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At least 973 records · Page 54

Assessment of Selected CERES Electronic Component Survivability under Simulated Overvoltage Conditions

In August, 1998 a Clouds and the Earth's Radiant Energy System (CERES) instrument telemetry housekeeping parameter generated a yellow warning message that indicated an on-board + 15V Data Acquisition Assembly (DAA) power converter deregulation anomaly. An exhaustive investigation was undertaken to understand this anomaly and the long-term consequences which have severely reduced CERES operations on the Tropical Rainfall Measuring Mission (TRMM) spacecraft. Among investigations performed were ground tests that approximated the on-board electronic circuitry using a small quantity of flight identical components exposed to maximum spacecraft bus over-voltage conditions. These components include monolithic integrated microcircuits that perform analog signal conditioning on instrument sensor signals and an analog- to-digital converter (ADC) for the entire DAA. All microcircuit packages have either a bipolar silicon design with internal current limiting protections or have a complementary metal oxide semiconductor (CMOS) design with bias protections. Ground tests that have been running for approximately 8 months have indicated that these components are capable of withstanding as much as twice their input supply voltage ratings without noticeable performance degradation. These data provide CERES operators with confidence of being able to continue science operations over the remaining life of the TRMM mission. This paper will discuss this anomaly and some possible causes, a simulator of affected electronics, test results, prognosis for future CERES operations, and conclusions.

Chapman, John J.↗

Time-Dependent Stress Rupture Strength Degradation of Hi-Nicalon Fiber-Reinforced Silicon Carbide Composites at Intermediate Temperatures

The stress rupture strength of silicon carbide fiber-reinforced silicon carbide composites with a boron nitride fiber coating decreases with time within the intermediate temperature range of 700 to 950 degree Celsius. Various theories have been proposed to explain the cause of the time-dependent stress rupture strength. The objective of this paper is to investigate the relative significance of the various theories for the time-dependent strength of silicon carbide fiber-reinforced silicon carbide composites. This is achieved through the development of a numerically based progressive failure analysis routine and through the application of the routine to simulate the composite stress rupture tests. The progressive failure routine is a time-marching routine with an iterative loop between a probability of fiber survival equation and a force equilibrium equation within each time step. Failure of the composite is assumed to initiate near a matrix crack and the progression of fiber failures occurs by global load sharing. The probability of survival equation is derived from consideration of the strength of ceramic fibers with randomly occurring and slow growing flaws as well as the mechanical interaction between the fibers and matrix near a matrix crack. The force equilibrium equation follows from the global load sharing presumption. The results of progressive failure analyses of the composite tests suggest that the relationship between time and stress-rupture strength is attributed almost entirely to the slow flaw growth within the fibers. Although other mechanisms may be present, they appear to have only a minor influence on the observed time-dependent behavior.

Progressive Failure Analysis↗

Unified Material-Environment Interaction Model for Binary UHTC Composites

A new model for the surface chemistry of zirconium and hafnium diborides containing silicon-carbide when exposed to high temperature conditions in air is formulated. Oxidation dynamics are simplified by considering the diffusion-limited equilibrium regime within the material at elevated temperatures. This model is first assessed against experimental mass-gain data taken from UHTC samples heated to high temperature in an oxygen environment. Then, further evaluations of the new model are conducted using hypersonic CFD simulations to analyze conditions experienced by HfB2-SiC in arc jet experiments conducted at NASA Ames Research Center. Measurements of stagnation point heat transfer and pressure are then used to calibrate the simulations. Results of coupled CFD-material response simulations are then compared to the surface temperatures measured during the Ames arc jet test. Results support the use of the proposed model while highlighting the need for improved gas-phase data on the additional constituents considered.

ultra high temperature ceramic↗

Heterogeneous integration of an electro-optical platform

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Kodigala, Ashok↗

Measurement of Contact Resistivity In Symmetric Polycrystalline Si/SiO x /Monocrystalline Si Test Structures Using Variable Light Illumination

While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.

14 SOLAR ENERGY↗

Niobium-aluminum base alloys having improved, high temperature oxidation resistance

A niobium-aluminum base alloy having improved oxidation resistance at high temperatures and consisting essentially of 48%-52% niobium, 36%-42% aluminum, 4%-10% chromium, 0%-2%, more preferably 1%-2%, silicon and/or tungsten with tungsten being preferred, and 0.1%-2.0% of a rare earth selected from the group consisting of yttrium, ytterbium and erbium. Parabolic oxidation rates, k.sub.p, at 1200.degree. C. range from about 0.006 to 0.032 (mg/cm.sup.2).sup.2 /hr. The new alloys also exhibit excellent cyclic oxidation resistance.

Hebsur, Mohan G.↗

Surface Catalysis and Oxidation on Stagnation Point Heat Flux Measurements in High Enthalpy Arc Jets

Heat flux sensors are routinely used in arc jet facilities to determine heat transfer rates from plasma plume. The goal of this study is to assess the impact of surface composition changes on these heat flux sensors. Surface compositions can change due to oxidation and material deposition from the arc jet. Systematic surface analyses of the sensors were conducted before and after exposure to plasma. Currently copper is commonly used as surface material. Other surface materials were studied including nickel, constantan gold, platinum and silicon dioxide. The surfaces were exposed to plasma between 0.3 seconds and 3 seconds. Surface changes due to oxidation as well as copper deposition from the arc jets were observed. Results from changes in measured heat flux as a function of surface catalycity is given, along with a first assessment of enthalpy for these measurements. The use of cupric oxide is recommended for future heat flux measurements, due to its consistent surface composition arc jets.

Nawaz, Anuscheh↗

Ta Based Damascene Resonators

Transmon qubits have become a leading technology in quantum information science (QIS), with fabrication techniques widely accessible. Historically, devices were predominantly made from aluminum (Al) and niobium (Nb), but state-of-the-art transmons now use tantalum (Ta) achieving coherence times up to and exceeding 0.5 milliseconds [1-3]. The differentiation in performance between Ta and Nb-based devices is attributed to the surface oxidation states affecting Two-Level-System (TLS) noise. One approach to quickly evaluating material and device performance consists of fabricating only the readout resonator of a qubit and evaluating the quality factor which is the strategy employed in this project. Our research focuses on Ta coplanar waveguide (CPW) resonators fabricated using a damascene technique producing pristine metal structures within silicon substrates. This approach increases the dielectric substrate's participation ratio while keeping device edges oxide-free due to entrenchment. This collaborative effort, involving Pacific Northwest National Laboratory (PNNL), NY CREATES/SUNY Poly, and Brookhaven National Laboratory (BNL), has resulted in resonators with Q factors as high as 104 at low power. Ongoing studies aim to further understand and improve device performance by systematic analysis of oxygen trapped between device layers during processing. This research showcases the potential for significant improvements in superconducting qubit performance via the damascene process, heralding new possibilities for the advancement of scalable QIS technology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Safety Testing and Destructive Examination of AGR-2 UO 2 Compact 3-1-1

Post-irradiation examination and elevated-temperature safety testing are being performed on compacts from the Advanced Gas Reactor (AGR) Fuel Development and Qualification Program’s second irradiation experiment (AGR-2). The compacts in the AGR-2 irradiation experiment held either tristructural isotropic (TRISO)-coated particles containing uranium oxide fuel kernels (UO 2 ) or TRISO-coated particles containing fuel kernels with both uranium carbide and uranium oxide phases (UCO). In UO 2 TRISO particles, oxygen released by uranium fission can react with the surrounding carbon in the buffer layer to form carbon monoxide (CO). Excess CO can lead to various irradiation performance issues under certain operating conditions, such as pressure-induced fracture, kernel migration, and silicon carbide (SiC) corrosion. In UCO TRISO particles, CO formation is reduced because the chemical potential for oxidation of uranium carbide is lower than for oxidation of carbon.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

Abstract Recent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

47 OTHER INSTRUMENTATION↗

Dopant Sensitive Electrolytic Etching of Germanium with High Selectivity

Abstract The enhanced charge carrier mobility and photon absorption compared to silicon make germanium attractive for next-generation photo diodes. However, the complex oxidation behavior of germanium challenges dopant-dependent selective etching that is desired for the fabrication of backside imaging architectures. This report demonstrates electrolytic wet etching of p-doped germanium which proceeds up to 17,500x faster than etching of intrinsic germanium. Homoepitaxially grown layers of germanium were electrolytically etched in potassium hydroxide over a range of biases. Intermittent acquisition of cyclic voltammetry spectra during etching has suppressed the formation of electric double layers, maintained appreciable etch rates, and allowed for in operando process control. The observed etch rates scaled with dopant concentration. An effective etch rate of germanium removal of 2.100±0.044 µm/min was accomplished for a boron dopant concentration of 6E18cm-3. For nominally intrinsic germanium, however, an effective etch rate of only 0.00012±0.00011 µm/min was observed. A series of systematic electrolytic etch experiments have revealed the transfer of 4 electrons per germanium atom removed.

Wood, Joseph G.↗

A reliable all-silver front contact for silicon solar cells.

Methods have been found to apply an adherent and humidity resistant silver-only front contact to n on p silicon solar cells. The critical processing step was the removal of the diffused oxide layer. Humidity resistance is superior to present day commercial titanium-silver contacts and the electrical characteristics of the cells are excellent. Titanium, which is degraded by humidity and which is a source of heavy metal poisoning, has been eliminated from the contact.

Lamneck, J. H., Jr.↗

Organosilicon compounds. XVIII - Silicon-containing dianhydrides

Description of four new silicon-containing dianhydrides synthetized in an attempt to provide useful silicon-containing polyimide precursors. They were prepared by aqueous potassium permanganate-pyridine oxidations of corresponding tetramethyl intermediates to form tetracarboxylic acids, which were dehydrated to the dianhydrides.

Pratt, J. R.↗

Deposition and material response from Mach 0.3 burner rig combustion of SRC 2 fuels

Collectors at 1173K (900 C) were exposed to the combustion products of a Mach 0.3 burner rig fueled with various industrial turbine liquid fuels from solvent refined coals. Four fuels were employed: a naphtha, a light oil, a wash solvent and a mid-heavy distillate blend. The response of four superalloys (IN-100, U 700, IN 792 and M-509) to exposure to the combustion gases from the SRC-2 naphtha and resultant deposits was also determined. The SRC-2 fuel analysis and insights obtained during the combustion experience are discussed. Particular problems encountered were fuel instability and reactions of the fuel with hardware components. The major metallic elements which contributed to the deposits were copper, iron, chromium, calcium, aluminum, nickel, silicon, titanium, zinc, and sodium. The deposits were found to be mainly metal oxides. An equilibrium thermodynamic analysis was employed to predict the chemical composition of the deposits. The agreement between the predicted and observed compounds was excellent. No hot corrosion was observed. This was expected because the deposits contained very little sodium or potassium and consisted mainly of the unreactive oxides. However, the amounts of deposits formed indicated that fouling is a potential problem with the use of these fuels.

Santoro, G. J.↗

Elevated temperature properties of aligned ferrous eutectics

Iron base alloys containing aluminum and chromium together with smaller amounts of yttrium and silicon are of interest for high temperature applications. Strengthening an inherently weak but oxidation resistant solid solution matrix with aligned in situ chromium carbides represents an attractive approach to achieving both surface stability and creep resistance at elevated temperatures. Aligned microstructures were produced in alloys of approximately 30 wt % (Cr + Mn), about 3 wt % C and the balance Fe consisting of a gamma matrix and the hexagonal carbide (Cr, Mn, Fe)7C3. The tensile and stress rupture strength to 2000 F of aligned Fe-20 w/t % Cr-10 wt % Mn-3.2 wt % C measured parallel to the carbide reinforcement exceeded those of the strongest iron-nickel superalloys, e.g., CRM-6D developed by Chrysler for automotive turbine application. The cyclic oxidation and sulfidation response of these alloys at elevated temperatures can be markedly improved by aluminum additions.

Lemkey, F. D.↗

Development of metallization process. FSA project, cell and module formation research area

New pastes were evaluated that contained additives to aid in the silicon-to-metallization contact. None were completely successful. A reevaluation of the molybdenum oxide paste and the two-step screen printing process was done. The oxide paste did not show promise. The two-step process enabled soldering of the cells but the cells still had a high series resistance. Pastes are on order from a different manufacturer.

Garcia, A., III↗