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At least 973 records · Page 54

Plasmon-enhanced ultralow-threshold solid-state triplet fusion upconversion

Triplet fusion upconversion has potential applications in solar cells, photoredox catalysis, additive manufacturing and bioimaging. However, solid-state upconversion systems have struggled to measure up to their solution-phase counterparts, often requiring enormous optical power densities to operate at the maximum efficiency. Here we substantially improve the performance of upconversion films through excitation with surface plasmons that propagate along a planar silver-film interface, leading to an absorption enhancement that reduces the intensity threshold I th by a factor of 19 and enhances the external quantum efficiency by a factor of 17. From this, we achieve I th values as low as 3.4 mW cm −2 and an external quantum efficiency up to 0.094%. To demonstrate real-world viability, we couple the upconversion film to plasmons generated by the near-field of excitons in an organic light-emitting diode. As a result, this scheme is then used to fabricate a white-emitting organic light-emitting diode where blue emission sources from plasmon-excited upconversion, achieving a high colour rendering index of 86.2 and setting precedent for blue emission in the absence of high-energy polarons or triplets.

36 MATERIALS SCIENCE↗

Selective heterogeneous capture and release of actinides using carborane-functionalized electrodes

Here we report the heterogenization of molecular, electrochemically switchable ortho-substituted carboranes ( PO Cb, PO Cb-Pyr) for selective metal capture. Films of PO Cb and PO Cb-Pyr on glassy carbon and carbon fiber (CF) electrodes demonstrated heterogeneous electrochemical behaviour that was enhanced by the inclusion of single-walled carbon nanotubes (CNTs). Galvanostatically charged CF|CNT| PO Cb and CF|CNT| PO Cb-Pyr electrodes selectively captured and released actinides (Th 4+ , UO 2 2+ ) from mixed solutions containing alkali (Cs + ), lanthanide (Nd 3+ , Sm 3+ ) and actinide (Th 4+ , UO 2 2+ ) metal ions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The balance of orbital overlap and orbital energy in the activation of methane by actinide cations: insights from inductively coupled plasma tandem mass spectrometry

The actinides present a unique challenge to chemical theory. The classical view of covalent bonding is driven by the extent of spatial overlap of valence orbitals. Modern theory has expanded assessments of covalency to include considerations of orbital energy degeneracy to assess orbital energy mixing between metal and ligand valence orbitals. Actinide–ligand (An–L) bonding has more recently been described as a balance between orbital overlap and orbital energy mixing, where 5f and L valence orbital overlap decreases while energy mixing between An 5f and L valence orbitals increases across the series. To test these existing views, we employed inductively coupled plasma tandem mass spectrometry to examine the kinetic energy dependences of reactions of actinide cations, Th + –Am + , with methane. Further, this is the first experimental report of the energy dependences of methane activation reactions involving the cations of Pa, Np, Pu, and Am and the first experimental determination of transuranic An + –D, An + –CD 2 , An + –CD 3 , and An + –CD bond dissociation energies. The correlation of the measured An + –CD 2 bond energies with E p (6d 2 ) indicates that An + 6d orbitals are the dominant contributors in the An + –CD 2 bonds. Close examination of the relative reactivities of An + offers additional support that the balance of classical and modern views of molecular bonding may lie between Np + and Pu + and that the increased reactivity of Th + –Np + may be attributed to the increased spatial extension of the 5f orbitals whereas covalent An + bond formation may be more driven by the decreasing energies of the 5f orbitals across the actinide series.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Uranium particle age dating, aggregation, and model age best estimators

We present important aspects of uranium particle age dating by Large-Geometry Secondary Ion Mass Spectrometry (LG-SIMS) that can introduce bias and increase model age uncertainties, especially for small, young, and/or low-enriched particles. This metrology is important for applications related to International Nuclear Safeguards. We explore influential factors related to model age estimation, including the effects of evolving surface chemistry on inter-element measurements of particles (e.g., Th and U), detector background, and aggregation methods using simulated and actual particle samples. We introduce a new model age estimator, called “mid68”, that supplements 95% confidence intervals, providing a “best estimate” and uncertainty about the most likely age. The mid68 estimator can be calculated using the Feldman and Cousins method or Bayesian methods and provides a value with a symmetric uncertainty that can be used for calculations and approximate aggregation of processed model age values when the raw data and correction factors are not available. For particles yielding low 230 Th counts amidst nonzero detector background, their underlying model age probability distributions are asymmetric, so the mid68 estimator provides additional robust information regarding the underlying model age likelihood. This study provides a comprehensive and timely examination of critical aspects of uranium particle age dating as more laboratories establish particle chronometry capabilities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tri-gate GaN junction HEMT

This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate JHEMT differs from all existing GaN FinFETs and tri-gate HEMTs, as they employ a Schottky or a metal-insulator-semiconductor (MIS) gate stack. A tri-gate GaN JHEMT is fabricated using p-type NiO with the gate metal forming an Ohmic contact to NiO. The device shows minimal hysteresis and a subthreshold slope of 63 ± 2 mV/decade with an on-off current ratio of 10 8 . Compared to the tri-gate MISHEMTs fabricated on the same wafer, the tri-gate JHEMTs exhibit higher threshold voltage (V TH ) and achieve positive V TH without the need for additional AlGaN recess. In addition, this tri-gate JHEMT with a fin width of 60 nm achieves a breakdown voltage (BV) > 1500 V (defined at the drain current of 1 μA/mm at zero gate bias) and maintains the high BV with the fin length scaled down to 200 nm. In comparison, the tri-gate MISHEMTs with narrower and longer fins show punch-through at high voltages. Moreover, when compared to planar enhancement mode HEMTs, tri-gate JHEMTs show significantly lower channel sheet resistance in the gate region. Finally, these results illustrate a stronger channel depletion and electrostatic control in the junction tri-gate compared to the MIS tri-gate and suggest great promise of the tri-gate GaN JHEMTs for both high-voltage power and low-voltage power/digital applications.

36 MATERIALS SCIENCE↗

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10 3 , and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

74 ATOMIC AND MOLECULAR PHYSICS↗

Ultrahigh-pressure disordered eight-coordinated phase of Mg 2 GeO 4 : Analogue for super-Earth mantles

Mg 2 GeO 4 is important as an analog for the ultrahigh-pressure behavior of Mg 2 SiO 4 , a major component of planetary interiors. In this study, we have investigated magnesium germanate to 275 GPa and over 2,000 K using a laser-heated diamond anvil cell combined with in situ synchrotron X-ray diffraction and density functional theory (DFT) computations. The experimental results are consistent with the formation of a phase with disordered Mg and Ge, in which germanium adopts eightfold coordination with oxygen: the cubic, Th 3 P 4 -type structure. DFT computations suggest partial Mg-Ge order, resulting in a tetragonal $I\bar{4}2d$ structure indistinguishable from $I\bar{4}3d$ Th 3 P 4 in our experiments. If applicable to silicates, the formation of this highly coordinated and intrinsically disordered phase may have important implications for the interior mineralogy of large, rocky extrasolar planets.

58 GEOSCIENCES↗

Laser resonance ionization spectroscopy of thorium

High-lying Rydberg and autoionizing (AI) states of thorium (Th) have been studied via resonance laser ionization spectroscopy at both TRIUMF Canada’s particle accelerator center and Oak Ridge National Lab (ORNL). Multiple Rydberg series converging to the ionization potential (IP) were observed via different stepwise laser excitation schemes and were assigned to be the 6d 2 7s ( 4 F 3/2 ) np, nd, and nf series. Analysis of these series enabled the determination of the IP to be 50 868.735(54) cm −1 , which improved the precision by two orders of magnitude over the current adopted NIST value of 50 867(2) cm −1 . Additionally, four AI Rydberg series were identified and assigned to nf and nd series converging to the 6d 2 7s 4 F 5/2 and 6d7s 2 2 D 3/2 metastable states of Th + . In conclusion, the measured energies of the Rydberg and AI Rydberg states are reported, and observed perturbations within the series are discussed.

Rydberg series↗

Near-surface modification of defective KTaO 3 by ionizing ion irradiation

The synergistic effect of nuclear (S n ) and electronic (S e ) energy loss observed in some ABO 3 perovskites has attracted considerable attention due to the real possibility to modify various near-surface properties, such as the electronic and optical properties, by patterning ion tracks in the defective near-surface regions. In this study, we show that low-energy ion-induced disordering in conjunction with ionizing ion irradiation (18 MeV Si, 21 MeV Ni and 91.6 MeV Xe) is a promising approach for tailoring ion tracks in the near-surface of defective KTaO 3 . Experimental characterization and computer simulations reveal that the size of these latent ion tracks increases with S e and level of pre-existing damage. These results further reveal that the threshold S e value (S e th ) for track creation increases with decreasing pre-damage level. The values of S e th increase from 5.02 keV nm -1 , for a pre-existing fractional disorder of 0.53 in KTaO 3 , to 10.81 keV nm -1 for pristine KTaO 3 . Above these thresholds, amorphous latent tracks are produced due local melting and rapid quenching. Below a disorder fraction of 0.08 and S e ≤ 6.68 keV nm -1 , the synergistic effect is not active, and damage accumulation is suppressed due to a competing ionization-induced damage annealing process. These results indicate that, depending on S e and the amount of pre-existing damage, highly ionizing ions can either enhance or suppress damage accumulation in KTaO 3 , thus providing a pathway to tailoring defects states. Comprehending the conflicting roles of highly ionizing ions in defective ABO 3 oxides is vital for understanding and predictive modeling of ion-solid interactions in complex oxides, as well as for achieving control over ion track size in the near-surface of defective KTaO 3 .

36 MATERIALS SCIENCE↗

Isotope mass scaling and transport comparison between JET Deuterium and Tritium L-mode plasmas

The dimensionless isotope mass scaling experiment between pure Deuterium and pure Tritium plasmas with matched $\rho^*$, $\nu^*$ , β n , q and $T_e/T_i$ has been achieved in JET L-mode with dominant electron heating (NBI+ohmic) conditions. 28% higher scaled energy confinement time $B_t\tau_{E,\mathrm{th}}/A$ is found in favour of the Tritium plasma. This can be cast in the form of the dimensionless energy confinement scaling law as $\Omega_i \tau_{E,\mathrm{th}} \sim A^{0.48 \pm 0.16}$. This significant isotope mass scaling is consequently seen in the scaled one-fluid heat diffusion coefficient $A \chi_{\mathrm{eff}}/B_t$ which is around 50% lower in the Tritium plasma throughout the whole plasma radius. The isotope mass dependence in the particle transport channel is negligible, supported also by the perturbative particle transport analysis with gas puff modulation. The comparison of the edge particle fuelling or ionisation profiles from the EDGE2D-EIRENE simulations show that the absolute density differences that are necessary for the dimensionless match in the confined plasma dominate over any isotope mass dependencies of particle fuelling and ionization profiles at the plasma edge. Local GENE simulation results indicate a mild anti-gyroBohm effect at $\rho_\mathrm{tor}$ = 0.6 and thereby a small isotope mass dependence in favour of Tritium on heat transport and a negligible effect on particle transport. A significant fraction of the isotope scaling and reduced heat transport observed in the Tritium plasma is not captured in the GENE and ASTRA-TGLF-SAT2 simulations by simply changing the isotope mass for the same input profiles.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Development of high-performance long-pulse discharge in KSTAR

High-performance long-pulse plasma operation is essential for producing economically viable fusion energy in tokamak devices. To achieve such discharges in KSTAR, firstly, the rapid increase in the temperature of plasma-facing components was mitigated. The temperature increase of the poloidal limiter, especially, was associated with beam-driven fast ion orbit loss and the discrepancy of the equilibrium reconstructed with heated magnetic probes of signal drift. The fast ions lost to the poloidal limiter were reduced by optimizing the plasma shape and the composition of neutral beam injection (NBI). This nonlinear signal drift was successfully reduced by a new thermal shielding protector on the magnetic probes. Secondly, a lower loop voltage approach was implemented to reduce a poloidal flux consumption rate. A plasma current of 400 kA and a line-averaged electron density of ~2.0 × 10 19 m –3 were chosen by considering the L–H power threshold, fast ion orbit loss, and beam shine-through power loss for low loop voltage in KSTAR. In addition, the application of electron cyclotron heating also helped maintain the plasma with low loop voltage (~25 mV) by enhancing the NBI-driven current and achieving a high poloidal beta (β P ) state. KSTAR has achieved a long pulse (~90 s) operation with the high performance of β P $\leqslant$ 2.7, thermal energy confinement enhancement factor (H 98y2 ) ~ 1.1, and fraction of non-inductive current (f NI ) $\leqslant$ 0.96. Still, gradual degradation of the plasma performance has been observed over time in the discharges. In one of the long-pulse discharges, β P reduced by ~18% over the time of ~8τ R (current relaxation time, τ R ~5 s) and ~1067τ E,th (thermal energy confinement time, τ E,th ~45 ms). The degradation may be closely associated with weak, yet growing, and persistent toroidal Alfvén eigenmodes and their effect on fast ion confinement.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

A method to observe field-region oxide charge and inter-electrode isolation from CV-characteristics of n-on-p devices

Abstract N-on-psilicon sensors will be utilized in the Compact Muon Solenoid (CMS) detector's tracker and High Granularity Calorimeter (HGCAL) in the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). Among their several advantages in terms of radiation hardness over the traditionalp-on-nsensors in the extreme radiation environment of the HL-LHC are electron collection instead of holes and overlapping maxima of weighting and electric fields at the charge-collecting electrodes. The disadvantage of the multi-channel SiO 2 -passivatedn-on-psensors is the generation of an inversion layer under the Si/SiO 2 -interface by a positive interface-oxide-charge (N ox ) that at high densities can compromise the position resolution by creating a conduction channel between the electrodes. This issue is typically addressed by including additional isolnts (p-stp,p-spray) between n + -electrodes. Focusing on the guard-ring regions ofn-on-psensors where no isolation implants are applied between the electrodes, a capacitance-voltage (CV) characterization study of both 6-inch wafer test diodes and 8-inch HGCAL prototype and pre-series sensors showed a distinct threshold voltage (V th,iso ) in theCV-characteristics of a biased n + -electrode when its enclosing guard-ring was left floating. When reproduced by simulations, the measuredV th,iso was found to contain information on the field-regionN ox and indicate the threshold where the two electrodes become electrically isolated by the influence of the reverse bias voltage. Together with previous studies on the inter-electrode isolation of irradiatedn-on-psensors, the results indicate that position sensitiven-on-psensors without isolation implants may be feasible in future HEP experiments.

Instruments & Instrumentation↗

Eigenvectors from Eigenvalues: a survey of a basic identity in linear algebra

If $A$ is an $n \times n$ Hermitian matrix with eigenvalues $\lambda_1(A),\dots,\lambda_n(A)$ and $i,j = 1,\dots,n$, then the $j^{\mathrm{th}}$ component $v_{i,j}$ of a unit eigenvector $v_i$ associated to the eigenvalue $\lambda_i(A)$ is related to the eigenvalues $\lambda_1(M_j),\dots,\lambda_{n-1}(M_j)$ of the minor $M_j$ of $A$ formed by removing the $j^{\mathrm{th}}$ row and column by the formula $$ |v_{i,j}|^2\prod_{k=1;k\neq i}^{n}\left(\lambda_i(A)-\lambda_k(A)\right)=\prod_{k=1}^{n-1}\left(\lambda_i(A)-\lambda_k(M_j)\right)\,.$$ We refer to this identity as the \emph{eigenvector-eigenvalue identity}. Despite the simple nature of this identity and the extremely mature state of development of linear algebra, this identity was not widely known until very recently. In this survey we describe the many times that this identity, or variants thereof, have been discovered and rediscovered in the literature (with the earliest precursor we know of appearing in 1934). We also provide a number of proofs and generalizations of the identity.

97 MATHEMATICS AND COMPUTING↗

Fast nonthermal processes in pulsed laser deposition

Pulsed laser deposition (PLD) is typically used to grow epitaxial thin films of quantum materials. In this research, we use in situ x-ray scattering to study homoepitaxy of SrTiO 3 by energetic deposition (e-PLD) versus PLD thermalized by a He background gas (th-PLD). Energetic PLD suppresses the lateral growth of two-dimensional islands, which suggests that particles with kinetic energies of ~ 100 eV break up smaller islands. Fast interlayer transport occurs for th-PLD as well as e-PLD, implying a process operating on submicrosecond time scales for incident particles with kinetic energies below 10 eV.

36 MATERIALS SCIENCE↗

Measurements of Non-Maxwellian Electron Distribution Functions and Their Effect on Laser Heating

Electron velocity distribution functions driven by inverse bremsstrahlung heating are measured to be non-Maxwellian using a novel angularly resolved Thomson-scattering instrument and the corresponding reduction of electrons at slow velocities results in a ~40% measured reduction in inverse bremsstrahlung absorption. The distribution functions are measured to be super-Gaussian in the bulk (v/v th < 3) and Maxwellian in the tail (v/v th > 3) when the laser heating rate dominates over the electron-electron thermalization rate. Furthermore, simulations with the particle code quartz show the shape of the tail is dictated by the uniformity of the laser heating.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Ab initio prediction of an order-disorder transition in Mg 2 Ge O 4 : Implication for the nature of super-Earth's mantles

Here we present an ab initio prediction of an order-disorder transition (ODT) from a I¯42d-type to Th 3 P 4 -type phase in the cation sublattices of Mg 2 GeO 4 , a post-post-perovskite phase. This uncommon type of prediction is achieved by carrying out a high-throughput sampling of atomic configurations in a 56-atom supercell followed by a Boltzmann ensemble statistics calculation. Mg 2 GeO 4 is a low-pressure analog of I¯42d-type Mg 2 SiO 4 , a predicted major planet-forming phase of super-Earths' mantles. Therefore, a similar ODT is anticipated in I¯42d-type Mg 2 SiO 4 as well, which should impact the internal structure and dynamics of these planets. Furthermore, the prediction of this Th 3 P 4 -type phase in Mg 2 GeO 4 further enhances the relationship between the crystal structures of Earth/planet-forming silicates and oxides at extreme pressures and those of rare-earth sesquisulfides at low pressures.

36 MATERIALS SCIENCE↗

Enhanced sensitivity to trace 238 U impurity of sapphire via coincidence neutron activation analysis

Sapphire has mechanical and electrical properties that are advantageous for the construction of internal components of radiation detectors such as time projection chambers and bolometers. However, it has proved difficult to assess its 232 Th and 238 U content down to the picogram per gram level. Here, this work reports an experimental verification of a computational study that demonstrates 𝛾⁢𝛾 coincidence counting, coupled with neutron activation analysis (NAA), can reach ppt sensitivities. Combining results from 𝛾⁢𝛾 coincidence counting with those of earlier single-𝛾 counting based NAA shows that a sample of Saint Gobain sapphire has 232 Th and 238 U concentrations of <0.26 ppt and <2.3 ppt, respectively; the best constraints on the radiopurity of sapphire.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V th ) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J th ) of 8.8 A/cm 2 in cw mode and 7.6 A/cm 2 in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

47 OTHER INSTRUMENTATION↗