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The 1989 solar cell calibration balloon flight was successfully completed on August 9, 1989, meeting all objectives of the program. Forty-two modules were carried to an altitude of 118,000 ft (36.0 km). The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.
Ultrathin silicon solar cells with high efficiency and radiation tolerance can be made by incorporating light-trapping and heterojunction surface passivation. Calculations show that a 2-micron-thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50-micron coverglass, the thin cells had, after irradiation, a specific power over ten times higher than that of the baseline design.
Large-area photovoltaic solar cells based on direct current magnetron sputter deposition of indium tin oxide (ITO) into single-crystal p-InP substrates demonstrated both the radiation hardness and high performance necessary for extraterrestrial applications. A small-scale production project was initiated in which approximately 50 ITO/InP cells are being produced. The procedures used in this small-scale production of 4-sq cm ITO/InP cells are presented and discussed. The discussion includes analyses of performance range of all available production cells, and device performance data of the best cells thus far produced. Additionally, processing experience gained from the production of these cells is discussed, indicating other issues that may be encountered when large-scale productions are begun.
Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).
The 1991 solar cell calibration balloon flight was completed on August 1, 1991. All objectives of the flight program were met. Thirty-nine modules were carried to an altitude of 119,000 ft. (36.3 km). Data telemetered from the modules were corrected to 28 C and to 1 AU. The calibrated cells have been returned to the participants and can now be used as reference standards in simulator testing of cells and arrays.
The 1992 solar cell calibration balloon flight was completed on August 1, 1992. All objectives of the flight program were met. Forty-one modules were carried to an altitude of 119,000 ft (36.3 km). Data telemetered from the modules was corrected to 28 C and 1 AU. The calibrated cells have been returned to 39 participants and can now be used as reference standards in simulator testing of cells and arrays.
The 1993 solar cell calibration balloon flight was completed on July 29, 1993. All objectives of the flight program were met. Forty modules were carried to an altitude of 120,000 ft (36.6 km). Data telemetered from the modules was corrected to 28 C and to 1 AU. The calibrated cells have been returned to 8 participants and can now be used as reference standards in simulator testing of cells and arrays.
The 1994 solar cell calibration balloon flight was completed on August 6, 1994. All objectives of the flight program were met. Thirty-seven modules were carried to an altitude of 119,000 ft (36.6 km). Data telemetered from the modules was corrected to 28 C and to 1 AU. The calibrated cells have been returned to the 6 participants and can now be used as reference standards in simulator testing of cells and arrays.
The 1996 solar cell calibration balloon flight campaign was completed with the first flight on June 30, 1996 and a second flight on August 8, 1996. All objectives of the flight program were met. Sixty-four modules were carried to an altitude of 120,000 ft (36.6 km). Full 1-5 curves were measured on 22 of these modules, and output at a fixed load was measured on 42 modules. This data was corrected to 28 C and to 1 AU (1.496 x 10(exp 8) km). The calibrated cells have been returned to the participants and can now be used as reference standards in simulator testing of cells and arrays.
The 1997 solar cell calibration balloon flight campaign consisted of three flights, the first flight on June 11, 1997, the second flight on August 2, 1997, and the third flight on August 24, 1997. One flight, flown on August 14, 1997, was terminated early because of a telemetry transmitter failure, and its payload was reflown on the August 24 flight. All objectives of the flight program were met. Ninety-eight modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on 32 of these modules, and output at a fixed load was measured on 66 modules. This data was corrected to 28 C and to 1 AU (1.496 x 10(exp 8) km). The calibrated cells have been returned to the participants and can now be used as reference standards in simulator testing of cells and arrays.
The 1998 solar cell calibration balloon flight campaign consisted of one flight, which occurred on August 15, 1998. All objectives of the flight program were met. Thirty-one modules were carried to an altitude of = 120,000 ft (36.6 km). Full I-V curves were measured on 4 of these modules, and output at a fixed load was measured on 27 modules. This data was corrected to 28 C and to 1 AU (1.496 x 10(exp 8) km). The calibrated cells have been returned to the participants and can now be used as reference standards in simulator testing of cells and arrays.
The 1999 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 14, 1999, and July 6, 1999. All objectives of the flight program were met. Fifty-seven modules were carried to an altitude of approximately equal to 120,000 ft (36.6 km). Full I-V curves were measured on five of these modules, and output at a fixed load was measured on forty-three modules (forty-five cells), with some modules repeated on the second flight. This data was corrected to 28 C and to 1 AU (1.496 x 10 (exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.
The 2000 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 27, 2000, and July 5, 2000. All objectives of the flight program were met. Sixty-two modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on sixteen of these modules, and output at a fixed load was measured on thirty-seven modules (forty-six cells), with some modules repeated on the second flight. Nine modules were flown for temperature measurement only. This data was corrected to 28 C and to 1 AU (1.496x10(exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.
The 2001 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 26, 2001, and July 4, 2001. Fifty-nine modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on nineteen of these modules, and output at a fixed load was measured on thirty-two modules (forty-six cells), with some modules repeated on the second flight. Nine modules were flown for temperature measurement only. The data from the fixed load cells on the first flight was not usable. The temperature dependence of the first-flight data was erratic and we were unable to find a way to extract accurate calibration values. The I-V data from the first flight was good, however, and all data from the second flight was also good. The data was corrected to 28 C and to 1 AU (1.496 x 10(exp 8)km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.
A multi-junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.
Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.
Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.
The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.