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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Creation of quantum entanglement with two separate diamond nitrogen vacancy centers coupled to a photonic molecule

We explore the entanglement generation and the corresponding dynamics between two separate nitrogen-vacancy (NV) centers in diamond nanocrystal coupled to a photonic molecule consisting of a pair of coupled photonic crystal (PC) cavities. By calculating the entanglement concurrence with readily available experimental parameters, it is found that the entanglement degree strongly depends on the cavity-cavity hopping strength and the NV-center-cavity detuning. High concurrence peak and long-lived entanglement plateau can be achieved by properly adjusting practical system parameters. Meanwhile, we also discuss the influence of the coupling strength between the NV centers and the cavity modes on the behavior of the concurrence. Such a PC-NV system can be employed for quantum entanglement generation and represents a building block for an integrated nanophotonic network in a solid-state cavity quantum electrodynamics platform. In addition, the present theory can also be applied to other similar systems, such as two single quantum emitters positioned close to a microtoroidal resonator with the whispering-gallery-mode fields propagating inside the resonator.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

A diamond-based scanning probe spin sensor operating at low temperature in ultra-high vacuum

We present the design and performance of an ultra-high vacuum (UHV) low temperature scanning probe microscope employing the nitrogen-vacancy color center in diamond as an ultrasensitive magnetic field sensor. Using this center as an atomic-size scanning probe has enabled imaging of nanoscale magnetic fields and single spins under ambient conditions. In this article we describe an experimental setup to operate this sensor in a cryogenic UHV environment. This will extend the applicability to a variety of molecular systems due to the enhanced target spin lifetimes at low temperature and the controlled sample preparation under UHV conditions. The instrument combines a tuning-fork based atomic force microscope (AFM) with a high numeric aperture confocal microscope and the facilities for application of radio-frequency (RF) fields for spin manipulation. We verify a sample temperature of <50 K even for strong laser and RF excitation and demonstrate magnetic resonance imaging with a magnetic AFM tip.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320 mA constant biasing current and a negative biasing voltage decreasing from −490 V to −375 V for silicon substrates pre-heated to 800 °C. Method B employs 400 mA constant biasing current and a decreasing negative biasing voltage from −375 V to −390 V for silicon pre-heated to 900 °C. Method C employs −350 V constant biasing voltage and an increasing biasing current up to 400 mA for silicon pre-heated to 800 °C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Polycrystalline CVD diamond detector: Fast response and high sensitivity with large area

Polycrystalline diamond was successfully used to fabricate a large area (diameter up to 46 mm) radiation detector. It was proven that the developed detector shows a fast pulsed response time and a high sensitivity, therefore its rise time is lower than 5 ns, which is two times faster than that of a Si-PIN detector of the same size. And because of the large sensitive area, this detector shows good dominance in fast pulsed and low density radiation detection.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Enhancing electrical conductivity and electron field emission properties of ultrananocrystalline diamond films by copper ion implantation and annealing

Copper ion implantation and subsequent annealing at 600 °C achieved high electrical conductivity of 95.0 (Ωcm){sup −1} for ultrananocrystalline diamond (UNCD) films with carrier concentration of 2.8 × 10{sup 18} cm{sup −2} and mobility of 6.8 × 10{sup 2} cm{sup 2}/V s. Transmission electron microscopy examinations reveal that the implanted Cu ions first formed Cu nanoclusters in UNCD films, which induced the formation of nanographitic grain boundary phases during annealing process. From current imaging tunneling spectroscopy and local current-voltage curves of scanning tunneling spectroscopic measurements, it is observed that the electrons are dominantly emitted from the grain boundaries. Consequently, the nanographitic phases presence in the grain boundaries formed conduction channels for efficient electron transport, ensuing in excellent electron field emission (EFE) properties for copper ion implanted/annealed UNCD films with low turn-on field of 4.80 V/μm and high EFE current density of 3.60 mA/cm{sup 2} at an applied field of 8.0 V/μm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A compact bellows-driven diamond anvil cell for high-pressure, low-temperature magnetic measurements

We present the design of an efficient bellows-controlled diamond anvil cell that is optimized for use inside the bores of high-field superconducting magnets in helium-3 cryostats, dilution refrigerators, and commercial physical property measurement systems. Design of this non-magnetic pressure cell focuses on in situ pressure tuning and measurement by means of a helium-filled bellows actuator and fiber-coupled ruby fluorescence spectroscopy, respectively. We demonstrate the utility of this pressure cell with ac susceptibility measurements of superconducting, ferromagnetic, and antiferromagnetic phase transitions to pressures exceeding 8 GPa. This cell provides an opportunity to probe charge and magnetic order continuously and with high resolution in the three-dimensional Magnetic Field–Pressure–Temperature parameter space.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Single crystal diamond detector measurements of deuterium-deuterium and deuterium-tritium neutrons in Joint European Torus fusion plasmas

First simultaneous measurements of deuterium-deuterium (DD) and deuterium-tritium neutrons from deuterium plasmas using a Single crystal Diamond Detector are presented in this paper. The measurements were performed at JET with a dedicated electronic chain that combined high count rate capabilities and high energy resolution. The deposited energy spectrum from DD neutrons was successfully reproduced by means of Monte Carlo calculations of the detector response function and simulations of neutron emission from the plasma, including background contributions. The reported results are of relevance for the development of compact neutron detectors with spectroscopy capabilities for installation in camera systems of present and future high power fusion experiments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Nitrogen incorporated ultrananocrystalline diamond based field emitter array for a flat-panel x-ray source

A field emission based flat-panel transmission x-ray source is being developed as an alternative for medical and industrial imaging. A field emitter array (FEA) prototype based on nitrogen incorporated ultrananocrystalline diamond film has been fabricated to be used as the electron source of this flat panel x-ray source. The FEA prototype was developed using conventional microfabrication techniques. The field emission characteristics of the FEA prototype were evaluated. Results indicated that emission current densities of the order of 6 mA/cm{sup 2} could be obtained at electric fields as low as 10 V/μm to 20 V/μm. During the prototype microfabrication process, issues such as delamination of the extraction gate and poor etching of the SiO{sub 2} insulating layer located between the emitters and the extraction layer were encountered. Consequently, alternative FEA designs were investigated. Experimental and simulation data from the first FEA prototype were compared and the results were used to evaluate the performance of alternative single and double gate designs that would yield better field emission characteristics compared to the first FEA prototype. The best simulation results are obtained for the double gate FEA design, when the diameter of the collimator gate is around 2.6 times the diameter of the extraction gate.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2014

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Fabrication of highly transparent diamond-like carbon anti-reflecting coating for Si solar cell application

ARC grade highly transparent unhydrogenated diamond-like carbon (DLC) films were produced, directly from a-C target, using RF magnetron sputtering deposition technique, for optoelectronic applications. Optical band gap, transmittance, reflectance, sp{sup 3} fraction, I{sub D}/I{sub G}, density, and refractive index of the films have been estimated with the help of optical tools like Uv-vis spectrophotometer, ellipsometer and micro-Raman. Optimum ARC-qualities have been identified in low-temperature grown DLC films at an Ar pressure of 4 mTorr in the reactor, accomplishing its key requirements for use in silicon solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH{sub 4}/Ar plasma

This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH{sub 4}/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Diamond micro-Raman thermometers for accurate gate temperature measurements

Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhancing the stability of microplasma device utilizing diamond coated carbon nanotubes as cathode materials

This paper reports the enhanced stability of a microplasma device by using hybrid-granular-structured diamond (HiD) film coated carbon nanotubes (CNTs) as cathode, which overcomes the drawback of short life time in the CNTs-based one. The microplasma device can be operated more than 210 min without showing any sign of degradation, whereas the CNTs-based one can last only 50 min. Besides the high robustness against the Ar-ion bombardment, the HiD/CNTs material also possesses superior electron field emission properties with low turn-on field of 3.2 V/μm, which is considered as the prime factor for the improved plasma illumination performance of the devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Bandgap properties of diamond structure photonic crystal heterostructures with inclined and curved interfaces

The 3D (dimensional) diamond structure photonic crystal heterostructures with different lattice constants were prepared using rapid prototyping and gel casting with alumina. In this paper, heterostructures with inclined and curved interfaces were designed and its bandgap properties were studied. The normalized resonant intensity of electromagnetic wave in heterostructure with inclined and curved interface is stronger than that in the ordinary heterostructure without modified interface. The influence of curved interface on transmission properties of electromagnetic wave was investigated with the radius of curvature ranging from 17 mm to 37 mm at 5 mm interval. The results show that two resonant modes appear in the photonic band gap, being similar to the band gap characteristics of the photonic crystals with two defects inside. With the increasing of the radius of curvature, the resonant mode shift to higher frequency. In the structure with a radius of curvature of 32 mm, a guiding band appears in the photonic band gap. Further increase in the radius of curvature, the guiding band will split into two resonant modes again and the two resonant modes shift to lower frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Band-selective shaped pulse for high fidelity quantum control in diamond

High fidelity quantum control of qubits is crucially important for realistic quantum computing, and it becomes more challenging when there are inevitable interactions between qubits. We introduce a band-selective shaped pulse, refocusing BURP (REBURP) pulse, to cope with the problems. The electron spin of nitrogen-vacancy centers in diamond is flipped with high fidelity by the REBURP pulse. In contrast with traditional rectangular pulses, the shaped pulse has almost equal excitation effect in a sharply edged region (in frequency domain). So the three sublevels of host {sup 14}N nuclear spin can be flipped accurately simultaneously, while unwanted excitations of other sublevels (e.g., of a nearby {sup 13}C nuclear spin) is well suppressed. Our scheme can be used for various applications such as quantum metrology, quantum sensing, and quantum information process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (10{sup 2} cm{sup 2}/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance

We have performed time-resolved cyclotron resonance measurements in ultrapure diamond crystals for the temperature range of T=7.3–40 K and obtained the temperature-dependent momentum relaxation times based on the cyclotron resonance widths for optically generated electrons and holes. The relaxation time follows a T{sup −3/2} law down to 12 K, which is expected for acoustic-phonon scattering without impurity effect because of the high purity of our samples. The deviation from the law at lower temperatures is explained by the impurity scattering and the breakdown of the high-temperature approximation for the phonon scattering. We extract the carrier drift mobility by using the directly measured effective masses and the relaxation times. The mobility at 10 K for 600 ns delay time after optical injection is found to be μ{sub e}=1.5×10{sup 6} cm{sup 2}/V s for the electrons, and μ{sub lh}=2.3×10{sup 6} cm{sup 2}/V s and μ{sub hh}=2.4×10{sup 5} cm{sup 2}/V s for the light and heavy holes, respectively. These high values are achieved by our high-sensitivity detection for low-density carriers (at <10{sup 11} cm{sup −3}) free from the carrier-carrier scattering as well as by the suppression of the impurity scattering in the high-purity samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of oxygen plasma and thermal oxidation on shallow nitrogen-vacancy centers in diamond

We investigate the effect of two different surface treatments on shallow nitrogen-vacancy (NV) centers in diamond. Short duration oxygen plasma exposure is found to damage near-surface NV centers, resulting in their disappearance in fluorescence images. Subsequent annealing creates large numbers of new NV centers, attributed to plasma-induced vacancy creation. By tracking individual NV centers during thermal oxidation, we show that oxidation at 550 °C results in modest improvement of spin coherence. Higher temperature oxidations correlate with gradual decline in spin coherence and eventual instability of NV centers before ultimate disappearance. This is indicative of a reduction of the NV-to-surface distance due to oxidative etching. Thermal oxidation can offer controlled access to near-surface NV spins at the nanometer scale, an important requirement for many applications of NV-based nanomagnetometry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗