal halide perovskites (MHP) have improved over the last decade using a wide variety of methods, including composition manipulation, dopant introduction, and interfacial buffers. These methods, however, have taken little regard for the electronic and interfacial effects such alterations may cause within devices under voltage bias stress – a condition required for most device operation. We investigate how halide and cation substitution in MHP structures [specifically, CH 3 NH 3 PbI 2.87 Cl 0.13 and Cs 0.1 (MA 0.17 FA 0.83 ) 0.9 Pb(I 0.83 Br 0.17 ) 3 ] effects the current behavior of devices while under a range of voltage bias stress in both light and dark conditions. Additionally, conducting in depth investigations into the electronic and morphological differences between these two MHP devices, we confirmed their unique voltage bias stress effects are due to intrinsic behavior within the perovskite structure. Importantly, we also determined how crystallite orientation can influence ion migration and therefore alter charge transport and current stability in MHP photovoltaic devices.

36 MATERIALS SCIENCE↗

Over 31% efficient indoor organic photovoltaics enabled by simultaneously reduced trap-assisted recombination and non-radiative recombination voltage loss

Indoor organic photovoltaics (OPVs) have shown great potential application in driving low-energy-consumption electronics for the Internet of Things. There is still great room for further improving the power conversion efficiency (PCE) of indoor OPVs, considering that the desired morphology of the active layer to reduce trap-assisted recombination and voltage losses and thus simultaneously enhance the fill factor (FF) and open-circuit voltage for efficient indoor OPVs remains obscure. Herein, by optimizing the bulk and interface morphology via a layer-by-layer (LBL) processing strategy, low leakage current and low non-radiative recombination loss can be synergistically achieved in PM6:Y6-O based devices. Detailed characterizations reveal the stronger crystallinity, purer domains and ideal interfacial contacts in the LBL devices compared to their bulk-heterojunction (BHJ) counterparts. The optimized morphology yields a reduced voltage loss and an impressive FF of 81.5%, and thus contributes to a high PCE of 31.2% under a 1000 lux light-emitting diode (LED) illumination in the LBL devices, which is the best reported efficiency for indoor OPVs. Additionally, this LBL strategy exhibits great universality in promoting the performance of indoor OPVs, as exemplified by three other non-fullerene acceptor systems. Finally, this work provides guidelines for morphology optimization and synergistically promotes the fast development of efficient indoor OPVs.

36 MATERIALS SCIENCE↗

Oxygen redox activities governing high-voltage charging reversibility of Ni-rich layered cathodes

A schematic illustration indicative of the improved structural reversibility through stabilizing oxidized oxygen by Al doping. The chemical reactions and phase transitions at high voltages are generally considered to determine the electrochemical properties of high-voltage layered cathodes such as Ni-rich rhombohedral oxides. Even if significantly higher SOCs (states-of-charge) are utilized above the capability of transition metal redox (primarily Ni and Co), the effect of oxygen redox on Ni-rich rhombohedral oxides still looks mysterious thereby necessitating research that can clarify the relationship between redox reactions and phase transitions. Here, we performed a comprehensive and comparative study of the cationic and anionic redox reactions, as well as the structural evolution of a series of commercial Ni-rich layered oxides with and without Al doping. We combined the results from X-ray spectroscopy, operando electrochemical mass spectrometry, and neutron diffraction with electrochemical properties and thereby revealed the different oxygen redox activities associated with structural and electrochemical degradations. We reveal that Al doping suppresses the irreversible oxygen release but enhances the lattice oxygen oxidization. With this modulated oxygen redox activity, the Ni-rich layered oxides’ notorious H2–H3 structural phase transition becomes highly reversible. Our findings disentangle the different oxygen redox activities during high-voltage cycling and clarify the role of dopants in the Ni-rich layered oxides in terms of structural and electrochemical stability, shedding light on the future direction of optimizing layered cathode materials for safer high energy-density secondary batteries.

Lee, Gi-Hyeok↗

Decoupling the capacity fade contributions in polymer electrolyte-based high-voltage solid-state batteries

Polymer electrolyte (PE)-based solid-state batteries (PE-SSBs) made with high-voltage cathodes are known to suffer from severe capacity fade, stemming primarily from the poor oxidative stability of most PEs under high-voltage cycling conditions. PEs also suffer from greater ion-transport limitations compared to liquid or solid electrolytes. However, often, these limitations are collectively stated to be responsible for the observed capacity fade, and it is challenging to decouple the contributions of different factors. Herein, a tunable cell fabrication platform was developed to systematically investigate and decouple the two primary capacity fade drivers (cell impedance growth and kinetic limitations), while keeping the other cell parameters constant. Three PE types with distinct transport characteristics were compared. By utilizing a voltage profile analysis method, the contribution of the cell's internal impedance growth was quantitatively decoupled from the kinetic limitations stemming from the high concentration gradient in the polymer catholyte and slow charge transfer reactions. We demonstrate that the high interfacial impedance did not necessarily correlate with the high capacity fade rate. Kinetic limitations that are not reflected by impedance measurements can play a dominant role in causing cumulative capacity decay.

Ock, Ji-young [Oak Ridge National Laboratory (ORNL↗

Development of high-voltage pulse-slicer unit with variable pulse duration for pulse radiolysis system

A high-voltage pulse-slicer unit with variable pulse duration has been developed and integrated with a 7 MeV linear electron accelerator (LINAC) for pulse radiolysis investigation. The pulse-slicer unit provides switching voltage from 1 kV to 10 kV with rise time better than 5 ns. Two MOSFET based 10 kV switches were configured in differential mode to get variable duration pulses. The high-voltage pulse has been applied to the deflecting plates of the LINAC for slicing of electron beam of 2 {mu}s duration. The duration of the electron beam has been varied from 30 ns to 2 {mu}s with the optimized pulse amplitude of 7 kV to get corresponding radiation doses from 6 Gy to 167 Gy.

43 PARTICLE ACCELERATORS↗

Electron emission mechanism during the nanosecond high-voltage pulsed discharge in pressurized air

A comparison between the results of x-ray absorption spectroscopy of runaway electrons (RAEs) generated during nanosecond timescale high-voltage (HV) gas discharge and the simulated attenuation of the x-ray flux produced by the runaway electron spectrum calculated using particle-in-cell numerical modeling of such a type of discharge is presented. The particle-in-cell simulation considered the field and explosive emissions (EEs) of the electrons from the cathode. It is shown that the field emission is the dominant emission mechanism for the short-duration (<2.5 ns) high-voltage pulses, while for the long-duration (>5 ns) high-voltage pulses, the explosive emission is likely to play a significant role.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Radio frequency cavity analysis, measurement, and calibration of absolute Dee voltage for K-500 superconducting cyclotron at VECC, Kolkata

Variable Energy Cyclotron Centre has commissioned a K-500 superconducting cyclotron for various types of nuclear physics experiments. The 3-phase radio-frequency system of superconducting cyclotron has been developed in the frequency range 9-27 MHz with amplitude and phase stability of 100 ppm and {+-}0.2{sup 0}, respectively. The analysis of the RF cavity has been carried out using 3D Computer Simulation Technology (CST) Microwave Studio code and various RF parameters and accelerating voltages ('Dee' voltage) are calculated from simulation. During the RF system commissioning, measurement of different RF parameters has been done and absolute Dee voltage has been calibrated using a CdTe X-ray detector along with its accessories and known X-ray source. The present paper discusses about the measured data and the simulation result.

43 PARTICLE ACCELERATORS↗

Development of a quantum-voltage-calibrated noise thermometer at NIM

A quantum-voltage-calibrated Johnson-noise thermometer was developed at NIM, which measures the Boltzmann constant k by comparing the thermal noise across a 100 Ω sense resistor at the temperature of the triple point of water with the pseudo-random frequency-comb voltage waveform synthesized with a bipolar-pulse-driven quantum-voltage-noise source. A measurement with integration period of 10 hours and bandwidth of 640 kHz resulted in a relative offset of 0.5×10{sup −6} from the current CODATA value of k, and a type A relative standard uncertainty of 23×10{sup −6}. Benefiting from closely matched noise powers and transmission-line impedances and small nonlinearities in the cross-correlation electronics, the derived k shows self-consistent values and standard uncertainties for different measurement bandwidths.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Design and validation of a high-voltage levitation circuit for electrostatic accelerometers

A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup −8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order of magnitude lower.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Polymer defect states modulate open-circuit voltage in bulk-heterojunction solar cells

Defect states influence the operation of organic solar cells altering transport, recombination, and energetic mechanisms. This work investigates how processing conditions induce morphology-related, electrically active defects in the donor polymer of bulk-heterojunction solar cells. Structural order is inferred from absorption and X-ray diffraction data, while defect density is determined from capacitance methods. A correlation is observed between the polymer nanocrystallite size, the defect concentration, and the output voltage. For the case of poly(3-hexylthiophene), processing that promote crystallinity is beneficial for the device performance as it decreases the defect density (energy disorder) that finally enlarges the maximum achievable open-circuit voltage. Defect states within the effective bandgap modulate the downshift of the hole Fermi level upon illumination that in turn establishes the achievable open-circuit voltage.

36 MATERIALS SCIENCE↗

High voltage stability performance of a gamma ray detection device

An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗