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At least 973 records · Page 54

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. Moreover, it is shown, that the photoenhanced wet chemical etching allows to remove GaN layer without damaging silicon substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy

The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

The results of studies of the spontaneous photoluminescence and stimulated emission spectra of epitaxial n-InN layers with a concentration of free electrons of ~10{sup 19} cm{sup –3} are reported. The layers are grown by molecular-beam epitaxy with the plasma activation of nitrogen on sapphire substrates with AlN and GaN buffer layers. It is found that, as the InN layers are grown under conditions with enrichment with nitrogen at a growth temperature elevated to 470°C close to the beginning of the decomposition of InN, the crystal quality of the layers is improved and the stimulated-emission threshold is lowered. As the conditions of growth change to conditions with enrichment with the metal, two emission bands separated by an energy of 100 meV are observed in the spontaneous-photoluminescence spectra of InN. For such layers, a substantial increase in the stimulated-emission threshold and, in some cases, the lack of a transition to stimulated emission are observed. In the study, an interpretation of the observed emission bands is given and some inferences as to their nature are made.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions

We report the results of systematic Raman spectroscopy studies of Al{sub x}Ga{sub 1 –x}N (x ~ 0.75) layers grown using plasma-assisted molecular beam epitaxy at various stoichiometric conditions and growth fluxes. The high-intensity asymmetric low-frequency peak obeying Bose statistics is discovered in Raman spectra of the layers grown by temperature-modulated epitaxy at strongly Ga-enriched conditions. Theoretical model is developed to explain the origin and the high intensity of the observed low-frequency peak, which is attributed to the presence of excessive metallic gallium in AlGaN layers and can be explained by vibrations of gallium clusters with a diameter of ~1 nm. The nature of the low-frequency peak is similar to that of the boson peak in glasses, which occupies the same frequency range in Raman spectra. We demonstrate the capabilities of Raman spectroscopy as an express and non-destructive technique for optimization of growth conditions of AlGaN layers to achieve simultaneously the atomically-smooth droplet-free surface morphology and the high structural quality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optical properties of bulk gallium nitride single crystals grown by chloride–hydride vapor-phase epitaxy

A gallium nitride crystal 5 mm in thickness was grown by chloride–hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Analysis of Size Effects during Martensitic Transitions in Epitaxial Films and Microparticles of the Ni–Mn–Sn Alloy

Abstract—: The available literature data on the effect of the thickness of the epitaxial films and size of the crystallites in the microparticles of the Ni–Mn–Sn alloy powder on the parameters of the martensitic transitions in this alloy have been analyzed in the framework of the theory of defuse martensitic transitions (DMT), which is based on thermodynamic and kinetic ratios. The purpose of the analysis is to establish an explicit (functional) dependence of these parameters on the film thickness D and the size of nanocrystallites d in the film and microparticles. The results of the R-diffraction analysis show that internal elastic microdeformations and stresses arise in films and microparticles of the alloy powder due to the coherent coupling of the epitaxial film with a solid substrate or as a result of severe plastic deformation of the alloy during its grinding in a ball mill. The analysis shows that the local microstresses significantly affect the type of the dependence of the temperature interval (diffusity) ΔT of the transition on the size factors D or d. In the absence of microstresses, these dependences have the form ΔT ∼ 1/D{sup 2} or ΔT ∼ 1/d{sup 2}. In the presence of microstresses, the temperature transition interval depends on the size factors as ΔT ∼ 1/D or ΔT ∼ 1/d.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum

We have studied the structure of epitaxial graphene obtained as a result of thermal desorption of the silicon carbide surface under conditions of vacuum synthesis and in Ar medium by reflection electron diffraction. As a result of the study, a significantly more uniform buffer layer coating of the SiC surface by epitaxial graphene has been found when forming in inert medium on the surface of 4H- and 6H-SiC(0001) polytypes compared with the synthesis of graphene in high vacuum. The quality of the coating has been shown to depend on the degree of perfection of the original single crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spontaneous Formation of Indium Clusters in InN Epilayers Grown by Molecular-Beam Epitaxy

We have studied the influence of growth conditions on the number of metallic indium clusters formed spontaneously in indium nitride (InN) layers grown by nitrogen plasma-assisted molecular-beam epitaxy (PAMBE). InN epilayers of N-and In-polarity were grown on c-sapphire substrates and GaN and AlN templates, respectively. N-polar layers were obtained in the standard PAMBE regime, while In-polar layers were grown using a three-stage regime including the stages of epitaxy with enhanced atomic migration and interruption of growth under nitrogen flow. A series of samples were prepared at various growth temperatures and relative In/N flow rates. Measurement of the magnetic-field dependences of the Hall-effect coefficient and its model approximation were used to determine the percentage content of In clusters in various InN layers and the minimum amount of such inclusions that can be achieved by varying the conditions of MBE growth.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The finite size effect on the transport and magnetic properties of epitaxial Fe 3 O 4 thin films

Here, magnetite (Fe 3 O 4 ) has great potential for use in the new field of spintronics due to its interesting physical properties, e.g., half-metallic ferromagnetic nature and metal–insulator transition (Verwey transition). Therefore, a basic understanding of these properties is essential for applications in spintronics devices, especially as the film thickness is reduced. In this work, the transport and magnetic properties of stoichiometric ultrathin epitaxial Fe 3 O 4 films have been investigated. The Fe 3 O 4 films were grown on MgO (001) substrates using molecular beam epitaxy under optimal growth conditions. Low energy electron diffraction and X-ray photoemission spectroscopy confirmed that the films are single phase Fe 3 O 4 . The Verwey transition has been investigated using both transport and magnetization measurements. The magnetization measurements show a sharp Verwey transition in all of these films, which indicates that the films have properties comparable to the bulk. Furthermore, the magnetization measurements at room temperature show that the ultrathin films with thickness t < 20 nm are ferromagnetic with magnetization values greater than those for bulk magnetite. Such enhanced magnetization in ultrathin Fe 3 O 4 films is very promising for spin injection and other applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Near surface structure of ultrathin epitaxial Ru films on graphene/amorphous SiO 2 revealed by azimuthal RHEED

Ru has been considered as an alternative metallic candidate for future local interconnects. The 2D reciprocal space map constructed from the azimuthal reflection high-energy electron diffraction patterns reveals that ultrathin Ru(0001) is epitaxially grown on transferred graphene on amorphous SiO 2 through quasi-van der Waals interaction. The in-plane and out-of-plane lattice constants are measured from streaks’ separation and intensity modulations along streaks, respectively. Weak and broad rings indicate that a low density of nanoscale polycrystals exist on the surface. In this work, The intensities of 00 and non-00 diffraction spots vs. azimuthal angles in the 2D map show a few degrees out-of-plane and in-plane angular misorientations among grains, respectively. As the film thickness decreases these angular misorientations increase. Transmission electron microscopy carried out in this study also provides precise values of lattice constant and sub-grain sizes in the films. These findings show that ultrathin Ru film is epitaxial but not exactly single crystalline.

36 MATERIALS SCIENCE↗

(abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

epitaxial doped PBCO YBCO junction fabrication mil↗

Structural and Optical Properties of InGaN-GaN Nanowire Heterostructures Grown by Molecular Beam Epitaxy

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, {mu}-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

36 MATERIALS SCIENCE↗

Crystal Growth and Characterization of Epitaxial Layers of Laser and Nonlinear Optical Materials for Thin-Disk and Waveguide laser applications

This paper summarizes the main results we obtained in our laboratories in relation with crystalline layers obtained by liquid phase epitaxial growth of lanthanide doped KLu(WO{sub 4}){sub 2} and Nb:RbTiOPO{sub 4} grown on KLu(WO{sub 4}){sub 2} and RbTiOPO{sub 4} substrates, respectively. Macroscopic defect free epitaxial layers were grown and characterized in terms of their compositional homogeneity, structural stress in the layer/substrate interface and laser and waveguiding performances.

36 MATERIALS SCIENCE↗

Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) as a Route to Inexpensive, High-Performance III-V Materials and Devices

This work describes the recent development of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE), which extends the standard HVPE process to allow for the deposition of relatively complex heterostructures and devices at growth rates in excess of 300 um/h. This process uses low-cost elemental metal precursors, and uses all of the reactants efficiently to create high-performance devices. D-HVPE also lends itself to potential in-line growth, which when combined with the low-cost precursors and extremely fast growth rates for high-quality III-V materials, can lead to significantly lower epitaxial growth costs. Here, we focus on the growth of high-efficiency photovoltaics as an example device to show the capabilities of the D-HVPE growth process.

14 SOLAR ENERGY↗

Crystal Symmetry Engineering in Epitaxial Perovskite Superlattices

Interface plays a critical role in determining the physical properties and device performance of heterostructures. Traditionally, lattice mismatch, resulting from the different lattice constants of the heterostructure, can induce epitaxial strain. Over past decades, strain engineering has been demonstrated as a useful strategy to manipulate the functionalities of the interface. However, mismatch of crystal symmetry at the interface is relatively less studied due to the difficulty of atomically structural characterization, particularly for the epitaxy of low symmetry correlated materials on the high symmetry substrates. Overlooking those phenomena restrict the understanding of the intrinsic properties of the as- determined heterostructure, resulting in some long-standing debates including the origin of magnetic and ferroelectric dead layers. Here, perovskite LaCoO 3 -SrTiO 3 superlattice (SL) is used as a model system to show that the crystal symmetry effect can be isolated by the existing interface strain. Combining the state-of-art diffraction and electron microscopy, it is found that the symmetry mismatch of LaCoO 3 -SrTiO 3 SL can be tuned by manipulating the SrTiO 3 layer thickness to artificially control the magnetic properties. Furthermore, the work suggests that crystal symmetry mismatch can also be designed and engineered to act as an effective strategy to generate functional properties of perovskite oxides.

36 MATERIALS SCIENCE↗

Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. Here, in this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m -1 K -1 for 25.5–133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron–phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron–phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.

36 MATERIALS SCIENCE↗

Ionic‐Liquid‐Gating‐Induced Hydrogenation in Epitaxial Strontium Ferrite

Abstract Incorporating hydrogen into complex oxides holds promise for discovering exotic phenomena and novel functionalities by promoting couplings between ion and lattice/charge/spin/orbital degrees of freedom. Here, electrolyte gating‐driven hydrogenation is investigated in epitaxial brownmillerite SrFeO 2.5 thin films in which the hydrogenation‐induced lattice distortion is qualitatively different from its counterpart SrCoO 2.5 . The achievable lattice expansion in hydrogenated SrFeO 2.5 is weaker than in SrCoO 2.5 and primarily occurs along the normal of the stacked octahedral FeO 6 and tetrahedral FeO 4 layers. Upon the substitution of Fe with Co, the lattice expansion monotonically increases with increase of Co/Fe ratio, implying an intrinsic difference in accommodating hydrogen between Fe‐ and Co‐based brownmillerites. Moreover, a net magnetic moment in hydrogenated SrFeO 2.5 films is observed above room temperature, which gradually weakens with the increase of Co substitution, suggesting a stronger canted magnetism in Fe‐based hydrogenated brownmillerites. This work clarifies the electrolyte gating‐driven hydrogenation mechanisms in brownmillerite SrFeO 2.5 epitaxial thin films and those with Co substitution, particularly the deterministic role of Co/Fe ratio in the evolution of structure and properties upon hydrogenation.

Chemistry↗

Anomalous Defect Dependence of Thermal Conductivity in Epitaxial WO 3 Thin Films

Lattice defects typically reduce lattice thermal conductivity, which has been widely exploited in applications such as thermoelectric energy conversion. Here, an anomalous dependence of the lattice thermal conductivity on point defects is demonstrated in epitaxial WO 3 thin films. Depending on the substrate, the lattice of epitaxial WO 3 expands or contracts as protons are intercalated by electrolyte gating or oxygen vacancies are introduced by adjusting growth conditions. Surprisingly, the observed lattice volume, instead of the defect concentration, plays the dominant role in determining the thermal conductivity. In particular, the thermal conductivity increases significantly with proton intercalation, which is contrary to the expectation that point defects typically lower the lattice thermal conductivity. The thermal conductivity can be dynamically varied by a factor of ≈1.7 via electrolyte gating, and tuned over a larger range, from 7.8 to 1.1 W m -1 K -1 , by adjusting the oxygen pressure during film growth. The electrolyte-gating-induced changes in thermal conductivity and lattice dimensions are reversible through multiple cycles. These findings not only expand the basic understanding of thermal transport in complex oxides, but also provide a path to dynamically control the thermal conductivity.

36 MATERIALS SCIENCE↗