Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Materials for Devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Design, fabrication and test of prototype furnace for continuous growth of wide silicon ribbon

A program having the overall objective of growing wide, thin silicon dendritic web crystals quasi-continuously from a semi-automated facility is discussed. The design considerations and fabrication of the facility as well as the test and operation phase are covered; detailed engineering drawings are included as an appendix. During the test and operation phase of the program, more than eighty growth runs and numerous thermal test runs were performed. At the conclusion of the program, 2.4 cm wide web was being grown at thicknesses of 100 to 300 micrometers. As expected, the thickness and growth rate are closely related. Solar cells made from this material were tested at NASA-Lewis and found to have conversion efficiencies comparable to devices fabricated from Czochralski material.

Duncan, C. S.↗
NASA NTRS2006

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗
NASA NTRS2007

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗
DOE OSTI2020

Materials Discovery

Advanced energy technologies are enabled by the constituent materials found in functional devices. Scientists at the National Renewable Energy Laboratory (NREL) are leaders in discovering the new materials that provide the foundation for future innovations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Reducing Surface Recombination Velocity of Methylammonium-Free Mixed-Cation Mixed-Halide Perovskites via Surface Passivation

We control surface recombination in the mixed-cation, mixed-halide perovskite, FA0.83Cs0.17Pb(I0.85Br0.15)3, by passivating nonradiative defects with the polymerizable Lewis base (3-aminopropyl)trimethoxysilane (APTMS). We demonstrate average minority carrier lifetimes >4 µs, nearly single exponential monomolecular photoluminescence decays, and high external photoluminescence quantum efficiencies (>20%, corresponding to ~97% of the maximum theoretical quasi-Fermi-level splitting) at low excitation fluence. We confirm both the composition and valence band edge position of the FA0.83Cs0.17Pb(I0.85Br0.15)3 perovskite using multi-institutional, cross-validated, X-ray photoelectron spectroscopy and UV photoelectron spectroscopy measurements. We extend the APTMS surface passivation to higher bandgap double-cation (FA and Cs) compositions (1.7, 1.75, and 1.8 eV) as well as the widely used triple-cation (FA, MA, and Cs) composition. Finally, we demonstrate that the average surface recombination velocity decreases from ~1000 to ~10 cm/s post APTMS passivation for FA0.83Cs0.17Pb(I0.85Br0.15)3. Our results demonstrate that surface-mediated recombination is the primary nonradiative loss pathway in many methylammonium (MA)-free mixed-cation mixed-halide films with a range of different bandgaps, which is a problem observed for a wide range of perovskite active layers and reactive electrical contacts. Our study also provides insights to develop passivating molecules that help reduce surface recombination in MA-free mixed-cation mixed-halide films and indicates that surface passivation and contact engineering will enable near-theoretical device efficiencies with these materials.

14 SOLAR ENERGY↗
DOE OSTI2022

Quantum-size-tuned heterostructures enable efficient and stable inverted perovskite solar cells

The energy landscape of reduced-dimensional perovskites (RDPs) can be tailored by adjusting their layer width (n). Recently, 2D/3D heterostructures containing n = 1 and 2 RDPs have produced PSCs with > 25% power conversion efficiency (PCE). Unfortunately, this method does not translate to inverted PSCs due to electron blocking at the 2D/3D interface. Here we report a method to increase the layer width of RDPs in 2D/3D heterostructures in order to address this problem. We discover that bulkier organics form 2D heterostructures more slowly, resulting in wider RDPs; and that small modifications to ligand design induce preferential growth of n ≥ 3 RDPs. Levering these insights, we developed efficient inverted PSCs (certified 23.91% quasi-steady state efficiency). Furthermore, unencapsulated devices operate at room temperature and ~50% relative humidity for over 1000 hrs without loss of PCE; and, when subjected to ISOS-L3 accelerated aging encapsulated devices retain 92% of PCE after 500 hrs.

14 SOLAR ENERGY↗
DOE OSTI2020

The Materials Plasma Exposure eXperiment: Status of the Physics Basis Together With the Conceptual Design and Plans Forward

The Materials Plasma Exposure eXperiment (MPEX) is a linear plasma device that will address the plasma–material interaction (PMI) science for future fusion reactors and will enable testing of plasma-facing components (PFCs). It is designed as a steady-state device eventually delivering an ion fluence of up to 10 31 m -2 to the target. The device will be designed to handle neutron-activated materials. These capabilities should push the technical readiness level of PFCs up to six for some end-of-life aspects. In order to achieve the relevant plasma conditions, as they are expected in future fusion reactor divertors, MPEX will utilize a novel plasma source concept. This plasma source concept uses a high-power helicon (200 kW, 13.56 MHz), an electron cyclotron heating (ECH) system, which will heat electrons via electron Bernstein wave (EBW) heating (about 400 kW, 70 GHz), and an ion cyclotron heating (ICH) system (400 kW, 6–9 MHz). The physics basis for this plasma source concept including the heating physics and transport is based on experiments on Proto-MPEX. An overview of the experimental results and the physics basis will be given. The physics basis directly translates into functional requirements of MPEX and the conceptual design. The status of the conceptual design of MPEX will be shown.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Power transport efficiency during O-X-B 2nd harmonic electron cyclotron heating in a helicon linear plasma device

The principal objective of this work is to report on the power coupled to a tungsten target in the prototype-material plasma exposure experiment device during oblique injection of a microwave beam (<70 kW at 28 GHz) into a high-power (~100 kW at 13.56 MHz) over-dense (${n_e} > 1 \times {10^{19}}{\text{ }}{{\text{m}}^{ - 3}}$) deuterium helicon plasma column. The experimental setup, electron heating system, electron heating scheme, and IR thermographic diagnostic for quantifying the power transport is described in detail. It is demonstrated that the power transported to the target can be effectively controlled by adjusting the magnetic field profile. Using this method, heat fluxes up to 22 MW m -2 and power transport efficiencies in the range of 17%–20% have been achieved using 70 kW of microwave power. It is observed that most of the heat flux is confined to a narrow region at the plasma periphery. Ray-tracing calculations are presented which indicate that the power is coupled to the plasma electrons via an O-X-B mode conversion process. Calculations indicate that the microwave power is absorbed in a single pass at the plasma periphery via collisions and in the over-dense region via 2nd harmonic cyclotron resonance of the electron Bernstein wave. The impact of our results is discussed in the context of MPEX.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Edge treatment for spurious mode suppression in thin-film lithium niobate resonators

Abstract Thin-film lithium niobate is an attractive material for RF acoustic devices because of its high electromechanical coupling. However, due to the large coupling and the high anisotropy, thin-film lithium niobate resonators are prone to accidental resonances called spurious modes. These modes compromise the frequency response of the resonators, limiting their use in filter and oscillator applications. In this work, we present a novel method of spurious mode suppression through a special edge treatment etch process. Two thin-film lithium niobate resonators were fabricated, one with smooth sidewalls and one with the edge treatment. It was found that the edge-treated resonators show a weaker spurious mode response. This is potentially a new way to mitigate spurious resonances, a major issue in lithium niobate Lamb wave devices.

36 MATERIALS SCIENCE↗
NASA NTRS2014

Alumina Paste Sublimation Suppression Barrier for Thermoelectric Device

Alumina as a sublimation suppression barrier for a Zintl thermoelectric material in a thermoelectric power generation device operating at high temperature, e.g. at or above 1000K, is disclosed. The Zintl thermoelectric material may comprise Yb.sub.14MnSb.sub.11. The alumina may be applied as an adhesive paste dried and cured on a substantially oxide free surface of the Zintl thermoelectric material and polished to a final thickness. The sublimation suppression barrier may be finalized by baking out the alumina layer on the Zintl thermoelectric material until it becomes substantially clogged with ytterbia.

Paik, Jong-Ah↗
NASA NTRS1993

Defects in electro-optically active polymer solids

There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).

Martin, David C.↗
DOE OSTI2021

Wake-up and fatigue mechanisms in ferroelectric Hf 0.5 Zr 0.5 O 2 films with symmetric RuO 2 electrodes

In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO 2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 10 3 bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 10 8 cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations and domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO 2 -based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr 3

Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr 3 , which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths, and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ~100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Electron and hole mobility of rutile GeO 2 from first principles: An ultrawide-bandgap semiconductor for power electronics

Rutile germanium dioxide (r-GeO 2 ) is a recently predicted ultrawide-bandgap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon coupling in r-GeO 2 and predict its phonon-limited electron and hole mobilities as a function of temperature and crystallographic orientation. The calculated carrier mobilities at 300 K are μ elec , ⊥ c → = 244 cm 2 V –1 s –1 , μ elec , ∥ c → = 377 cm 2 V –1 s –1 , μ hole , ⊥ c → = 27 cm 2 V –1 s –1 , and μ hole , ∥ c → = 29 cm 2 V –1 s –1 . At room temperature, carrier scattering is dominated by the low-frequency polar-optical phonon modes. The predicted Baliga figure of merit of n -type r-GeO 2 surpasses several incumbent semiconductors such as Si, SiC, GaN, and β -Ga 2 O 3 , demonstrating its superior performance in high-power electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1996

Sol-gel Technology and Advanced Electrochemical Energy Storage Materials

Advanced materials play an important role in the development of electrochemical energy devices such as batteries, fuel cells, and electrochemical capacitors. The sol-gel process is a versatile solution for use in the fabrication of ceramic materials with tailored stoichiometry, microstructure, and properties. This processing technique is particularly useful in producing porous materials with high surface area and low density, two of the most desirable characteristics for electrode materials. In addition,the porous surface of gels can be modified chemically to create tailored surface properties, and inorganic/organic micro-composites can be prepared for improved material performance device fabrication. Applications of several sol-gel derived electrode materials in different energy storage devices are illustrated in this paper. V2O5 gels are shown to be a promising cathode material for solid state lithium batteries. Carbon aerogels, amorphous RuO2 gels and sol-gel derived hafnium compounds have been studied as electrode materials for high energy density and high power density electrochemical capacitors.

Chung-tse Chu↗