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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

High-performance room-temperature sodium–sulfur battery enabled by electrocatalytic sodium polysulfides full conversion

Room-temperature sodium–sulfur (RT-Na–S) batteries are highly desirable for grid-scale stationary energy storage due to their low cost; however, short cycling stability caused by the incomplete conversion of sodium polysulfides is a major issue for their application. Herein, we introduce an effective sulfiphilic host, gold nanodots decorated on hierarchical N-doped carbon microspheres (CN/Au/S), to achieve completely reversible conversion reactions in the S cathode by electrocatalyzing the low-kinetics conversion of Na 2 S 4 into NaS 2 (discharge process) or S (charge process). Besides, gold nanodots and N-doped carbon can increase the conductivity of the S cathode and provide strong polar–polar adsorption of sodium polysulfides to alleviate the shuttling effects. When serving as the cathode, the CN/Au/S composite can realize enhanced sulfur utilization, excellent cycling stability, and outstanding rate capability. This work deepens our understanding of the catalytic effect of gold atoms on sulfur molecules, opening a new avenue for cathode design and development of advanced RT-Na–S batteries.

25 ENERGY STORAGE↗
DOE OSTI2021

Gamma radiation-induced defects in KCl, MgCl 2 , and ZnCl 2 salts at room temperature

Room temperature post-irradiation measurements of diffuse reflectance and electron paramagnetic resonance spectroscopies were made to characterize the long-lived radiation-induced species formed from the gamma irradiation of solid KCl, MgCl 2 , and ZnCl 2 salts up to 100 kGy. The method used showed results consistent with those reported for electron and gamma irradiation of KCl in single crystals. Thermal bleaching of irradiated KCl demonstrated accelerated disaggregation of defect clusters above 400 K, due to decomposition of Cl 3 - . The defects formed in irradiated MgCl 2 comprised a mixture of Cl 3 - , F-centers, and Mg + associated as M-centers. Further, Mg metal cluster formation was also observed at 100 kGy, in addition to accelerated destruction of F-centers above 20 kGy. Irradiated ZnCl 2 afforded the formation of Cl 2 - due to its high ionization potential and crystalline structure, which decreases recombination. The presence of aggregates in all cases indicates the high diffusion of radicals and the predominance of secondary processes at 295 K. Additionally, thermal bleaching studies showed that chloride aggregates’ stability increases with the ionization potential of the cation present. The characterization of long-lived radiolytic transients of pure salts provides important information for the understanding of complex salt mixtures under the action of gamma radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Polymer-based microfluidic device for on-chip counter-diffusive crystallization and in situ X-ray crystallography at room temperature

Proteins are long chains of amino acid residues that perform a myriad of functions in living organisms, including enzymatic reactions, signalling, and maintaining structural integrity. Protein function is determined directly by the protein structure. X-ray crystallography is the primary technique for determining the 3D structure of proteins, and facilitates understanding the effects of protein structure on function. The first step towards structure determination is crystallizing the protein of interest. We have developed a centrifugally-actuated microfluidic device that incorporates the fluid handling and metering necessary for protein crystallization. Liquid handling takes advantage of surface forces to control fluid flow and enable metering, without the need for any fluidic or pump connections. Our approach requires only the simple steps of pipetting the crystallization reagents into the device followed by either spinning or shaking to set up counter-diffusive protein crystallization trials. The use of thin, UV-curable polymers with a high level of X-ray transparency allows for in situ X-ray crystallography, eliminating the manual handling of fragile protein crystals and streamlining the process of protein structure analysis. We demonstrate the utility of our device using hen egg white lysozyme as a model system, followed by the crystallization and in situ, room temperature structural analysis of the hub domain of calcium–calmodulin dependent kinase II (CaMKIIβ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Room temperature doping of Ln 3+ in perovskite nanoparticles: a halide exchange mediated cation exchange approach

This study presents a halide exchange mediated cation exchange strategy for a room temperature doping of trivalent lanthanide cations (Ln 3+ ) in cesium lead halide (CsPbX 3 ) nanoparticles (NPs). Post-synthetic addition of LnCl 3 [Ln = Nd, Sm, Eu, Tb, Dy, and Yb] to a solution of CsPbBr 3 NPs generates the corresponding lanthanide doped NPs which display host sensitized Ln 3+ emission. Structural and spectroscopic characterizations indicate a successful halide exchange and substitutional displacement of Pb 2+ by Ln 3+ . The effect of halide identity in controlling the Ln 3+ sensitization was also evaluated. Here, a photophysical framework is presented that can be used to predict the Ln 3+ sensitization in perovskite NPs semiempirically, thereby removing the constraints of trial and error in designing a perovskite NP-Ln 3+ host–guest combination.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Room temperature chemical transformation of SnSe to Ag 2 Se nanocrystals via cation exchange

Atomic-scale control of the chemical composition of semiconductor nanocrystals through a cation exchange reaction affords greater tunability in the design of multifunctional semiconductor composite nanocrystals. Here, we report a facile route to SnSe–Ag 2 Se composite nanocrystals using cation exchange at room temperature. Starting from freshly synthesized SnSe nanorods, we leverage the strong distortion of the Sn 2+ octahedral coordination in SnSe and the hard–soft acid–base (HSAB) principle, to promote the exchange of an Sn 2+ ion with two Ag + ions in methanol leading to Ag 2 Se/SnSe nanocomposites. The morphology and chemistry of the nanocrystals evolve from nanorods with SnSe@Ag 2 Se (core@shell) structures for SnSe-rich composites to nanorods with a random distribution of Sn 2+ and Ag + ions for nearly equimolar composites, and finally to irregular fragmented nanocrystals for Ag 2 Se-rich composites. A mechanistic understanding of the observed morphology evolution is discussed using the change in the cation coordination from octahedral (Sn 2+ ) to tetrahedral (Ag + ) geometry and the accompanying expansion of the hcp Se 2– sublattice. Interestingly, the synthesized composite nanocrystals exhibit an optical band gap value tunable within a wide energy range by increasing the Ag 2 Se/SnSe ratio. This work provides a useful and facile strategy to modify the optical behavior of semiconductor nanomaterials, which can be leveraged for the design of better optical and/or photovoltaic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Room temperature crystal field splitting of curium resolved by circularly polarized luminescence spectroscopy

Coordination of Cm(III) with a chiral decadentate ligand N,N,N',N'-tetrakis[(6-carboxypyridin-2-yl)methyl]-1,2-diaminocyclohexane (tpadac) generated complexes with strong luminescence allowing for the unprecedented measurement of well-resolved Cm(III) circularly polarized luminescence spectra. Quantitative resolution of the electronic structure of the [Cm(tpadac)][K] complexes was achieved at room temperature, highlighting the strength of the combination of luminescence and circularly polarized luminescence spectroscopies to unravel the fundamental electronic structure of Cm(III). These results are a clear demonstration that these spectroscopies are powerful yet simple tools for the fundamental understanding of electronic structure, which opens the door to future investigations of other Cm(III) complexes in geometries relevant to nuclear applications, and even other 5f-elements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

350 ps Ultrafast room-temperature scintillation realized on CsPbBr 3 -based single crystals via Br 2 over-doping

Ultrafast scintillators are essential for next-generation radiation detection, positron emission tomography, and high-speed medical imaging. All-inorganic CsPbBr 3 perovskites are attractive candidates because of their high stopping power, and excellent optical quality, yet their long carrier lifetimes result in slow scintillation responses on the order of hundreds of nanoseconds. Here, we demonstrate that controlled over-doping with Br 2 produces CsPbBr 3.03 single crystals with sub-nanosecond scintillation at room temperature while preserving crystal quality. Single crystals grown by the Bridgman method exhibit high transparency and maintain the orthorhombic perovskite structure. Br 2 over-doping induces a slight lattice expansion (about 0.42% increase in unit-cell volume) while maintaining the orthorhombic perovskite phase and high optical transparency. Optical absorption reveals a slight redshift of the absorption edge after Br 2 introduction, indicating a modified defect landscape. Time-resolved photoluminescence and radioluminescence measurements show that Br 2 doping creates dense and efficient recombination centers that reduce the scintillation decay time from more than 100 ns in undoped crystals to 350 ps under 5.486 MeV α-particle excitation, and the scintillation decay time decreases by two orders of magnitude. The doped crystals also achieve a spatial resolution of 12 lp mm −1 in X-ray imaging. These results reveal a defect-engineering route for achieving ultrafast scintillation in halide perovskites and highlight the potential of Br 2 -modified CsPbBr 3 for fast timing applications.

Li, Zongxiao [Chinese Academy of Sciences (CAS), N↗
DOE OSTI2024

Determination of electron-hole pair creation energy in Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 quaternary semiconductor for room-temperature gamma-ray detection

We report the first-time measurement of the electron-hole pair (ehp) creation energy (W ehp ) in novel Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large-volume room-temperature gamma-ray detectors due to its excellent compositional homogeneity with highly reduced defects, high-Z (atomic number) constituents, wide bandgap (1.6 eV), and superior charge transport properties. Despite a great deal of study of the material and device properties since its inception, the W ehp in CZTS has not been measured experimentally. Accurate determination of W ehp is essential for calibration of the spectrometer and other theoretical calculations. In this study we have used an absolute calibration approach, which is based on an iterative approach that yields the Wehp as the best-fit parameter. Using a 241 Am alpha emitting radioisotope and a planar CZTS detector, the Wehp in CZTS was calculated to be 4.47 eV. The obtained value has been validated by accurately predicting the peak energy for gamma rays emitted by a 137 Cs source and read by a CZTS detector with different dimensions. The dependences of the calculated W ehp value on the detector dimensions, type of interaction, and effect of charge trapping are also discussed.

42 ENGINEERING↗
DOE OSTI2010

Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

We report the observation of enhanced oxidation on silicon and porous silicon samples exposed in air ambient to high-dose-rate 10 keV x-ray radiation at room temperature. The evolution of the radiation-induced oxide growth is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared (FTIR) spectroscopy shows the emergence of Si-O-Si stretching modes and corresponding suppression of SiH{sub x} and Si-Si modes in the porous silicon samples. The radiation response depends strongly on initial native oxide thickness and Si-H surface species. The enhanced oxidation mechanism is attributed to photoinduced oxidation processes wherein energetic photons are used to dissociate molecular oxygen and promote the formation of more reactive oxygen species.

36 MATERIALS SCIENCE↗
DOE OSTI2011

A Quantitative Analysis of Room Temperature Recrystallization Kinetics in Electroplated Copper Films using High Resolution X-ray Diffraction

Time-resolved in situ x-ray diffraction measurements were used to study the room-temperature recrystallization kinetics of electroplated copper thin films with thicknesses between 400 and 1000 nm. The thinnest films exhibited limited recrystallization and subsequent growth of grains, while recrystallized grains in the thicker films grew until all as-plated microstructure was consumed. For all films, recrystallized grains that belonged to the majority texture component, <111>, started growing after the shortest incubation time. These grains exhibited volumetric growth until they achieved the film thickness. After this point the growth mode became planar, with the <111>-type grains growing in the plane of the film. Grains with the <111> direction normal to the film surface started growing after the <111>-type grains switched to planar growth. However, the planar growth of this texture component finished at the same time as the growth of the <111> grains. Profile fitting of the 111 peak permitted the separation of the diffraction signals from recrystallized and as-plated grain populations. The average strains in these two populations, calculated from the peak position of the corresponding {l_brace}111{r_brace} reflections, were different, indicating a heterogeneous stress state within this texture component. The increasing volume fraction of recrystallized <111> grains with time was monitored via the variation in the diffracted intensity. This variation could be represented by the Johnson-Mehl-Avrami-Kolmogorov model.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Characteristics of ZnO Wafers Implanted with 60 keV Sn{sup +} Ions at Room Temperature and at 110 K

ZnO wafers implanted with 60 keV Sn{sup +} ions at room temperature (RT) and at 110 K are investigated by means of X-ray diffraction (XRD) and photoluminescence (PL) techniques. The effect of implantation temperature is evident in the XRD and PL data. A yellow-orange (YO) band near 600 nm appears in the PL spectra of the ZnO wafers implanted to the doses of 4x10{sup 14} and 8x10{sup 14} ions/cm{sup 2} at RT. The intensity of this band increases and the peak position blue-shifts after illumination of the samples with the 325 nm line of a He-Cd laser. The PL data suggests that the CB (conduction band){yields}V{sub O}{sup +} and Zn{sub i}{sup +{yields}}V{sub Zn}{sup -} transitions contribute to the photoemission of the YO band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Irradiation induced ferromagnetism at room temperature in TiO{sub 2} thin films: X-ray magnetic circular dichroism characterizations

We report on the room temperature ferromagnetism in the swift heavy ion (SHI) irradiated TiO{sub 2} thin films by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) experiments at the O K and Ti L{sub 3,2} absorption edges. The XAS/XMCD measurements provide direct evidence of magnetic polarization of the O 2p and Ti 3d orbitals. The unquenched orbital magnetic moment within the O 2p shell is ferromagnetically coupled to the neighboring Ti moments, which illustrates the intense hybridization of the O 2p and Ti 3d orbitals induced by SHI irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

Amorphous hafnium oxide (HfO{sub x}) is deposited by sputtering while achieving a very high k{approx}30. Structural characterization suggests that the high k is a consequence of a previously unreported cubiclike short range order in the amorphous HfO{sub x} (cubic k{approx}30). The films also possess a high electrical resistivity of 10{sup 14} {Omega} cm, a breakdown strength of 3 MV cm{sup -1}, and an optical gap of 6.0 eV. Deposition at room temperature and a high deposition rate ({approx}25 nm min{sup -1}) makes these high-k amorphous HfO{sub x} films highly advantageous for plastic electronics and high throughput manufacturing.

36 MATERIALS SCIENCE↗