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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

A CCD PHOTOMETRIC STUDY OF THE CONTACT BINARY STAR GSC 03526-01995

We present the first two sets of complete light curves in the R and I bands observed in 2011 and 2012 photometrically for the contact binary GSC 03526-01995. The asymmetric light curves are analyzed with spot models using the Wilson-Devinney code. It is discovered that GSC 03526-01995 is a spotted marginal W-type W UMa contact binary system with a mass ratio of q 2.845({+-} 0.006) and a degree of contact factor f = 18.2%({+-} 1.5%). Combining new determined times of light minimum together with the others published in the literature, the period change of the system is investigated. A cyclic variation, with a period of 7.39 yr and a semiamplitude of 0.00896 days, is discovered. It is plausibly caused by the light-time effect via a third body. The photometric analysis indicates that the suspected third companion might itself be a binary consisting of two stars of 0.285 solar masses, suggesting that GSC 03526-01995 is a quadruple system containing four late-type stars.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2017

Quantification of in-contact probe-sample electrostatic forces with dynamic atomic force microscopy

Here, atomic force microscopy (AFM) methods utilizing resonant mechanical vibrations of cantilevers in contact with a sample surface have shown sensitivities as high as few picometers for detecting surface displacements. Such a high sensitivity is harnessed in several AFM imaging modes. Here, we demonstrate a cantilever-resonance-based method to quantify electrostatic forces on a probe in the probe-sample junction in the presence of a surface potential or when a bias voltage is applied to the AFM probe. We find that the electrostatic forces acting on the probe tip apex can produce signals equivalent to a few pm of surface displacement. In combination with modeling, the measurements of the force were used to access the strength of the electrical field at the probe tip apex in contact with a sample. We find an evidence that the electric field strength in the junction can reach ca. 1 V nm –1 at a bias voltage of a few volts and is limited by non-ideality of the tip-sample contact. This field is sufficiently strong to significantly influence material states and kinetic processes through charge injection, Maxwell stress, shifts of phase equilibria, and reduction of energy barriers for activated processes. Besides, the results provide a baseline for accounting for the effects of local electrostatic forces in electromechanical AFM measurements as well as offer additional means to probe ionic mobility and field-induced phenomena in solids.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Coupling of electroelastic dynamics and direct contact ultrasonic drying formulation for annular piezoelectric bimorph transducers

A newly developed technique for drying clothes without thermal energy has been developed through the utilization of ultrasonic vibrations from piezoelectric transducers. The novel technique incorporates the actuation of a thin stainless steel disk in contact with wet fabric via annular piezoelectric rings, where water in the liquid form is atomized, transported through microchannels in the disk, and ejected as a mist. In such a system, resonance matching between the actuation portion of the transducer and the portion contacting fabric must be realized, with theoretical results from the developed electromechanical model showing a reduction in energy consumption by 50% when resonance matching is achieved. The electrically coupled distributed parameter model for an annular bimorph piezoelectric transducer is developed for optimization of ultrasonic drying technology. The thickness mode vibrations are shown to dominate the behavior of the system, where the analytically developed model can be optimized to increase the output acceleration of the transducer, thus increasing drying performance. Here, the electromechanical equation developed will be connected to the drying rates of fabrics in contact with said vibrations, where the novelty of the coupled equations and its description of the physics of ultrasonic drying will be discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Scanning probe spectroscopy of sulfur vacancies and MoS 2 monolayers in side-contacted van der Waals heterostructures

We investigate the interplay between vertical tunneling and lateral transport phenomena in electrically contacted van der Waals heterostructures made from monolayer MoS 2 , hBN, and graphene. We compare data taken by low-temperature scanning tunneling spectroscopy to results from room-temperature conductive atomic force spectroscopy on monolayer MoS 2 with sulfur vacancies and with varying hBN layers. We show that for thick hBN barrier layers, where tunneling currents into the conductive substrate are suppressed, a side-contact still enables addressing the defect states in the scanning tunneling microscopy via the lateral current flow. Few-layer hBN realizes an intermediate regime in which the competition between vertical tunneling and lateral transport needs to be considered. The latter is relevant for device structures with both a thin tunneling barrier and a side-contact to the semiconducting layers.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Spin-helical detection in a semiconductor quantum device with ferromagnetic contacts

Spin-helical states, which arise in quasi-one-dimensional (1D) channels with spin-orbital (SO) coupling, underpin efforts to realize topologically protected quantum bits based on Majorana modes in semiconductor nanowires. Detecting helical states is challenging due to non-idealities present in real devices. Past efforts have focused on devices with normal contacts. In contrast, here we show by means of tight-binding calculations that by using ferromagnetic contacts it is possible to detect helical modes with high sensitivity even in the presence of realistic device effects, such as quantum interference. We show that by taking advantage of the spin-selective transmission properties of helical states, new transport signatures become possible. In addition, we show that spin-polarized contacts provide a unique path to investigate the spin-texture and spin-momentum locking properties of helical states. Our results are of interest not only for the ongoing development of Majorana qubits, but also for realizing possible spin-based quantum devices, such as quantum spin modulators and interconnects based on spin-helical channels.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Fractional Chern insulator edges and layer-resolved lattice contacts

Fractional Chern insulators (FCIs) realized in fractional quantum Hall systems subject to a periodic potential are topological phases of matter for which space group symmetries play an important role. In particular, lattice dislocations in an FCI can host non-Abelian topological defects, known as genons. Genons can increase the ground-state degeneracy of the system and are thus potentially useful for topological quantum computing. In this work, we study FCI edges and how they can be used to detect genons. We find that translation symmetry can impose a quantized momentum difference between the edge electrons of a partially filled Chern band. We propose layer-resolved lattice contacts, which utilize this momentum difference to selectively contact a particular FCI edge electron. The relative current between FCI edge electrons can then be used to detect the presence of genons in the bulk FCI. Recent experiments have demonstrated graphene is a viable platform to study FCI physics. Here, we describe how the lattice contacts proposed here could be implemented in graphene subject to an artificial lattice, thereby outlining a path forward for experimental dectection of non-Abelian topological defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Gravitational Contact Interactions and the Physical Equivalence of Weyl Transformations in Effective Field Theory

Theories of scalars and gravity, with non-minimal interactions, $\sim (M_P^2 +F(\phi) )R +L(\phi)$, have graviton exchange induced contact terms. These terms arise in single particle reducible diagrams with vertices $\propto q^2$ that cancel the Feynman propagator denominator $1/q^2$ and are familiar in various other physical contexts. In gravity these lead to additional terms in the action such as $\sim F(\phi) T_\mu^\mu(\phi)/M_P^2$ and $F(\phi)\partial^2 F(\phi)/M_P^2$. The contact terms are equivalent to induced operators obtained by a Weyl transformation that removes the non-minimal interactions, leaving a minimal Einstein-Hilbert gravitational action. This demonstrates explicitly the equivalence of different representations of the action under Weyl transformations, both classically and quantum mechanically. To avoid such "hidden contact terms" one is compelled to go to the minimal Einstein-Hilbert representation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Renormalization group for nonminimal Φ 2 R couplings and gravitational contact interactions

Theories of scalars and gravity, with an Einstein-Hilbert term and nonminimal interactions, M 2 R / 2 - α Φ 2 R / 12 , have graviton exchange-induced contact interactions. These modify the renormalization group, leading to a discrepancy between the conventional calculations in the Jordan frame that ignore this effect (and are found to be incorrect), and the Einstein frame in which α does not exist. Thus, the calculation of quantum effects in the Jordan and Einstein frames does not generally commute with the transition from the Jordan to the Einstein frame. In the Einstein frame, though α is absent, for small steps in scale δ μ / μ infinitesimal contact terms ~ δ α are induced, that are then absorbed back into other couplings by the contact terms. This modifies the β -functions in the Einstein frame. In conclusion, we show how correct results can be obtained in a simple model by including this effect.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Weak scaling of the contact distance between two fluctuating interfaces with system size

A pair of flat parallel surfaces, each freely diffusing along the direction of their separation, will eventually come into contact. If the shapes of these surfaces also fluctuate, then contact will occur when their centers-of-mass remain separated by a nonzero distance ℓ. An example of such a situation is the motion of interfaces between two phases at conditions of thermodynamic coexistence, and in particular the annihilation of domain wall pairs under periodic boundary conditions. Here we present a general approach to calculate the probability distribution of the contact distance ℓ and determine how its most likely value ℓ* depends on the surfaces' lateral size L. Using the Edward-Wilkinson equation as a model for interfaces, we demonstrate that ℓ* scales weakly with system size, i.e., the dependence of ℓ* on L for both (1+1)- and (2+1)-dimensional interfaces is such that lim L→∞ (ℓ*/L) = 0. In particular, for (2+1)-dimensional interfaces ℓ* is an algebraic function of logL, a result that is confirmed by computer simulations of slab-shaped domains formed under periodic boundary conditions. Overall, this weak scaling implies that such domains remain topologically intact until ℓ becomes very small compared to the lateral size of the interface, contradicting expectations from equilibrium thermodynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Ab Initio Calculation of the Contact Operator Contribution in the Standard Mechanism for Neutrinoless Double Beta Decay

Starting from chiral nuclear interactions, we evaluate the contribution of the leading-order contact transition operator to the nuclear matrix element (NME) of neutrinoless double-beta decay, assuming a light Majorana neutrino-exchange mechanism. The corresponding low-energy constant (LEC) is determined by fitting the transition amplitude of the nn → ppe – e – process to a recently proposed synthetic datum. We examine the dependence of the amplitude on similarity renormalization group (SRG) scale and chiral expansion order of the nuclear interaction, finding that both dependences can be compensated to a large extent by readjusting the LEC. We evaluate the contribution of both the leading-order contact operator and standard long-range operator to the neutrinoless double-beta decays in the light nuclei 6,8 He and the candidate nucleus 48 Ca. Furthermore, our results provide the first clear demonstration that the contact term enhances the NME by 43(7)% in 48 Ca, where the uncertainty is propagated from the synthetic datum.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Superconducting contact and quantum interference between two-dimensional van der Waals and three-dimensional conventional superconductors

Atomically thin two-dimensional (2D) transition-metal dichalcogenide (TMD) superconductors enable uniform, flat, and clean van der Waals tunneling interfaces, motivating their integration into conventional superconducting circuits. However, fully superconducting contact must be made between the 2D material and three-dimensional (3D) superconductors to employ the standard microwave drive and readout of qubits in such circuits. We present a method for creating zero-resistance contacts between 2D NbSe 2 and 3D aluminum that behave as Josephson junctions (JJs) with large effective areas compared to 3D-3D JJs. The devices formed from 2D TMD superconductors are strongly influenced by the geometry of the flakes themselves as well as the placement of the contacts to bulk 3D superconducting leads. We present a model for the supercurrent flow in a 2D-3D superconducting structure by a numerical solution of the Ginzburg-Landau equations and find good agreement with experiment. Finally, these results demonstrate a crucial step towards a new generation of hybrid superconducting quantum circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Efficient Crystalline Si Solar Cell with Amorphous/Crystalline Silicon Heterojunction as Back Contact: Preprint

We study an amorphous/crystalline silicon heterojunction (Si HJ) as a back contact in industrial standard p-type five-inch pseudo-square wafer to replace Al back surface field (BSF) contact. The best efficiency in this study is over 17% with open-circuit (Voc) of 0.623 V, which is very similar to the control cell with Al BSF. We found that Voc has not been improved with the heterojunctionstructure in the back. The typical minority carrier lifetime of these wafers is on the order of 10 us. We also found that the doping levels of p-layer affect the FF due to conductivity and band gap shifting, and an optimized layer is identified. We conclude that an amorphous/crystalline silicon heterojunction can be a very promising structure to replace Al BSF back contact.

14 SOLAR ENERGY↗
DOE OSTI2015

Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the device performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.

14 SOLAR ENERGY↗
DOE OSTI2019

In Situ Transmission Electron Microscopy: A Powerful Tool for the Characterization of Carrier-Selective Contacts

© 2019 IEEE. The goal of this paper is to provide an overview of an in situ transmission electron microscopy (TEM) technique used to study the thermal stability of various transition metal oxide-based contacts used as carrier-selective contacts in silicon solar cells. In the present work, MoOx/Al and WOx/Al were investigated as hole-selective rear contacts using a combination of in situ TEM and transmission line measurements (TLM).

Ali, Haider↗
DOE OSTI2020

Surface Photovoltage Measurement of Perovskite Solar Cells to Screen Carrier Selective Contacts

SPV measurement through the Kelvin probe method is described. Silicon heterojunction structures show the maximum SPV of 700 V. Measurement on perovskite structures, and the results suggest adding BCP with C60 enhances the selectivity of C60 electron contact. Furthermore, PTAA and PTAA/PFN have similar selectivity but NiO x is poorly selective. SPV is an easy way to provide a relative comparison between various cell structures and contact layers to determine the relative extractable Voc and properties of the contact layer (selectivity, passivation) limiting the efficiency.

Kavadiya, Shalinee↗
DOE OSTI2021

Improved Contacts for Tandem Cells with Enhanced Effciency Grown by D-HVPE

Dynamic hydride vapor phase epitaxy (D-HVPE) has provided a potential route towards lower cost material growth of III-V photovoltaic devices. A highly doped Ga0.5In0.5P emitter layer is grown in attempt to force passivation at the front of the cell to account for the absence of a suitable window layer in our reactor. Control over dopant diffusion in these materials is thus critical to achieving high-efficiency device performance. Here, we institute a two-step contact layer design that boosts tandem cell efficiencies by minimizing Se diffusion into the underlying emitter layer while still providing sufficiently low contact resistance. Short-circuit current in these devices improves to 8.9 mA/cm2 in an uncoated GaInP/GaAs cell, an improvement of 1.2 mA/cm2 over our previous best cell. Conversion efficiency with the new contact doping scheme is projected to be ~27% with the inclusion of a standard ARC layer.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2017

Pioneer Design of Non-contact Synchronized Measurement Devices Using Electric and Magnetic Field Sensors

Here, traditional synchrophasors rely on CTs and PTs physically connected to transmission lines or buses to acquire input signals for phasor measurement. However, it is challenging to install and maintain traditional phasor measurement units in some remote areas due to lack of facilities. Since transmission lines naturally generate alternating electrical and magnetic fields in the surrounding atmosphere, this paper presents two innovative designs for non-contact synchronized measurement devices (NCSMD), including an electric field sensor based non-contact SMD (E-NCSMD) and a magnetic field sensor based non-contact SMD (M-NCSMD). Compared with conventional synchrophasors, E-NCSMD and M-NCSMD are much more flexible to be deployed and have much lower costs, making E-NCSMDs and M-NCSMD highly accessible and useful for a wide array of phasor measurement applications. Laboratory and field experiment results verified the effectiveness of the designs of both E-NCSMD and M-NCSMD.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2015

Molybdenum oxide and molybdenum oxide-nitride back contacts for CdTe solar cells

Molybdenum oxide (MoO{sub x}) and molybdenum oxynitride (MoON) thin film back contacts were formed by a unique ion-beam sputtering and ion-beam-assisted deposition process onto CdTe solar cells and compared to back contacts made using carbon–nickel (C/Ni) paint. Glancing-incidence x-ray diffraction and x-ray photoelectron spectroscopy measurements show that partially crystalline MoO{sub x} films are created with a mixture of Mo, MoO{sub 2}, and MoO{sub 3} components. Lower crystallinity content is observed in the MoON films, with an additional component of molybdenum nitride present. Three different film thicknesses of MoO{sub x} and MoON were investigated that were capped in situ in Ni. Small area devices were delineated and characterized using current–voltage (J-V), capacitance–frequency, capacitance–voltage, electroluminescence, and light beam-induced current techniques. In addition, J-V data measured as a function of temperature (JVT) were used to estimate back barrier heights for each thickness of MoO{sub x} and MoON and for the C/Ni paint. Characterization prior to stressing indicated the devices were similar in performance. Characterization after stress testing indicated little change to cells with 120 and 180-nm thick MoO{sub x} and MoON films. However, moderate-to-large cell degradation was observed for 60-nm thick MoO{sub x} and MoON films and for C/Ni painted back contacts.

14 SOLAR ENERGY↗