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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Coulomb blockade effects in a topological insulator grown on a high- T c cuprate superconductor

The evidence for proximity-induced superconductivity in heterostructures of topological insulators and high- T c cuprates has been intensely debated. We use molecular-beam epitaxy to grow thin films of topological insulator Bi 2 Te 3 on a cuprate Bi 2 Sr 2 CaCu 2 O 8+x , and study the surface of Bi 2 Te 3 using low-temperature scanning tunneling microscopy and spectroscopy. In few unit-cell thick Bi 2 Te 3 films, we find a V-shaped gap-like feature at the Fermi energy in d I /d V spectra. By reducing the coverage of Bi 2 Te 3 films to create nanoscale islands, we discover that this spectral feature dramatically evolves into a much larger hard gap, which can be understood as a Coulomb blockade gap. This conclusion is supported by the evolution of d I /d V spectra with the lateral size of Bi 2 Te 3 islands, as well as by topographic measurements that show an additional barrier separating Bi 2 Te 3 and Bi 2 Sr 2 CaCu 2 O 8+x . We conclude that the prominent gap-like feature in d I /d V spectra in Bi 2 Te 3 films is not a proximity-induced superconducting gap. Instead, it can be explained by Coulomb blockade effects, which take into account additional resistive and capacitive coupling at the interface. Our experiments provide a fresh insight into the tunneling measurements of complex heterostructures with buried interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Nanoscale studies of electric field effects on monolayer 1T′-WTe2

Abstract Monolayer 1 T′-WTe 2 is a quantum spin Hall insulator with a gapped 2D-bulk and gapless helical edge states persisting to temperatures ~100 K. Despite the far-ranging interest, the magnitude of the bulk gap, the effect of gating on the 2D-band structure, as well the role interactions are not established. In this work we use STM spectroscopy to measure the intrinsic bulk gap of monolayer 1 T′-WTe 2 and show that gate induced electric fields cause large changes of the gap magnitude. Our first-principles DFT-derived tight-binding model reveal that a combination of spatial localization of the conduction and valance bands and Rashba-like spin-orbit coupling leads to a gating induced spin-splitting of the 2D-bulk bands in the tens of meV, thereby reducing the band gap. Our work explains the large sensitivity of the band structure to electric fields and suggests a new avenue for realizing proximity induced non-trivial superconductivity in monolayer 1 T′-WTe 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

CHUWD-H v1.0: a comprehensive historical hourly weather database for U.S. urban energy system modeling

Reliable and continuous meteorological data are crucial for modeling the responses of energy systems and their components to weather and climate conditions, particularly in densely populated urban areas. However, existing long-term datasets often suffer from spatial and temporal gaps and inconsistencies, posing great challenges for detailed urban energy system modeling and cross-city comparison under realistic weather conditions. Here we introduce the Historical Comprehensive Hourly Urban Weather Database (CHUWD-H) v1.0, a 23-year (1998-2020) gap-free and quality-controlled hourly weather dataset covering 550 weather station locations across all urban areas in the contiguous United States. CHUWD-H v1.0 synthesizes hourly weather observations from stations with outputs from a physics-based solar radiation model and a reanalysis dataset through a multi-step gap filling approach. A 10-fold Monte Carlo cross-validation suggests that the accuracy of this gap filling approach surpasses that of conventional gap filling methods. Designed primarily for urban energy system modeling, CHUWD-H v1.0 should also support historical urban meteorological and climate studies, including the validation and evaluation of urban climate modeling.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Pseudospin-triplet pairing in iron-chalcogenide superconductors

Abstract Understanding the pairing symmetry is a crucial theoretical aspect in the study of unconventional superconductivity for interpreting experimental results. Here we study superconductivity of electron systems with both spin and pseudospin-1/2 degrees of freedom. By solving linearized gap equations, we derive a weak coupling criterion for the even-parity spin-singlet pseudospin-triplet pairing. It can generally mix with the on-site s -wave pairing since both of them belong to the same symmetry representation ( A 1 g ) and their mixture could naturally give rise to anisotropic intra-band pairing gap functions with or without nodes. This may directly explain why some of the iron-chalcogenide superconductors are fully gapped (e.g. FeSe thin film) and some have nodes (e.g. LaFePO and LiFeP). We also find that the anisotropy of gap functions can be enhanced when the principal rotation symmetry is spontaneously broken in the normal state such as nematicity, and the energetic stabilization of pseudospin-triplet pairings indicates the coexistence of nematicity and superconductivity. This could be potentially applied to bulk FeSe, where gap anisotropy has been experimentally observed.

Physics↗
DOE OSTI2022

Dopant Compensation within the Intrinsic Poly-Si Isolation Region in Poly-Si/SiOx Passivated IBC Si Solar Cells

We report on the effect of dopant compensation within intrinsic poly-Si regions between p- and n-type fingers of poly-Si/SiOx passivated interdigitated back contact (IBC) solar cells using intrinsic poly-Si as the isolation region between the doped poly-Si fingers. First, we show that dopants from the doped fingers contaminate the intrinsic gap, resulting in doping of the entire intrinsic gap and overlap of the dopant tails from each finger. Next, we show that despite this doping across the gap, shunting between the doped fingers does not occur. We show that this is a result of trap-assisted compensation creating a highly resistive intrinsic region, preventing shunt. We simulate shunt resistance across the gap based on local carrier concentration and deep trap density. We show that trap defects within the poly-Si enhance compensation between the dopant tails. We experimentally confirm these predictions by scanning spreading resistance microscopy of the gap showing ~20 um domain with resistivity ~10^7 ..omega.. cm. Additionally, Kelvin probe force microscopy are compared to finite element simulations which result in the same approximate shape for potential profile, indicating diode behavior across the isolation region. These results demonstrate the powerful effect that trap defects have within the poly-Si isolation region and suggest that precision patterning is not as essential as once thought.

dopant compensation↗
DOE OSTI2025

Superfluid weight cross-over and critical temperature enhancement in singular flat bands

Nonanalytic Bloch eigenstates at isolated band degeneracy points exhibit singular behavior in the quantum metric. Here, a description of superfluid weight for zero-energy flat bands in proximity to other high-energy bands is presented, where they together form a singular band gap system. When the singular band gap closes, the geometric and conventional contributions to the superfluid weight as a function of the superconducting gap exhibit different cross-over behaviors. The scaling behavior of superfluid weight with the band gap is studied in detail, and the effect on the Berezinskii–Kosterlitz–Thouless transition temperature is explored. It is found that tuning the singular band gap provides a unique mechanism for enhancing the supercurrent and critical temperature of two-dimensional superconductors.

Science & Technology - Other Topics↗
DOE OSTI2025

The C2 domain augments Ras GTPase-activating protein catalytic activity

Regulation of Ras GTPases by GTPase-activating proteins (GAPs) is essential for their normal signaling. Nine of the ten GAPs for Ras contain a C2 domain immediately proximal to their canonical GAP domain, and in RasGAP (p120GAP, p120RasGAP;RASA1) mutation of this domain is associated with vascular malformations in humans. Here, we show that the C2 domain of RasGAP is required for full catalytic activity toward Ras. Analyses of the RasGAP C2-GAP crystal structure, AlphaFold models, and sequence conservation reveal direct C2 domain interaction with the Ras allosteric lobe. This is achieved by an evolutionarily conserved surface centered around RasGAP residue R707, point mutation of which impairs the catalytic advantage conferred by the C2 domain in vitro. In mice,R707Cmutation phenocopies the vascular and signaling defects resulting from constitutive disruption of theRASA1gene. In SynGAP, mutation of the equivalent conserved C2 domain surface impairs catalytic activity. Our results indicate that the C2 domain is required to achieve full catalytic activity of GAPs for Ras.

Science & Technology - Other Topics↗
DOE OSTI2020

Theoretical and experimental study of temperature effect on electronic and optical properties of TiO 2 : Comparing rutile and anatase

To gain fundamental understanding of the high-temperature optical gas-sensing and light-energy conversion materials, we comparatively investigate the temperature effects on the band gap and optical properties of rutile and anatase TiO 2 experimentally and theoretically. Given that the electronic structures of rutile and anatase are fundamentally different, i.e. direct band gap in rutile and indirect gap in anatase, it is not clear whether these materials exhibit different electronic structure renormalizations with temperature. Using ab initio methods, we show that the electron-phonon interaction is the dominant factor for temperature band gap renormalization compared to the thermal expansion. As a result of different contributions from the acoustic and optical phonons, the band gap is found to widen with temperature up to 300 K, and to narrow at higher temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Studies and optimization of hybrid X-pinches

Studies were carried out on the hybrid X-pinch (HXP) configuration for several wire materials using a 40ns risetime, 300-kA pulsed-power generator with the goal of optimizing the HXP X-ray burst parameters for different applications. The gap distance between the conical electrodes of the hybrid X-pinch was varied from 0.5 to 5 mm for Al, Ag, Ti, and Mo using different wire diameters to maintain a consistent mass per unit length from one material to the next. It was found that 0.5 - 1 mm gap spacing was optimal to obtain a single X-ray burst, while the number of X-ray bursts increased with gap spacing for all materials at a rate of 1-2/mm. Time consistency studies of the first X-ray burst were carried out for Ti wire by changing the gap distance and wire diameter while observing the time of occurrence of the X-ray bursts. Here, it was found that a 40μm Ti wire load with a 3mm electrode gap spacing had the highest probability to have the first X-ray burst reproducibly within a 2 ns time window. Time-resolved and time-integrated diagnostics provided information about the source size, time of occurrence, intensity, and the number of the X-ray bursts.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Topological nonmagnetic impurity states in topological Kondo insulators

We examine here the presence of nonmagnetic impurities in a hybridization gap model of a Kondo insulator which has band inversion. The model has been used to predict that SmB 6 is a topological insulator. We show that there are two types of nonmagnetic impurity states in a Kondo insulator. The type of states can be categorized as deep impurity states, similar to the impurity states in an ordinary metal, and impurity states which have energies within the hybridization gap. Unlike the deep impurity states which only form if the impurity potential exceeds a critical value of the order of the conduction bandwidth, the in-gap impurity states form for exceptionally small values of the impurity potential comparable to the hybridization gap. This finding may explain why Kondo insulators are found to be exceptionally sensitive to impurities. We demonstrate that these in-gap states are caused by band inversion and have properties similar to those expected for impurities in a topological insulator.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Spatial BCS-BEC crossover in superconducting $\textit{p–n}$ junctions

Here, we present a theory of superconducting $\textit{p–n}$ junctions. To this end, we consider a two band model of doped bulk semiconductors with attractive interactions between the charge carriers and derive the superconducting order parameter, the quasiparticle density of states, and the chemical potential as a function of the semiconductor gap $Δ_0$ and the doping level ε. We verify previous results for the quantum phase diagram for a system with constant density of states in the conduction and valence band, which show BCS-superconductor to Bose-Einstein-condensation (BEC) and BEC-to-insulator transitions as a function of doping level and the size of the band gap. Then, we extend this formalism to a density of states which is more realistic for 3D systems and derive the corresponding quantum phase diagram, where we find that a BEC phase can only exist for small band gaps $Δ_0 < Δ ^{\ast}_0$. For larger band gaps, we find rather a direct transition from an insulator to a BCS phase. Next, we apply this theory to study the properties of superconducting $\textit{p–n}$ junctions. We derive the spatial variation of the superconducting order parameter along the $\textit{p–n}$ junction. As the potential difference across the junction leads to energy band bending, we find a spatial crossover between a BCS and BEC condensate, as the density of charge carriers changes across the $\textit{p–n}$ junction. For the two-dimensional system, we find two possible regimes, when the bulk is in a BCS phase, a BCS-BEC-BCS junction with a single BEC layer in the space charge region, and a BCS-BEC-I-BEC-BCS junction with two layers of BEC condensates separated by an insulating layer. In three dimensions we find that there can also be a conventional BCS-I-BCS junction for semiconductors with band gaps exceeding $Δ^{\ast}_0$. Thus, we find that there can be BEC layers in the well controlled setting of doped semiconductors, where the doping level can be varied to change and control the thickness of BEC and insulator layers, making Bose-Einstein condensates thereby possibly accessible to experimental transport and optical studies in solid-state materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Twofold symmetry of proximity-induced superconductivity in Bi 2 Te 3 / Bi 2 Sr 2 CaCu 2 O 8 + δ heterostructures revealed by scanning tunneling microscopy

We observe proximity-induced superconductivity in in situ prepared heterostructures constructed by topological insulator Bi 2 Te 3 thin films and high-temperature cuprate superconductors Bi 2 Sr 2 CaCu 2 O 8+δ . The superconducting gap maximum is about 7.6 meV on the surface of Bi 2 Te 3 thin films with a thickness of two quintuple layers, and the gap value decreases with an increase in the film thickness. Moreover, the quasiparticle interference data show clear evidence of a twofold symmetric superconducting gap with gap minima along one pair of the principal crystalline axes of Bi 2 Te 3 . This gap form is consistent with the Δ 4y notation of the topological superconductivity proposed in such systems. Our results provide fruitful information on the possible topological superconductivity induced by the proximity effect in high-temperature superconducting cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Suppression of superconducting parameters by correlated quasi-two-dimensional magnetic fluctuations

In this work, we consider a clean layered magnetic superconductor in which a continuous magnetic transition takes place inside a superconducting state. We assume that the exchange interaction between superconducting and magnetic subsystems is weak so that superconductivity is not destroyed at the magnetic transition. A representative example of such material is Rb Eu Fe 4 As 4 . We investigate the suppression of the superconducting gap and superfluid density by correlated magnetic fluctuations in the vicinity of the magnetic transition. The influence of nonuniform exchange field on superconducting parameters is very sensitive to the relation between the magnetic correlation length ξ h and superconducting coherence length ξ s defining the ‘scattering’ ( ξ h < ξ s ) and ‘smooth’ ( ξ h > ξ s ) regimes. As a small uniform exchange field does not affect the superconducting gap and superfluid density at zero temperature, smoothening of the spatial variations of the exchange field reduces its effects on these parameters. We develop a quantitative description of this ‘scattering-to-smooth’ crossover for the case of quasi-two-dimensional magnetic fluctuations realized in Rb Eu Fe 4 As 4 . Since the magnetic-scattering energy scale is comparable with the gap in the crossover region, the standard quasiclassical approximation is not applicable and full microscopic treatment is required. We find that the corrections to both the gap and superfluid density increase proportionally to ξ h until it remains much smaller than ξ s . In the opposite limit, when the correlation length exceeds the coherence length both parameters have much weaker dependence on ξ h . Moreover, the gap correction may decrease with increasing of ξ h in the immediate vicinity of the magnetic transition if it is located at temperature much lower than the superconducting transition. We also find that the crossover between the two regimes is unexpectedly broad: The standard scattering approximation becomes sufficient only when ξ h is substantially smaller than ξ s .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Origin of gaplike behaviors in URu 2 Si 2 : Combined study via quasiparticle scattering spectroscopy and resistivity measurements

In this work, we address two long-standing questions regarding the hidden order in URu 2 Si 2 : Is it associated with the hybridization process, and what are the distinct roles played by the localized and itinerant electrons? Our quasiparticle scattering spectroscopy reveals a hybridization gap ubiquitous in the entire phase space spanned by P and Fe substitutions in URu 2 Si 2 , including the no-order and antiferromagnetic regions, with minimal change upon crossing the phase boundary. This indicates its opening is not associated with the ordering, and thus localized electrons must be the major player. Towards a consistent understanding of all the other gaplike behaviors observed only below transition temperatures, we analyze the electrical resistivity using a model in which gapped bosonic excitations are the dominant scattering source. With their stiffness set to follow an unusual temperature dependence (decreasing with decreasing temperature), this model fits all of our resistivity data well including the jump at the transition. Remarkably, the extracted gap increases slowly with increasing Fe content, similarly to the gap detected by inelastic neutron scattering at $Q_1$ = (1.4, 0, 0), suggesting a common origin. Such a model can also naturally explain the Hall effect temperature dependence without invoking Fermi surface gapping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Multiband superconductivity in V 3 Si determined from studying the response to controlled disorder

The London penetration depth, λ(T), was measured in a single crystal V 3 Si. The superfluid density obtained from this measurement shows a distinct signature of two almost decoupled superconducting gaps. This alone is insufficient to distinguish between s ± and s ++ pairing states, but it can be achieved by studying the effect of a controlled non-magnetic disorder on the superconducting transition temperature, T c . For this purpose, the same V 3 Si crystal was sequentially irradiated by 2.5 MeV electrons three times, repeating the measurement between the irradiation runs. A total dose of 10 C/cm 2 (6.24 × 10 19 electrons/cm 2 ) was accumulated, for which T c has changed from 16.4 K in a pristine state to 14.7 K (9.3 %). This substantial suppression is impossible for a single isotropic gap, but also it is not large enough for a sign-changing s± pairing state. Our electronic band-structure calculations show how five bands crossing the Fermi energy can be naturally grouped to support two effective gaps, not dissimilar from the iron pnictides physics. We analyze the results using two-gap models for both, λ(T) and T c , which describe the data very well. Finally, the experimental results and theoretical analysis provide strong support for an s ++ superconductivity with two unequal gaps, Δ 1 (0) ≈ 2.53 meV and Δ 2 (0) ≈ 1.42 meV, and a very weak inter-band coupling in V 3 Si superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Phonon-assisted optical absorption of SiC polytypes from first principles

Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have existed for more than 50 years, theoretical investigations of phonon-assisted absorption have been hampered by their excessive computational cost. Here, in this work, we calculate the phonon-assisted temperature-dependent optical absorption spectra of the commonly occurring SiC polytypes (3C, 2H, 4H, 6H, and 15R), using first-principles approaches based on density functional theory and related techniques. We show that our results agree with experimentally determined absorption coefficients in the spectral region between the direct and indirect band gaps. The temperature dependence of the spectra can be well predicted with taking the temperature dependence of the band gaps into account. Lastly, we compare the spectra obtained with second-order perturbation theory to those determined by the special displacement method and we show that the full consideration of the electronic energy renormalization due to temperature is important to further improve the prediction of the phonon-assisted absorption in SiC. Our insights can be applied to predict the optical spectra of the less common SiC polytypes and other indirect-gap semiconductors in general.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Proton pairing in neutron stars from chiral effective field theory

Here, we study the 1 S 0 proton pairing gap in beta-equilibrated neutron star matter within the framework of chiral effective field theory. We focus on the role of three-body forces, which strongly modify the effective proton-proton spin-singlet interaction in dense matter. We find that three-body forces generically reduce both the size of the pairing gap and the maximum density at which proton pairing may occur. The pairing gap is computed within BCS theory using a single-particle dispersion relation calculated up to second order in perturbation theory. Model uncertainties are estimated by varying the nuclear potential (its order in the chiral expansion and high-momentum cutoff) and the choice of single-particle spectrum in the gap equation. We find that a second-order perturbative treatment of the single-particle spectrum suppresses the proton 1 S 0 pairing gap relative to the use of a free spectrum. We estimate the critical temperature for the onset of proton superconductivity to be T c = (3:2–5:1) 10 9 K, which is consistent with previous theoretical results in the literature and marginally within the range deduced from a recent Bayesian analysis of neutron star cooling observations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

Defect-induced displacement of topological surface state in quantum magnet MnBi2Te4

The topological magnet MnBi2⁢Te4 (MBT), with gapped topological surface state, is an attractive platform for realizing quantum anomalous Hall and axion insulator states. However, the experimentally observed surface state gaps fail to meet theoretical predictions, although the exact mechanism behind the gap suppression has been debated. Recent theoretical studies suggest that intrinsic antisite defects push the topological surface state away from the MBT surface, closing its gap and making it less accessible to scanning probe experiments. Here, we report on the local effect of defects on the MBT surface states and demonstrate that high defect concentrations lead to a displacement of the surface states well into the MBT crystal, validating the theorized mechanism. The local and global influence of antisite defects on the topological surface states are studied with samples of varying defect densities by combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory. Our findings identify a combination of increased defect density and reduced defect spacing as the primary factors underlying the displacement of the surface states and suppression of surface gap, guiding further development of topological quantum materials.

Lupke, Felix [Carnegie Mellon University (CMU)]↗