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At least 973 records · Page 54

All sources NASA NTRS DOE OSTI

NASA NTRS2006

Highly Efficient Multilayer Thermoelectric Devices

Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron-acceptor (p)-doped and electron-donor (n)-doped, nanometer- thick semiconductor layers.

Boufelfel, Ali↗

DOE OSTI2021

Deadband Voltage Control and Power Buffering for Extreme Fast Charging Station

Voltage fluctuation is one of the most common challenges that electric vehicle charging station (EVCS) may introduce to the power grid. Local reactive power compensation (Q-compensation) capability of bi-directional electric vehicle (EV) chargers can mitigate the steady-state voltage violations caused by the EV charging itself or changes in the neighboring loads. Power buffering, using energy storage system (ESS), can be utilized to address the voltage transients (sags and swells) as a result of EV charging at the EVCS. To address PI controller’s ‘hunting’ issue, this paper proposes a Q-sign triggered deadband voltage control (V-control) method at the point of common coupling (PCC). In addition, to ensure the ramp rate of EV charging is within the allowable limits set forth by the grid code, a ramp rate control is proposed that uses the ESS as a ‘power buffer’. Lastly, different from most reported work in the literature where no explicit limit of the power electronic converters (PECs) is considered, this work considers a reasonable apparent power capacity limit of the PECs when achieving the V-control. This limit also affects the amount of active power that can be obtained from the grid, and subsequently may require ESS to function as ‘load sharing’ device to provide supplemental active power to satisfy EV load. A case study simulated in MATLAB (interfaced with PLECS) is presented to demonstrate the effectiveness of the proposed approaches for EVCS operation.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2024

Wind turbine performance enhancement with minimal structural load penalty: A design philosophy

The performance benefits of using tip devices on wind turbines has been well-documented. However, previous studies show that adding blade tip devices such as winglets leads to a significant increase in blade root bending moment, potentially requiring structural reinforcement with cost and weight drawbacks. A new and unique design philosophy for retrofit blade tip devices for wind turbines is presented. By balancing generated aerodynamic and centrifugal loads, these devices offer an increase in power production without the need for structural reinforcement. Predicted performance and cost benefits of using retrofit blade tip devices on the National Renewable Energy Laboratory 5 MW reference wind turbine are shown. Finally, the addition of blade tip devices resulted in significant improvements in the coefficient of power (C p ) and annual energy production (AEP).

17 WIND ENERGY↗

NASA NTRS1984

K-band FET amplifier for satellite downlink

State-of-the-art performance is demonstrated with solid-state amplifiers in K-band. The amplifier provides 8.2 watts of power with 39 dB gain over a frequency band of 1.4 GHz. Nonlinearity analyses of solid-state amplifiers suggest that system performance can be improved significantly by using an FET amplifier. Preliminary investigations reveal that the solid-state amplifiers can be space-qualified and can be expected to replace the TWTA in many communication links in the near future. It is pointed out that with improvements in device technology, the power, bandwidth and efficiency of solid-state amplifiers using FETs can be further improved. With FETs operating at a junction temperature of less than 125 C, solid-state amplifiers are inherently reliable, indicating a ten-year mean time to failure.

Goel, J.↗

NASA NTRS2010

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Patterson, Richard L.↗

DOE OSTI2024

MODELING, IMPLEMENTATION AND CONTROL OF A CVT BASED PTO FOR A SMALL SCALE MHK-TURBINE IN LOW FLOW SPEED OPERATION

Modeling, implementation, field testing and control of a power takeoff (PTO) device equipped with a ball-type continuously variable transmission (B-CVT) for a small marine hydrokinetic (MHK) turbine deployed from a floating unmanned autonomous mobile catamaran platform is described. The turbine is a partially submerged multi-blade undershot waterwheel (USWW). A validated numerical torque model for the MHK turbine has been derived and a speed controller has been developed, implemented and tested in the field. The dependance of the power generated as a function of number and submergence level of turbine blades has been investigated and the number of blades that maximizes power production is determined. Bench and field testing in support of characterizing the power conversion capabilities of MHK turbine and PTO are described. Detailed results of the final torque and power coefficient models, the controls architecture, and the MHK turbine performance with varying numbers of blades are provided.

Pimentel, Hugo↗

NASA NTRS2010

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Patterson, Richard↗

DOE OSTI2023

The Role of SnO2 Processing on Ionic Distribution in Double-Cation-Double Halide Perovskites

Moving toward a future of efficient, accessible, and less carbon-reliant energy devices has been at the forefront of energy research innovations for the past 30 years. Metal-halide perovskite (MHP) thin films have gained significant attention due to their flexibility of device applications and tunable capabilities for improving power conversion efficiency. Serving as a gateway to optimize device performance, consideration must be given to chemical synthesis processing techniques. Therefore, how does common substrate processing techniques influence the behavior of MHP phenomena such as ion migration and strain? Here, we demonstrate how a hybrid approach of chemical bath deposition (CBD) and nanoparticle SnO2 substrate processing significantly improves the performance of (FAPbI3)0.97(MAPbBr3)0.03 by reducing micro-strain in the SnO2 lattice, allowing distribution of K+ from K-Cl treatment of substrates to passivate defects formed at the interface and produce higher current in light and dark environments. X-ray diffraction reveals differences in lattice strain behavior with respect to SnO2 substrate processing methods. Through use of conductive atomic force microscopy (c-AFM), conductivity is measured spatially with MHP morphology, showing higher generation of current in both light and dark conditions for films with hybrid processing. Additionally, time-of-flight secondary ionization mass spectrometry (ToF-SIMS) observed the distribution of K+ at the perovskite/SnO2 interface, indicating K+ passivation of defects to improve the power conversion efficiency (PCE) and device stability. We show how understanding the role of ion distribution at the SnO2 and perovskite interface can help reduce the creating of defects and promote a more efficient MHP device.

conductive atomic force microscopy↗

NASA NTRS1992

An improved computational technique for calculating electromagnetic forces and power absorptions generated in spherical and deformed body in levitation melting devices

An improved computational technique for calculating the electromagnetic force field, the power absorption and the deformation of an electromagnetically levitated metal sample is described. The technique is based on the volume integral method, but represents a substantial refinement; the coordinate transformation employed allows the efficient treatment of a broad class of rotationally symmetrical bodies. Computed results are presented to represent the behavior of levitation melted metal samples in a multi-coil, multi-frequency levitation unit to be used in microgravity experiments. The theoretical predictions are compared with both analytical solutions and with the results of previous computational efforts for the spherical samples and the agreement has been very good. The treatment of problems involving deformed surfaces and actually predicting the deformed shape of the specimens breaks new ground and should be the major usefulness of the proposed method.

Zong, Jin-Ho↗

NASA NTRS1992

An Improved Computational Technique for Calculating Electromagnetic Forces and Power Absorptions Generated in Spherical and Deformed Body in Levitation Melting Devices

An improved computational technique for calculating the electromagnetic force field, the power absorption and the deformation of an electromagnetically levitated metal sample is described. The technique is based on the volume integral method, but represents a substantial refinement; the coordinate transformation employed allows the efficient treatment of a broad class of rotationally symmetrical bodies. Computed results are presented to represent the behavior of levitation melted metal samples in a multi-coil, multi-frequency levitation unit to be used in microgravity experiments. The theoretical predictions are compared with both analytical solutions and with the results or previous computational efforts for the spherical samples and the agreement has been very good. The treatment of problems involving deformed surfaces and actually predicting the deformed shape of the specimens breaks new ground and should be the major usefulness of the proposed method.

Zong, Jin-Ho↗

NASA NTRS2004

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Freeman, Jon C.↗

DOE OSTI2020

Wave energy conversion incorporating actuated geometry

Described herein are wave energy conversion systems including actuated geometry components. An example system may include at least one body portion configured to transfer wave energy to a power take off device, and at least one actuated geometry component that is connected to the at least one body portion, the at least one actuated geometry component operable to modify a geometric profile of the system.

16 TIDAL AND WAVE POWER↗

NASA NTRS1993

A dual output pressure, high reliability, long storage life gas delivery vessel assembly

A Gas Vessel Assembly has been developed that delivers purified, very low moisture content gas at two different output pressures. High pressure gas is delivered at up to 6,700 psi, and low pressure gas regulated to 130 psi is also delivered via a second outlet over a wide range of flow rates. The device is extremely lightweight (less than 1 lb) and compact, affords maximum mechanical integrity, high reliability (0.9999 at 95 percent confidence level), and offers extremely long storage life. Specialized design and fabrication techniques are employed that guarantee gas purity and negligible leakage for more than 20 years, in widely varying conditions of storage temperature, humidity, altitude, and vibration environments. The technology offers unique advantages in fast, high pressure discharge applications. For example, when combined with a cryostat, cryogenic temperatures can be achieved such as those used in missile seeker technology. The technology has many additional applications such as: emergency power sources for safety devices such as those needed in nuclear power plants, refineries, collision cushioning devices, superconductor cooling devices, emergency egress systems, miniature mechanical devices that employ gas bearings, and other areas where long storage, extremely high reliability and/or high energy density sources are required.

Maya, Isaac↗

NASA NTRS2011

Sub-Shot Noise Power Source for Microelectronics

Low-current, high-impedance microelectronic devices can be affected by electric current shot noise more than they are affected by Nyquist noise, even at room temperature. An approach to implementing a sub-shot noise current source for powering such devices is based on direct conversion of amplitude-squeezed light to photocurrent. The phenomenon of optical squeezing allows for the optical measurements below the fundamental shot noise limit, which would be impossible in the domain of classical optics. This becomes possible by affecting the statistical properties of photons in an optical mode, which can be considered as a case of information encoding. Once encoded, the information describing the photon (or any other elementary excitations) statistics can be also transmitted. In fact, it is such information transduction from optics to an electronics circuit, via photoelectric effect, that has allowed the observation of the optical squeezing. It is very difficult, if not technically impossible, to directly measure the statistical distribution of optical photons except at extremely low light level. The photoelectric current, on the other hand, can be easily analyzed using RF spectrum analyzers. Once it was observed that the photocurrent noise generated by a tested light source in question is below the shot noise limit (e.g. produced by a coherent light beam), it was concluded that the light source in question possess the property of amplitude squeezing. The main novelty of this technology is to turn this well-known information transduction approach around. Instead of studying the statistical property of an optical mode by measuring the photoelectron statistics, an amplitude-squeezed light source and a high-efficiency linear photodiode are used to generate photocurrent with sub-Poissonian electron statistics. By powering microelectronic devices with this current source, their performance can be improved, especially their noise parameters. Therefore, a room-temperature sub-shot noise current source can be built that will be beneficial for a very broad range of low-power, low-noise electronic instruments and applications, both cryogenic and room-temperature. Taking advantage of recent demonstrations of the squeezed light sources based on optical micro-disks, this sub-shot noise current source can be made compatible with the size/power requirements specific of the electronic devices it will support.

Strekalov, Dmitry V.↗

NASA NTRS2004

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Lebron-Velilla, Ramon C.↗

NASA NTRS2003

Nanostructured Materials Development for Space Power

There have been many recent advances in the use of nanostructured materials for space power applications. In particular, the use of high purity single wall nanotubes holds promise for a variety of generation and storage devices including: thin film lithium ion batteries, microelectronic proton exchange membrane (PEM) fuel cells, polymeric thin film solar cells, and thermionic power supplies is presented. Semiconducting quantum dots alone and in conjunction with carbon nanotubes are also being investigated for possible use in high efficiency photovoltaic solar cells. This paper will review some of the work being done at RIT in conjunction with the NASA Glenn Research Center to utilize nanomaterials in space power devices.

Raffaelle, Ryne P.↗

DOE OSTI2023

Validation of Microgrid Algorithms using At-Scale Simulation and Emulation Real-Time (ASSERT) Framework

This paper presents a novel framework for validating microgrid algorithms using a At-Scale Simulation and Emulation Real-Time (ASSERT) setup. The proposed universal microgrid validation framework was developed at Advanced Research on Integrated Energy Systems (ARIES) platform at National Renewable Energy Laboratory in Golden, Colorado, USA. As the number of intercommunicating devices grow in power systems, along with more integration of inverter-based resources, developing and validating microgrid operation and control algorithms is becoming complex and time-consuming task. The ASSERT framework is designed to provide a comprehensive, accurate, and efficient solution for validating microgrid algorithms. It combines at-scale simulations and real-time emulation to create a virtual environment that closely mimics the behavior of a physical microgrids which are characteristic of future smart distribution systems, such as: (1) increasing variability in the physical size of new energy technologies; (2) requiring control large numbers of interconnected devices, and (3) integrating diverse technologies that have not previously worked together. The paper describes the technical details of the ASSERT framework, its validation process, and its benefits over traditional validation methods. The framework's ability to validate the performance of various algorithms is demonstrated through a case study, which shows that it can effectively identify the weaknesses of an algorithm and optimize its performance. Overall, the ASSERT framework is a promising tool that can significantly enhance the development and validation of microgrid algorithms, leading to more reliable and efficient microgrid operation.

at-scale↗

DOE OSTI2020

Merged-Element Transmon

Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb–amorphous-Si–Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state-dependent shift in the low-power regime. The device also demonstrates the single-photon and multiphoton transitions that represent a weakly anharmonic system in two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. Here, a participation-ratio analysis identifies the dielectric loss of the amorphous-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence for relatively small device dimensions when implemented with a low-loss, epitaxially grown, and lattice-matched trilayer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗