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At least 973 records · Page 54

Intermittent oxidation kinetics and metal/oxide interfacial undulation

The phenomenon of oxygen-adsorption-induced surface restructuring is widespread across various metal-oxygen systems, yet its impact on initiating bulk oxide formation remains largely unexplored. In this study, through in-situ atomic-resolution electron microscopy observations of surface oxidation of Cu(110) and Cu 85 Au 15 (110), we unveil intermittent oxide-film growth modulated by oxygen-induced surface restructuring. This modulation is evidenced by repeated pinning of Cu 2 O growth front at isolated Cu columns of the c(6×2)-O reconstruction, owing to required long-range diffusion of Cu and O atoms to the Cu 2 O growth front. We reveal that Cu vacancies, generated at the Cu 2 O growth front, are injected into the Cu 2 O/Cu interface, inducing hill-and-valley undulation of the Cu 2 O film. In contrast, atomic vacancies produced during the Cu 85 Au 15 (110) oxidation preferentially migrate into interfaces between Au-rich and Au-poor regions in the bulk, resulting in a flat and adherent Cu 2 O film. These findings demonstrate the critical role of oxygen-induced surface restructuring in modulating oxide-film-growth kinetics and manipulability of the fate of injected vacancies by alloying, thereby offering insights applicable to a broader range of metal-oxygen systems for fine-tuning oxidation kinetics and enhancing oxide/metal interfacial adhesion.

25 ENERGY STORAGE↗

Learning intermolecular forces at liquid–vapor interfaces

By adopting a perspective informed by contemporary liquid-state theory, we consider how to train an artificial neural network potential to describe inhomogeneous, disordered systems. Here, we find that neural network potentials based on local representations of atomic environments are capable of describing some properties of liquid-vapor interfaces but typically fail for properties that depend on unbalanced long-ranged interactions that build up in the presence of broken translation symmetry. These same interactions cancel in the translationally invariant bulk, allowing local neural network potentials to describe bulk properties correctly. By incorporating explicit models of the slowly varying long-ranged interactions and training neural networks only on the short-ranged components, we can arrive at potentials that robustly recover interfacial properties. We find that local neural network models can sometimes approximate a local molecular field potential to correct for the truncated interactions, but this behavior is variable and hard to learn. Generally, we find that models with explicit electrostatics are easier to train and have higher accuracy. We demonstrate this perspective in a simple model of an asymmetric dipolar fluid, where the exact long-ranged interaction is known, and in an ab initio water model, where it is approximated.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Model for the Solid–Liquid Interfacial Free Energy at High Pressures

The free energy involved in the formation of an interface between two phases (e.g., a solid–liquid interface) is referred to as the interfacial free energy. For the case of solidification, the interfacial free energy dictates the height of the energy barrier required to nucleate stable clusters of the newly forming solid phase and is essential for producing an accurate solidification kinetics model using classical nucleation theory (CNT)-based methods. While various methods have been proposed for modeling the interfacial free energy for solid–liquid interfaces in prior literature, many of these formulations involve making restrictive assumptions or approximations, such as the system being at or near equilibrium (i.e., the system temperature is approximately equal to the melt temperature) or that the system is at pressures close to atmospheric. However, these approximations and assumptions may break down in highly non-equilibrium situations, such as in dynamic-compression experiments where metastable liquids that are undercooled by hundreds of kelvin or over-pressurized by several gigapascals or more are formed before eventually solidifying. We derive a solid–liquid interfacial free-energy model for such high-pressure conditions by considering the enthalpies of interactions between pairs of atoms or molecules. We also consider the contribution of interface roughness (disordering) by incorporating a multilayer interface model known as the Temkin n-layer model. Our formulation is applicable to a diverse variety of materials, and we demonstrate it by developing models specifically for two different materials: water and gallium. We apply our interfacial free-energy formulation to CNT-based kinetics simulations of several suites of dynamic-compression experiments that cause liquid water to solidify to the high-pressure solid polymorph ice VII and have found good agreement to the observed kinetics with only minor empirical fitting.

36 MATERIALS SCIENCE↗

Distance-dependent radiation chemistry: Oxidation versus hydrogenation of CO in electron-irradiated H2O/CO/H2O ices

Electron-stimulated oxidation of CO in layered H2O/CO/H2O ices was investigated with infrared reflection-absorption spectroscopy (IRAS) as function of the distance of the CO layer from the water/vacuum interface. The results show that while both oxidation and reduction reactions occur within the irradiated water films, there are distinct regions where either oxidation or reduction reactions are dominant. At depths less than ~ 15 ML, CO oxidation dominates over the sequential hydrogenation of CO to methanol (CH3OH), and CO2 is the major product of CO oxidation, consistent with previous observations. At its highest yield, CO2 accounts for ~45% of all the reacted CO. Another oxidation product is identified as the formate anion (HCO2-). In contrast, for CO buried more than ~ 35 ML below the water/vacuum interface, the CO-to-methanol conversion efficiency is close to 100%. Production of CO2 and formate are not observed for the more deeply buried CO layers, where hydrogenation dominates. Experiments with CO dosed on pre-irradiated ASW samples suggest that OH radicals are primarily responsible for the oxidation reactions. Possible mechanisms of CO oxidation, involving primary and secondary processes of water radiolysis at low temperature, are discussed. The observed distance-dependent radiation chemistry results from the higher mobility of hydrogen atoms that are created by the interaction of the 100 eV electrons with the water films. These hydrogen atoms, which are primarily created at or near the water/vacuum interface, can desorb from or diffuse into the water films, while the less-mobile OH radicals remain in the near-surface zone resulting in preferential oxidation reactions there. The diffusing hydrogen atoms are responsible for the hydrogenation reactions that are dominant for the more deeply buried CO layers.

Environmental Molecular Sciences Laboratory↗

Thermal transport at (001) twist grain boundaries in UO{sub 2}

The thermal conductivity of the nuclear fuels critically affects performance and safety of the nuclear reactor and thus continues to attract interest of engineers and researches. In spite of the large volume of experimental data on the thermal transport properties in UO{sub 2}, new discoveries in recent years include anisotropic thermal conductivity, and unexpectedly large contribution of the optical phonons to thermal transport. On the other hand, advances in computer power allow to simulate directly from atomic level the effect of structural defects such as grain boundaries, dislocations and pores on the thermal conductivity in UO{sub 2}. Unfortunately, such simulations do not provide detailed information about phonon scattering processes, which are important for the complete understanding of the thermal transport and generation of the physics-based thermal transport models in nuclear performance codes. In this work, we apply phonons wave-packet (PWD) molecular dynamics simulation technique in order to elucidate the individual phonons contribution to the thermal transport through the grain boundaries (GB) in UO{sub 2}. In this work we elucidated the effect of the grain boundary atomic structure on the details of the thermal conductance through the interface. Namely, we demonstrated that transmission coefficient as a function of the wave vector is a strong function of the disorder at the interface: for ideally structured GBs it has sharp peaks and pronounced valleys. Such structure disappears upon introduction of the disorder near the interface, and as a result transmission coefficients behave very similarly between GBs of different misorientation, but the same degree of disorder. Kapitza conductance through these GBs is also nearly identical. It is unlikely for experimentally observed GBs to be atomically sharp, and thus Kapitza conductance in polycrystalline UO{sub 2} can be considered misorientation independent with good accuracy, and it does not to be accounted for in physics-based thermal transport model for fuel performance codes. (authors)

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Adsorption of Molecular Nitrogen in Electrical Double Layers near Planar and Atomically Sharp Electrodes

Here, the adsorption of gas molecules at electrode–electrolyte interfaces is an important step in electrochemical reactions. Using molecular dynamics simulations, we investigate the adsorption of dissolved N 2 in the electrical double layers (EDLs) of an aqueous electrolyte near planar and 1 nm radius spherical carbon electrodes. The adsorption of N 2 is found to be overall enriched near neutral electrodes regardless of their surface curvature, although it can be locally enriched or depleted depending on the distance from the electrode surface. In comparison, the adsorption of N 2 in the EDL near negatively charged electrodes is found to increase under a moderate surface charge density, but decrease under a high surface charge density, especially near a planar electrode. By analyzing the potential of mean force for dissolved N 2 , the solvent-induced effects are found to play important roles in influencing the adsorption of N 2 in the EDLs. The adsorption behavior of N 2 molecules, especially their dependence on the surface charge and curvature of electrodes, is further rationalized by examining the structure of interfacial water molecules, their interference with the hydration shell of N 2 , and their modification by the electrification of electrodes.

42 ENGINEERING↗

Resilient Pathways to Atomic Attachment of Quantum Dot Dimers and Artificial Solids from Faceted CdSe Quantum Dot Building Blocks

Here, the goal of this work is to identify favored pathways for preparation of defect-resilient attached wurtzite CdX (X = S, Se, Te) nanocrystals. We seek guidelines for oriented attachment of faceted nanocrystals that are most likely to yield pairs of nanocrystals with either few or no electronic defects or electronic defects that are in and of themselves desirable and stable. Using a combination of in situ high-resolution transmission electron microscopy (HRTEM) and electronic structure calculations, we evaluate the relative merits of atomic attachment of wurtzite CdSe nanocrystals on the {1$\bar{10}$0} or {11$\bar{20}$} family of facets. Pairwise attachment on either facet can lead to perfect interfaces, provided the nanocrystal facets are perfectly flat and the angles between the nanocrystals can adjust during the assembly. Considering defective attachment, we observe for {1$\bar{10}$0} facet attachment that only one type of edge dislocation forms, creating deep hole traps. For {11$\bar{20}$} facet attachment, we observe that four distinct types of extended defects form, some of which lead to deep hole traps whereas others only to shallow hole traps. HRTEM movies of the dislocation dynamics show that dislocations at {1$\bar{10}$0} interfaces can be removed, albeit slowly. Whereas only some extended defects at {11$\bar{20}$} interfaces could be removed, others were trapped at the interface. Based on these insights, we identify the most resilient pathways to atomic attachment of pairs of wurtzite CdX nanocrystals and consider how these insights can translate to the creation of electronically useful materials from quantum dots with other crystal structures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics

Fermi level pinning at metal/n-InP interface and effective Schottky barrier height (Φ{sub B,eff}) were optimized by inserting ultrathin dielectrics in this work. Comparing the inserted monolayer and bilayer high-k dielectrics, we demonstrated that the introduction of bilayer dielectrics can further reduce Φ{sub B,eff} (from 0.49 eV to 0.22 eV) than the monolayer dielectric (from 0.49 eV to 0.32 eV) even though the overall dielectric thickness was thicker. The additional dipole formed at high-k/high-k interfaces could be used to expound the mechanism. This work proposed an effective solution to reduce resistance contacts for InP based transistors and Schottky barrier transistors.

36 MATERIALS SCIENCE↗

Shock-induced twinning/detwinning and spall failure in Cu–Ta nanolaminates at atomic scales

Here, this study provides new insights into the role of interfaces on the deformation and failure mechanisms in shock-loaded Cu–Ta–Cu trilayer system. The thickness of the Ta layer, piston velocities, and shock pulse durations were varied to explore the impact of impedance mismatch and loading conditions on spallation behavior and twin formation. It was found that the interfaces play a crucial role in the dynamic response of these multilayered systems since secondary reflection waves generated at the interfaces significantly affected the peak stress and pressure profiles, influencing void nucleation and failure modes. In the trilayer systems, failure predominantly occurred at interfaces and within the Ta layer, with void nucleation sites and twinning behavior being markedly different compared to single-crystal Cu and Ta. Increasing the Ta layer thickness modified the wave interactions, leading to different failure locations. Higher piston velocities were associated with increased spall strength by enhancing wave interactions and void formation, particularly at the interfaces and within the Ta layer, under specific configurations. Additionally, shorter shock pulse durations facilitated earlier initiation of the release fan, reducing twin formation and altering the failure dynamics by accelerating twin annihilation and pressure release.

36 MATERIALS SCIENCE↗

Engineered superlattices with crossover from decoupled to synthetic ferromagnetic behavior

The extent of interfacial charge transfer and the resulting impact on magnetic interactions were investigated as a function of sublayer thickness in La 0.7 Sr 0.3 MnO 3 /La 0.7 Sr 0.3 CoO 3 ferromagnetic superlattices. Element-specific soft x-ray magnetic spectroscopy reveals that the electronic structure is altered within 5–6 unit cells of the chemical interface, and can lead to a synthetic ferromagnet with strong magnetic coupling between the sublayers. The saturation magnetization and coercivity depends sensitively on the sublayer thickness due to the length scale of this interfacial effect. For larger sublayer thicknesses, the La 0.7 Sr 0.3 MnO 3 and La 0.7 Sr 0.3 CoO 3 sublayers are magnetically decoupled, displaying two independent magnetic transitions with little sublayer thickness dependence. Lastly, these results demonstrate how interfacial phenomena at perovskite oxide interfaces can be used to tailor their functional properties at the atomic scale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Solar wind observations by Lyman alpha

The interaction between the solar wind and the local interstellar matter takes place at two distinct regions. The plasma component of the interstellar matter meets the solar wind at the heliospheric interface region and it is excluded from entering into the heliosphere. The neutral component consisting mainly of the hydrogen atoms flows through the whole heliosphere. It gets, however, partly ionized by charge exchange collisions with solar wind protons and energetic photons from the Sun. The neutral atom trajectories are also affected by the radiation pressure from the Sun. While the properties of the interface region are still too sparsely known to be useful for solar wind studies the neutral H distribution near the Sun has been used successfully for this purpose. Measuring Lyman alpha light scattered by neutral hydrogen atoms can serve as a remote sensing measurement of the solar wind's three-dimensional and temporal distribution. In this work we will particularly focus on the solar cycle effects on the neutral hydrogen distribution and how it affects the solar wind monitoring.

Kyroelae, E.↗

Deformation Mechanisms of Vertically Stacked WS 2 /MoS 2 Heterostructures: The Role of Interfaces

Here, the mechanical and optical properties generated due to the stacking of different atomically thin materials have made it possible to tune and engineer these materials for next-generation electronics. The understanding of the interlayer interactions in such stacked structures is of fundamental interest for structure and property correlation. Here, a combined approach of in situ Raman spectroscopy and mechanical straining along with molecular dynamics (MD) simulations has been used to probe one such interface, namely, the WS 2 /MoS 2 heterostructure. Vertical heterostructures on poly(methyl methacrylate), when flexed, showed signs of decoupling at 1.2% strain. Theoretical calculations showed strain-induced stacking changes at 1.75% strain. The sliding characteristics of layers were also investigated using scanning probe microscopy based nanoscratch testing, and the results are further supported by MD simulations. The present study could be used to design future optoelectronic devices based on WS 2 /MoS 2 heterostructures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Precipitation of coherent Ni{sub 2}(Cr, W) superlattice in an Ni–Cr–W superalloy

It is demonstrated that a nanometer-sized Ni{sub 2}(Cr, W) superlattice with a Pt{sub 2}Mo-type structure can precipitate in an Ni–Cr–W alloy by means of a simple aging treatment at 550 °C. The dark-field image of short-range order domains has been found for the first time experimentally. The mechanism of short-range order to long-range order transformation has been revealed based on transmission electron microscopy result and static concentration waves theory and found to be continuous ordering. The randomness of the transformation of static concentration waves leads to equiprobable occurrence of the different variants. The transformation of short-range order to long-range order gives rise to the Pt{sub 2}Mo-type Ni{sub 2}(Cr, W) superlattice. The interfaces between Ni{sub 2}(Cr, W) and Ni-based matrix and the different variants of Ni{sub 2}(Cr, W) have been investigated by high resolution transmission electron microscopy. The results reveal that the interfaces between Ni{sub 2}(Cr, W) and surrounding matrix are coherent at the atomic scale. - Highlights: • The DF image of SRO cluster has been found for the first time experimentally. • The transformation of SRO to LRO gives rise to the Pt{sub 2}Mo-type Ni{sub 2}(Cr, W). • Variants of Ni{sub 2}(Cr, W) occur equiprobably. • The interfaces between Ni{sub 2}(Cr, W) and matrix are coherent at the atomic scale.

36 MATERIALS SCIENCE↗

Formation of pyrophosphates across grain boundaries induces the formation of mismatched but oriented interfaces in silver phosphate polypods

The interfaces and their misfit defects determine the materials properties for a wide range of applications, such as electronic devices, photocatalysis, and mechanical engineering, etc. However, current understanding of atomic interfacial structures is limited. Here we discover a special interfacial structure, mismatched but oriented interface via two distinct facets. Transmission and scanning electron microscopy results suggest that, in Ag 3 PO 4 polypods structures, interfaces of {1 0 0} and {1 1 0}, ({1 0 0}/(1 1 0}), {1 0 0}/{1 1 1}, {1 1 0}/{1 1 1}, and {1 0 0}/{1 0 0}, etc., have a certain orientation relationship, corresponding to the energy minima and coincident site lattice of interfacial atoms as demonstrated by molecular dynamics simulations. Density functional theory demonstrates that the formation of pyrophosphate and/or phosphates rotation to bond across the interface compensate the lattice mismatch at the interfaces, as well as deformations of Ag-O bonds. Furthermore, our work opens up a new avenue for a much wider range of interfacial structures, allow for a higher diversity of structures, and shine light on tailoring crystal structures, morphologies, and the resulting properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effect of grain size on the melting point of confined thin aluminum films

The melting of aluminum thin film was studied by a molecular dynamics (MD) simulation technique. The effect of the grain size and type of confinement was investigated for aluminum film with a constant thickness of 4 nm. The results show that coherent intercrystalline interface suppress the transition of solid aluminum into liquid, while free-surface gives melting point depression. The mechanism of melting of polycrystalline aluminum thin film was investigated. It was found that melting starts at grain boundaries and propagates to grain interiors. The melting point was calculated from the Lindemann index criterion, taking into account only atoms near to grain boundaries. This made it possible to extend melting point calculations to bigger grains, which require a long time (in the MD scale) to be fully molten. The results show that 4 nm thick film of aluminum melts at a temperature lower than the melting point of bulk aluminum (933 K) only when the grain size is reduced to 6 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces

Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C{sub max} hypothesized to be a result of poor nucleation of HfO{sub 2} on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D{sub it} high C{sub ox} MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Realization of highly crystallographic three-dimensional nanosheets by a stress-induced oriented-diffusion method

Morphologically controlled nanostructures have been increasingly important because of their strongly shape dependent physical and chemical properties. Formation of nanoscale silicon based structures that employ high levels of strain, intentional, and unintentional twins or grain boundaries can be dramatically different from the commonly conceived bulk processes. We report, realization of highly crystallographic 3D nanosheets with unique morphology and ultra-thin thickness by a stress-induced oriented-diffusion method, based on plasma processing of metal layer deposited on Si substrate and its post deep reactive ion etching. Annealing in plasma ambient creates rod-like metal alloy precursors which induce stress at its interface with Si substrate due to the mismatch of lattice constants. This stress opens facilitated gateways for orientated-diffusion of metal atoms in 〈110〉 directions and leads to formation of NSs (nanosheets) with [111] crystalline essence. Nanosheets are mainly triangular, hexagonal, or pseudo hexagonal in shape and their thicknesses are well controlled from several to tens of nanometers. The structural and morphological evolution of features were investigated in detail using transmission electron microscope, atomic force microscope, scanning electron microscope and possible mechanism is proposed to explain the formation of the thermodynamically unfavorable morphology of nanosheets. Significant photoemission capability of NSs was also demonstrated by photoluminescence spectroscopy.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Pt Nanoparticle Disintegration at Oxide Interfaces Enhances CO Oxidation Catalysis

Understanding how supported metal nanoparticles dynamically evolve under reaction conditions is critical for controlling their catalytic function. Here, the mechanism behind the dynamic disintegration of Pt nanoparticles (NPs) supported on CeOx-TiO2 (CT) during CO oxidation is elucidated, leading to the formation of single atoms (SAs) and/or sub-nanometer clusters. Density functional theory (DFT) calculations reveal that strong Pt-CO interactions weaken Pt─Pt cohesion, while electronic coupling between Pt and Ce ions stabilizes Pt-CO* intermediates at the oxide interface. Surface oxygen vacancies kinetically trap Pt-CO*, but the vacancies are replenished under oxygen-rich conditions, enabling Pt-CO* surface diffusion and subsequent structural reorganization. In situ spectroscopic analyses confirm the oxygen-driven transformation of Pt NPs, correlating with a threefold increase in mass-specific activity at 150 °C. These findings demonstrate that interfacial oxygen dynamics and metal-support interactions can be leveraged to induce nanoparticle disintegration and optimize catalytic performance, highlighting the catalytic potential of interface-engineered Pt nanostructures.

CO oxidation↗