Design of low-noise transistor switch capable of meeting military EMI specifications.
Low noise transistor switch design capable of switching 1A and meeting military current probe EMI specifications
SWITCHING CIRCUIT↗
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Results for “Transistors”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Transferred substrate heterojunction bipolar transistors for submillimeter wave applications
We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.
heterojunction bipolar transistor InP submillimete↗
Transferred substrate heterojunction bipolar transistors for millimeter and submillimeter wave applications
We report on our effort to develop the world's fastest transistor with the ultimate goal of utilizing them in electronic devices for advancing the present state of RF electronic systems.
InP HBT rf transistor III-V compound semiconductor↗
Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor
This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.
electrical properties transistors↗
Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron Transistor
We have demonstrated a bound to continuum state GaAs/AlxGa1-xAs infrared hot electron transistor which has a peak response at (sub =16.3). This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1-xAs barrier between the base and the collector as an energy discriminating filter.
infrared hot electron transistor photosensitive em↗
Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz
We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz.
transistors↗
Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications
Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.
large-area electronics↗
Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors
The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.
thermal cycling tests↗
Total Ionizing Dose Test Report BFR92A NPN 5 GHz Wide Band Transistor from NXP
The purpose of this test was to characterize the Philips/NXP BFR92A NPN 5 gigahertz wide band silicon transistor for total dose response. This test shall serves as the radiation lot acceptance test (RLAT) for the lot date code (LDC) 1027. The BFR92A is packaged in a 3-pin plastic SOT23 package. Low dose rate (LDR/ELDRS) irradiations was performed.
Total Ionizing Dose (TID)↗
U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization Report
The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.
Total Ionizing Dose (TID)↗
A Highly Crystalline Fused‐Ring n‐Type Small Molecule for Non‐Fullerene Acceptor Based Organic Solar Cells and Field‐Effect Transistors
Abstract N‐type organic small molecules (SMs) are attracting attention in the organic electronics field, due to their easy purification procedures with high yield. However, only a few reports show SMs that perform well in both organic field‐effect transistors (OFETs) and organic solar cells (OSCs). Here, the synthesis and characterization of an n‐type small molecule with an indacenodithieno[3,2‐b]thiophene (IDTT) core unit and linear alkylated side chain (C 16 ) (IDTTIC) are reported. Compared to the state‐of‐the‐art n‐type molecule IDTIC, IDTTIC exhibits smaller optical bandgap and higher absorption coefficient, which is due to the enhanced intramolecular effect. After mixing with the polymer donor PBDB‐T, IDTIC‐based solar cells deliver a power conversion efficiency of only 5.67%. In stark contrast, the OSC performance of IDTTIC improves significantly to 11.2%. It is found that the superior photovoltaic properties of PBDB‐T:IDTTIC blends are mainly due to reduced trap‐assisted recombination and enhanced molecular packing coherence length and higher domain purity when compared to IDTIC. Moreover, a significantly higher electron mobility of 0.50 cm 2 V −1 s −1 for IDTTIC in OFET devices than for IDTIC (0.15 cm 2 V −1 s −1 ) is obtained. These superior performances in OSCs and OFETs demonstrate that SMs with extended π‐conjugation of the backbone possess a great potential for application in organic electronic devices.
Song, Xin↗
Balancing Ionic and Electronic Conduction for High‐Performance Organic Electrochemical Transistors
Abstract Conjugated polymers that support mixed (electronic and ionic) conduction are in demand for applications spanning from bioelectronics to energy harvesting and storage. To design polymer mixed conductors for high‐performance electrochemical devices, relationships between the chemical structure, charge transport, and morphology must be established. A polymer series bearing the same p‐type conjugated backbone with increasing percentage of hydrophilic, ethylene glycol side chains is synthesized, and their performance in aqueous electrolyte gated organic electrochemical transistors (OECTs) is studied. By using device physics principles and electrochemical analyses, a direct relationship is found between the OECT performance and the balanced mixed conduction. While hydrophilic side chains are required to facilitate ion transport—thus enabling OECT operation—swelling of the polymer is not de facto beneficial for balancing mixed conduction. It is shown that heterogeneous water uptake disrupts the electronic conductivity of the film, leading to OECTs with lower transconductance and slower response times. The combination of in situ electrochemical and structural techniques shown here contributes to the establishment of the structure–property relations necessary to improve the performance of polymer mixed conductors and subsequently of OECTs.
Savva, Achilleas↗
Face‐on Orientation Matches Vertical Organic Electrochemical Transistors for High Transconductance and Superior Non‐Volatility
Abstract The recently developed vertical structure of organic electrochemical transistors (OECTs) can integrate volatile and non‐volatile functions into one reconfigurable device, making it highly promising. However, comparing with the conventional planar OECT (c‐OECT), the understanding of vertical OECT (v‐OECT) working principles and device engineering strategies is still lacking, impeding rational optimization. Since a major difference between c‐ and v‐OECTs is their charge transport directionality, which is highly influenced by crystallite orientations, the orientation–device structure match thus becomes an important yet outstanding topic for OECTs. Herein, using ann‐type small molecule IDIC‐MEG, investigate how much impact such match can have on OECT performance. The IDIC‐MEG c‐OECT fails to work due to the seriously hindered in‐plane electron transport by face‐on orientation. Surprisingly, simply changing the device structure from planar to vertical allows the resultant v‐OECT to exhibit the highest reported transconductance (46.3 mS) among all small‐molecule OECTs, thanks to the match between face‐on orientation and the vertical structure. Such match also leads to excellent non‐volatility, including highly predictable programmability and good operational stability. This work, for the first time, explicitly demonstrates the significance of orientation–device structure match for OECT optimization, establishing new guidelines for achieving high‐performance volatile and non‐volatile OECTs.
Chemistry↗
Fast Deposition of Aligning Edge‐On Polymers for High‐Mobility Ambipolar Transistors
Abstract Fast deposition of aligning ambipolar polymers for high‐performance organic field‐effect transistors (OFETs) and inverter circuits are highly desired for both scientific studies and industry applications. Here, large‐area and ordered polymer films are prepared by a bar‐coating method at a rate of 120 mm s −1 in air. Atomic force microscopy and grazing‐incidence wide‐angle X‐ray scattering analysis indicate uniform edge‐on poly(fluoroisoindigo‐difluorobithiophene‐fluoroisoindigo‐bithiophene) (PFIBI‐BT) in 11.7 ± 1 nm film (≈5 layers). The elongated, uniformly oriented grains can reduce the adverse effects of the grain boundaries and facilitate charge transport in polymers. Furthermore, OFETs based on parallel film show high hole/electron mobilities up to 5.5/4.5 cm 2 V −1 s −1 , which are approximately nine times of the devices prepared by spin‐coating. The gain of the inverter is as high as 174, which is one of the highest values in polymer inventers currently. These results demonstrate that the excellent bipolar performance of few‐layer PFIBI‐BT can be ensured while achieving the compatibility of the experimental process with industrial preparation.
Jiang, Yingying↗
Enhancement‐Mode PEDOT:PSS Organic Electrochemical Transistors Using Molecular De‐Doping
Abstract Organic electrochemical transistors (OECTs) show great promise for flexible, low‐cost, and low‐voltage sensors for aqueous solutions. The majority of OECT devices are made using the polymer blend poly(ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), in which PEDOT is intrinsically doped due to inclusion of PSS. Because of this intrinsic doping, PEDOT:PSS OECTs generally operate in depletion mode, which results in a higher power consumption and limits stability. Here, a straightforward method to de‐dope PEDOT:PSS using commercially available amine‐based molecular de‐dopants to achieve stable enhancement‐mode OECTs is presented. The enhancement‐mode OECTs show mobilities near that of pristine PEDOT:PSS (≈2 cm 2 V −1 s −1 ) with stable operation over 1000 on/off cycles. The electron and proton exchange among PEDOT, PSS, and the molecular de‐dopants are characterized to reveal the underlying chemical mechanism of the threshold voltage shift to negative voltages. Finally, the effect of the de‐doping on the microstructure of the spin‐cast PEDOT:PSS films is investigated.
Keene, Scott T.↗
All‐Polymer Bulk‐Heterojunction Organic Electrochemical Transistors with Balanced Ionic and Electronic Transport
Abstract The rapid development of organic electrochemical transistor (OECTs)‐based circuits brings new opportunities for next‐generation integrated bioelectronics. The all‐polymer bulk‐heterojunction (BHJ) offers an attractive, inexpensive alternative to achieve efficient ambipolar OECTs, and building blocks of logic circuits constructed from them, but have not been investigated to date. Here, the first all‐polymer BHJ‐based OECTs are reported, consisting of a blend of new p‐type ladder conjugated polymer and a state‐of‐the‐art n‐type ladder polymer. The whole ladder‐type polymer BHJ also proves that side chains are not necessary for good ion transport. Instead, the polymer nanostructures play a critical role in the ion penetration and transportation and thus in the device performance. It also provides a facile strategy and simplifies the fabrication process, forgoing the need to pattern multiple active layers. In addition, the development of complementary metal–oxide–semiconductor (CMOS)‐like OECTs allows the pursuit of advanced functional logic circuitry, including inverters and NAND gates, as well as for amplifying electrophysiology signals. This work opens a new approach to the design of new materials for OECTs and will contribute to the development of organic heterojunctions for ambipolar OECTs toward high‐performing logic circuits.
Chemistry↗
Semiconducting Small Molecules as Active Materials for p-Type Accumulation Mode Organic Electrochemical Transistors
A series of semiconducting small molecules with bithiophene or bis-3,4-ethylenedioxythiophene cores are designed and synthesized. The molecules display stable reversible oxidation in solution and can be reversibly oxidized in the solid state with aqueous electrolyte when functionalized with polar triethylene glycol side chains. Evidence of promising ion injection properties observed with cyclic voltammetry is complemented by strong electrochromism probed by spectroelectrochemistry. Blending these molecules with high molecular weight polyethylene oxide (PEO) is found to improve both ion injection and thin film stability. The molecules and their corresponding PEO blends are investigated as active layers in organic electrochemical transistors (OECTs). For the most promising molecule:polymer blend (P4E4:PEO), p-type accumulation mode OECTs with µA drain currents, μS peak transconductances, and a µC* figure-of-merit value of 0.81 F V -1 cm -1 s -1 are obtained.
36 MATERIALS SCIENCE↗
Improving Charge Transport and Environmental Stability of Carbohydrate-Bearing Semiconducting Polymers in Organic Field-Effect Transistors
Semiconducting polymers offer synthetic tunability, good mechanical properties, and biocompatibility, enabling the development of soft technologies previously inaccessible. Side-chain engineering is a versatile approach for optimizing these semiconducting materials, but minor modifications can significantly impact material properties and device performance. Carbohydrate side chains have been previously introduced to improve the solubility of semiconducting polymers in greener solvents. Despite this achievement, these materials exhibit suboptimal performance and stability in field-effect transistors. In this work, structure–property relationships are explored to enhance the device performance of carbohydrate-bearing semiconducting polymers. Toward this objective, a series of isoindigo-based polymers with carbohydrate side chains of varied carbon-spacer lengths is developed. Material and device characterizations reveal the effects of side chain composition on solid-state packing and device performance. With this new design, charge mobility is improved by up to three orders of magnitude compared to the previous studies. Processing–property relationships are also established by modulating annealing conditions and evaluating device stability upon air exposure. Notably, incidental oxygen-doping effects lead to increased charge mobility after 10 days of exposure to ambient air, correlated with decreased contact resistance. Bias stress stability is also evaluated. This work highlights the importance of understanding structure–property relationships toward the optimization of device performance
36 MATERIALS SCIENCE↗