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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Fast electron flux driven by lower hybrid wave in the scrape-off layer

The fast electron flux driven by Lower Hybrid Wave (LHW) in the scrape-off layer (SOL) in EAST is analyzed both theoretically and experimentally. The five bright belts flowing along the magnetic field lines in the SOL and hot spots at LHW guard limiters observed by charge coupled device and infrared cameras are attributed to the fast electron flux, which is directly measured by retarding field analyzers (RFA). The current carried by the fast electron flux, ranging from 400 to 6000 A/m{sup 2} and in the direction opposite to the plasma current, is scanned along the radial direction from the limiter surface to the position about 25 mm beyond the limiter. The measured fast electron flux is attributed to the high parallel wave refractive index n{sub ||} components of LHW. According to the antenna structure and the LHW power absorbed by plasma, a broad parallel electric field spectrum of incident wave from the antennas is estimated. The radial distribution of LHW-driven current density is analyzed in SOL based on Landau damping of the LHW. The analytical results support the RFA measurements, showing a certain level of consistency. In addition, the deposition profile of the LHW power density in SOL is also calculated utilizing this simple model. This study provides some fundamental insight into the heating and current drive effects induced by LHW in SOL, and should also help to interpret the observations and related numerical analyses of the behaviors of bright belts and hot spots induced by LHW.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Transfer-Free Synthesis of Atomically Precise Graphene Nanoribbons on Insulating Substrates

The rational bottom-up synthesis of graphene nanoribbons (GNRs) provides atomically precise control of widths and edges that give rise to a wide range of electronic properties promising for electronic devices such as field-effect transistors (FETs). Since the bottom-up synthesis commonly takes place on catalytic metallic surfaces, the integration of GNRs into such devices requires their transfer onto insulating substrates, which remains one of the bottlenecks in the development of GNR-based electronics. Herein, we report on a method for the transfer-free placement of GNRs on insulators. This involves growing GNRs on a gold film deposited onto an insulating layer followed by gentle wet etching of the gold, which leaves the nanoribbons to settle in place on the underlying insulating substrate. Scanning tunneling microscopy and Raman spectroscopy confirm that atomically precise GNRs of high density uniformly grow on the gold films deposited onto SiO 2 /Si substrates and remain structurally intact after the etching process. We have also demonstrated transfer-free fabrication of ultrashort channel GNR FETs using this process. A very important aspect of the present work is that the method can scale up well to 12 in. wafers, which is extremely difficult for previous techniques. Our work here thus represents an important step toward large-scale integration of GNRs into electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Enhanced red luminescence quantum yield from Gd3+/Eu3+: CaLa2ZnO5 phosphor spheres for photonic applications

Highlights: • Ravishing red emission is observed from Gd{sup 3+}/Eu{sup 3+}: CaLa{sub 2}ZnO{sub 5} phosphor spheres. • Red emission of Eu{sup 3+} was significantly enhanced by co-doping with Gd{sup 3+}. • Effective sensitization of Gd{sup 3+} ions and enhanced quantum yield have been elucidated. • Energy transfer from Gd{sup 3+} to Eu{sup 3+} was demonstrated by several fluorescence dynamics. • CIE coordinates are very close to National Television Standard Committee (NTSC). - Abstract: Novel bright red emission was obtained from co-doped Gd{sup 3+}/Eu{sup 3+}: CaLa{sub 2}ZnO{sub 5} (CLZO) phosphor spheres. We have successfully synthesized co-doped Gd{sup 3+}/Eu{sup 3+}: CLZO phosphor spheres by citrate sol-gel method. Structural and morphological analysis was carried out by XRD and FE-SEM. EDS and XPS studies were employed to analyze the presence of elements and their ionic states respectively. The complex formation studies were carried out by the FTIR spectral study. The photoluminescence spectral profiles confirm the dazzling red emission has been observed at 626 nm ({sup 5}D{sub 0} → {sup 7}F{sub 2}) from the Eu{sup 3+}: CLZO phosphors under the excitation of 467 nm. Upon increasing the Eu{sup 3+} concentration, the photoluminescence performance has also increased remarkably. The optimized concentration of the Eu{sup 3+} was noticed at 12 mol%. Upon co-doping with Gd{sup 3+} ions to Eu{sup 3+}: CLZO phosphors, the red emission pertaining to Eu{sup 3+} was appreciably enhanced through energy transfer from Gd{sup 3+} to Eu{sup 3+} ions. The energy transfer mechanism was substantiated by several fluorescent methods such as lifetime decay dynamics and quantum efficiencies. Commission International de I’Echairage (CIE) 1931 chromaticity coordinates (x–y) calculated for singly doped and co-doped CLZO samples. The CIE coordinates were found to be (0.6644, 0.3355) and (0.6688, 0.3311) respectively, which were good consistent with the standard values of NTSC surprisingly. Correlated color temperature (CCT) value was evaluated for optimised co-doped sample and it was found to be between 2000–5000 K which could be more preferable red component for warm white light applications. The lifetime and quantum efficiency of the optimized co-doped sample have been evaluated as 1.102 ms and 69% respectively. The ravishing red emission of the Gd{sup 3+}/Eu{sup 3+}: CLZO phosphor spheres which suggests that these phosphor materials could be promising candidates for red luminescent optical devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Gyrokinetic modelling of stationary electron and impurity profiles in tokamaks

Particle transport due to Ion Temperature Gradient (ITG)/Trapped Electron Mode (TEM) turbulence is investigated using the gyrokinetic code GENE. Both a reduced quasilinear treatment and nonlinear simulations are performed for typical tokamak parameters corresponding to ITG dominated turbulence. The gyrokinetic results are compared and contrasted with results from a computationally efficient fluid model. A selfconsistent treatment is used, where the stationary local profiles are calculated corresponding to zero particle flux simultaneously for electrons and trace impurities. The scaling of the stationary profiles with magnetic shear, safety factor, electron-to-ion temperature ratio, collisionality, toroidal sheared rotation, plasma β, triangularity, and elongation is investigated. In addition, the effect of different main ion mass on the zero flux condition is discussed. The electron density gradient can significantly affect the stationary impurity profile scaling. It is therefore expected that a selfconsistent treatment will yield results more comparable to experimental results for parameter scans where the stationary background density profile is sensitive. This is shown to be the case in scans over magnetic shear, collisionality, elongation, and temperature ratio, for which the simultaneous zero flux electron and impurity profiles are calculated. A slight asymmetry between hydrogen, deuterium, and tritium with respect to profile peaking is obtained, in particular, for scans in collisionality and temperature ratio.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Understanding palladium–tellurium cluster formation on WTe2: From a kinetically hindered distribution to thermodynamically controlled monodispersity

Abstract A fundamental understanding of the transition metal dichalcogenide (TMDC)–metal interface is critical for their utilization in a broad range of applications. We investigate how the deposition of palladium (Pd), as a model metal, on WTe2(001), leads to the assembly of Pd into clusters and nanoparticles. Using X-ray photoemission spectroscopy, scanning tunneling microscopy imaging, and ab initio simulations, we find that Pd nucleation is driven by the interaction with and the availability of mobile excess tellurium (Te) leading to the formation of Pd-Te clusters at room temperature. Surprisingly, the nucleation of Pd-Te clusters is not affected by intrinsic surface defects, even at elevated temperatures. Upon annealing, the Pd-Te nanoclusters adopt an identical nanostructure and are stable up to ∼523 K. Density functional theory calculations provide a foundation for our understanding of the mobility of Pd and Te atoms, preferential nucleation of Pd-Te clusters, and the origin of their annealing-induced monodispersity. These results highlight the role the excess chalcogenide atoms may play in the metal deposition process. More broadly, the discoveries of synthetic pathways yielding thermally robust monodispersed nanostructures on TMDCs are critical to the manufacturing of novel quantum and microelectronics devices and catalytically active nano-alloy centers.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Structural, Microstructural, Magnetic, and Ferroelectric Properties of Ba{sup 2+}-Doped BiFeO{sub 3} Nanocrystalline Multifferroic Material

Multiferroic barium-substituted nanocrystalline samples having the general formula Bi{sub 1−x}Ba{sub x}FeO{sub 3} (where x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.25) were prepared by cost-effective sol–gel method using metal nitrates as oxidants. The prepared samples were annealed at 650 {sup ∘}C for 4 h using a muffle furnace. The influence of Ba{sup 2+} doping on the structural, microstructural, magnetic, and ferroelectric properties of bismuth ferrite (BFO) was studied systematically by standard techniques. All the samples were characterized by X-ray diffraction (XRD) technique, and the average crystallite size was calculated using Scherrer’s formula. The surface morphology of the prepared nanocrystalline samples was studied using field emission scanning electron microscopy (FE-SEM) technique. FTIR spectra were obtained to confirm the formation of the perovskite structures. The elemental compositional details obtained were confirmed by energy dispersive spectrum (EDS) analysis. Room temperature magnetic measurements were carried out up to a field of 15 kOe, and the parent sample (BFO) shows weak ferromagnetism. Further on, Ba{sup 2+} substitution in BFO shows an increase in magnetization. P–E loops were obtained to study the ferroelectric properties of all the samples. Obtained enhancement in magnetic and ferroelectric properties at room temperature is of great interest within the research community due to its wide range of applications in memory storage, spintronics, sensors, and multi-functional devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Novel self-assembled two-dimensional layered oxide structure incorporated with Au nanoinclusions towards multifunctionalities

Two-dimensional (2D) layered oxides have recently attracted wide attention owing to the strong coupling among charges, spins, lattice, and strain, which allows great flexibility and opportunities in structure designs as well as multifunctionality exploration. In parallel, plasmonic hybrid nanostructures exhibit exotic localized surface plasmon resonance (LSPR) providing a broad range of applications in nanophotonic devices and sensors. A hybrid material platform combining the unique multifunctional 2D layered oxides and plasmonic nanostructures brings optical tuning into the new level. Here, a novel self-assembled Bi 2 MoO 6 (BMO) 2D layered oxide incorporated with plasmonic Au nanoinclusions has been demonstrated via one-step pulsed laser deposition (PLD) technique. Comprehensive microstructural characterizations, including scanning transmission electron microscopy (STEM), differential phase contrast imaging (DPC), and STEM tomography, have demonstrated the high epitaxial quality and particle-in-matrix morphology of the BMO-Au nanocomposite film. DPC-STEM imaging clarifies the magnetic domain structures of BMO matrix. Three different BMO structures including layered supercell (LSC) and superlattices have been revealed which is attributed to the variable strain states throughout the BMO-Au film. Owing to the combination of plasmonic Au and layered structure of BMO, the nanocomposite film exhibits a typical LSPR in visible wavelength region and strong anisotropy in terms of its optical and ferromagnetic properties. This study opens a new avenue for developing novel 2D layered complex oxides incorporated with plasmonic metal or semiconductor phases showing great potential for applications in multifunctional nanoelectronics devices.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Electrical Control of the Magnetic State of Fe

Magneto-electric coupling offers a new pathway to information storage in magnetic memory devices. This phenomenon has been observed in various materials ranging from insulators to semiconductors. In bulk metallic systems, magneto-electric coupling has been disregarded as the electric field cannot enter bulk metals. In this work, we show that a substantial magneto-electric coupling exists in metallic Fe nano-islands grown on Cu(111). Using the electric field in the tunnel junction of a scanning tunneling microscope, the magnetic order parameter and the crystal structure of Fe was changed on the nanometer scale. This allows high density nonvolatile information storage by means of magneto-electric coupling in a simple metallic system.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2017

Front-End Electron Transfer Dissociation Coupled to a 21 Tesla FT-ICR Mass Spectrometer for Intact Protein Sequence Analysis

High resolution mass spectrometry is a key technology for in-depth protein characterization. High-field Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS) enables high-level interrogation of intact proteins in the most detail to date. However, an appropriate complement of fragmentation technologies must be paired with FTMS to provide comprehensive sequence coverage, as well as characterization of sequence variants, and post-translational modifications. Here we describe the integration of front-end electron transfer dissociation (FETD) with a custom-built 21 tesla FT-ICR mass spectrometer, which yields unprecedented sequence coverage for proteins ranging from 2.8 to 29 kDa, without the need for extensive spectral averaging (e.g., ~60% sequence coverage for apo-myoglobin with four averaged acquisitions). The system is equipped with a multipole storage device separate from the ETD reaction device, which allows accumulation of multiple ETD fragment ion fills. Consequently, an optimally large product ion population is accumulated prior to transfer to the ICR cell for mass analysis, which improves mass spectral signal-to-noise ratio, dynamic range, and scan rate. We find a linear relationship between protein molecular weight and minimum number of ETD reaction fills to achieve optimum sequence coverage, thereby enabling more efficient use of instrument data acquisition time. Finally, real-time scaling of the number of ETD reactions fills during method-based acquisition is shown, and the implications for LC-MS/MS top-down analysis are discussed. .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Effect of growth dynamics on the structural, photophysical and pseudocapacitance properties of famatinite copper antimony sulphide colloidal nanostructures (including nanosheets)

Facile phase selective synthesis of copper antimony sulphide (CAS) nanostructures is important because of their tunable photoconductive and electrochemical properties. In this study, off-stoichiometric famatinite phase CAS (fCAS) quasi-spherical and quasi-hexagonal colloidal nanostructures (including nanosheets) of sizes, 2.4–18.0 nm were grown under variable conditions of temperature (60–200 °C), time and oleylamine capping ligand concentration using copper(II) acetylacetonate and antimony(III) diethyldithiocarbamate precursors. Data from powder X-ray diffraction, Raman spectroscopy and high-resolution scanning/transmission electron microscopy confirm the tetragonal structure of the famatinite phase. X-ray photoelectron spectroscopy, transmission electron microscopy and scanning electron microscopy-energy dispersive X-ray spectroscopy data suggest a correlation of particle size, morphology and composition of the off-stoichiometric fCAS nanostructures with growth temperature and time, and oleylamine concentration. The off-stoichiometric Cu 3-a Sb 1+b S 4±c (a, b, c – mole fractions) nanostructures being severely copper-deficient and antimony-rich, exhibit shallow-lying acceptor copper vacancy states, deep-lying donor states of antimony interstitials, sulphur vacancies and antimony-copper antisites and shallow-lying acceptor surface trapping states. Further, these electronic states are likely implicated in tunable UV-visible absorption and bandgaps between 2.3 and 2.8 eV, and broad visible-NIR photoluminescence with fast recombination of radiative lifetimes between 0.2 and 6.2 ns, confirmed from absorption, steady-state and time-resolved photoluminescence spectroscopies. Additionally, cyclic voltammetry and electrochemical impedance spectroscopy confirm that electrodes of the fCAS nanostructures display slightly variable pseudocapacitance of charge-storage primarily via possible sodium ion intercalation with a high specific capacitance of ~84 F g -1 obtained at a scan rate of 5 mV s -1 . Overall, these results show the influence of composition, in particular point defects, phase quality and morphology on the optical and pseudocapacitance properties of fCAS nanostructures, suitable as solar absorbers or electrodes for energy storage devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Growing barium hexaferrite (BaFe{sub 12}O{sub 19}) thin films using chemical solution deposition

Barium hexaferrite (BaFe{sub 12}O{sub 19}, or simply known as BaM) thin films has been recognized as a potential candidate for microwave-based devices, magnetic recording media and data storage. To grow BaM thin films, chemical solution deposition is conducted using the aqueous solution of metal nitrates, which involves spin coatings on Si substrates. Furthermore, Thermal Gravimeter Analysis (TGA), X-Ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) are applied to evaluate the decomposition behavior, structure, morphology, and magnetic properties of BaM thin films. Additionally, the effects of number of layers variation are also investigated. Finally, magnetic properties analysis indicates the isotropic nature of the films.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Commissioning of the soft x-ray undulator beamline at the Siam Photon Laboratory

The synchrotron radiation from the first undulator at the Siam Photon Laboratory was characterized with the photon beam position monitors (BPMs) and grating monochromator. The soft x-ray undulator beamline employs a varied line-spacing plane grating monochromator with three interchangeable gratings. Since 2010, the beamline has delivered photons with energy of 40-160 and 220-1040 eV at the resolving power of 10,000 for user services at the two end- stations that utilize the photoemission electron spectroscopy and microscopy techniques. The undulator power-density distributions measured by the 0.05-mm wire-scan BPM were in good agreement with those in simulation. The flux-density distributions were evaluated in the red-shift measurements, which identify the central cone of radiation and its distribution. Since 2014, the operation of the other insertion devices in the storage ring has started, and consequently bought about the increases in the emittance from 41 to 61 nm·rad and the coupling constant from 4 to 11%. The local electron-orbit correction greatly improved the alignment of the electron beam in the undulator section resulting in the improvements of the photon flux and harmonics peaks of the undulator radiation.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

TH-CD-207B-11: Multi-Vendor Phantom Study of CT Lung Density Metrics: Is a Reproducibility of Less Than 1 HU Achievable?

Purpose: To standardize the calibration procedures of CT lung density measurements using low-density reference foams in a phantom, and to demonstrate a reproducibility of less than 1 HU for lung equivalent foam densities measured across CT vendor platforms and protocols. Methods: A phantom study was conducted on CT scanner models from 4 vendors at 100, 120, and 135/140 kVp and 1.5, 3, and 6 mGy dose settings, using a lung density phantom containing air, water, and 3 reference foams (indirectly calibrated) with discrete densities simulating a 5-cm slice of the human chest. Customized segmentation software was used to analyze the images and generate a mean HU and variance for each of the density for the 22 vendor/protocols. A 3-step calibration process was devised to remove a scanner-dependent parameter using linear regression of the HU value vs the relative electron density. The results were mapped to a single energy (80 keV) for final comparison. Results: The heterogeneity across vendor platforms for each density assessed by a random effects model was reduced by 50% after re-calibration, while the standard deviation of the mean HU values also improved by about the same amount. The 95% CI of the final HU value was within +/−1 HU for all 3 reference foam densities. For the backing lung foam in the phantom (served as an “unknown”), this CI is +/− 1.6 HU. The kVp and dose settings did not appear to have significant contributions to the variability. Conclusion: With the proposed calibration procedures, the inter-scanner reproducibility of better than 1 HU is demonstrated in the current phantom study for the reference foam densities, but not yet achieved for a test density. The sources of error are being investigated in the next round of scanning with a certified Standard Reference Material for direct calibration. Fain: research funding from GE Healthcare to develop pulmonary MRI techniques. Hoppel: employee of Toshiba Medical Research Institute USA/financial interest with GE Healthcare. M. Fuld: employee of Siemens Healthcare for medical device equipment and software. This project is supported partially by RSNA QIBA Concept Award (Fain), NIH/NIBIB, HHSN268201300071C (Y).

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

Performance of Scintillation Detectors Based on Quantum Dots in a Semiconductor Matrix (Final Technical Report)

InAs Quantum Dots (QDs) embedded into GaAs semiconductor waveguide have unique scintillation properties, valuable for nuclear security, medical imaging, and high energy physics. In this work, we developed thick (~25um) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. In this type of detector, the GaAs matrix acts as a stopping material for charged particles or photons generating electrons captured by the QDs acting as luminescence centers. The QD medium is designed to provide fast capture of electrons into QDs (few ps), high QD luminescence efficiency at room temperature (>50%), and strong red-shift of photoluminescence (PL) from the GaAs absorption edge (>250nm). Typical devices consist of a 10-25um thick GaAs layer with embedded sheets of modulation p-type doped InAs QDs and an InGaAs photodetector tuned to the QD emission wavelength. The thick GaAs layer acts also as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (~1cm -1 ) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from α-particles were analyzed with both an external photodiode (PD) and an integrated PD which provided an improved optical coupling. In the former case, the external InGaAs PD was air-coupled to the scintillator and had the light collection efficiency of about 1% corresponding to limited light extraction through a planar interface with air due to total internal reflection. The mean charge collected by the integrated PD was in the range of (3÷5)×10 4 photoelectrons per 1 MeV of deposited energy, or ~13-20% of the theoretically achievable light yield. Timing of the integrated device was measured by wire-bonding it to the input of an 8 GHz IC. The scintillation response shows an extremely fast 0.3-0.6 ns decay constant and about 40-70 ps time resolution, limited by the system noise. The combined light yield and decay time makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported making it valuable for high energy physics and medical imaging applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Effects of europium substitution for In on structure and photoelectric properties of CuIn{sub 1−x}Eu{sub x}Te{sub 2}

The structures and optical and electric properties of europium doped CuIn{sub 1−x}Eu{sub x}Te{sub 2} have been studied systematically using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive spectrum (EDS), ultraviolet and visible spectrophotometer (UV–vis), and standard four-probe method. The studies reveal that the minor europium doping into CuIn{sub 1−x}Eu{sub x}Te{sub 2} could still stabilize the chalcopyrite structure in a solid solution of x=0.1. The lattice parameters are going up with increasing the content of europium in CuIn{sub 1−x}Eu{sub x}Te{sub 2} due to the size effect at In site. The structural refinement confirms that Eu partly substitutes for In and occupies the 4b crystal position. SEM morphologies show that the europium doping into CuIn{sub 1−x}Eu{sub x}Te{sub 2} can fine the grains from the largely agglomerated state to the uniformly separated state. The electrical resistivities of single phase CuIn{sub 1−x}Eu{sub x}Te{sub 2} follow a mixture model of hopping conductivity and variable range hopping conductivity. The absorption band-gaps of CuIn{sub 1−x}Eu{sub x}Te{sub 2} at room temperature tend to increase with increasing Eu content. CuIn{sub 1−x}Eu{sub x}Te{sub 2} might be a good candidate for photovoltaic cell. - Graphical abstract: CuIn{sub 0.9}Eu{sub 0.1}Te{sub 2} follows a mixture of hopping conductivity and variable range hopping conductivity mechanism. - Highlights: • Novel europium doped CuIn{sub 1−x}Eu{sub x}Te{sub 2}. • Potential application for devices and solar cells. • A mixture of hopping and variable range hopping conductivity mechanism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Analysis of a Novel Diffractive Scanning Wire Beam Position Monitor (BPM) for Discriminative Profiling of Electron Vs. X Ray Beams

Recent numerical studies of Free Electron Lasers (FELs) operating in the Self Amplified Spontaneous Emission (SASE) regime indicate a large sensitivity of the gain to the degree of transverse overlap (and associated phase coherence) between the electron and photon beams traveling down the insertion device. Simulations of actual systems imply that accurate detection and correction for this relative loss of overlap, rather than correction for the absolute departure of the electron beam from a fixed axis, is the preferred function of an FEL amplifier's Beam Position Monitor (BPM) and corrector systems. In this note we propose a novel diffractive BPM with the capability of simultaneously detecting and resolving the absolute (and relative) transverse positions and profiles of electron and x-ray beams co-propagating through an undulator. We derive the equations governing the performance of the BPM and examine its predicted performance for the SLAC Linac Coherent Light Source (LCLS), viz., for profiling multi-GeV electron bunches co-propagating with one-to-several-hundred keV x-ray beams. Selected research and development (r&d) tasks for fabricating and testing the proposed BPM are discussed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

Lead free CH{sub 3}NH{sub 3}SnI{sub 3} perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Lead free CH{sub 3}NH{sub 3}SnI{sub 3} perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH{sub 3}NH{sub 3}SnI{sub 3} film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH{sub 3}NH{sub 3}SnI{sub 3} films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH{sub 3}NH{sub 3}SnI{sub 3} can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt-silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100-800 nm in width and over 50 {mu}m in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current-voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material. - Graphical Abstract: TEM images, EDS, and electron diffraction pattern of bismuth nanobelts. Highlights: Black-Right-Pointing-Pointer Bismuth nanobelts in situ grown on silicon wafer were achieved. Black-Right-Pointing-Pointer Special bismuth-silicon nanostructure. Black-Right-Pointing-Pointer Potential application in sensitive magnetic sensor and other electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗